2008. 3. 10 1/2
SEMICONDUCTOR
TECHNICAL DATA
MMBTA44
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH VOLTAGE APPLICATION.
FEATURES
·High Breakdown Voltage.
·Collector Power Dissipation : PC=350mW.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q Max 0.1.
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
ELECTRICAL CHARACTERISTICS (Ta=25℃)
*Pulse Test : Pulse Width≦300μS, Duty Cycle≦2.0%
CHARACTERISTIC SYMBOL RATING UNIT
Collector-BaseVoltage VCBO 450 V
Collector-EmitterVoltage VCEO 400 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC300 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=100μA, IE=0 450 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 400 - - V
Collector-Emitter Breakdown Voltage (2) V(BR)CES IC=100μA, IB=0 450 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0 6.0 - - V
Collector Cut off Current ICBO VCB=400V, IE=0 - - 100 nA
Collector Cut off Current ICES VCE=400V, IB=0 - - 500 nA
Emitter Cutoff Current IEBO VEB=4V, IC=0 - - 100 nA
DC Current Gain * hFE
VCE=10V, IC=1mA 40 - -
VCE=10V, IC=10mA 50 - 200
VCE=10V, IC=50mA 45 - -
VCE=10V, IC=100mA 40 - -
Collector-Emitter Saturation Voltage *
VCE(sat) 1 IC=1mA, IB=0.1mA - - 0.4
V
VCE(sat) 2 IC=10mA, IB=1mA - - 0.5
VCE(sat) 3 IC=50mA, IB=5mA - - 0.75
Base-Emitter Saturation Voltage * VBE(sat) IC=10mA, IB=1mA - - 0.75 V
Transition Frequency fTVCE=10V, IC=10mA, f=10MHz 20 - - MHz
Collector Output Capacitance Cob VCB=20V, IE=0, f=1MHz - - 7 pF
Input Capacitance Cib VEB=0.5V, IC=0, f=1MHz - - 130 pF
* : Package Mounted On 99.5% Alumina 10×8×0.6mm.
Type Name
Marking
Lot No.
APX
2008. 3. 10 2/2
MMBTA44
Revision No : 2
