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Complementary Power Transistor
Description:
Designed for use in high-frequency drivers in audio amplier applications.
Features:
• Collector-Emitter sustaining voltage-
VCEO(sus) = 150V (Min.) - MJE15030, MJE15031
• DC current gain specied to 8A
hFE = 20 (Min.) at IC = 4A
• TO-220AB compact package
Maximum Ratings
Thermal Characteristics
Characteristic Symbol Max. Unit
Thermal Resistance Junction to Case Rθjc 2.5 °C/W
Characteristic Symbol Rating Unit
Collector-Emitter Voltage VCEO 150
VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5
Collector Current -Continuous
-Peak IC
8
16 A
Base Current IB2
Total Power Dissipation at TC = 25°C
Derate above 25°C PD
50
0.4
W
W/°C
Operating and Storage Junction
Temperature Range TJ, TSTG -65 to +150 °C
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Complementary Power Transistor
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min. Max. Unit
Off Characteristics
Collector-Emitter Sustaining Voltage
IC = 10mA, IB = 0 VCEO (sus) 150 - V
Collector Cut off Current
VCE = 150V, IB = 0 ICEO -0.1 mA
Collector Cut off Current
VCB = 150V, IE = 0 ICBO -
10 μA
Emitter Cut off Current
VEB = 5V, IC = 0 IEBO -
On Characteristics (1)
DC Current Gain
IC = 0.1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 3A, VCE = 2V
IC = 4A, VCE = 2V
hFE
40
40
40
20
- -
Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.1A VCE (sat) -0.5
V
Base-Emitter On Voltage
IC = 1A, VCE = 2V VBE (on) - 1
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
IC = 0.5A, VCE = 10V, f = 1MHz fT30 -MHz
Figure - 1 Power Derating
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤2%.
(2) fT = hFE • ftest.
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Complementary Power Transistor
Figure - 2 Active Region Safe Operating Area
IC, Collector Current (Amp)
VCE, Collector Emitter Voltage (Volts)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown safe operating area curves indicate IC-VCE limits
of the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate.
The data of Figure - 2 and Figure - 3 is based on TJ(PK) = 150°C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(PK)
≤150°C. At high case temperatures, thermal limitation will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
IC, Collector Current (Amp)
VCE, Collector Emitter Voltage (Volts)
Figure - 3 Reverse Bias Safe Operating Area Figure - 4 Capacitances
C, Capacitance (pF)
VR, Reverse Voltage (Volts)
f, Frequency (kHz)
hFE, Small Signal Current Gain
Figure - 5 Small Signal Current Gain
IC, Collector Current (AMP)
fT, Transition Frequency (MHz)
Figure - 6 Current Gain-Bandwidth Product
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Complementary Power Transistor
Figure - 7 DC Current Gain
Figure - 8 “ON” Voltage
NPN MJE15030
IC, Collector Current (AMP)
hFE, DC Current Gain
NPN MJE15030
IC, Collector Current (AMP)
hFE, DC Current Gain
NPN MJE15030 PNP MJE15031
IC, Collector Current (AMP)
V, Voltage (Volts)
IC, Collector Current (AMP)
V, Voltage (Volts)
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Complementary Power Transistor
IC, Collector Current (AMP)
t, Time (µs)
Figure - 9 Turn-On Time
IC, Collector Current (AMP)
t, Time (µs)
Figure - 10 Turn-Off Time
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Complementary Power Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, NPN, TO-220 MJE15030
Transistor, PNP, TO-220 MJE15031
Pin Conguration:
1. Base
2. Collector
3. Emitter
4. Collector(Case)
Dimensions Min. Max.
A 14.68 15.31
B 9.78 10.42
C5.01 6.52
D13.06 14.62
E 3.57 4.07
F2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.2 2.97
L 0.33 0.55
M 2.48 2.98
O 3.7 3.9
Dimensions : Millimetres