T4-LDS-0161, Rev. 2 (10/15/13) ©2013 Microsemi Corporation Page 1 of 4
2N3960
Compliant NPN Silicon Switching Transistor
Qualified per MIL-PRF-19500/399
Qualified Levels:
JAN, JAN TX, and
JANTXV
DESCRIPTION
This 2N3960 epit axial planar transistor is military qual ifi ed up to the JANTXV level for high-
reliability application s . It features a thru -hole TO-18 package. This device is also available in
a low profile ceramic U B package.
TO-18 (TO-206AA)
Package
Also available in:
UB package
(surface mount)
2N3960UB
Important: For the latest information, v isit our website http://www.microsemi.com.
FEATURES
• Sur face mount equiv alent of JEDEC registered 2N3960 number
• JAN, JANTX, and JANTXV qualifications are avail able per MIL-PRF-19500/366.
(See part nomenclature for all available options .)
• RoHS com pliant v er sions av ailable
APPLICATIONS / BENE FITS
• General purpose transistors for medium power applications requiring high frequency switching
• Leaded, hermetically sealed TO-18 package
• Lightweight
• Military and other high-reliability applications
MAXIMUM RATINGS @ TC = +25 ºC unless otherwise noted
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol Value Unit
Junction & Storage Temperature Range TJ, Tstg -65 to +200 °C
Collector-Emitter Voltage VCEO 12 V
Collector-Base Voltage V
CBO
20 V
Emitter-Base Voltage VEBO 4.5 V
Total Power Dissipation
@ T A = +25 °C (1)
PT
400
mW
Notes: 1. Derate linearly 2.3 mW/°C above TA = +25 °C.
T4-LDS-0161, Rev. 2 (10/15/13) ©2013 Microsemi Corporation Page 2 of 4
2N3960
M ECHANICAL and PACKAGING
• CASE: Hermetically sealed, nickel plated kovar base, nickel cap
• TERMINALS: Kovar with Gold plate over nickel for JANS, plus solder dip for JAN, JANTX, and JANTXV
• MARKING: Part number, date code, manufacturer’s ID
• WEIGHT: Approximately 0.3 grams
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3960
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
SYMBOL S & DEFI NITIONS
Symbol
Definition
IB
Base cur rent: The value of the dc current into the base terminal.
IC
Collector current: The value of the dc current into the collector terminal.
VCB Collector-base voltage: The dc voltage between the collector and the base.
VCBO
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
VCE
Collector-emitter voltage: The dc voltage between the collector and the emitter.
VCEO
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminal s when the base
terminal is open-circuited.
VCC
Collector-suppl y voltage: The supply voltage applied to a circuit connected to the collector.
VEB
Emitter-base voltage: The dc voltage between the emitter and the base
VEBO
Emitter-base voltage, collector open: The voltage between the emi tter and base t er mina ls wit h the collector termi nal
open-circuited.
T4-LDS-0161, Rev. 2 (10/15/13) ©2013 Microsemi Corporation Page 3 of 4
2N3960
ELECTRI CAL CHARACTERISTICS @ TA = +2 5 ° C , u nless other wis e noted
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTI CS
Collector-Emit ter Breakdown Voltage
I
C
= 10 µA, puls e d
V(BR)CEO
12
V
Collector-Base Cutoff Current
VCB = 20 V
ICBO
10
µA
Emitter-Base C utoff Current
V
EB
= 4. 5 V
IEBO
10
µA
Collector-Emit ter Cut off Current
VCE = 10 V, VEB = 0.4 V
VCE = 10 V, VEB = 2.0 V
ICEX1
ICEX2
1
5
µA
nA
ON CHARACTERISTICS (1)
Forward-Curren t Transfer R atio
IC = 1.0 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 30 mA, VCE = 1 V
hFE
40
60
30
300
Collector-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
IC = 30 mA, IB = 3.0 mA
VCE(sat)
0.2
0.3
V
Base-Emi tt er Satu r ation V oltage
IC = 1.0 mA, VCE = 1.0 V
IC = 30 mA, VCE = 1.0 V
VBE
0.8
1.0
V
DYNAMIC CHARACTE RIST ICS
Forward Cur r ent Tran sfer Rati o, Magn i tude
IC = 5.0 mA, VCE = 4 V , f = 100 MHz
IC = 10 mA, VCE = 4 V, f = 100 MHz
IC = 30 mA, VCE = 4 V, f = 100 MHz
|hfe|
13
14
12
O utput Capac itance
V
CB
= 4 V, I
E
= 0, 100 kHz < f < 1 MHz
Cobo
2.5
pF
I nput Cap acitance
V
EB
= 0. 5 V, I
C
= 0, 100 kHz < f < 1.0 M H z
Cibo
2.5
pF
(1) Pulse Test: pulse width = 300 µs, duty cycle < 2.0%
T4-LDS-0161, Rev. 2 (10/15/13) ©2013 Microsemi Corporation Page 4 of 4
2N3960
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions ar e in inches.
2. Millimeters are given for information only.
3. Symbol TL is m easured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane 0.054 inch (1.37 mm) +.001 inch (0.0 3 mm) -0.000 inch (0.00 mm) below seating
plane shall be with in 0.007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be
measured by direct methods or by gauge.
7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL m inimum.
8. Lead number three is electrically connected to case.
9. Beyond r maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm) .
10. Symbol r applied to both inside corners of tab.
11. Measured in a zone beyond 0.250 (6.35 mm) from the seating plane.
12. Measured in the zone between 0.050 (1.27 mm) and 0.250 (6.35 mm) from the seating plane.
13. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
14. Lead 1 is emitter, lead 2 i s base, and ca se is collector.
Dimensions
Symbol
Inch
Millimeters
Note
Min
Max
Min
Max
CD
0.178
0.195
4.52
4.95
CH
0.170
0.210
4.32
5.33
HD
0.209
0.230
5.31
5.84
LC
0.100 TP
2.54 TP
6
LD
0.016
0.021
0.41
0.53
7,11
LL
0.500
0.750
12.70
19.05
7
LU
0.016
0.019
0.41
0.48
12
L1
-
0.050
-
1.27
7
L2
0.250
-
6.35
-
7
P
0.100
-
2.54
-
5
Q
-
0.040
-
1.02
4
TL
0.028
0.048
0.71
1.22
3
TW
0.036
0.046
0.91
1.17
9
r
-
0.010
-
0.25
10
α
45° TP
45° TP
6
