BAS56 . DUAL HIGH CURRENT SWITCHING DIODE SOT-143 CASE MAXIMUM RATINGS (T,=25C) SYMBOL Continuous Reverse Voltage VR 60 Peak Repetitive Reverse Voltage VRRM 60 Continuous Forward Current IF 200 Peak Repetitive Forward Current lFRM 600 Forward Surge Current, tp=1 psec. lFSM 4000 Forward Surge Current, tp=1 sec. IFSM 1000 Power Dissipation Pp 350 Operating and Storage Junction Temperature TysT stg. -65 to +150 Thermal Resistance OJA 357 ELECTRICAL CHARACTERISTICS (T,=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=60V 100 IR VR=60V, Ta=150C 100 IR VpR=75V 10 VE IF=10mA 0.75 VE lp=200mA 1.00 Ve |-=500mA 1.25 Cr VR=0, f=1 MHz 2.5 | ter IF=lR=400mA, Ry, =100Q, Rec. to 40mA 6.0 Qs IF=10mA, Vp_=5.0V, R_=5002 50 VER l-=400mA, t,=30ns 1.2 VER IF=400mA, t-=100ns 1.5 88 Central . DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high current, high speed switching applications. Marking code is L51. UNITS mA mA mA mA mW C OCW UNITS nA uA pA pF ns pc All dimensions in inches (mm). -004(0.10) -005(0.13) .110(2.79) ~118(3.00) .079(2.01) -098( MAX 2.49) i MUM _l. > 4 3 .047(1.19) .054(1.30) .003(0.08} -005(0.13) -043(1.09) LEAD CODE: 1) CATHODE 1 2) CATHODE 2 3) ANODE 2 4) ANODE 1 89 .030(0.76) .037(0.94) .033(0.84) ri | .014(0.36) | 1.018(0.46) | 2 aan .071(1.80) DATA SHEET R2