FEATURES
DTrenchFETr Power MOSFET
Si4416DY
Vishay Siliconix
Document Number: 72266
S-31062—Rev. E, 26-May-03 www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
30
0.018 @ VGS = 10 V 9.0
30 0.028 @ VGS = 4.5 V 7.3
SD
SD
SD
GD
SO-8
5
6
7
8
Top View
2
3
4
1
G
S
N-Channel
MOSFET
D
Ordering Information: Si4416DY
Si4416DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20 V
Continuous Drain Current (TJ = 150
_
C)a
TA = 25_C
ID
9.0 6.9
Continuous Drain Current (TJ = 150_C)aTA = 70_CID7.5 5.6
A
Pulsed Drain Current (10 ms Pulse Width) IDM 50 A
Continuous Source Current (Diode Conduction)aIS2.1 1.2
Maximum Power Dissipationa
TA = 25_C
PD
2.5 1.4
W
Maximum Power DissipationaTA = 70_CPD1.6 0.9 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typ Max Unit
Mi J ti tAbit
a
t v 10 sec
R
40 50
Maximum Junction-to-AmbientaSteady-State RthJA 72 90 _C/W
Maximum Junction-to-Foot (Drain) Steady-State RthJF 16 20
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Si4416DY
Vishay Siliconix
www.vishay.com
2 Document Number: 72266
S-31062—Rev. E, 26-May-03
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min TypaMax Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V 1
mA
Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 55_C 25 mA
On-State Drain CurrentbID(on) VDS w 5 V, VGS = 10 V 20 A
Drain Source On State Resistanceb
rDS( )
VGS = 10 V, ID = 9.0 A 0.012 0.018
W
Drain-Source On-State Resistance
b
rDS(on) VGS = 4.5 V, ID = 7.3 A 0.019 0.028 W
Forward Transconductancebgfs VDS = 15 V, ID = 9.0 A 23 S
Diode Forward VoltagebVSD IS = 2.1 A, VGS = 0 V 1.2 V
Dynamica
Gate Charge QgVDS = 15 V, VGS = 5 V, ID = 9.0 A 14 20
Total Gate Charge Qgt 24 35
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 9.0 A 4.5 nC
Gate-Drain Charge Qgd
5.9
Gate Resistance Rg0.2 1.0 2.4 W
Turn-On Delay Time td(on) 16 20
Rise Time trVDD = 15 V, RL = 15 W10 20
Turn-Off Delay Time td(off)
,
ID ^ 1 A, VGEN = 10 V, RG = 6 W34 50 ns
Fall Time tf13 20
Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 A/ms 50 90
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
012345
0
10
20
30
40
50
012345
VGS = 10 thru 5 V
25_C
TC = 125_C
-55_C
3 V
Output Characteristics Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
4 V
Si4416DY
Vishay Siliconix
Document Number: 72266
S-31062—Rev. E, 26-May-03 www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.00
0.02
0.04
0.06
0.08
0.10
0246810
0.00
0.02
0.04
0.06
0.08
0.10
0 1020304050
0
2
4
6
8
10
0 5 10 15 20 25 0.6
0.8
1.0
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
0
300
600
900
1200
1500
1800
0 5 10 15 20 25 30
Crss
Coss
Ciss
VDS = 15 V
ID = 9 A VGS = 10 V
ID = 9 A
VGS = 10 V
Gate Charge
On-Resistance vs. Drain Current
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
VGS - On-Resistance (rDS(on) W)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (_C)
(Normalized)
- On-Resistance (rDS(on) W)
1.0 1.2
1
10
60
0.00 0.2 0.4 0.6 0.8
TJ = 25_C
TJ = 150_C
Source-Drain Diode Forward Voltage
VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
ID = 9 A
On-Resistance vs. Gate-to-Source Voltage
- On-Resistance (rDS(on) W)
VGS - Gate-to-Source Voltage (V)
VGS = 4.5 V
Si4416DY
Vishay Siliconix
www.vishay.com
4 Document Number: 72266
S-31062—Rev. E, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
30
50
10
20
Power (W)
Single Pulse Power
Time (sec)
40
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square W ave Pulse Duration (sec)
Normalized Ef fective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 72_C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1t2
Notes:
4. Surface Mounted
PDM
10-3 10-2 11010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef fective Transient
Thermal Impedance
1 100 6001010-1
10-2
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50 -25 0 25 50 75 100 125 150
ID = 250 mA
Threshold Voltage
Variance (V)VGS(th)
TJ - Temperature (_C)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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