Freescale Semiconductor Technical Data Document Number: MHT2000N Rev. 0, 5/2014 RF LDMOS Integrated Power Amplifiers Wideband integrated circuit is suitable for industrial heating applications operating at 2450 MHz. This multi--stage structure is rated for 26 to 32 V operation in both CW and pulse applications. Typical CW Performance: VDD = 28 Vdc, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 W CW, f = 2450 MHz Power Gain -- 27.7 dB Power Added Efficiency -- 43.8% Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 W CW Output Power Features Multi--stage structure is rated for 26 to 32 V Operation Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) Integrated ESD Protection Excellent Thermal Stability 225C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. MHT2000NR1 MHT2000GNR1 2450 MHz, 25 W CW, 28 V INDUSTRIAL HEATING, RUGGED RF LDMOS INTEGRATED POWER AMPLIFIERS TO--270WB--16 PLASTIC MHT2000NR1 TO--270WBG--16 PLASTIC MHT2000GNR1 VDS1 RFin VGS1 VGS2 RFout/VDS2 Quiescent Current Temperature Compensation (1) VDS1 GND VDS1 NC NC NC 1 2 3 4 5 16 15 GND NC RFin 6 14 RFout/VDS2 NC VGS1 VGS2 VDS1 GND 7 8 9 10 11 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MHT2000NR1 MHT2000GNR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDS -0.5, +65 Vdc Gate--Source Voltage VGS -0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -65 to +150 C TC 150 C Case Operating Temperature Operating Junction Temperature (1,2) Input Power TJ 225 C Pin 20 dBm Symbol Value (2,3) Unit Table 2. Thermal Characteristics (In Freescale Narrowband Test Fixture) Characteristic Thermal Resistance, Junction to Case (Case Temperature 80C, Pout = 25 W CW) Stage 1, 28 Vdc, IDQ1 = 55 mA Stage 2, 28 Vdc, IDQ2 = 195 mA RJC C/W 6.1 1.2 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) II Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) VGS(th) 1.2 1.9 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 55 mA) (4) VGS(Q) -- 2.7 -- Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 55 mAdc) (4,5) VGG(Q) 10.3 11.2 12.6 Vdc Characteristic Stage 1 -- Off Characteristics Stage 1 -- On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Measured in Freescale Narrowband Test Fixture. 5. See Appendix A for functional test measurements and test fixture. (continued) MHT2000NR1 MHT2000GNR1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 80 Adc) VGS(th) 1.2 1.9 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 195 mAdc) (1) VGS(Q) -- 2.7 -- Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 195 mAdc) (1,2) VGG(Q) 9.5 10.5 11.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 800 mAdc) VDS(on) 0.15 0.47 0.8 Vdc Coss -- 111 -- pF Stage 2 -- Off Characteristics Stage 2 -- On Characteristics Stage 2 -- Dynamic Characteristics (3) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Narrowband Performance Specifications (4) (In Freescale Narrowband Test Fixture,(1) 50 ohm system) VDD = 28 Vdc, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 W CW, f = 2450 MHz Power Gain Gps 25.5 27.7 30.5 dB Power Added Efficiency PAE 41.5 43.8 -- % Input Return Loss IRL -- -18 -10 dB (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset. Power Gain Gps 25.5 28.5 30.5 dB Power Added Efficiency PAE 15 17 -- % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. 2. 3. 4. PAR -- 9 -- dB ACPR -- -50 -46 dBc IRL -- -15 -10 dB Measured in Freescale Narrowband Test Fixture. See Appendix A for functional test fixture documentation. Part internally matched both on input and output. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. MHT2000NR1 MHT2000GNR1 RF Device Data Freescale Semiconductor, Inc. 3 VDD1 VD2 B1 C17 C16 C9 C15 28 V C8 C14 C7 RF INPUT 1 2 3 4 5 Z1 Z2 Z3 Z4 R4 R5 C1 10 11 NC C13 NC 16 C12 NC 15 NC NC NC 7 NC 8 9 C5 VG1 DUT Z13 14 6 C4 C6 NC Z5 Z6 Z7 Z8 Z9 Z10 Z12 Z14 C11 C10 Quiescent Current Temperature Compensation Z11 RF OUTPUT NC 13 NC 12 C2 R6 C3 VG2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.500 x 0.027 Microstrip 0.075 x 0.127 Microstrip 1.640 x 0.027 Microstrip 0.100 x 0.042 Microstrip 0.151 x 0.268 Microstrip 0.025 x 0.268 x 0.056 Taper 0.100 x 0.056 Microstrip 0.306 x 0.056 Microstrip Z9 Z10 Z11 Z12 Z13* Z14 PCB 0.040 x 0.061 Microstrip 0.020 x 0.050 Microstrip 0.050 x 0.050 Microstrip 0.050 x 0.027 Microstrip 0.338 x 0.020 Microstrip 1.551 x 0.027 Microstrip Rogers R04350B, 0.0133, r = 3.48 * Line length includes microstrip bends Figure 3. MHT2000NR1 Narrowband Test Circuit Schematic Table 6. MHT2000NR1 Narrowband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 47 , 100 MHz Short Ferrite Bead 2743019447 Fair--Rite C1, C4, C7, C12, C15 6.8 pF Chip Capacitors ATC600S6R8CT250XT ATC C2, C5, C8, C13 10 nF Chip Capacitors C0603C103J5RAC Kemet C3, C6, C9, C14 1 F, 50 V Chip Capacitors GRM32RR71H105KA01B Murata C10 2.4 pF Chip Capacitor ATC600S2R4BT250XT ATC C11 3.3 pF Chip Capacitor ATC600S3R3BT250XT ATC C16, C17 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata R1, R4 12 K, 1/4 W Chip Resistors CRCW12061202FKEA Vishay R2, R3, R5, R6 1 K, 1/4 W Chip Resistors CRCW12061001FKEA Vishay MHT2000NR1 MHT2000GNR1 4 RF Device Data Freescale Semiconductor, Inc. B1 C9 C8 C7 C4 R4 R5 C5 R6 C1 C2 VG1 C16 C15 C14 C13 CUT OUT AREA C17 C12 C10 C11 C6 R2 R1 R3 VG2 C3 Figure 4. MHT2000NR1 Narrowband Test Circuit Component Layout MHT2000NR1 MHT2000GNR1 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS -- NARROWBAND 50 40 28 30 27 20 VDD = 28 Vdc IDQ1 = 55 mA IDQ2 = 195 mA f = 2450 MHz 25 1 10 47 45 Actual 44 43 41 VDD = 28 Vdc, IDQ1 = 55 mA IDQ2 = 195 mA, f = 2450 MHz 13 14 15 30 50 29 40 VD1 = 32 V 30 30 V 27 17 18 19 20 Figure 6. CW Output Power versus Input Power Figure 5. Power Gain and Power Added Efficiency versus CW Output Power Gps, POWER GAIN (dB) 16 Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) CW 28 Ideal P1dB = 44.5 dBm (28.05 W) 46 42 0 100 10 P3dB = 44.9 dBm (30.9 W) 20 28 V VD2 = 28 Vdc IDQ1 = 55 mA IDQ2 = 195 mA f = 2450 MHz 26 25 1 0.1 10 PAE, POWER ADDED EFFICIENCY (%) 26 48 Pout, OUTPUT POWER (dBm) 29 49 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 30 0 100 10 Pout, OUTPUT POWER (WATTS) CW Figure 7. Power Gain and Power Added Efficiency versus CW Output Power as a Function of VD1 50 28 V 29 30 V 32 V 28 40 30 30 V 27 VD2 = 28 V 20 32 V VD1 = 28 Vdc IDQ1 = 55 mA IDQ2 = 195 mA f = 2450 MHz 26 25 0.1 1 10 10 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 30 0 100 Pout, OUTPUT POWER (WATTS) CW Figure 8. Power Gain and Power Added Efficiency versus CW Output Power as a Function of VD2 MHT2000NR1 MHT2000GNR1 6 RF Device Data Freescale Semiconductor, Inc. Gps, POWER GAIN (dB) 30 50 IDQ1 varied from 45 mA to 65 mA 40 in 5 mA steps 29 IDQ1 = 65 mA 28 30 60 mA 55 mA 27 20 45 mA 50 mA VDD = 28 Vdc IDQ2 = 195 mA f = 2450 MHz 26 25 1 10 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS -- NARROWBAND 0 100 10 Pout, OUTPUT POWER (WATTS) CW Figure 9. Power Gain and Power Added Efficiency versus CW Output Power as a Function of IDQ1 50 28 215 mA 195 mA IDQ2 = 235 mA 40 175 mA 27 155 mA 30 IDQ2 varied from 155 mA to 235 mA in 20 mA steps 26 VDD = 28 Vdc IDQ1 = 55 mA f = 2450 MHz 25 1 10 20 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 29 10 100 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Power Added Efficiency versus CW Output Power as a Function of IDQ2 109 MTTF (HOURS) 108 1st Stage 107 2nd Stage 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 25 W CW, and PAE = 43.8%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature MHT2000NR1 MHT2000GNR1 RF Device Data Freescale Semiconductor, Inc. 7 Zo = 50 Zload Zsource f = 2450 MHz f = 2450 MHz VDD = 28 Vdc, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 W CW f MHz Zsource Zload 2450 32 - j6.256 6.2 - j1.17 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance -- Narrowband MHT2000NR1 MHT2000GNR1 8 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MHT2000NR1 MHT2000GNR1 RF Device Data Freescale Semiconductor, Inc. 9 MHT2000NR1 MHT2000GNR1 10 RF Device Data Freescale Semiconductor, Inc. MHT2000NR1 MHT2000GNR1 RF Device Data Freescale Semiconductor, Inc. 11 MHT2000NR1 MHT2000GNR1 12 RF Device Data Freescale Semiconductor, Inc. MHT2000NR1 MHT2000GNR1 RF Device Data Freescale Semiconductor, Inc. 13 MHT2000NR1 MHT2000GNR1 14 RF Device Data Freescale Semiconductor, Inc. MHT2000NR1 MHT2000GNR1 RF Device Data Freescale Semiconductor, Inc. 15 MHT2000NR1 MHT2000GNR1 16 RF Device Data Freescale Semiconductor, Inc. MHT2000NR1 MHT2000GNR1 RF Device Data Freescale Semiconductor, Inc. 17 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2014 Description Initial Release of Data Sheet MHT2000NR1 MHT2000GNR1 18 RF Device Data Freescale Semiconductor, Inc. APPENDIX A MHT2000NR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA B1 C16 C17 C15 C9 C8 C7 R5 C1 R6 R1 R2 R3 VG1 VG2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C2 C6 C3 0.500 x 0.027 Microstrip 0.075 x 0.127 Microstrip 1.640 x 0.027 Microstrip 0.100 x 0.042 Microstrip 0.151 x 0.268 Microstrip 0.025 x 0.268 x 0.056 Taper 0.050 x 0.056 Microstrip 0.356 x 0.056 Microstrip CUT OUT AREA R4 C12 C13 C4 C5 C14 C10 Z9 Z10 Z11 Z12 Z13* Z14 PCB C11 0.040 x 0.061 Microstrip 0.020 x 0.050 Microstrip 0.050 x 0.050 Microstrip 0.050 x 0.027 Microstrip 0.338 x 0.020 Microstrip 1.551 x 0.027 Microstrip Rogers R04350B, 0.0133, r = 3.48 * Line length includes microstrip bends Figure A--1. MHT2000NR1 Test Circuit Component Layout Table A--1. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset. Power Gain Gps 25.5 28.5 30.5 dB Power Added Efficiency PAE 15 17 -- % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR -- 9 -- dB ACPR -- -50 -46 dBc IRL -- -15 -10 Adjacent Channel Power Ratio Input Return Loss dB (continued) MHT2000NR1 MHT2000GNR1 RF Device Data Freescale Semiconductor, Inc. 19 APPENDIX A MHT2000NR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA (continued) Table A--1. Electrical Characteristics (TC = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 77 mA) VGS(Q) -- 2.7 -- Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test) VGG(Q) 12.5 15.8 19.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 275 mAdc) VGS(Q) -- 2.7 -- Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test) VGG(Q) 11 14 18 Vdc Stage 1 -- On Characteristics Stage 2 -- On Characteristics Table A--2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case (Case Temperature 81C, Pout = 25 W CW) Symbol Stage 1, 28 Vdc, IDQ1 = 77 mA Stage 2, 28 Vdc, IDQ2 = 275 mA RJC Value 5.5 1.3 Unit C/W MHT2000NR1 MHT2000GNR1 20 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Home Page: freescale.com Web Support: freescale.com/support Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including "typicals," must be validated for each customer application by customer's technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2014 Freescale Semiconductor, Inc. MHT2000NR1 MHT2000GNR1 Document Number: RF Device DataMHT2000N Rev. 0, 5/2014Semiconductor, Freescale Inc. 21