APT6017JLL 600V POWER MOS 7 R MOSFET ID 27 2 T- D SO "UL Recognized" ISOTOP (R) D * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package MAXIMUM RATINGS VDSS S G (R) Symbol 0.170 S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg 31A G S All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APT6017JLL UNIT 600 Volts 31 Continuous Drain Current @ TC = 25C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 375 Watts Linear Derating Factor 3.0 W/C PD TJ,TSTG 1 124 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 C 300 Amps 31 (Repetitive and Non-Repetitive) 1 35 4 mJ 1600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 15.5A) TYP MAX Volts 0.170 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) 500 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Ohms A 100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 9-2004 Characteristic / Test Conditions 050-7096 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT6017JLL Characteristic Ciss Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr 3 RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 31A @ 25C Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25C 6 ns 375 VDD = 400V, VGS = 15V 310 ID = 31A, RG = 5 INDUCTIVE SWITCHING @ 125C 6 nC 7 RG = 0.6 Eon UNIT pF 60 100 25 55 11 6 26 VDD = 300V Fall Time MAX 4500 830 ID = 31A @ 25C Turn-off Delay Time tf TYP VGS = 10V Rise Time td(off) MIN J 635 VDD = 400V, VGS = 15V ID = 31A, RG = 5 365 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 31 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -31A, dl S/dt = 100A/s) 600 ns Q rr Reverse Recovery Charge (IS = -31A, dl S/dt = 100A/s) 13.0 C dv/ Peak Diode Recovery dt dv/ 124 (Body Diode) 1.3 (VGS = 0V, IS = -31A) dt Amps Volts 8 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP 0.33 RJC Junction to Case RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25C, L = 3.33mH, RG = 25, Peak IL = 31A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID31A di/dt 700A/s VR 600V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.25 0.7 0.20 0.5 0.15 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7096 Rev B 9-2004 0.35 0.30 0.3 0.10 t1 t2 0.05 0 0.1 0.05 10-5 Duty Factor D = t1/t2 SINGLE PULSE 10-4 10-3 C/W Peak TJ = PDM x ZJC + TC 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 0.0988 0.0196F 0.230 0.381F Power (watts) ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. (C) Case temperature. (C) 100 80 60 40 TJ = +125C 20 TJ = +25C TJ = -55C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 60 7V 40 6.5V 20 6V 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 D 1.20 VGS=10V 1.10 VGS=20V 1.00 0.90 0.80 0 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 = 15.5A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 D -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) I V NORMALIZED TO = 10V @ I = 15.5A GS 1.30 1.15 35 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 7.5V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 9-2004 0 80 050-7096 Rev B ID, DRAIN CURRENT (AMPERES) 120 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 8V VGS =15 &10V 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160 140 APT6017JLL 100 10,000 Ciss 50 100S 10 1mS TC =+25C TJ =+150C SINGLE PULSE 1 I D = 31A 12 VDS= 120V VDS= 300V 8 VDS= 480V 4 0 0 Coss 100 Crss 10 20 40 60 80 100 120 140 160 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 IDR, REVERSE DRAIN CURRENT (AMPERES) 16 1,000 10mS 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) APT6017JLL 20,000 OPERATION HERE LIMITED BY RDS (ON) C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 124 100 TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 80 80 td(off) 70 V DD R 70 G = 400V = 5 T = 125C J DD R G = 400V = 5 tr and tf (ns) td(on) and td(off) (ns) V 50 T = 125C J 40 L = 100H 30 td(on) 10 0 1400 10 DD R G 10 V 1600 L = 100H E ON includes diode reverse recovery 800 Eoff 600 0 20 1800 = 400V = 5 Eon 400 200 SWITCHING ENERGY (J) Eon and Eoff (J) tr 30 40 50 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT T = 125C 1000 9-2004 30 0 20 J 050-7096 Rev B tf 40 10 30 40 50 60 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V 1200 0 50 20 20 0 L = 100H 60 60 I DD D = 400V = 31A Eoff T = 125C J 1400 L = 100H E ON includes 1200 diode reverse recovery 1000 800 Eon 600 400 200 0 10 20 30 40 50 60 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT6017JLL 90% 10% TJ125C Gate Voltage Gate Voltage T 125C J td(off) td(on) Drain Voltage 90% tr Drain Current tf 90% 10% 5% 5% 0 Drain Voltage 10% Drain Current Switching Energy Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 9-2004 r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7096 Rev B 7.8 (.307) 8.2 (.322)