© 2002 IXYS CORPORATION, All Rights Reserved DS98855A(9/02)
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated
Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
Features
zRF capable Mosfets
zRugged polysilicon gate cell structure
zDouble metal process for low gate
resistance
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
zFast intrinsic rectifier
Applications
zDC-DC converters
zSwitched-mode and resonant-mode
power supplies, >500kHz switching
zDC choppers
zPulse generation
zLaser drivers
Advantages
zPLUS 247TM package for clip or spring
mounting
zSpace savings
zHigh power density
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C55A
IDM TC= 25°C, Pulse Width Limited by TJM 220 A
IAR TC= 25°C55A
EAS TC= 25°C3J
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 10 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 560 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
G = Gate D = Drain
S = Source TAB = Drain
PLUS247 (IXFX)
TO-264 (IXFK)
S
G
D(TAB)
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 500 V
VGS(th) VDS = VGS, ID = 8mA 3.0 5.5 V
IGSS VGS = ± 20V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 100 μA
VGS= 0V TJ = 125°C 3 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 85 mΩ
VDSS = 500V
ID25 = 55A
RDS(on) ≤≤
≤≤
≤ 85mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 250ns
IXFK55N50F
IXFX55N50F
Advance Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK55N50F
IXFX55N50F
Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
2. See IXFN55N50F Datasheet for Characteristic Curves
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 22 33 S
Ciss 6700 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1250 pF
Crss 330 pF
td(on) 24 ns
tr 20 ns
td(off) 45 ns
tf9.6 ns
Qg(on) 195 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 50 nC
Qgd 95 nC
RthJC 0.21 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 55 A
ISM Repetitive, Pulse Width Limited by TJM 220 A
VSD IF = 25A, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 1 μC
IRM 10 A
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
TO-264 (IXFK) Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXFX) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
© 2002 IXYS CORPORATION, All Rights Reserved
IXFK 55N50F
IXFX 55N50F
VGS - Vo lts
3.5 4.0 4.5 5.0 5.5 6.0 6.5
ID - Amperes
0
5
10
15
20
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
ID - Amperes
0
5
10
15
20
25
30
35
40
45
50
55
60
TJ - Degrees C
-25 0 25 50 75 100 125 150
RDS(ON) - Normalized
0
1
2
3
ID - Amp eres
0 1020304050
RDS(ON) - Normalized
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS - Vo lts
0 6 12 18
ID - Amperes
0
20
40
60
80
100
VDS - Vo lts
024681012
ID - Amperes
0
20
40
60
80
100
120
140
5V
VGS = 10V
TJ = 125OC
TJ = 25OC
6V 5V
TJ = 25oC
TJ = 25OC
TJ = 150OC
6V
VGS = 10V
9V
8V
VGS = 10V
9V
8V
TJ = 125oC
TJ = -40oC
ID = 55A
ID = 27.5A
VGS = 10V
7V
7V
Fig. 1. Output Characteristics at 25oCFig. 2. Output Characteristics at 125oC
Fig. 3. RDS(ON) vs. Drain Current Fig. 4. RDS(ON) vs. TJ
Fig. 5. Drain Current vs. Case Temperature Fig. 6. Admittance Curves
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK55N50F
IXFX55N50F
Pulse Width - Seconds
10-4 10-3 10-2 10-1 100101
ZthJC - (K/W)
0.001
0.01
0.1
1
VDS - Vo lts
0 5 10 15 20 25 30
Capacitance - pF
250
500
1000
2500
5000
10000
G ate C h arg e - n C
0 50 100 150 200 250 300
VGS - Volts
0
5
10
15
Crss
Coss
Ciss
VDS = 250V
ID = 27.5A
f = 1MHz
VSD - V o l ts
0.2 0.4 0.6 0.8 1.0
ID - Amperes
0
5
10
15
20
25
TJ = 125OCTJ = 25OC
Single Pulse
Fig. 7. Gate Charge Characteristic Curve Fig. 8. Capacitance Curves
Fig. 9. Source Current vs. Source to Drain Voltage
Fig. 10. Thermal Impedance
