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TIP145 / TIP146 / TIP147 — PNP Epitaxial Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145 / TIP146 / TIP147 Rev. B1 1
October 2009
TIP145 / TIP146 / TIP147
PNP Epitaxial Silicon Darlington Transistor
Features
• Monolithic Constructio n With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.)
• Industrial Use
• Complement to TIP140/141/142
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Value Units
VCBO Collector-Base Volt age : TIP145
: TIP146
: TIP147
- 60
- 80
- 100
V
V
V
VCEO
Collector-Emitter Voltage : TIP145
: TIP146
: TIP147
- 60
- 80
- 100
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 10 A
ICP Collector Current (Pulse) - 15 A
IB Base Current (DC) - 0.5 A
PC Collector Dissipation (TC=25°C) 125 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 to +150 °C
TO-3P
1
1.Base 2.Collector 3.Emitter
Equivalent Circuit
B
E
C
R1 R2
R1 8kΩ≅
R2 0.12kΩ≅
TIP145 / TIP146 / TIP147 — PNP Epitaxial Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145 / TIP146 / TIP147 Rev. B1 2
Electrical Characteristics* TA=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP145
: TIP146
: TIP147
IC = - 30mA, IB = 0 - 60
- 80
- 100
V
V
V
ICEO Collector Cut-off Current
: TIP145
: TIP146
: TIP147
VCE = - 30V, IB = 0
VCE = - 40V, IB = 0
VCE = - 50V, IB = 0
- 2
- 2
- 2
mA
mA
mA
ICBO Collector Cut-off Current
: TIP145
: TIP146
: TIP147
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
- 1
- 1
- 1
mA
mA
mA
IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 - 2 mA
hFE DC Current Gain VCE = - 4V,IC = - 5A
VCE = - 4V, IC = - 10A 1000
500
VCE(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA
IC = - 10A, IB = - 40mA - 2
- 3 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V
VBE(on) Base-Emitter On Voltage VCE = - 4V, IC = - 10A - 3 V
tD Delay Time VCC = - 30V, IC = - 5A
IB1= -20mA, IB2 = 20mA
RL = 6Ω
0.15 μs
tR Rise Time 0.55 μs
tSTG Storage Time 2.5 μs
tF Fall Time 2.5 μs
TIP145 / TIP146 / TIP147 — PNP Epitaxial Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145 / TIP146 / TIP147 Rev. B1 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -2 -3 -4 -5
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
IB = -2000μAIB = -1800μA
IB = -1600μA
IB = -1400μA
IB = -1200μA
IB = -1000μA
IB = -800μA
IB = -600μA
IB = -400μA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100
100
1000
10000
100000
VCE = -4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10 IC=-500IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CUR RE NT
-1 -10 -100 -1000
-10
-100
-1000
f=0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Cob[pF], CAPA CITANCE
-1 -10 -100 -1000
-0.1
-1
-10
-100
TIP146
TIP147
TIP145
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 255075100125150175
0
25
50
75
100
125
150
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
R
0.50
16.20
15.40
5.20
4.80
20.10
19.70
2.20
1.80
3.70
3.30
3.20
2.80
1.20
0.80
5.45 5.45
18.90
18.50
1.85
0.55
M
1.65
1.45
R
0.50
5.00
4.60
2.60
2.20
0.75
0.55
2.00
1.60
3° 4°
3°
3.30
3.10
7.20
6.80
13.80
13.40
16.96
16.56
20.30
19.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAWING FILE NAME:
TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
13
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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