CXDM4060N
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXDM4060N is a
high current silicon N-Channel enhancement-mode
MOSFET, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers high current,
low rDS(ON), low threshold voltage, and low leakage
current.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Steady State) ID 6.0 A
Maximum Pulsed Drain Current, tp=10μs IDM 20 A
Power Dissipation PD 1.2 W
Operating and Storage Junction Temperature TJ, Tstg -55 to +150 °C
Thermal Resistance ΘJA 104 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IGSSF, IGSSR V
GS=20V, VDS=0 100 nA
IDSS V
DS=32V, VGS=0 1.0 μA
BVDSS V
GS=0, ID=250μA 40 V
VGS(th) VGS=VDS, ID=250μA 1.0 1.7 3.0 V
VSD VGS=0, IS=1.0A 1.0 V
rDS(ON) V
GS=10V, ID=6.0A 20 31 mΩ
rDS(ON) V
GS=4.5V, ID=5.0A 30 45 mΩ
Qg(tot) VDS=20V, VGS=10V, ID=6.0A 12 nC
Qgs VDS=20V, VGS=10V, ID=6.0A 2.0 nC
Qgd VDS=20V, VGS=10V, ID=6.0A 2.2 nC
Crss V
DS=20V, VGS=0, f=1.0MHz 64 pF
Ciss V
DS=20V, VGS=0, f=1.0MHz 730 pF
Coss VDS=20V, VGS=0, f=1.0MHz 58 pF
ton VDS=20V, VGS=10V, ID=1.0A 27 ns
toff R
G=3.0Ω, RL=3.3Ω 33 ns
FEATURES:
• Low rDS(ON) (20mΩ TYP @ VGS=10V)
• High current (ID=6.0A)
• Logic level compatibility
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
SOT-89 CASE
R2 (1-April 2013)
www.centralsemi.com
CXDM4060N
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
LEAD CODE:
1) Gate
2) Drain
3) Source
MARKING: FULL PART NUMBER
SOT-89 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
www.centralsemi.com
R2 (1-April 2013)
CXDM4060N
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R2 (1-April 2013)
www.centralsemi.com
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(001)
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