1. Product profile
1.1 General description
130 W LDMOS power transistor intende d for radar application s in the 2.9 GHz to 3.3 GHz
range.
1.2 Features and benefits
T yp ical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply volt age
of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %:
Output power = 130 W
Power gain = 12.5 dB
Efficiency = 47 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2.9 GHz to 3.3 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, rega rd in g Re str ictio n of Haza rd ous Sub s tances
(RoHS)
BLS6G2933S-130
LDMOS S-band radar power transistor
Rev. 03 — 3 March 2010 Product data sheet
Table 1. Typical perf ormance
Typical RF performance at Tcase =25
°
C; tp = 300
μ
s;
δ
= 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation f VDS PLGpηDtrtf
(GHz) (V) (W) (dB) (%) (ns) (ns)
pulsed RF 2.9 to 3.3 32 130 12.5 47 20 6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 3 March 2010 2 of 12
NXP Semiconductors BLS6G2933S-130
LDMOS S-band radar power transistor
1.3 Applications
S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency
range
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1drain
2gate
3source [1] 3
2
1
sym11
2
1
3
2
Table 3. Ordering informati on
Type number Package
Name Description Version
BLS6G2933S-130 - ceramic earless flanged cavity package; 2 leads SOT922-1
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min Max Unit
VDS drain-source voltage - 60 V
VGS gate-source voltage −0.5 +13 V
IDdrain current - 33 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 225 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Zth(j-mb) transient thermal impedance from junction
to mounting base Tcase =85°C; PL= 130 W
tp=100μs; δ = 10 % 0.23 K/W
tp=200μs; δ = 10 % 0.28 K/W
tp=300μs; δ = 10 % 0.32 K/W
tp=100μs; δ = 20 % 0.33 K/W
BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 3 March 2010 3 of 12
NXP Semiconductors BLS6G2933S-130
LDMOS S-band radar power transistor
6. Characteristics
7. Application information
Table 6. Characteristics
Tj=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source brea kdown
voltage VGS =0V; I
D=0.6mA 60 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 180 mA 1.4 1.8 2.4 V
IDSS drain leakage current VGS =0V; V
DS =28V--4.2μA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 27 33 - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 450 nA
gfs forward transconductance VDS =10V; I
D=9A 8.1 13 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) +3.75 V;
ID=6.3A - 0.085 0.135 Ω
Table 7. Application information
Mode of operation: pulsed RF; tp = 300
μ
s;
δ
= 10 %; RF performance at VDS =32V; I
Dq = 100 mA;
Tcase =25
°
C; unless otherwise specified, in a class-AB production circuit.
Symbol Parameter Conditions Min Typ Max Unit
PLoutput power - 130 - W
VCC supply voltage PL=130W - - 32 V
Gppower gain PL= 130 W 10 12.5 - dB
RLin input return loss PL= 130 W 7.5 10 - dB
PL(1dB) output power at 1 dB gain compression - 140 - W
ηDdrain efficiency PL=130W 40 47 - %
Pdroop(pulse) pulse droop power PL=130W - 0 0.5 dB
trrise time PL= 130 W - 20 50 ns
tffall time PL=130W - 6 50 ns
BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 3 March 2010 4 of 12
NXP Semiconductors BLS6G2933S-130
LDMOS S-band radar power transistor
7.1 Ruggedness in class-AB operation
The BLS6G2933S-130 is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: VDS =32V;
IDq =100mA; P
L=130W; t
p = 300 μs; δ = 10 %.
Table 8. Typical imp ed ance
f ZSZL
GHz Ω Ω
2.9 2.2 − j7.6 4.5 − j5.6
3.0 2.5 − j6.6 4.3 − j5.7
3.1 3.2 − j5.6 4.0 − j5.8
3.2 4.5 − j4.8 3.6 − j5.8
3.3 6.8 − j5.3 3.2 − j5.8
Fig 1. Definition of transistor impedance
001aaf05
9
drain
ZL
ZS
gate
BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 3 March 2010 5 of 12
NXP Semiconductors BLS6G2933S-130
LDMOS S-band radar power transistor
7.2 Graphs
VDS =32V; I
Dq = 100 mA; tp = 300 μs; δ = 10 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
VDS =32V; I
Dq = 100 mA; tp = 100 μs; δ = 20 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
Fig 2. Power gain as a functio n of load powe r; typical
values Fig 3. Power gain as a function of load power; typical
values
VDS =32V; I
Dq = 100 mA; tp = 300 μs; δ = 10 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
VDS =32V; I
Dq = 100 mA; tp = 100 μs; δ = 20 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
Fig 4. Drain efficiency as a func tion of load power;
typical valu e s Fig 5. Drain efficiency as a function of load power;
typical values
PL (W)
0 18012060
001aaj266
6
10
14
Gp
(dB)
2
(2)
(3)
(1)
PL (W)
0 18012060
001aaj267
6
10
14
Gp
(dB)
2
(2)
(3)
(1)
PL (W)
0 18012060
001aaj268
20
40
60
ηD
(%)
0
(2)
(3)
(1)
PL (W)
0 18012060
001aaj269
20
40
60
ηD
(%)
0
(2)
(3)
(1)
BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 3 March 2010 6 of 12
NXP Semiconductors BLS6G2933S-130
LDMOS S-band radar power transistor
VDS =32V; I
Dq = 100 mA; tp = 300 μs; δ = 10 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
VDS =32V; I
Dq = 100 mA; tp = 100 μs; δ = 20 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
Fig 6. Load power as a function of input power;
typical valu e s Fig 7. Load power as a function of input power;
typical values
PL = 130 W; VDS =32V; I
Dq = 100 mA; tp= 300 μs;
δ=10%. PL = 130 W; VDS =32V; I
Dq = 100 mA; tp= 100 μs;
δ=20%.
Fig 8. Power gain and drain efficiency as function of
frequency; typical values Fig 9. Power gain and drain efficiency as function of
frequency; typical values
Pi (W)
018126
001aaj270
60
120
180
PL
(W)
0
(2)
(3)
(1)
Pi (W)
018126
001aaj271
60
120
180
PL
(W)
0
(2)
(3)
(1)
f (MHz)
2850 335032503050 31502950
001aaj272
8
10
6
12
14
Gp
(dB)
4
30
40
20
50
60
ηD
(%)
10
Gp
ηD
f (MHz)
2850 335032503050 31502950
001aaj273
8
10
6
12
14
Gp
(dB)
4
30
40
20
50
60
ηD
(%)
10
Gp
ηD
BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 3 March 2010 7 of 12
NXP Semiconductors BLS6G2933S-130
LDMOS S-band radar power transistor
8. Test information
Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.15 and thickness = 0.64 mm.
See Table 9 for list of components.
Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit
001aaj27
5
C2C1
R1 C5 C6 C7 C8
C4
C3
Table 9. List of components
See Figure 10.
Component Description Value Quantity Remarks
C1, C2, C5, C7 multilayer ceramic chip capacitor 33 pF 1 ATC 100A or equivalent
C3 multilayer ceramic chip capacitor 1 μF 1 ATC 900A or equivalent
C4 multilayer ceramic chip capacitor 47 μF; 63 V 1
C6 multilayer ceramic chip capacitor 1 nF 2 ATC 700A or equivalent
C8 electrolytic capacitor 68 μF; 63 V 1
R1 SMD resistor 47 Ω1 SMD 0603
BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 3 March 2010 8 of 12
NXP Semiconductors BLS6G2933S-130
LDMOS S-band radar power transistor
9. Package outline
Fig 11. Package outline SOT922-1
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT922-1
SOT922-
1
05-11-14
05-11-22
DIMENSIONS (mm are the original dimensions)
C
eramic earless flanged cavity package; 2 leads
0 5 10 mm
scale
UNIT A
mm
Db
12.42
12.17
0.15
0.10
17.58
17.22
9.27
9.02
15.62
14.34
9.53
9.27
4.22
3.53
c U2
0.25
w2
F
1.32
0.81
U1
17.75
17.50
L
3.05
2.03
Q
1.70
1.45
EE
1
9.53
9.27
inches 0.489
0.479
0.006
0.004
0.692
0.678
D1
17.50
17.25
0.689
0.679
0.365
0.355
0.615
0.525
0.375
0.365
0.166
0.139 0.010
0.052
0.032
0.699
0.689
0.12
0.08
0.067
0.057
0.375
0.365
H
D
A
D1
D
F
3
Dw2 M M
1
2
U2
U1
b
H
L
c
Q
E
E1
BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 3 March 2010 9 of 12
NXP Semiconductors BLS6G2933S-130
LDMOS S-band radar power transistor
10. Abbreviations
11. Revision history
Table 10. Abbreviations
Acronym Description
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
S-band Short wave Band
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLS6G2933S-130_3 20100303 Product data sheet - BLS6G2933S-130_2
Modifications: The status of the data sheet was changed to “Product data sheet”.
BLS6G2933S-130_2 20090618 Preliminary data sheet - BLS6G2933S-130_1
BLS6G2933S-130_1 20081211 Objective data sheet - -
BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 3 March 2010 10 of 12
NXP Semiconductors BLS6G2933S-130
LDMOS S-band radar power transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
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Short data sheet — A short data sheet is an extract from a full dat a sheet
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for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information se e the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the shor t data sheet, the
full data sheet shall pre va il.
Product specificat io n — The information and data provided in a Product
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Applications — Applications that are described herein for any of these
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings onl y and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminar y specification.
Product [short] data sheet Production This document contains the product specification.
BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 3 March 2010 11 of 12
NXP Semiconductors BLS6G2933S-130
LDMOS S-band radar power transistor
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without NXP Semiconductors’ warranty of the
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12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLS6G2933S-130
LDMOS S-band radar power transistor
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 March 2010
Document identifier: BLS6G2933S-130_3
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 4
7.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Contact information. . . . . . . . . . . . . . . . . . . . . 11
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
