2SC5200 - Fairchild Semiconductor

2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor

2SC5200/FJL4315 Rev. A2 1

March 2008

2SC5200/FJL4315

NPN Epitaxial Silicon Transistor

Applications

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier

Features

• High Current Capability: IC = 15A.

• High Power Dissipation : 150watts.

• High Frequency : 30MHz.

• High Voltage : VCEO=230V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1943/FJL4215.

• Thermal and electrical Spice models are available.

• Same transistor is also available in:

-- TO3P package, 2SC5242/FJA4313 : 130 watts

-- TO220 package, FJP5200 : 80 watts

-- TO220F package, FJPF5200 : 50 watts

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* Ta=25°C unless otherwise noted

* Device mounted on min imu m pad size

hFE Classification

Symbol Parameter Ratings Units

BVCBO Collector-Base Voltage 230 V

BVCEO Collector-Emitter Voltage 230 V

BVEBO Emitter-Base Voltage 5 V

ICCollector Current(DC) 15 A

IBBase Current 1.5 A

PDTotal Device Dissipation(TC=25°C)

Derate above 25°C150

1.04 W

W/°C

TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C

Symbol Parameter Max. Units

RθJC Thermal Resistance, Junction to Case 0.83 °C/W

Classification R O

hFE1 55 ~ 110 80 ~ 160

1.Base 2.Collector 3.Emitter

1TO-264

2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor

2SC5200/FJL4315 Rev. A2 2

Electrical Characteristics* Ta=25°C unless otherwise noted

* Pulse Test: Pulse Width=2 0µs, Duty Cycle≤2%

Ordering Information

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collector-Base Breakdown Voltage IC=5mA, IE=0 230 V

BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞230 V

BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V

ICBO Collector Cut-off Current VCB=230V, IE=0 5.0 µA

IEBO Emitter Cut-off Current VEB=5V, IC=0 5.0 µA

hFE1 DC Current Gain VCE=5V, IC=1A 55 160

hFE2 DC Current Gain VCE=5V, IC=7A 35 60

VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V

VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V

fTCurrent Gain Bandwidth Product VCE=5V, IC=1A 30 MHz

Cob Output Capacitance VCB=10V, f=1MHz 200 pF

Part Number Marking Package Packing Method Remarks

2SC5200RTU C5200R TO-264 TUBE hFE1 R grade

2SC5200OTU C5200O TO-264 TUBE hFE1 O grade

FJL4315RTU J4315R TO-264 TUBE hFE1 R grade

FJL4315OTU J4315O TO-264 TUBE hFE1 O grade

2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor

2SC5200/FJL4315 Rev. A2 3

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

Figure 5. Base-Emitter On Voltage Figure 6. Thermal Resistance

0 2 4 6 8 10 12 14 16 18 20

IB = 0

IB=200mA

IB = 120mA

IB = 140mA

IB = 160mA

IB = 180mA

IB = 100mA

IB = 60mA

IB = 80mA

IB = 40mA

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

110

100

Vce=5V

Tj=-25oC

Tj=25oC

Tj=125oC

hFE, DC CURRENT GAIN

Ic [A ], COLL EC TO R C UR RE NT

0.1 1 10

100

1000

10000

Ic=10Ib

Tj=-25oCTj=25oC

Tj=125oC

Vbe(sat)[mV], SATURATION VOLTAGE

Ic[A], COLLECTOR CURRENT

0.1 1 10

100

1000

10000

Ic=10Ib

Tj=-25?

Tj=25?

Tj=125?

Vce(sat)[mV], SATURATION VOLTAGE

Ic[A], C OL L E CT OR CU RR EN T

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

12 VCE = 5V

IC[A], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

1E-6 1E-5 1E-4 1E-3 0.01 0.1 1

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Transient Thermal Resistance, Rthjc[oC / W]

Pulse duration [sec]

2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor

2SC5200/FJL4315 Rev. A2 4

Typical Characteristics

Figure 7. Power Derating Figure 8. Safe Operating Area

0 25 50 75 100 125 150 175

100

120

140

160

PC[W], POWER DISSI PA TION

TC[oC], CASE TEMPERATURE

1 10 100

0.01

0.1

100

*SINGLE NONREPETITIVE

PULSE TC=25[oC]

10ms*

100ms*

IC MAX. (Pulsed*)

IC MAX. (DC)

IC [A], COLLECTOR CURRENT

VCE [V], COL L ECT OR-E MITT ER VOL T A GE

2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor

2SC5200/FJL4315 Rev. A2 5

Package Dimensions

5.45TYP

[5.45

±0.30

]5.45TYP

[5.45

±0.30

]

4.90

±0.20

20.00

±0.20

(8.30) (8.30) (1.00)

(0.50)

(2.00

)

(7.00)

(R1.00)

(R2.00)

ø3.30

±0.20

(7.00)

(1.50)

(1.50) (1.50)

2.50

±0.20

3.00

±0.20

2.80

±0.3

1.00

+0.25

–0.10

0.60

+0.25

–0.10

1.50

±0.20

6.00

±0.20

20.00

±0.20

20.00

±0.50

5.00

±0.20

.50

±0.20

2.50

±0.10

(9.00)

(2.00)

(

1.50)

(0.15)

(

2.80) (4.00)

(11.00)

TO-264

Dimensions in Millimeters

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor2SC5200/FJL4315

2SC5200/FJL4315 Rev. A2 6

Rev. I31

TRADEMARKS

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is not intended to be an exhaustive list of all such trademarks.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARI SING OUT OF

THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE

UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF

FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE

PRODUCTS.

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As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body, or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to result

in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or

system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx®

Build it Now™

CorePLUS™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FPS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

GTO™

i-Lo™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MillerDrive™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP-SPM™

Power220®

Power247®

POWEREDGE®

Power-SPM™

PowerTrench®

Programmable Active Droop™

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

The Power Franchise®

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

µSerDes™

UHC®

UniFET™

VCX™

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub-

lished at a later date. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-

ued by Fairchild semiconductor. The datasheet is printed for reference infor-

mation only.