VCC
LEN
IN
GND
CB
HG
SW
LG
U1
LM27222 1
2
3
4
5
6
7
8
(to controller)
(to controller)
R1
VCC
4V to 6.85V
D1 C2
0.33 PF
C1 Q1
Q2
C3
L1
VIN
VOUT
+
C4 +
up to 30V
0.5V to
Vin - 0.5V
LM27222
www.ti.com
SNVS306B –SEPTEMBER 2004–REVISED MARCH 2013
LM27222 High-Speed 4.5A Synchronous MOSFET Driver
Check for Samples: LM27222
1FEATURES DESCRIPTION
The LM27222 is a dual N-channel MOSFET driver
2• Adaptive Shoot-through Protection designed to drive MOSFETs in push-pull
• 10ns Dead Time configurations as typically used in synchronous buck
• 8ns Propagation Delay regulators. The LM27222 takes the PWM output from
a controller and provides the proper timing and drive
• 30ns Minimum On-time levels to the power stage MOSFETs. Adaptive shoot-
• 0.4ΩPull-down and 0.9ΩPull-up Drivers through protection prevents damaging and efficiency
• 4.5A Peak Driving Current reducing shoot-through currents, thus ensuring a
robust design capable of being used with nearly any
• MOSFET Tolerant Design MOSFET. The adaptive shoot-through protection
• 5µA Quiescent Current circuitry also reduces the dead time down to as low
• 30V Maximum Input Voltage in Buck as 10ns, ensuring the highest operating efficiency.
Configuration The peak sourcing and sinking current for each driver
of the LM27222 is about 3A and 4.5Amps
• 4V to 6.85V Operating Voltage respectively with a Vgs of 5V. System performance is
• SOIC-8 and WSON Packages also enhanced by keeping propagation delays down
to 8ns. Efficiency is once again improved at all load
APPLICATIONS currents by supporting synchronous, non-
synchronous, and diode emulation modes through the
• High Current Buck And Boost Voltage LEN pin. The minimum output pulse width realized at
Converters the output of the MOSFETs is as low as 30ns. This
• Fast Transient DC/DC Power Supplies enables high operating frequencies at very high
• Single Ended Forward Output Rectification conversion ratios in buck regulator designs. To
support low power states in notebook systems, the
• CPU And GPU Core Voltage Regulators LM27222 draws only 5µA from the 5V rail when the
IN and LEN inputs are low or floating.
Typical Application
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2004–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
IN
LEN
Shoot-through
Protection
VCC
LG
GND
Logic
CB
HG
SW
+
-
150k
150k
Level
Shifter
10k
10k
HG
CB
IN
LG
VCC
LEN
GND
SW 1
2
3
4
8
7
6
5
LM27222
SNVS306B –SEPTEMBER 2004–REVISED MARCH 2013
www.ti.com
Connection Diagram
Figure 1. Top View
SOIC-8 (Package # D0008A) θJA = 172°C/W
or
WSON-8 (Package # NGT0008A) θJA = 39°C/W
PIN DESCRIPTIONS
Pin # Pin Name Pin Function
1 SW High-side driver return. Should be connected to the common node of high and low-side MOSFETs.
2 HG High-side gate drive output. Should be connected to the high-side MOSFET gate. Pulled down internally to
SW with a 10K resistor to prevent spurious turn on of the high-side MOSFET when the driver is off.
3 CB Bootstrap. Accepts a bootstrap voltage for powering the high-side driver.
4 IN Accepts a PWM signal from a controller. Active High. Pulled down internally to GND with a 150K resistor to
prevent spurious turn on of the high-side MOSFET when the controller is inactive.
5 LEN Low-side gate enable. Active High. Pulled down internally to GND with a 150K resistor to prevent spurious
turn-on of the low-side MOSFET when the controller is inactive.
6 VCC Connect to +5V supply.
7 LG Low-side gate drive output. Should be connected to low-side MOSFET gate. Pulled down internally to GND
with a 10K resistor to prevent spurious turn on of the low-side MOSFET when the driver is off.
8 GND Ground.
Block Diagram
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated
Product Folder Links: LM27222
LM27222
www.ti.com
SNVS306B –SEPTEMBER 2004–REVISED MARCH 2013
Absolute Maximum Ratings (1)
VCC to GND -0.3V to 7V
CB to GND -0.3V to 36V
CB to SW -0.3V to 7V
SW to GND (2) -2V to 36V
LEN, IN, LG to GND -0.3V to VCC + 0.3V ≤7V
HG to GND -0.3V to 36V
Junction Temperature +150°C
Power Dissipation (3) 720mW
Storage Temperature −65° to 150°C
ESD Susceptibility
Human Body Model 2kV
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating ratings are conditions under which
the device operates correctly. Operating Ratings do not imply ensured performance limits.
(2) The SW pin can have -2V to -0.5 volts applied for a maximum duty cycle of 10% with a maximum period of 1 second. There is no duty
cycle or maximum period limitation for a SW pin voltage range of -0.5V to 30 Volts.
(3) Maximum allowable power dissipation is a function of the maximum junction temperature, TJMAX, the junction-to-ambient thermal
resistance, θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated
using: PMAX = (TJMAX-TA) / θJA. The junction-to-ambient thermal resistance, θJA, for the LM27222M, it is 165°C/W. For a TJMAX of 150°C
and TAof 25°C, the maximum allowable power dissipation is 0.76W. The θJA for the LM27222SD is 42°C/W. For a TJMAX of 150°C and
TA of 25°C, the maximum allowable power dissipation is 3W.
Operating Ratings (1)
VCC 4V to 6.85V
Junction Temperature Range −40° to 125°C
CB (max) 33V
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating ratings are conditions under which
the device operates correctly. Operating Ratings do not imply ensured performance limits.
Copyright © 2004–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: LM27222
LM27222
SNVS306B –SEPTEMBER 2004–REVISED MARCH 2013
www.ti.com
Electrical Characteristics (1)
VCC = CB = 5V, SW = GND = 0V, unless otherwise specified. Typicals and limits appearing in plain type apply for TA= TJ=
+25°C. Limits appearing in boldface type apply over the entire operating temperature range (-40°C ≤TJ≤125°C).
Symbol Parameter Conditions Min Typ Max Units
POWER SUPPLY
Iq_op Operating Quiescent Current IN = 0V, LEN = 0V 5 15 µA
30
IN = 0V, LEN = 5V 500 540 650 µA
825
HIGH-SIDE DRIVER
Peak Pull-up Current 3 A
RH-pu Pull-up Rds_on ICB = IHG = 0.3A 0.9 2.5 Ω
Peak Pull-down Current 4.5 A
RH-pd Pull-down Rds_on ISW = IHG = 0.3A 0.4 1.5 Ω
t4Rise Time Timing Diagram, CLOAD = 3.3nF 17 ns
t6Fall Time Timing Diagram, CLOAD = 3.3nF 12 ns
t3Pull-up Dead Time Timing Diagram 9.5 ns
t5Pull-down Delay Timing Diagram 16.5 ns
ton_min Minimum Positive Output 30 ns
Pulse Width
LOW-SIDE DRIVER
Peak Pull-up Current 3.2 A
RL-pu Pull-up Rds_on IVCC = ILG = 0.3A 0.9 2.5 Ω
Peak Pull-down Current 4.5 A
RL-pd Pull-down Rds_on IGND = ILG = 0.3A 0.4 1.5 Ω
t8Rise Time Timing Diagram, CLOAD = 3.3nF 17 ns
t2Fall Time Timing Diagram, CLOAD = 3.3nF 14 ns
t7Pull-up Dead Time Timing Diagram 11.5 ns
t1Pull-down Delay Timing Diagram 7.7 ns
PULL-DOWN RESISTANCES
HG-SW Pull-down Resistance 10k Ω
LG-GND Pull-down 10k Ω
Resistance
LEN-GND Pull-down 150K Ω
Resistance
IN-GND Pull-down Resistance 150K Ω
LEAKAGE CURRENTS
Ileak_IN IN pin Leakage Current IN = 0V, Source Current 50 nA
IN = 5V, Sink Current 33 µA
Ileak_LEN LEN pin Leakage Current LEN = 0V, Source Current 200 nA
LEN = 5V, Sink Current 33 µA
LOGIC
VIH_LEN LEN Low to High Threshold Low to High Transition 65 % of VCC
VIL_LEN LEN High to Low Threshold High to Low Transition 30 % of VCC
VIH_IN IN Low to High Threshold Low to High Transition 65 % of VCC
VIL_IN IN High to Low Threshold High to Low Transition 30 % of VCC
Threshold Hysteresis 0.7 V
(1) Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
4Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated
Product Folder Links: LM27222
IN
LEN
HG
LG
400 ns/DIV
IN
HG-SW
LG
40 ns/DIV
IN
HG-SW
LG
40 ns/DIV
IN
LG
HG-SW
0.9V
0.9V
t2
t4
t3
t1t5t7t8
t6
LM27222
www.ti.com
SNVS306B –SEPTEMBER 2004–REVISED MARCH 2013
Timing Diagram
Typical Waveforms
Figure 2. PWM Low-to-High Transition at IN Input Figure 3. PWM High-to-Low Transition at IN Input
Figure 4. LEN Operation
The typical waveforms are from a circuit similar to Typical Application with:
Q1: 2 x Si7390DP
Q2: 2 x Si7356DP
L1: 0.4 µH
VIN: 12V
Copyright © 2004–2013, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: LM27222
20 40 60 80 100 120 140
tON (ns)
0
20
40
60
80
100
120
tON_SW (ns)
20 ns/DIV
IN
HG-SW
LM27222
SNVS306B –SEPTEMBER 2004–REVISED MARCH 2013
www.ti.com
APPLICATION INFORMATION
GENERAL
The LM27222 is designed for high speed and high operating reliability. The driver can handle very narrow, down
to zero, PWM pulses in a specified, deterministic way. Therefore, the HG and LG outputs are always in
predictable states. No latches are used in the HG and LG control logic so the drivers cannot get "stuck" in the
wrong state. The driver design allows for powering up with a pre-biasing voltage being present at the regulator
output. To reduce conduction losses in DC-DC converters with low duty factors the LM27222 driver can be
powered from a 6.5V ±5% power rail.
It is recommended to use the same power rail for both the controller and driver. If two different power rails are
used, never allow the PWM pulse magnitude at the IN input or the control voltage at the LEN input to be above
the driver VCC voltage or unpredictable HG and LG outputs pulse widths may result.
MINIMUM PULSE WIDTH
As the input pulse width to the IN pin is decreased, the pulse width of the high-side gate drive (HG-SW) also
decreases. However, for input pulse widths 60ns and smaller, the HG-SW remains constant at 30ns. Thus the
minimum pulse width of the driver output is 30ns. Figure 5 shows an input pulse at the IN pin 20ns wide, and the
output of the driver, as measured between the nodes HG and SW is a 30ns wide pulse. Figure 6 shows the
variation of the SW node pulse width vs IN pulse width. At the IN pin, if a falling edge is followed by a rising edge
within 5ns, the HG may ignore the rising edge and remain low until the IN pin toggles again. If a rising edge is
followed by a falling edge within 5ns, the pulse may be completely ignored.
Figure 5. Min On Time Figure 6.
ADAPTIVE SHOOT-THROUGH PROTECTION
The LM27222 prevents shoot-through power loss by ensuring that both the high- and low-side MOSFETs are not
conducting at the same time. When the IN signal rises, LG is first pulled down. The adaptive shoot-through
protection circuit waits for LG to reach 0.9V before turning on HG. Similarly, when IN goes low, HG is pulled
down first, and the circuit turns LG on only after the voltage difference between the high-side gate and the switch
node, i.e., HG-SW, has fallen to 0.9V.
It is possible in some applications that at power-up the driver's SW pin is above 3V in either buck or boost
comverter applications. For instance, in a buck configuration a pre-biasing voltage can be either a voltage from
anothert power rail connected to the load, or a leakage voltage through the load, or it can be an output capacitor
pre-charged above 3V while no significant load is present. In a boost application it can be an input voltage rail
above 3V.
6Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated
Product Folder Links: LM27222
P = QG-H
fSW x VCC
2
RH-pu
RH-pu + RG-H +RH-pd
RH-pd + RG-H
+QG-L RL-pu
RL-pu + RG-L
RL-pd
RL-pd + RG-L
+
^
^
LM27222
www.ti.com
SNVS306B –SEPTEMBER 2004–REVISED MARCH 2013
In the case of insufficient initial CB-SW voltage (less than 2V) such as when the output rail is pre-biased, the
shoot-through protection circuit holds LG low for about 170ns, beginning from the instant when IN goes high.
After the 170ns delay, the status of LG is dictated by LEN and IN. Once LG goes high and SW goes low, the
bootstrap capacitor will be charged up (assuming SW is grounded for long enough time). As a result, CB-SW will
be close to 5V and the LM27222 will now fully support synchronous operation.
The dead-time between the high- and low-side pulses is kept as small as possible to minimize conduction
through the body diode of the low-side MOSFET(s).
POWER DISSIPATION
The power dissipated in the driver IC when switching synchronously can be calculated as follows:
where
• where fSW = switching frequency
• VCC = voltage at the VCC pin
• QG_H = total gate charge of the (parallel combination of the) high-side MOSFET(s)
• QG_L = total gate charge of the (parallel combination of the) low-side MOSFET(s)
• RG_H = gate resistance of the (parallel combination of the) high-side MOSFET(s)
• RG_L = gate resistance of the (parallel combination of the) low-side MOSFET(S)
• RH_pu = pull-up RDS_ON of the high-side driver
• RH_pd = pull-down RDS_ON of the high-side driver
• RL_pu = pull-up RDS_ON of the low-side driver
• RL_pd = pull-down RDS_ON of the low-side driver (1)
PC BOARD LAYOUT GUIDELINES
1. Place the driver as close to the MOSFETs as possible.
2. HG, SW, LG, GND: Run short, thick traces between the driver and the MOSFETs. To minimize parasitics,
the traces for HG and SW should run parallel and close to each other. The same is true for LG and GND.
3. Driver VCC: Place the decoupling capacitor close to the VCC and GND pins.
4. The high-current loop between the high-side and low-side MOSFETs and the input capacitors should be as
small as possible.
5. There should be enough copper area near the MOSFETs and the inductor for heat dissipation. Vias may
also be added to carry the heat to other layers.
Copyright © 2004–2013, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Links: LM27222
GND
OUT1
CMP1
CMPREF
CMP2
VREF
VDD
LM27212
U1
Q1
Q2
L1 R8
Q3
Q4
L2 R9
D1
C4
D2
C5
+C6
+C7
R5
R4
VCC5VIN
U2
LM27222
U3
LM27222
C3
C2
R6
R7
SYNC1
SYNC2
OUT2
C1
R1
R2 R3
VCC
LEN
IN
GND
CB
HG
SW
LG
VCC
LEN
IN
GND
CB
HG
SW
LG
10:
0.1 PF
1.5:
1.5:
121:
121:
60.4:
60.4:
1 PF,
6.3V
1 PF,
6.3V 0.33 PF
**
0.6 PH
30A 1 m:
270 PF x 3
ESR = 9 m:
/cap
VOUT
VIN
*
0.6 PH
30A
*
**
0.33 PF
10 PF x 6
1 m:
LM27222
SNVS306B –SEPTEMBER 2004–REVISED MARCH 2013
www.ti.com
TYPICAL APPLICATION CIRCUIT DESCRIPITON
The Application Example on the following page shows the LM27222 being used with the LM27212, a 2-phase
hysteretic current mode controller. Although this circuit is capable of operating from 5V to 28V, the components
are optimized for an input voltage range of 9V to 28V. The high-side FET is selected for low gate charge to
reduce switching losses. For low duty cycles, the average current through the high-side FET is relatively small
and thus we trade off higher conduction losses for lower switching losses. The low-side FET is selected solely on
RDS_ON to minimize conduction losses. If the input voltage range were 4V to 6V, the MOSFET selection should
be changed. First, much lower voltage FETs can be used, and secondly, high-side FET RDS_ON becomes a larger
loss factor than the switching losses. Of course with a lower input voltage, the input capacitor voltage rating can
be reduced and the inductor value can be reduced as well. For a 4V to 6V application, the inductor can be
reduced to 200nH to 300nH. The switching frequency of the LM27212 is determined by the allowed ripple current
in the inductor. This circuit is set for approximately 300kHz. At lower input voltages, higher frequencies are
possible without suffering a significant efficiency loss. Although the LM27222 can support operating frequencies
up to 2MHz in many applications, the LM27212 should be limited to about 1MHz. The control architecture of the
LM27212 and the low propagation times of the LM27222 potentially gives this solution the fastest transient
response in the industry.
Application Example
* Q1, Q3: 2 x Si7390DP
** Q2, Q4: 2 x Si7356DP
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Product Folder Links: LM27222
LM27222
www.ti.com
SNVS306B –SEPTEMBER 2004–REVISED MARCH 2013
REVISION HISTORY
Changes from Revision A (March 2013) to Revision B Page
• Changed layout of National Data Sheet to TI format ............................................................................................................ 8
Copyright © 2004–2013, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Links: LM27222
PACKAGE OPTION ADDENDUM
www.ti.com 6-Feb-2020
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM27222M NRND SOIC D 8 95 TBD Call TI Call TI -40 to 125 27222
M
LM27222M/NOPB ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 27222
M
LM27222MX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 27222
M
LM27222SD/NOPB ACTIVE WSON NGT 8 1000 Green (RoHS
& no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 L27222S
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
PACKAGE OPTION ADDENDUM
www.ti.com 6-Feb-2020
Addendum-Page 2
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LM27222MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM27222SD/NOPB WSON NGT 8 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 2-Sep-2015
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM27222MX/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM27222SD/NOPB WSON NGT 8 1000 210.0 185.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 2-Sep-2015
Pack Materials-Page 2
MECHANICAL DATA
NGT0008A
www.ti.com
SDC08A (Rev A)
www.ti.com
PACKAGE OUTLINE
C
.228-.244 TYP
[5.80-6.19]
.069 MAX
[1.75]
6X .050
[1.27]
8X .012-.020
[0.31-0.51]
2X
.150
[3.81]
.005-.010 TYP
[0.13-0.25]
0 - 8 .004-.010
[0.11-0.25]
.010
[0.25]
.016-.050
[0.41-1.27]
4X (0 -15 )
A
.189-.197
[4.81-5.00]
NOTE 3
B .150-.157
[3.81-3.98]
NOTE 4
4X (0 -15 )
(.041)
[1.04]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
18
.010 [0.25] C A B
5
4
PIN 1 ID AREA
SEATING PLANE
.004 [0.1] C
SEE DETAIL A
DETAIL A
TYPICAL
SCALE 2.800
www.ti.com
EXAMPLE BOARD LAYOUT
.0028 MAX
[0.07]
ALL AROUND
.0028 MIN
[0.07]
ALL AROUND
(.213)
[5.4]
6X (.050 )
[1.27]
8X (.061 )
[1.55]
8X (.024)
[0.6]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
METAL SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
EXPOSED
METAL
OPENING
SOLDER MASK METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED
METAL
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
SYMM
1
45
8
SEE
DETAILS
SYMM
www.ti.com
EXAMPLE STENCIL DESIGN
8X (.061 )
[1.55]
8X (.024)
[0.6]
6X (.050 )
[1.27] (.213)
[5.4]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
SYMM
SYMM
1
45
8
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TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
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IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
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