OneNAND512/OneNAND1GDDP FLASH MEMORY
1
OneNAND SPECIFICATION
Density Part No. VCC(core & IO) Temperature PKG
512Mb KFG1216Q2M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF)
KFG1216D2M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF)
KFG1216U2M-DIB 3.3V(2.7V~3.6V) Industrial 63FBGA(LF)
1Gb KFH1G16Q2M-DEB 1.8V(1.7V~1.95V) Extended N/A
Version: Ver. 1.4
Date: June 15th, 2005
OneNAND512/OneNAND1GDDP FLASH MEMORY
2
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
OneNAND‚ is a trademark of Samsung Electronics Company, Ltd. Other names and brands may be claimed as the property of their
rightful owners.
Copyright © 2005, Samsung Electronics Company, Ltd
OneNAND512/OneNAND1GDDP FLASH MEMORY
3
Document Title
OneNAND
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
0.0.1
0.0.2
0.0.3
0.1
0.1.1
0.2
0.3
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Draft Date
Jan. 07, 2004
Jan. 29, 2004
Jan. 30, 2004
Feb. 03, 2004
Feb.11, 2004
Mar.9, 2004
Mar. 22, 2004
Mar. 31, 2004
History
Initial issue.
1. Add the "Invalid block management" and "Error management in read and
write operation"
2. Add the restriction in addressing for program operation.
3. Add the asynchronous write and latched asynchronous write mode timing
diagram.
4.Define new parameters in asynchronous write mode.
-tCH1 : 10ns, tCH2 : 0ns
1. Add the dual operation diagram.
2. Add the block replacement diagram
1. Edit the block replacement diagram
2. Add the 3.3V product.
1. Excluded Cache Program Operation
2. Added the descriptions for below operations
-. Reset
-. Write Protection
-. Burst Read Latency
-. Dual Operation
-. Invalid block definition and Identification method
-. Error in write or read operation
-. ECC
3. Revised program sequence
4. Some AC parameters are changed.
tACH : 9ns-->7ns, tCES : 7ns-->9ns, tAAVDS : 5ns-->7ns
tDS : 30ns-->10ns, tDH : 0ns-->4ns
5. Define new AC parameter.
tAWES(Address hold time in AVD low case of asynchronous write mode)
Min. 0ns
1. Correct an errata
Ball pitch of package is corrected.
0.5mm --> 0.8mm
2. Edit the timing diagram of burst read wrap around.(Figure 23,24)
1. The specification of 2.7V device is added.
1. The specification of 3.3V device is deleted.
2. Correct some typos.
OneNAND512/OneNAND1GDDP FLASH MEMORY
4
Document Title
OneNAND
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.4
1.0
1.1
1.2
Remark
Preliminary
Final
Final
Draft Date
June 22, 2004
August 5, 2004
August 26, 2004
October 26, 2004
History
1. Corrected the errata
2. Added spare assignment information in detail
3. Added NAND array memory map
4. Added manufacturer ID for CS as 00ECh
5. Added stepping ID for CS in version ID register
6. Divided default status of interrupt status register by Warm,Hot reset and
Cold reset
7. Revised Load operation flow chart
8. Revised Program operation flow chart
9. Deleted DBS setting step in Copy-back operation
10. Added OTP description
11. Revised OTP Load and Program flow chart
12. Added INT guidance
13. ECC description is revised
14. Added Data Protection Scheme during Power-down
15. Added DC/AC parameters
1. Deleted 2.7V product
2. Added 2.65V product
3. Added 3.3V product and industrial temperature in 3.3V product
4. Deleted Unlock/Lock BootRAM command
5. Added DBS setting step in Copy-back operation
6. Added 2.65V/3.3V DC parameters
7. Revised tCES from 9ns to 7ns
8. Deleted tOEH in asynchronous read operation
9. Revised NOP from 4 times per each main and spare in a page to 2 times
per sector
10. Revised Write Protection status description
11. Added DDP selection and operation guidance
12. Added 1Gb DDP device ID
13. Added INT bit status in Cold Reset operation
14. Moved Interrupt register setting before inputting command in all flow
charts
15. Revised Dual operation diagrams
16. Added and revised the asynchronous read operation timing diagram
17. Revised the asynchronous write operation timing diagram
18. Added the tREADY parameter in Hot Reset operation
1. Revised standby current for DDP
1. Corrected DDP device ID
2. Excluded Commercial Temperature range
3. Revised Cold Reset timing diagram
4. Added CE and RDY in Warm Reset diagram
5. Excluded Write while Load and Read while Program operation
6. Revised Extended Temperature minimum value from -25 to -30
7. Revised typical tOTP, tLOCK from 300us to 600us
8. Revised max tOTP, tLOCK from 600us to 1000us
9. Revised Icc4, Icc5 test condition
10. Added Endurance and Data Retention
OneNAND512/OneNAND1GDDP FLASH MEMORY
5
Document Title
OneNAND
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
1.3
1.4
Remark
Final
Draft Date
Dec. 16, 2004
Jun. 15, 2005
History
1. Deleted Manufacturer ID for ES
2. Excluded bit error case in Load operation
3. Revised tWEA value from max to min
4. Revised tRD1 typical value from 35us to 40us
5. Revised tRD2 typical value from 75us to 85us
6. Added technical note for OneNAND boot sequence
7. Revised Asycnchronous Read timing diagram for CE don’t care mode
8. Revised Asynchronous Write timing diagram for CE don’t care mode
9. Revised Load operation timing diagram for CE don’t care mode
1. Added Copyright Notice in the beginning
2. Corrected Errata
3. Updated Icc2, Icc4, Icc5, Icc6 and ISB
4. Revised INT pin description
5. Changed default of Manufacturer ID Register with 00ECh
6. Removed "or erase case, refer to the table 3" from descriptions of WB, EB
7. Added OTP erase case NOTE
8. Revised case definitions of Interrupt Status Register
9. Added a NOTE to Command register
10. Added ECClogSector Information table
11. Removed ’data unit based data handling’ from description of Device
Operation
12. Revised description on Warm/Hot/NAND Flash Core Reset
13. Revised Warm Reset Timing
14. Revised description for 4-, 8-, 16-, 32-Word Linear Burst Mode
15. Revised OTP operation description
16. Restored earlier text for OTP Programming
17. Added supplemental explanation for ECC Operation
18. Replaced "read" with "load" in ECC bypass
19. Removed redundant sentance from ECC Bypass Operation
20. Added technical note for INT pin connection guide
OneNAND512/OneNAND1GDDP FLASH MEMORY
6
1. FEATURES
Design Technology: 0.12um
Voltage Supply
- 1.8V device(KFG1216Q2M) : 1.7V~1.95V
- 2.65V device(KFG1216D2M) : 2.4V~2.9V
- 3.3V device(KFG1216U2M) : 2.7V~3.6V
Organization
- Host Interface:16bit
Internal BufferRAM(5K Bytes)
- 1KB for BootRAM, 4KB for DataRAM
NAND Array
- Page Size : (2K+64)bytes
- Block Size : (128K+4K)bytes
Architecture
Host Interface type
- Synchronous Burst Read
: Clock Frequency: up to 54MHz
: Linear Burst - 4, 8, 16, 32 words with wrap-around
: Continuous Sequential Burst(1K words)
- Asynchronous Random Read
: Access time of 76ns
- Asynchronous Random Write
Programmable Read latency
Multiple Sector Read
- Read multiple sectors by Sector Count Register(up to 4 sectors)
Reset Mode
- Cold Reset / Warm Reset / Hot Reset / NAND Flash Reset
Power dissipation (typical values)
- Standby current : 10uA@1.8V, 20uA@2.65V/3.3V for single, 20uA@1.8V, 40uA@2.65V/3.3V for DDP
- Synchronous Burst Read current(54MHz) : 12mA@1.8V device, 20mA@2.65V/3.3V device
- Load current : 20mA@1.8V device, 25mA@2.65V/3.3V device
- Program current: 20mA@1.8V device, 25mA@2.65V/3.3V device
- Erase current: 15mA@1.8V device, 20mA@2.65V/3.3V device
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Performance
Voltage detector generating internal reset signal from Vcc
Hardware reset input (RP)
Data Protection
- Write Protection for BootRAM
- Write Protection mode for NAND Flash Array
- Write protection during power-up
- Write protection during power-down
User-controlled One Time Programmable(OTP) area
Internal 2bit EDC / 1bit ECC
Internal Bootloader supports Booting Solution in system
Hardware Features
Handshaking Feature
- INT pin: Indicates Ready / Busy of OneNAND
- Polling method: Provides a software method of detecting the Ready / Busy status of OneNAND
Detailed chip information by ID register
Software Features
Package
- 63ball, 9.5mm x 12mm x max 1.0mmt , 0.8mm ball pitch FBGA
Packaging
OneNAND512/OneNAND1GDDP FLASH MEMORY
7
2. GENERAL DESCRIPTION
OneNAND is a single-die chip with standard NOR Flash interface using NAND Flash Array. This device is comprised of logic and
NAND Flash Array and 5KB internal BufferRAM. 1KB BootRAM is used for reserving bootcode, and 4KB DataRAM is used for buff-
ering data. The operating clock frequency is up to 54MHz. This device is X16 interface with Host, and has the speed of ~76ns random
access time. Actually, it is accessible with minimum 4clock latency(host-driven clock for synchronous read), but this device adopts the
appropriate wait cycles by programmable read latency. OneNAND provides the multiple sector read operation by assigning the num-
ber of sectors to be read in the sector counter register. The device includes one block sized OTP(One Time Programmable), which
can be used to increase system security or to provide identification capabilities.
OneNAND512/OneNAND1GDDP FLASH MEMORY
8
3. PIN DESCRIPTION
NOTE:
Do not leave power supply(VCC, VSS) disconnected.
Pin Name Type Nameand Description
Host Interface
A15~A0 I
Address Inputs
- Inputs for addresses during read operation, which are for addressing
BufferRAM & Register.
DQ15~DQ0 I/O
Data Inputs/Outputs
- Inputs data during program and commands during all operations, outputs data during memory array/
register read cycles.
Data pins float to high-impedance when the chip is deselected or outputs are disabled.
INT O
Interrupt
Notifying Host when a command has completed. It is open drain output with internal resistor(~50kohms).
After power-up, it is at hi-z condition. Once IOBE is set to 1, it does not float to hi-z condition even when
the chip is deselected or when outputs are disabled.
RDY O Ready
Indicates data valid in synchronous read modes and is activated while CE is low
CLK I
Clock
CLK synchronizes the device to the system bus frequency in synchronous read mode.
The first rising edge of CLK in conjunction with AVD low latches address input.
WE IWrite Enable
WE controls writes to the bufferRAM and registers. Datas are latched on the WE pulse’s rising edge
AVD I
Address Valid Detect
Indicates valid address presence on address inputs. During asynchronous read operation, all addresses
are latched on AVD’s rising edge, and during synchronous read operation, all addresses are latched on
CLK’s rising edge while AVD is held low for one clock cycle.
> Low : for asynchronous mode, indicates valid address ;for burst mode,
causes starting address to be latched on rising edge on CLK
> High : device ignores address inputs
RP I
Reset Pin
When low, RP resets internal operation of OneNAND. RP status is don’t care during power-up
and bootloading.
CE I
Chip Enable
CE-low activates internal control logic, and CE-high deselects the device, places it in standby state,
and places A/DQ in Hi-Z
OE IOutput Enable
OE-low enables the device’s output data buffers during a read cycle.
Power Supply
VCC-Core/Vcc Power for OneNAND Core
This is the power supply for OneNAND Core.
VCC-IO/Vccq
Power for OneNAND I/O
This is the power supply for OneNAND I/O
Vcc-IO is internally connected to Vcc-Core, thus should be connected to the same power supply.
VSS Ground for OneNAND
etc.
DNU Do Not Use
Leave it disconnected. These pins are used for testing.
NC No Connection
Lead is not internally connected.
OneNAND512/OneNAND1GDDP FLASH MEMORY
9
4. PIN CONFIGURATION
NC NC NC NC
INT A0 A1 NC A10 A6
NC NC NC
WE RP DQ14 VSS VSS DQ13
DQ12 DQ8 DQ1 OE DQ9 VCC
DQ7 DQ4 DQ11 DQ10 DQ3 VCC
DQ15 A12 DQ0 DQ5 DQ6
CE DQ2 NC NC A9
AVD A7 A11 A8
A4 A5 A2 A3 NC
NC NC NC NC
NC NC NC NC
Core
IO
CLK
(TOP VIEW, Balls Facing Down)
63ball FBGA OneNAND Chip
A15
A13
A14
RDY
63ball, 9.5mm x 12mm x max 1.0mmt , 0.8mm ball pitch FBGA
OneNAND512/OneNAND1GDDP FLASH MEMORY
10
DEFINITIONS
B (capital letter) Byte, 8bits
W (capital letter) Word, 16bits
b (lower-case letter) Bit
ECC Error Correction Code
Calculated ECC ECC which has been calculated during load or program access
Written ECC ECC which has been stored as data in the NAND Flash Array or in the BufferRAM
BufferRAM On-chip Internal Buffer consisting of BootRAM and DataRAM
BootRAM A 1KB portion of the BufferRAM reserved for Bootcode buffering
DataRAM A 4KB portion of the BufferRAM reserved for Data buffering
Memory NAND Flash array which is embedded on OneNAND
Sector
Partial unit of page, of which size is 512B for main area and 16B for spare area data.
It is the minimum Load/Program/Copy-Back program unit while one~four sector opera-
tion is available
Data unit
Possible data unit to be read from memory to BufferRAM or to be programmed to mem-
ory.
- 528B of which 512B is in main area and 16B in spare area
- 1056B of which 1024B is in main area and 32B in spare area
- 1584B of which 1536B is in main area and 48B in spare area
- 2112B of which 2048B is in main area and 64B in spare area
OneNAND512/OneNAND1GDDP FLASH MEMORY
11
5. BLOCK DIAGRAM
BootRAM
Host Interface
CLK
CE
OE
WE
RP
AVD
StateMachine
Bootloader
Internal Registers
(Address/Command/Configuration
/Status Registers)
Error
Correction
Logic
INT
- Host Interface
- BufferRAM(BootRAM, DataRAM)
- Command and status registers
- State Machine (Bootloader is included)
- Error Correction Logic
- Memory(NAND Flash Array, OTP)
NOTE:
1) At cold reset, bootloader copies boot code(1K byte size) from NAND Flash Array to BootRAM.
DataRAM
BufferRAM
NAND Flash
Array
OTP
(One Block)
RDY
Figure 1. Internal Block Diagram
A15~A0
DQ15~DQ0
OneNAND512/OneNAND1GDDP FLASH MEMORY
12
BootRAM 0
BootRAM 1
DataRAM 0_0
DataRAM 0_1
DataRAM 0_2
DataRAM 0_3
BootRAM Sector
DataRAM 0
DataRAM 1_0
DataRAM 1_1
DataRAM 1_2
DataRAM 1_3
DataRAM 1
{
Main area data
{
Spare area data
(512B) (16B)
{
Main area data
{
Spare area data
(512B) (16B)
(BufferRAM) (NAND array)
Main area
256W
Main area
256W
Main area
256W
Main area
256W
Spare
area
8W
Spare
area
8W
Spare
area
8W
Spare
area
8W
Figure 2. BufferRAM and NAND array structure
Figure 3. Spare area of NAND array assignment
Page:2KB+64B
Sector(main area):512B
Sector(spare area):16B
Block:
128KB+4KB
64pages
NOTE:
1) The 1st word of spare area in 1st and 2nd page of every invalid block is reserved for the invalid block information by manufacturer.
Please refer to page 64 about the details.
2) These words are managed by internal ECC logic. So it is recommended that the important data like LSN(Logical Sector Number)
are written.
3) These words are reserved for the future purpose by manufacturer. These words will be dedicated to internal logic.
4) These words are for free usage.
5) The 5th, 6th and 7th words are dedicated to internal ECC logic. So these words are only readable. The other words are program-
mable by command.
6) ECCm 1st, ECCm 2nd, ECCm 3rd: ECC code for Main area data
7) ECCs 1st, ECCs 2nd: ECC code for 2nd and 3rd word of spare area.
{
1st W
ECCm
1st
ECCm
2nd
ECCm
3rd
ECCs
1st
ECCs
2nd
LSB MSB
LSB MSB
{
2nd W
LSB MSB
{
3rd W
LSB MSB
{
4th W
LSB MSB
{
5th W
LSB MSB
{
6th W
LSB MSB
{
7th W
LSB MSB
{
8th W
LSB MSB
FFh
Note1 Note1 Note2 Note2 Note2 Note3 Note3 Note3 Note4 Note4
(Note3)
OneNAND512/OneNAND1GDDP FLASH MEMORY
13
6.1 ADDRESS MAP For OneNAND
NOTE 1) Data output is unknown while host reads a register bit of reserved area
Division Address
(word order)
Address
(byte order)
Size
(total 128KB) Usage Description
Main area
(64KB)
0000h~00FFh 00000h~001FEh 512B 1KB BootM 0 BootRAM Main sector0
0100h~01FFh 00200h~003FEh 512B BootM 1 BootRAM Main sector1
0200h~02FFh 00400h~005FEh 512B
4KB
DataM 0_0 DataRAM Main page0/sector0
0300h~03FFh 00600h~007FEh 512B DataM 0_1 DataRAM Main page0/sector1
0400h~04FFh 00800h~009FEh 512B DataM 0_2 DataRAM Main page0/sector2
0500h~05FFh 00A00h~00BFEh 512B DataM 0_3 DataRAM Main page0/sector3
0600h~06FFh 00C00h~00DFEh 512B DataM 1_0 DataRAM Main page1/sector0
0700h~07FFh 00E00h~00FFEh 512B DataM 1_1 DataRAM Main page1/sector1
0800h~08FFh 01000h~011FEh 512B DataM 1_2 DataRAM Main page1/sector2
0900h~09FFh 01200h~013FEh 512B DataM 1_3 DataRAM Main page1/sector3
0A00h~7FFFh 01400h~0FFFEh 59KB 59KB Reserved Reserved
Spare area
(8KB)
8000h~8007h 10000h~1000Eh 16B 32B BootS 0 BootRAM Spare sector0
8008h~800Fh 10010h~1001Eh 16B BootS 1 BootRAM Spare sector1
8010h~8017h 10020h~1002Eh 16B
128B
DataS 0_0 DataRAM Spare page0/sector0
8018h~801Fh 10030h~1003Eh 16B DataS 0_1 DataRAM Spare page0/sector1
8020h~8027h 10040h~1004Eh 16B DataS 0_2 DataRAM Spare page0/sector2
8028h~802Fh 10050h~1005Eh 16B DataS 0_3 DataRAM Spare page0/sector3
8030h~8037h 10060h~1006Eh 16B DataS 1_0 DataRAM Spare page1/sector0
8038h~803Fh 10070h~1007Eh 16B DataS 1_1 DataRAM Spare page1/sector1
8040h~8047h 10080h~1008Eh 16B DataS 1_2 DataRAM Spare page1/sector2
8048h~804Fh 10090h~1009Eh 16B DataS 1_3 DataRAM Spare page1/sector3
8050h~8FFFh 100A0h~11FFEh 8032B 8032B Reserved Reserved
Reserved
(24KB) 9000h~BFFFh 12000h~17FFEh 24KB 24KB Reserved Reserved
Reserved
(8KB) C000h~CFFFh 18000h~19FFEh 8KB 8KB Reserved Reserved
Reserved
(16KB) D000h~EFFFh 1A000h~1DFFEh 16KB 16KB Reserved Reserved
Registers
(8KB) F000h~FFFFh 1E000h~1FFFEh 8KB 8KB Registers Registers
OneNAND512/OneNAND1GDDP FLASH MEMORY
14
6.2 ADDRESS MAP For OneNAND NAND Array (word order)
Block Block Address Page and Sector
Address Size Block Block Address Page and Sector
Address Size
Block0 0000h 0000h~00FFh 128KB Block32 0020h 0000h~00FFh 128KB
Block1 0001h 0000h~00FFh 128KB Block33 0021h 0000h~00FFh 128KB
Block2 0002h 0000h~00FFh 128KB Block34 0022h 0000h~00FFh 128KB
Block3 0003h 0000h~00FFh 128KB Block35 0023h 0000h~00FFh 128KB
Block4 0004h 0000h~00FFh 128KB Block36 0024h 0000h~00FFh 128KB
Block5 0005h 0000h~00FFh 128KB Block37 0025h 0000h~00FFh 128KB
Block6 0006h 0000h~00FFh 128KB Block38 0026h 0000h~00FFh 128KB
Block7 0007h 0000h~00FFh 128KB Block39 0027h 0000h~00FFh 128KB
Block8 0008h 0000h~00FFh 128KB Block40 0028h 0000h~00FFh 128KB
Block9 0009h 0000h~00FFh 128KB Block41 0029h 0000h~00FFh 128KB
Block10 000Ah 0000h~00FFh 128KB Block42 002Ah 0000h~00FFh 128KB
Block11 000Bh 0000h~00FFh 128KB Block43 002Bh 0000h~00FFh 128KB
Block12 000Ch 0000h~00FFh 128KB Block44 002Ch 0000h~00FFh 128KB
Block13 000Dh 0000h~00FFh 128KB Block45 002Dh 0000h~00FFh 128KB
Block14 000Eh 0000h~00FFh 128KB Block46 002Eh 0000h~00FFh 128KB
Block15 000Fh 0000h~00FFh 128KB Block47 002Fh 0000h~00FFh 128KB
Block16 0010h 0000h~00FFh 128KB Block48 0030h 0000h~00FFh 128KB
Block17 0011h 0000h~00FFh 128KB Block49 0031h 0000h~00FFh 128KB
Block18 0012h 0000h~00FFh 128KB Block50 0032h 0000h~00FFh 128KB
Block19 0013h 0000h~00FFh 128KB Block51 0033h 0000h~00FFh 128KB
Block20 0014h 0000h~00FFh 128KB Block52 0034h 0000h~00FFh 128KB
Block21 0015h 0000h~00FFh 128KB Block53 0035h 0000h~00FFh 128KB
Block22 0016h 0000h~00FFh 128KB Block54 0036h 0000h~00FFh 128KB
Block23 0017h 0000h~00FFh 128KB Block55 0037h 0000h~00FFh 128KB
Block24 0018h 0000h~00FFh 128KB Block56 0038h 0000h~00FFh 128KB
Block25 0019h 0000h~00FFh 128KB Block57 0039h 0000h~00FFh 128KB
Block26 001Ah 0000h~00FFh 128KB Block58 003Ah 0000h~00FFh 128KB
Block27 001Bh 0000h~00FFh 128KB Block59 003Bh 0000h~00FFh 128KB
Block28 001Ch 0000h~00FFh 128KB Block60 003Ch 0000h~00FFh 128KB
Block29 001Dh 0000h~00FFh 128KB Block61 003Dh 0000h~00FFh 128KB
Block30 001Eh 0000h~00FFh 128KB Block62 003Eh 0000h~00FFh 128KB
Block31 001Fh 0000h~00FFh 128KB Block63 003Fh 0000h~00FFh 128KB
OneNAND512/OneNAND1GDDP FLASH MEMORY
15
Block Block Address Page and Sector
Address Size Block Block Address Page and Sector
Address Size
Block64 0040h 0000h~00FFh 128KB Block96 0060h 0000h~00FFh 128KB
Block65 0041h 0000h~00FFh 128KB Block97 0061h 0000h~00FFh 128KB
Block66 0042h 0000h~00FFh 128KB Block98 0062h 0000h~00FFh 128KB
Block67 0043h 0000h~00FFh 128KB Block99 0063h 0000h~00FFh 128KB
Block68 0044h 0000h~00FFh 128KB Block100 0064h 0000h~00FFh 128KB
Block69 0045h 0000h~00FFh 128KB Block101 0065h 0000h~00FFh 128KB
Block70 0046h 0000h~00FFh 128KB Block102 0066h 0000h~00FFh 128KB
Block71 0047h 0000h~00FFh 128KB Block103 0067h 0000h~00FFh 128KB
Block72 0048h 0000h~00FFh 128KB Block104 0068h 0000h~00FFh 128KB
Block73 0049h 0000h~00FFh 128KB Block105 0069h 0000h~00FFh 128KB
Block74 004Ah 0000h~00FFh 128KB Block106 006Ah 0000h~00FFh 128KB
Block75 004Bh 0000h~00FFh 128KB Block107 006Bh 0000h~00FFh 128KB
Block76 004Ch 0000h~00FFh 128KB Block108 006Ch 0000h~00FFh 128KB
Block77 004Dh 0000h~00FFh 128KB Block109 006Dh 0000h~00FFh 128KB
Block78 004Eh 0000h~00FFh 128KB Block110 006Eh 0000h~00FFh 128KB
Block79 004Fh 0000h~00FFh 128KB Block111 006Fh 0000h~00FFh 128KB
Block80 0050h 0000h~00FFh 128KB Block112 0070h 0000h~00FFh 128KB
Block81 0051h 0000h~00FFh 128KB Block113 0071h 0000h~00FFh 128KB
Block82 0052h 0000h~00FFh 128KB Block114 0072h 0000h~00FFh 128KB
Block83 0053h 0000h~00FFh 128KB Block115 0073h 0000h~00FFh 128KB
Block84 0054h 0000h~00FFh 128KB Block116 0074h 0000h~00FFh 128KB
Block85 0055h 0000h~00FFh 128KB Block117 0075h 0000h~00FFh 128KB
Block86 0056h 0000h~00FFh 128KB Block118 0076h 0000h~00FFh 128KB
Block87 0057h 0000h~00FFh 128KB Block119 0077h 0000h~00FFh 128KB
Block88 0058h 0000h~00FFh 128KB Block120 0078h 0000h~00FFh 128KB
Block89 0059h 0000h~00FFh 128KB Block121 0079h 0000h~00FFh 128KB
Block90 005Ah 0000h~00FFh 128KB Block122 007Ah 0000h~00FFh 128KB
Block91 005Bh 0000h~00FFh 128KB Block123 007Bh 0000h~00FFh 128KB
Block92 005Ch 0000h~00FFh 128KB Block124 007Ch 0000h~00FFh 128KB
Block93 005Dh 0000h~00FFh 128KB Block125 007Dh 0000h~00FFh 128KB
Block94 005Eh 0000h~00FFh 128KB Block126 007Eh 0000h~00FFh 128KB
Block95 005Fh 0000h~00FFh 128KB Block127 007Fh 0000h~00FFh 128KB
OneNAND512/OneNAND1GDDP FLASH MEMORY
16
Block Block Address Page and Sector
Address Size Block Block Address Page and Sector
Address Size
Block128 0080h 0000h~00FFh 128KB Block160 00A0h 0000h~00FFh 128KB
Block129 0081h 0000h~00FFh 128KB Block161 00A1h 0000h~00FFh 128KB
Block130 0082h 0000h~00FFh 128KB Block162 00A2h 0000h~00FFh 128KB
Block131 0083h 0000h~00FFh 128KB Block163 00A3h 0000h~00FFh 128KB
Block132 0084h 0000h~00FFh 128KB Block164 00A4h 0000h~00FFh 128KB
Block133 0085h 0000h~00FFh 128KB Block165 00A5h 0000h~00FFh 128KB
Block134 0086h 0000h~00FFh 128KB Block166 00A6h 0000h~00FFh 128KB
Block135 0087h 0000h~00FFh 128KB Block167 00A7h 0000h~00FFh 128KB
Block136 0088h 0000h~00FFh 128KB Block168 00A8h 0000h~00FFh 128KB
Block137 0089h 0000h~00FFh 128KB Block169 00A9h 0000h~00FFh 128KB
Block138 008Ah 0000h~00FFh 128KB Block170 00AAh 0000h~00FFh 128KB
Block139 008Bh 0000h~00FFh 128KB Block171 00ABh 0000h~00FFh 128KB
Block140 008Ch 0000h~00FFh 128KB Block172 00ACh 0000h~00FFh 128KB
Block141 008Dh 0000h~00FFh 128KB Block173 00ADh 0000h~00FFh 128KB
Block142 008Eh 0000h~00FFh 128KB Block174 00AEh 0000h~00FFh 128KB
Block143 008Fh 0000h~00FFh 128KB Block175 00AFh 0000h~00FFh 128KB
Block144 0090h 0000h~00FFh 128KB Block176 00B0h 0000h~00FFh 128KB
Block145 0091h 0000h~00FFh 128KB Block177 00B1h 0000h~00FFh 128KB
Block146 0092h 0000h~00FFh 128KB Block178 00B2h 0000h~00FFh 128KB
Block147 0093h 0000h~00FFh 128KB Block179 00B3h 0000h~00FFh 128KB
Block148 0094h 0000h~00FFh 128KB Block180 00B4h 0000h~00FFh 128KB
Block149 0095h 0000h~00FFh 128KB Block181 00B5h 0000h~00FFh 128KB
Block150 0096h 0000h~00FFh 128KB Block182 00B6h 0000h~00FFh 128KB
Block151 0097h 0000h~00FFh 128KB Block183 00B7h 0000h~00FFh 128KB
Block152 0098h 0000h~00FFh 128KB Block184 00B8h 0000h~00FFh 128KB
Block153 0099h 0000h~00FFh 128KB Block185 00B9h 0000h~00FFh 128KB
Block154 009Ah 0000h~00FFh 128KB Block186 00BAh 0000h~00FFh 128KB
Block155 009Bh 0000h~00FFh 128KB Block187 00BBh 0000h~00FFh 128KB
Block156 009Ch 0000h~00FFh 128KB Block188 00BCh 0000h~00FFh 128KB
Block157 009Dh 0000h~00FFh 128KB Block189 00BDh 0000h~00FFh 128KB
Block158 009Eh 0000h~00FFh 128KB Block190 00BEh 0000h~00FFh 128KB
Block159 009Fh 0000h~00FFh 128KB Block191 00BFh 0000h~00FFh 128KB
OneNAND512/OneNAND1GDDP FLASH MEMORY
17
Block Block Address Page and Sector
Address Size Block Block Address Page and Sector
Address Size
Block192 00C0h 0000h~00FFh 128KB Block224 00E0h 0000h~00FFh 128KB
Block193 00C1h 0000h~00FFh 128KB Block225 00E1h 0000h~00FFh 128KB
Block194 00C2h 0000h~00FFh 128KB Block226 00E2h 0000h~00FFh 128KB
Block195 00C3h 0000h~00FFh 128KB Block227 00E3h 0000h~00FFh 128KB
Block196 00C4h 0000h~00FFh 128KB Block228 00E4h 0000h~00FFh 128KB
Block197 00C5h 0000h~00FFh 128KB Block229 00E5h 0000h~00FFh 128KB
Block198 00C6h 0000h~00FFh 128KB Block230 00E6h 0000h~00FFh 128KB
Block199 00C7h 0000h~00FFh 128KB Block231 00E7h 0000h~00FFh 128KB
Block200 00C8h 0000h~00FFh 128KB Block232 00E8h 0000h~00FFh 128KB
Block201 00C9h 0000h~00FFh 128KB Block233 00E9h 0000h~00FFh 128KB
Block202 00CAh 0000h~00FFh 128KB Block234 00EAh 0000h~00FFh 128KB
Block203 00CBh 0000h~00FFh 128KB Block235 00EBh 0000h~00FFh 128KB
Block204 00CCh 0000h~00FFh 128KB Block236 00ECh 0000h~00FFh 128KB
Block205 00CDh 0000h~00FFh 128KB Block237 00EDh 0000h~00FFh 128KB
Block206 00CEh 0000h~00FFh 128KB Block238 00EEh 0000h~00FFh 128KB
Block207 00CFh 0000h~00FFh 128KB Block239 00EFh 0000h~00FFh 128KB
Block208 00D0h 0000h~00FFh 128KB Block240 00F0h 0000h~00FFh 128KB
Block209 00D1h 0000h~00FFh 128KB Block241 00F1h 0000h~00FFh 128KB
Block210 00D2h 0000h~00FFh 128KB Block242 00F2h 0000h~00FFh 128KB
Block211 00D3h 0000h~00FFh 128KB Block243 00F3h 0000h~00FFh 128KB
Block212 00D4h 0000h~00FFh 128KB Block244 00F4h 0000h~00FFh 128KB
Block213 00D5h 0000h~00FFh 128KB Block245 00F5h 0000h~00FFh 128KB
Block214 00D6h 0000h~00FFh 128KB Block246 00F6h 0000h~00FFh 128KB
Block215 00D7h 0000h~00FFh 128KB Block247 00F7h 0000h~00FFh 128KB
Block216 00D8h 0000h~00FFh 128KB Block248 00F8h 0000h~00FFh 128KB
Block217 00D9h 0000h~00FFh 128KB Block249 00F9h 0000h~00FFh 128KB
Block218 00DAh 0000h~00FFh 128KB Block250 00FAh 0000h~00FFh 128KB
Block219 00DBh 0000h~00FFh 128KB Block251 00FBh 0000h~00FFh 128KB
Block220 00DCh 0000h~00FFh 128KB Block252 00FCh 0000h~00FFh 128KB
Block221 00DDh 0000h~00FFh 128KB Block253 00FDh 0000h~00FFh 128KB
Block222 00DEh 0000h~00FFh 128KB Block254 00FEh 0000h~00FFh 128KB
Block223 00DFh 0000h~00FFh 128KB Block255 00FFh 0000h~00FFh 128KB
OneNAND512/OneNAND1GDDP FLASH MEMORY
18
Block Block Address Page and Sector
Address Size Block Block Address Page and Sector
Address Size
Block256 0100h 0000h~00FFh 128KB Block288 0120h 0000h~00FFh 128KB
Block257 0101h 0000h~00FFh 128KB Block289 0121h 0000h~00FFh 128KB
Block258 0102h 0000h~00FFh 128KB Block290 0122h 0000h~00FFh 128KB
Block259 0103h 0000h~00FFh 128KB Block291 0123h 0000h~00FFh 128KB
Block260 0104h 0000h~00FFh 128KB Block292 0124h 0000h~00FFh 128KB
Block261 0105h 0000h~00FFh 128KB Block293 0125h 0000h~00FFh 128KB
Block262 0106h 0000h~00FFh 128KB Block294 0126h 0000h~00FFh 128KB
Block263 0107h 0000h~00FFh 128KB Block295 0127h 0000h~00FFh 128KB
Block264 0108h 0000h~00FFh 128KB Block296 0128h 0000h~00FFh 128KB
Block265 0109h 0000h~00FFh 128KB Block297 0129h 0000h~00FFh 128KB
Block266 010Ah 0000h~00FFh 128KB Block298 012Ah 0000h~00FFh 128KB
Block267 010Bh 0000h~00FFh 128KB Block299 012Bh 0000h~00FFh 128KB
Block268 010Ch 0000h~00FFh 128KB Block300 012Ch 0000h~00FFh 128KB
Block269 010Dh 0000h~00FFh 128KB Block301 012Dh 0000h~00FFh 128KB
Block270 010Eh 0000h~00FFh 128KB Block302 012Eh 0000h~00FFh 128KB
Block271 010Fh 0000h~00FFh 128KB Block303 012Fh 0000h~00FFh 128KB
Block272 0110h 0000h~00FFh 128KB Block304 0130h 0000h~00FFh 128KB
Block273 0111h 0000h~00FFh 128KB Block305 0131h 0000h~00FFh 128KB
Block274 0112h 0000h~00FFh 128KB Block306 0132h 0000h~00FFh 128KB
Block275 0113h 0000h~00FFh 128KB Block307 0133h 0000h~00FFh 128KB
Block276 0114h 0000h~00FFh 128KB Block308 0134h 0000h~00FFh 128KB
Block277 0115h 0000h~00FFh 128KB Block309 0135h 0000h~00FFh 128KB
Block278 0116h 0000h~00FFh 128KB Block310 0136h 0000h~00FFh 128KB
Block279 0117h 0000h~00FFh 128KB Block311 0137h 0000h~00FFh 128KB
Block280 0118h 0000h~00FFh 128KB Block312 0138h 0000h~00FFh 128KB
Block281 0119h 0000h~00FFh 128KB Block313 0139h 0000h~00FFh 128KB
Block282 011Ah 0000h~00FFh 128KB Block314 013Ah 0000h~00FFh 128KB
Block283 011Bh 0000h~00FFh 128KB Block315 013Bh 0000h~00FFh 128KB
Block284 011Ch 0000h~00FFh 128KB Block316 013Ch 0000h~00FFh 128KB
Block285 011Dh 0000h~00FFh 128KB Block317 013Dh 0000h~00FFh 128KB
Block286 011Eh 0000h~00FFh 128KB Block318 013Eh 0000h~00FFh 128KB
Block287 011Fh 0000h~00FFh 128KB Block319 013Fh 0000h~00FFh 128KB
OneNAND512/OneNAND1GDDP FLASH MEMORY
19
Block Block Address Page and Sector
Address Size Block Block Address Page and Sector
Address Size
Block320 0140h 0000h~00FFh 128KB Block352 0160h 0000h~00FFh 128KB
Block321 0141h 0000h~00FFh 128KB Block353 0161h 0000h~00FFh 128KB
Block322 0142h 0000h~00FFh 128KB Block354 0162h 0000h~00FFh 128KB
Block323 0143h 0000h~00FFh 128KB Block355 0163h 0000h~00FFh 128KB
Block324 0144h 0000h~00FFh 128KB Block356 0164h 0000h~00FFh 128KB
Block325 0145h 0000h~00FFh 128KB Block357 0165h 0000h~00FFh 128KB
Block326 0146h 0000h~00FFh 128KB Block358 0166h 0000h~00FFh 128KB
Block327 0147h 0000h~00FFh 128KB Block359 0167h 0000h~00FFh 128KB
Block328 0148h 0000h~00FFh 128KB Block360 0168h 0000h~00FFh 128KB
Block329 0149h 0000h~00FFh 128KB Block361 0169h 0000h~00FFh 128KB
Block330 014Ah 0000h~00FFh 128KB Block362 016Ah 0000h~00FFh 128KB
Block331 014Bh 0000h~00FFh 128KB Block363 016Bh 0000h~00FFh 128KB
Block332 014Ch 0000h~00FFh 128KB Block364 016Ch 0000h~00FFh 128KB
Block333 014Dh 0000h~00FFh 128KB Block365 016Dh 0000h~00FFh 128KB
Block334 014Eh 0000h~00FFh 128KB Block366 016Eh 0000h~00FFh 128KB
Block335 014Fh 0000h~00FFh 128KB Block367 016Fh 0000h~00FFh 128KB
Block336 0150h 0000h~00FFh 128KB Block368 0170h 0000h~00FFh 128KB
Block337 0151h 0000h~00FFh 128KB Block369 0171h 0000h~00FFh 128KB
Block338 0152h 0000h~00FFh 128KB Block370 0172h 0000h~00FFh 128KB
Block339 0153h 0000h~00FFh 128KB Block371 0173h 0000h~00FFh 128KB
Block340 0154h 0000h~00FFh 128KB Block372 0174h 0000h~00FFh 128KB
Block341 0155h 0000h~00FFh 128KB Block373 0175h 0000h~00FFh 128KB
Block342 0156h 0000h~00FFh 128KB Block374 0176h 0000h~00FFh 128KB
Block343 0157h 0000h~00FFh 128KB Block375 0177h 0000h~00FFh 128KB
Block344 0158h 0000h~00FFh 128KB Block376 0178h 0000h~00FFh 128KB
Block345 0159h 0000h~00FFh 128KB Block377 0179h 0000h~00FFh 128KB
Block346 015Ah 0000h~00FFh 128KB Block378 017Ah 0000h~00FFh 128KB
Block347 015Bh 0000h~00FFh 128KB Block379 017Bh 0000h~00FFh 128KB
Block348 015Ch 0000h~00FFh 128KB Block380 017Ch 0000h~00FFh 128KB
Block349 015Dh 0000h~00FFh 128KB Block381 017Dh 0000h~00FFh 128KB
Block350 015Eh 0000h~00FFh 128KB Block382 017Eh 0000h~00FFh 128KB
Block351 015Fh 0000h~00FFh 128KB Block383 017Fh 0000h~00FFh 128KB
OneNAND512/OneNAND1GDDP FLASH MEMORY
20
Block Block Address Page and Sector
Address Size Block Block Address Page and Sector
Address Size
Block384 0180h 0000h~00FFh 128KB Block416 01A0h 0000h~00FFh 128KB
Block385 0181h 0000h~00FFh 128KB Block417 01A1h 0000h~00FFh 128KB
Block386 0182h 0000h~00FFh 128KB Block418 01A2h 0000h~00FFh 128KB
Block387 0183h 0000h~00FFh 128KB Block419 01A3h 0000h~00FFh 128KB
Block388 0184h 0000h~00FFh 128KB Block420 01A4h 0000h~00FFh 128KB
Block389 0185h 0000h~00FFh 128KB Block421 01A5h 0000h~00FFh 128KB
Block390 0186h 0000h~00FFh 128KB Block422 01A6h 0000h~00FFh 128KB
Block391 0187h 0000h~00FFh 128KB Block423 01A7h 0000h~00FFh 128KB
Block392 0188h 0000h~00FFh 128KB Block424 01A8h 0000h~00FFh 128KB
Block393 0189h 0000h~00FFh 128KB Block425 01A9h 0000h~00FFh 128KB
Block394 018Ah 0000h~00FFh 128KB Block426 01AAh 0000h~00FFh 128KB
Block395 018Bh 0000h~00FFh 128KB Block427 01ABh 0000h~00FFh 128KB
Block396 018Ch 0000h~00FFh 128KB Block428 01ACh 0000h~00FFh 128KB
Block397 018Dh 0000h~00FFh 128KB Block429 01ADh 0000h~00FFh 128KB
Block398 018Eh 0000h~00FFh 128KB Block430 01AEh 0000h~00FFh 128KB
Block399 018Fh 0000h~00FFh 128KB Block431 01AFh 0000h~00FFh 128KB
Block400 0190h 0000h~00FFh 128KB Block432 01B0h 0000h~00FFh 128KB
Block401 0191h 0000h~00FFh 128KB Block433 01B1h 0000h~00FFh 128KB
Block402 0192h 0000h~00FFh 128KB Block434 01B2h 0000h~00FFh 128KB
Block403 0193h 0000h~00FFh 128KB Block435 01B3h 0000h~00FFh 128KB
Block404 0194h 0000h~00FFh 128KB Block436 01B4h 0000h~00FFh 128KB
Block405 0195h 0000h~00FFh 128KB Block437 01B5h 0000h~00FFh 128KB
Block406 0196h 0000h~00FFh 128KB Block438 01B6h 0000h~00FFh 128KB
Block407 0197h 0000h~00FFh 128KB Block439 01B7h 0000h~00FFh 128KB
Block408 0198h 0000h~00FFh 128KB Block440 01B8h 0000h~00FFh 128KB
Block409 0199h 0000h~00FFh 128KB Block441 01B9h 0000h~00FFh 128KB
Block410 019Ah 0000h~00FFh 128KB Block442 01BAh 0000h~00FFh 128KB
Block411 019Bh 0000h~00FFh 128KB Block443 01BBh 0000h~00FFh 128KB
Block412 019Ch 0000h~00FFh 128KB Block444 01BCh 0000h~00FFh 128KB
Block413 019Dh 0000h~00FFh 128KB Block445 01BDh 0000h~00FFh 128KB
Block414 019Eh 0000h~00FFh 128KB Block446 01BEh 0000h~00FFh 128KB
Block415 019Fh 0000h~00FFh 128KB Block447 01BFh 0000h~00FFh 128KB
OneNAND512/OneNAND1GDDP FLASH MEMORY
21
Block Block Address Page and Sector
Address Size Block Block Address Page and Sector
Address Size
Block448 01C0h 0000h~00FFh 128KB Block480 01E0h 0000h~00FFh 128KB
Block449 01C1h 0000h~00FFh 128KB Block481 01E1h 0000h~00FFh 128KB
Block450 01C2h 0000h~00FFh 128KB Block482 01E2h 0000h~00FFh 128KB
Block451 01C3h 0000h~00FFh 128KB Block483 01E3h 0000h~00FFh 128KB
Block452 01C4h 0000h~00FFh 128KB Block484 01E4h 0000h~00FFh 128KB
Block453 01C5h 0000h~00FFh 128KB Block485 01E5h 0000h~00FFh 128KB
Block454 01C6h 0000h~00FFh 128KB Block486 01E6h 0000h~00FFh 128KB
Block455 01C7h 0000h~00FFh 128KB Block487 01E7h 0000h~00FFh 128KB
Block456 01C8h 0000h~00FFh 128KB Block488 01E8h 0000h~00FFh 128KB
Block457 01C9h 0000h~00FFh 128KB Block489 01E9h 0000h~00FFh 128KB
Block458 01CAh 0000h~00FFh 128KB Block490 01EAh 0000h~00FFh 128KB
Block459 01CBh 0000h~00FFh 128KB Block491 01EBh 0000h~00FFh 128KB
Block460 01CCh 0000h~00FFh 128KB Block492 01ECh 0000h~00FFh 128KB
Block461 01CDh 0000h~00FFh 128KB Block493 01EDh 0000h~00FFh 128KB
Block462 01CEh 0000h~00FFh 128KB Block494 01EEh 0000h~00FFh 128KB
Block463 01CFh 0000h~00FFh 128KB Block495 01EFh 0000h~00FFh 128KB
Block464 01D0h 0000h~00FFh 128KB Block496 01F0h 0000h~00FFh 128KB
Block465 01D1h 0000h~00FFh 128KB Block497 01F1h 0000h~00FFh 128KB
Block466 01D2h 0000h~00FFh 128KB Block498 01F2h 0000h~00FFh 128KB
Block467 01D3h 0000h~00FFh 128KB Block499 01F3h 0000h~00FFh 128KB
Block468 01D4h 0000h~00FFh 128KB Block500 01F4h 0000h~00FFh 128KB
Block469 01D5h 0000h~00FFh 128KB Block501 01F5h 0000h~00FFh 128KB
Block470 01D6h 0000h~00FFh 128KB Block502 01F6h 0000h~00FFh 128KB
Block471 01D7h 0000h~00FFh 128KB Block503 01F7h 0000h~00FFh 128KB
Block472 01D8h 0000h~00FFh 128KB Block504 01F8h 0000h~00FFh 128KB
Block473 01D9h 0000h~00FFh 128KB Block505 01F9h 0000h~00FFh 128KB
Block474 01DAh 0000h~00FFh 128KB Block506 01FAh 0000h~00FFh 128KB
Block475 01DBh 0000h~00FFh 128KB Block507 01FBh 0000h~00FFh 128KB
Block476 01DCh 0000h~00FFh 128KB Block508 01FCh 0000h~00FFh 128KB
Block477 01DDh 0000h~00FFh 128KB Block509 01FDh 0000h~00FFh 128KB
Block478 01DEh 0000h~00FFh 128KB Block510 01FEh 0000h~00FFh 128KB
Block479 01DFh 0000h~00FFh 128KB Block511 01FFh 0000h~00FFh 128KB
OneNAND512/OneNAND1GDDP FLASH MEMORY
22
Detailed information of Address Map (word order)
-0000h~01FFh: 2(sector) x 512byte(NAND main area) = 1KB
0000h~00FFh(512B)
BootM 0
(sector 0 of page 0)
0100h~01FFh(512B)
BootM 1
(sector 1 of page 0)
BootRAM(Main area)
-0200h~09FFh: 8(sector) x 512byte(NAND main area) = 4KB
0200h~02FFh(512B)
DataM 0_0
(sector 0 of page 0)
0300h~03FFh(512B)
DataM 0_1
(sector 1 of page 0)
0400h~04FFh(512B)
DataM 0_2
(sector 2 of page 0)
0500h~05FFh(512B)
DataM 0_3
(sector 3 of page 0)
0600h~06FFh(512B)
DataM 1_0
(sector 0 of page 1)
0700h~07FFh(512B)
DataM 1_1
(sector 1 of page 1)
0800h~08FFh(512B)
DataM 1_2
(sector 2 of page 1)
0900h~09FFh(512B)
DataM 1_3
(sector 3 of page 1)
DataRAM(Main area)
-8000h~800Fh: 2(sector) x 16byte(NAND spare area) = 32B
8000h~8007h(16B)
BootS 0
(sector 0 of page 0)
8008h~800Fh(16B)
BootS 1
(sector 1 of page 0)
BootRAM(Spare area)
-8010h~804Fh: 8(sector) x 16byte(NAND spare area) = 128B
*NAND Flash array consists of 2KB page size and 128KB block size.
8010h~8017h(16B)
DataS 0_0
(sector 0 of page 0)
8018h~801Fh(16B)
DataS 0_1
(sector 1 of page 0)
8020h~8027h(16B)
DataS 0_2
(sector 2 of page 0)
8028h~802Fh(16B)
DataS 0_3
(sector 3 of page 0)
8030h~8037h(16B)
DataS 1_0
(sector 0 of page 1)
8038h~803Fh(16B)
DataS 1_1
(sector 1 of page 1)
8040h~8047h(16B)
DataS 1_2
(sector 2 of page 1)
8048h~804Fh(16B)
DataS 1_3
(sector 3 of page 1)
DataRAM(Spare area)
OneNAND512/OneNAND1GDDP FLASH MEMORY
23
Spare area assignment
Buf. Word
Address
Byte
Address F E D C B A 9 8 7 6 5 4 3 2 1 0
BootS 0 8000h 10000h BI
8001h 10002h Managed by Internal ECC logic
8002h 10004h Reserved for the future use Managed by Internal ECC logic
8003h 10006h Reserved for the current and future use
8004h 10008h ECC Code for Main area data (2nd) ECC Code for Main area data (1st)
8005h 1000Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd)
8006h 1000Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd)
8007h 1000Eh Free Usage
BootS 1 8008h 10010h BI
8009h 10012h Managed by Internal ECC logic
800Ah 10014h Reserved for the future use Managed by Internal ECC logic
800Bh 10016h Reserved for the current and future use
800Ch 10018h ECC Code for Main area data (2nd) ECC Code for Main area data (1st)
800Dh 1001Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd)
800Eh 1001Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd)
800Fh 1001Eh Free Usage
DataS
0_0
8010h 10020h BI
8011h 10022h Managed by Internal ECC logic
8012h 10024h Reserved for the future use Managed by Internal ECC logic
8013h 10026h Reserved for the current and future use
8014h 10028h ECC Code for Main area data (2nd) ECC Code for Main area data (1st)
8015h 1002Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd)
8016h 1002Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd)
8017h 1002Eh Free Usage
DataS
0_1
8018h 10030h BI
8019h 10032h Managed by Internal ECC logic
801Ah 10034h Reserved for the future use Managed by Internal ECC logic
801Bh 10036h Reserved for the current and future use
801Ch 10038h ECC Code for Main area data (2nd) ECC Code for Main area data (1st)
801Dh 1003Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd)
801Eh 1003Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd)
801Fh 1003Eh Free Usage
Equivalent to 1word of NAND Flash
OneNAND512/OneNAND1GDDP FLASH MEMORY
24
Buf. Word
Address
Byte
Address F E D C B A 9 8 7 6 5 4 3 2 1 0
DataS 0_2 8020h 10040h BI
8021h 10042h Managed by Internal ECC logic
8022h 10044h Reserved for the future use Managed by Internal ECC logic
8023h 10046h Reserved for the current and future use
8024h 10048h ECC Code for Main area data (2nd) ECC Code for Main area data (1st)
8025h 1004Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd)
8026h 1004Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd)
8027h 1004Eh Free Usage
DataS 0_3 8028h 10050h BI
8029h 10052h Managed by Internal ECC logic
802Ah 10054h Reserved for the future use Managed by Internal ECC logic
802Bh 10056h Reserved for the current and future use
802Ch 10058h ECC Code for Main area data (2nd) ECC Code for Main area data (1st)
802Dh 1005Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd)
802Eh 1005Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd)
802Fh 1005Eh Free Usage
DataS 1_0 8030h 10060h BI
8031h 10062h Managed by Internal ECC logic
8032h 10064h Reserved for the future use Managed by Internal ECC logic
8033h 10066h Reserved for the current and future use
8034h 10068h ECC Code for Main area data (2nd) ECC Code for Main area data (1st)
8035h 1006Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd)
8036h 1006Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd)
8037h 1006Eh Free Usage
DataS 1_1 8038h 10070h BI
8039h 10072h Managed by Internal ECC logic
803Ah 10074h Reserved for the future use Managed by Internal ECC logic
803Bh 10076h Reserved for the current and future use
803Ch 10078h ECC Code for Main area data (2nd) ECC Code for Main area data (1st)
803Dh 1007Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd)
803Eh 1007Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd)
803Fh 1007Eh Free Usage
DataS 1_2 8040h 10080h BI
8041h 10082h Managed by Internal ECC logic
8042h 10084h Reserved for the future use Managed by Internal ECC logic
8043h 10086h Reserved for the current and future use
8044h 10088h ECC Code for Main area data (2nd) ECC Code for Main area data (1st)
8045h 1008Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd)
8046h 1008Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd)
8047h 1008Eh Free Usage
Equivalent to 1word of NAND Flash
OneNAND512/OneNAND1GDDP FLASH MEMORY
25
NOTE:
- BI: Bad block Information
>Host can use complete spare area except BI and ECC code area. For example,
Host can write data to Spare area buffer except for the area controlled by ECC logic at program operation.
>In case of ’with ECC’ mode, OneNAND automatically generates ECC code for both main and spare data of memory during program operation
but does not update ECC code to spare bufferRAM during load operation.
>When loading/programming spare area, spare area BufferRAM address(BSA) and BufferRAM sector count(BSC) is chosen via Start buffer register
as it is.
Buf. Word
Address
Byte
Address F E D C B A 9 8 7 6 5 4 3 2 1 0
DataS 1_3 8048h 10090h BI
8049h 10092h Managed by Internal ECC logic
804Ah 10094h Reserved for the future use Managed by Internal ECC logic
804Bh 10096h Reserved for the current and future use
804Ch 10098h ECC Code for Main area data (2nd) ECC Code for Main area data (1st)
804Dh 1009Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd)
804Eh 1009Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd)
804Fh 1009Eh Free Usage
Equivalent to 1word of NAND Flash
OneNAND512/OneNAND1GDDP FLASH MEMORY
26
7. Detailed address map for registers
Address
(word order)
Address
(byte order) Name Host
Access Description
F000h 1E000h Manufacturer ID R Manufacturer identification
F001h 1E002h Device ID R Device identification
F002h 1E004h Version ID R Version identification
F003h 1E006h Data Buffer size R Data buffer size
F004h 1E008h Boot Buffer size R Boot buffer size
F005h 1E00Ah Amount of
buffers R Amount of data/boot buffers
F006h 1E00Ch Technology R Info about technology used for OneNAND
F007h~F0FFh 1E00Eh~1E1FEh Reserved - Reserved for user
F100h 1E200h Start address 1 R/W Chip address for selection of NAND
Core in DDP & Block address
F101h 1E202h Start address 2 R/W Chip address for selection of BufferRAM in DDP
F102h 1E204h Start address 3 R/W Destination Block address for Copy back program
F103h 1E206h Start address 4 R/W Destination Page & Sector address for Copy
back program
F104h 1E208h Start address 5 - N/A
F105h 1E20Ah Start address 6 - N/A
F106h 1E20Ch Start address 7 - N/A
F107h 1E20Eh Start address 8 R/W NAND Flash Page & Sector address
F108h~F1FFh 1E210h~1E3FEh Reserved - Reserved for user
F200h 1E400h Start Buffer R/W
Buffer Number for the page data transfer to/from the
OneNAND and the start Buffer Address
The meaning is with which buffer to start and how many
buffers to use for the data transfer
F201h~F207h 1E402h~1E40Eh Reserved - Reserved for user
F208h~F21Fh 1E410h~1E43Eh Reserved - Reserved for vendor specific purposes
F220h 1E440h Command R/W Host control and OneNAND operation commands
F221h 1E442h System
Configuration 1 R, R/W OneNAND and Host Interface Configuration
F222h 1E444h System
Configuration 2 -N/A
F223h~F22Fh 1E446h~1E45Eh Reserved - Reserved for user
F230h~F23Fh 1E460h~1E47Eh Reserved - Reserved for vendor specific purposes
F240h 1E480h Controller Status R Controller Status and result of OneNAND operation
F241h 1E482h Interrupt R/W OneNAND Command Completion Interrupt Status
F242h~F24Bh 1E484h~1E496h Reserved - Reserved for user
F24Ch 1E498h Start
Block Address R/W Start OneNAND block address to unlock in Write
Protection mode
F24Dh 1E49Ah End
Block Address R/W End OneNAND block address to unlock in Write
Protection mode
F24Eh 1E49Ch Write Protection
Status RCurrent OneNAND Write Protection status
(unlocked/locked/tight-locked)
F24Fh~FEFFh 1E49Eh~1FDFEh Reserved - Reserved for user
OneNAND512/OneNAND1GDDP FLASH MEMORY
27
Address
(word order)
Address
(byte order) Name Host
Access Description
FF00h 1FE00h ECC Status
Register R ECC status of sector
FF01h 1FE02h ECC Result of
main area data RECC error position of Main area data error for first
selected Sector
FF02h 1FE04h ECC Result of
spare area data RECC error position of Spare area data error for first
selected Sector
FF03h 1FE06h ECC Result of
main area data RECC error position of Main area data error for second
selected Sector
FF04h 1FE08h ECC Result of
spare area data RECC error position of Spare area data error for second
selected Sector
FF05h 1FE0Ah ECC Result of
main area data RECC error position of Main area data error for third
selected Sector
FF06h 1FE0Ch ECC Result of
spare area data RECC error position of Spare area data error for third
selected Sector
FF07h 1FE0Eh ECC Result of
main area data RECC error position of Main area data error for fourth
selected Sector
FF08h 1FE10h ECC Result of
spare area data RECC error position of Spare area data error for fourth
selected Sector
FF09h~FFFFh 1FE12h~1FFFEh Reserved - Reserved for vendor specific purposes
OneNAND512/OneNAND1GDDP FLASH MEMORY
28
7.1 Manufacturer ID Register (R): F000h, default=00ECh
ManufID (Manufacturer ID): manufacturer identification, 00ECh for Samsung Electronics Corp.
15 14 13 12 11 10 9876543210
ManufID
7.2 Device ID Register (R): F001h, default=refer to Table1
DeviceID (Device ID): Device Identification,
15 14 13 12 11 10 9876543210
DeviceID
7.3 Version ID Register (R): F002h
: N/A
Table 1.
Device DeviceID[15:0]
KFG1216Q2M 0024h
KFG1216D2M 0025h
KFG1216U2M 0025h
KFH1G16Q2M 0024h
KFH1G16D2M 0025h
KFH1G16U2M 0025h
OneNAND512/OneNAND1GDDP FLASH MEMORY
29
7.4 Data Buffer size Register(R): F003h, default=0800h
DataBufSize: total data buffer size in words in the memory interface
Equals two buffers of 1024 words each(2x1024=2N, N=11)
15 14 13 12 11 10 9876543210
DataBufSize
7.5 Boot Buffer size Register (R): F004h, default=0200h
BootBufSize: total boot buffer size in words in the memory interface
(512 words=29, N=9)
15 14 13 12 11 10 9876543210
BootBufSize
7.6 Amount of Buffers Register (R): F005h, default=0201h
DataBufAmount: the amount of data buffer=2(2N, N=1)
BootBufAmount: the amount of boot buffer=1(2N, N=0)
15 14 13 12 11 10 9876543210
DataBufAmount BootBufAmount
7.7 Technology Register (R): F006h, default=0000h
Tech: technology information, what technology is used for the memory
15 14 13 12 11 10 9876543210
Te c h
Tech Technology
0000h NAND SLC
0001h NAND MLC
0002h-FFFFh Reserved
OneNAND512/OneNAND1GDDP FLASH MEMORY
30
7.8 Start Address1 Register (R/W): F100h, default=0000h
DFS (Device Flash Core Select): it selects Flash Core in two Flash Core of DDP
FBA (NAND Flash Block Address): NAND Flash block address which will be loaded or programmed or erased.
15 14 13 12 11 10 9876543210
DFS Reserved(000000) FBA
7.9 Start Address2 Register (R/W): F101h, default=0000h
DBS (Device BufferRAM Select): it selects BufferRAM in two BufferRAM of DDP
15 14 13 12 11 10 9876543210
DBS Reserved(000000000000000)
7.10 Start Address3 Register (R/W): F102h, default=0000h
FCBA (NAND Flash Copy Back Block Address): NAND Flash destination block address which will be copy back programmed.
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved(0000000) FCBA
7.11 Start Address4 Register (R/W): F103h, default=0000h
FCPA (NAND Flash Copy Back Page Address): NAND Flash destination page address in a block for copy back program operation.
FCPA(default value) = 000000
FCPA range : 000000~111111, 6bits for 64 pages
FCSA (NAND Flash Copy Back Sector Address): NAND Flash destination sector address in a page for copy back program operation.
FCSA(default value) = 00
FCSA range : 00~11, 2bits for 4 sectors
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved(00000000) FCPA FCSA
Device Number of Block FBA
1Gb DDP 1024 DFS[15] & FBA[8:0]
512Mb 512 FBA[8:0]
Comp
Comp
DBS
DFS
DDP_OPT
GND
CE
CONTROL
LOGIC
SRAM
BUFFER
FLASH
CORE
Comp
Comp
DBS
DFS
DDP_OPT
VDD
CE
CONTROL
LOGIC
SRAM
BUFFER
FLASH
CORE
CE INT
CHIP 1
CHIP 2
INT
INT
Figure 4. Chip selection method in DDP
OneNAND512/OneNAND1GDDP FLASH MEMORY
31
7.12 Start Address5 Register: F104h
: N/A
7.13 Start Address6 Register: F105h
: N/A
7.14 Start Address7 Register: F106h
: N/A
7.15 Start Address8 Register (R/W): F107h, default=0000h
FPA (NAND Flash Page Address): NAND Flash start page address in a block for page load or copy back program or program operation.
FPA(default value)=000000
FPA range: 000000~111111 , 6bits for 64 pages
FSA (Flash Sector Address): NAND Flash start sector address in a page for read or copy back program or program operation.
FSA(default value) = 00
FSA range : 00~11, 2bits for 4 sectors
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved (00000000) FPA FSA
7.16 Start Buffer Register (R/W): F200h, default=0000h
BSC (BufferRAM Sector Count): this field specifies the number of sectors to be read or programmed or copy back programmed.
Its maximum count is 4 sectors at 00(default value)value. For a single sector access, it should be programmed as value 01.
However internal RAM buffer reached to 11vaule(max value), it count up to 00 value to satisfy BSC value.
For example1) If BSA=1010, BSC=11, then selected BufferRAM are ’1010 ->1011 ->1000’
There is restriction in BootRAM case.
For example2) If BSA=0000, BSC should be 01 or 10.
If BSA=0001, BSC should be 01.
BSA (BufferRAM Sector Address): It is the place where data is placed and specifies the sector 0~3 in the internal BootRAM and DataRAM
BSA[3] is the selection bit between BootRAM and DataRAM
BSA[2] is the selection bit between DataRAM0 and DataRAM1
BSA[1:0] are the selection bits for sectors in a BufferRAM
While one of BootRAM or DataRAM0 interfaces with memory, the other RAM is inaccessible.
15 14 13 12 11 10 9876543210
Reserved(0000) BSA Reserved(000000) BSC
BootRAM 0
BootRAM 1
DataRAM 0_0
DataRAM 0_1
DataRAM 0_2
DataRAM 0_3
BootRAM Sector: (512 + 16)byte
DataRAM0
DataRAM 1_0
DataRAM 1_1
DataRAM 1_2
DataRAM 1_3
DataRAM1
0000
0001
1000
1001
1010
1011
1100
1101
1110
1111
BSC Number of Sectors
01 1 sector
10 2 sector
11 3 sector
00 4 sector
{
Main area data
{
Spare area data
BSA
OneNAND512/OneNAND1GDDP FLASH MEMORY
32
NOTE:
1)’Reset OneNAND’(=Hot reset) command makes the registers(except RDYpol, INTpol, IOBE bits) and NAND Flash core into default state as the warm
reset(=reset by RP pin).
This R/W register describes the operation of the OneNAND interface.
Note that all commands should be issued right after INT is turned from ready state to busy state. (i.e. right after 0 is written to INT register.) After any
command is issued and the corresponding operation is completed, INT goes back to ready state. (00F0h and 00F3h may be accepted during busy state
of some operations. Refer to the rightmost column of the command register table above.)
CMD Operation
Acceptable
command
during busy
0000h Load single/multiple sector data unit into buffer 00F0h, 00F3h
0013h Load single/multiple spare sector into buffer 00F0h, 00F3h
0080h Program single/multiple sector data unit from buffer 00F0h, 00F3h
001Ah Program single/multiple spare area sector from buffer 00F0h, 00F3h
001Bh Copy back program 00F0h, 00F3h
0023h Unlock NAND array block(s) from start block address to end block address -
002Ah Lock all NAND array block(s) -
002Ch Lock-tight all locked block(s) -
0094h Block Erase 00F0h, 00F3h
00F0h Reset NAND Flash Core -
00F3h Reset OneNAND 1) -
0075h - 0065h OTP Access 00F0h, 00F3h
7.17 Command Register (R/W): F220h, default=0000h
Command: operation of the memory interface
15 14 13 12 11 10 9876543210
Command
OneNAND512/OneNAND1GDDP FLASH MEMORY
33
7.18 System Configuration 1 Register (R, R/W): F221h, default=40C0h
RM (Read Mode): this field specifies the selection between asynchronous read mode and synchronous read mode
15 14 13 12 11 10 9876543210
R/W R/W R/W R/W R/W R/W R/W R R
RM BRL BL ECC RDY
pol
INT
pol
IOB
EReserved(0000) BW
PS
RM Read Mode
0 Asynchronous read(default)
1 Synchronous read
BRL Latency Cycles
000 8(N/A)
001 9(N/A)
010 10(N/A)
011 3(N/A)
100 4(default, min.)
101 5
110 6
111 7
BRL (Burst Read Latency): this field specifies the initial access latency in the burst read transfer.
BL Burst Length(Main) Burst Length(Spare)
000 Continuous(default)
001 4 words
010 8 words
011 16 words
100 32 words N/A
101~111 Reserved
BL (Burst Length): this field specifies the size of burst length during Sync. burst read. Wrap around and linear burst.
ECC: Error Correction Operation,
0=with correction(default), 1=without correction(by-passed)
RDYpol: RDY signal polarity
0=low for ready, 1=high for ready((default)
INTpol: INT pin polarity
0=low for Interrupt pending , 1=high for Interrupt pending (default)
IOBE: I/O buffer enable for INT and RDY signals, INT and RDY outputs are HighZ at power-up, bit 7 and 6 become valid after IOBE is set to1.
IOBE can be reset only by Cold reset or by writing 0 to bit 5 of System Configuration 1 register.
0=disable(default), 1=enable
BWPS: boot buffer write protect status,
0=locked(default)
INTpol INT bit of Interrupt Status Register INT Pin output
00 1
10 0
OneNAND512/OneNAND1GDDP FLASH MEMORY
34
7.22 Controller Status Register (R): F240h, default=0000h
CB(Controller Busy) : this bit shows the overall internal status of OneNAND
0=ready, 1=busy
FC (Fault Check): this bit shows whether host loads data from NAND Flash array into locked BootRAM or programs/erases locked block of
NAND Flash array or put invalid command into the device.
15 14 13 12 11 10 9876543210
CB FC RB WB EB WRc Reserv
ed(0)
Reserv
ed(0) RSTB Reserved(000000) TO
(0)
FC Fault Check Result
0 No fault
1 Fault
WRc Current Sector/Page Program/CopyBack.
Program/Erase Result
0Pass
1Fail
WRc (Current Sector/Page Write Result): this bit shows current sector/page Program/Copy Back Program/Erase result of flash memory.
TO (Time Out): time out for load/program/copy back program/erase
0=no time out(fixed)
RB(Read Busy) : this bit shows the Load operation status
0=ready(default), 1=busy
WB(Write Busy) : this bit shows the Program operation status
0=ready(default), 1=busy
EB(Erase Busy) : this bit shows the Erase operation status
0=ready(default), 1=busy
RSTB(Reset Busy) : this bit shows the Reset operation status
0=ready(default), 1=busy
7.19 System Configuration 2 Register : F222h
: N/A
OneNAND512/OneNAND1GDDP FLASH MEMORY
35
table 2. Controller Status Register output for modes.
NOTE: 1. ERm and/or ERs bits in ECC status register at Load Fail case is 10. (2bits error - uncorrectable)
2. ERm and ERs bits in ECC status register at Load Reset case are 00. (No error)
3. OTP Erase does not update the register and the previous value is kept.
Mode Controller Status Register [15:0]
CB FC RB WB EB WRc Reserved(0) PRp RSTB Reserved(0) TO
Load Ongoing 1 0 1 0 0 0 0 0 0 000000 0
Program Ongoing 1 0 0 1 0 0 0 0 0 000000 0
Erase Ongoing 1 0 0 0 1 0 0 0 0 000000 0
Reset Ongoing 1 0 0 0 0 0 0 0 1 000000 0
Load OK 0 0 0 0 0 0 0 0 0 000000 0
Program OK 0 0 0 0 0 0 0 0 0 000000 0
Erase OK 0 0 0 0 0 0 0 0 0 000000 0
Load Fail1) 0 0 0 0 0 0 0 0 0 000000 0
Program Fail 0 0 0 0 0 1 0 0 0 000000 0
Erase Fail 0 0 0 0 0 1 0 0 0 000000 0
Load Reset2) 0 0 0 0 0 0 0 0 0 000000 0
Program Reset 0 0 0 0 0 0 0 0 0 000000 0
Erase Reset 0 0 0 0 0 0 0 0 0 000000 0
Program Lock 0 1 0 0 0 0 0 0 0 000000 0
Erase Lock 0 1 0 0 0 0 0 0 0 000000 0
Load Lock(Buffer Lock) 0 1 0 0 0 0 0 0 0 000000 0
OTP Program
Fail(Lock) 0 1 0 0 0 0 0 0 0 000000 0
OTP Program Fail 0 0 0 0 0 1 0 0 0 000000 0
Invalid Command 0 1 0 0 0 0 0 0 0 000000 0
OneNAND512/OneNAND1GDDP FLASH MEMORY
36
7.23 Interrupt Status Register (R/W): F241h, default=8080h(after Cold reset),8010h(after Warm/Hot reset)
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
INT Reserved(0000000) RI WI EI RSTI Reserved(0000)
7.24 Start Block Address (R/W): F24Ch, default=0000h
SBA (Start Block Address): Start NAND Flash block address to unlock in Write Protection mode, which preceeds ’Unlock block command’.
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved(0000000) SBA
7.25 End Block Address (R/W): F24Dh, default=0000h
EBA (End Block Address): End NAND Flash block address to unlock in Write Protection mode, which preceeds ’Unlock block command’. EBA should be
equal to or larger than SBA.
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved(0000000) EBA
Device Number of Block SBA/EBA
512Mb 512 [8:0]
Bit
Address
Bit Name Default State Valid
States
Function
Cold Warm/Hot
15 INT(interrupt): the master interrupt bit 1 1 0 Interrupt Off
- Set to ’1’ of itself when one or more of RI, WI, EI and
RSTI is set to ’1’, or Unlock(0023h), Lock(002Ah), Lock-
tight(002Ch) or OTP access(0075h - 0065h) operation is
completed.
- Cleared to ’0’ when by writing ’0’ to this bit or by
reset(Cold/Warm/Hot reset).
’0’ in this bit means that INT pin is low status.
(This INT bit is directly wired to the INT pin on the chip.
INT pin goes low upon writing ’0’ to this bit when
INTpol is high and goes high upon writing ’0’ to this
bit when INTpol is low. )
0->1 Interrupt Pending
7 RI(Read Interrupt): 1 0 0 Interrupt Off
- Set to ’1’ of itself at the completion of Load Operation
(0000h, 0013h, or boot is done.)
- Cleared to ’0’ when by writing ’0’ to this bit or by reset
(Cold/Warm/Hot reset).
0->1 Interrupt Pending
6 WI(Write Interrupt): 0 0 0 Interrupt Off
- Set to ’1’ of itself at the completion of Program Operation
(0080h, 001Ah, or 001Bh)
- Cleared to ’0’ when by writing ’0’ to this bit or by reset
(Cold/Warm/Hot reset).
0->1 Interrupt Pending
5 EI(Erase Interrupt): 0 0 0 Interrupt Off
- Set to ’1’ of itself at the completion of Erase Operation
(0094h)
- Cleared to ’0’ when by writing ’0’ to this bit or by reset
(Cold/Warm/Hot reset).
0->1 Interrupt Pending
4 RSTI(Reset Interrupt): 0 1 0 Interrupt Off
- Set to ’1’ of itself at the completion of Reset Operation
(00F0h, 00F3h, or warm reset is released.)
- Cleared to ’0’ when by writing ’0’ to this bit.
0->1 Interrupt Pending
OneNAND512/OneNAND1GDDP FLASH MEMORY
37
7.26 NAND Flash Write Protection Status (R): F24Eh, default=0002h
US (Unlocked Status): ’1’ value of this bit specifies that there is unlocked block in NAND Flash.
LS (Locked Status): ’1’ value of this bit specifies that there is locked block in NAND Flash.
LTS (Lock-tighten Status): ’1’ value of this bit specifies that ’Locked block(s)’ is lock-tighten.
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved(0000000000000) US LS LTS
7.27 ECC Status Register(R): FF00h, default=0000h
ERm (ECC Error for Main area data) & ERs (ECC Error for Spare area data)
ERm0/1/2/3 is for first/second/third/fourth selected sector main of BufferRAM, ERs0/1/2/3 is for first/second/third/fourth selected sector spare of BufferRAM.
ERm and ERs show the number of error in a sector as a result of ECC check at the load operation.
ERm and ERs bits are updated in boot loading operation, too.
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
ERm3 ERs3 ERm2 ERs2 ERm1 ERs1 ERm0 ERs0
NOTE:
1. 3bits or more error detection is not supported.
ERm, ERs ECC Status
00 No Error
01 1-bit error(correctable)
10 2-bit error(uncorrectable)1)
11 Reserved
7.28 ECC Result of first selected Sector Main area data Register (R): FF01h, default=0000h
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved(0000) ECCposWord0 ECCposIO0
7.29 ECC Result of first selected Sector Spare area data Register (R): FF02h, default=0000h
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved(0000000000) ECClogSector0 ECCposIO0
7.30 ECC Result of second selected Sector Main area data Register (R): FF03h, default=0000h
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved(0000) ECCposWord1 ECCposIO1
7.31 ECC Result of second selected Sector Spare area data Register (R): FF04h, default=0000h
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved(0000000000) ECClogSector1 ECCposIO1
7.32 ECC Result of third selected Sector Main area data Register (R): FF05h, default=0000h
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved(0000) ECCposWord2 ECCposIO2
OneNAND512/OneNAND1GDDP FLASH MEMORY
38
7.33 ECC Result of third selected Sector Spare area data Register (R): FF06h, default=0000h
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved(0000000000) ECClogSector2 ECCposIO2
7.34 ECC Result of fourth selected Sector Main area data Register (R): FF07h, default=0000h
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved(0000) ECCposWord3 ECCposIO3
7.35 ECC Result of fourth selected Sector Spare area data Register (R): FF08h, default=0000h
NOTE:
1. ECCposWord: ECC error position address that selects one of Main area data(256words)
2. ECCposIO: ECC error position address which selects one of sixteen DQs (DQ 0~DQ 15).
3. ECClogSector: ECC error position address that selects one of the 2nd word and LSB of the 3rd word of spare area. Refer to the below table.
ECClogSector Information [5:4]
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Reserved(0000000000) ECClogSector3 ECCposIO3
ECClogSector Error Position
00 2nd word
01 3rd word
10, 11 Reserved
OneNAND512/OneNAND1GDDP FLASH MEMORY
39
8 Device Operation
The device supports both a limited command based and a register based interface for performing operations on the device, reading
device ID, writing data to buffer etc. The command based interface is active in the boot partition, i.e. commands can only be written
with a boot area address. Boot area data is only returned if no command has been issued prior to the read.
8.1 Command based operation
The entire address range, except for the boot area, can be used for the data buffer. All commands are written to the boot partition. Writes outside the
boot partition are treated as normal writes to the buffers or registers. The command consists of one or more cycles depending on the command. After
completion of the command the device starts its execution. Writing incorrect information which include address and data or writing an improper command
will terminate the previous command sequence and make the device go to the ready status. The defined valid command sequences are stated in Table3.
Table 3. Command Sequences
NOTE:
1) DP(Data Partition) : DataRAM Area
2) BP(Boot Partition) : BootRAM Area [0000h ~ 01FFh, 8000h ~ 800Fh). It is locked after power-up.
3) Load Data into Buffer operation is available within a block(128KB)
4) Load 2KB unit into DataRAM0. Current Start address(FPA) is automatically incremented by 2KB unit after the load.
5) 0000h -> Data is Manufacturer ID
0001h -> Data is Device ID
6) WE toggling can terminate ’Read Identification Data’ operation.
8.1.1 Read Data from Buffer
Buffer can be read by addressing a read to a wanted buffer area
8.1.2 Write Data to Buffer
Buffer can be written by addressing a write to a wanted buffer area
8.1.3 Reset OneNAND
Reset command is given by writing 00F0h to the boot partition address. Reset will return all default values into the device.
8.1.4 Load Data into Buffer
Load Data into Buffer command is a two-cycle command. Two sequential designated command activates this operation. Sequentially writing 00E0h and
0000h to the boot partition [0000h~01FFh, 8000h~800Fh] will load one page to DataRAM0. This operation refers to FBA and FPA. FSA, BSA, and BSC
are not considered. At the end of this operation, FPA will be automatically increased by 1. So continuous issue of this command will sequentially load
data in next page to DataRAM0. This page address increment is restricted within a block. The default value of FBA and FPA is 0. Therefore, initial issue
of this command after power on will load the first page of memory, which is usually boot code.
8.1.5 Read Identification Data
Read Identification Data command consists of two cycles. It gives out the devices identification data according to the given address. The first cycle is
0090h to the boot partition address and second cycle is read from the addresses specified in Table5.
Command Definition Cycles 1st cycle 2nd cycle
Read Data from Buffer Add 1DP1)
Data Data
Write Data to Buffer Add 1DP
Data Data
Reset OneNAND Add 1BP2)
Data 00F0h
Load Data into Buffer3) Add 2BP BP
Data 00E0h 0000h4)
Read Identification Data 6) Add 2BP XXXXh5)
Data 0090h Data
OneNAND512/OneNAND1GDDP FLASH MEMORY
40
Device Bus Operations
Note : L=VIL (Low), H=VIH (High), X=Don’t Care.
Operation CE OE WE ADD0~15 DQ0~15 RP CLK AVD
Standby H X X X High-Z H X X
Warm Reset XXXXHigh-ZLXX
Asynchronous Write L H L Add. In Data In H L
Asynchronous Read L L H Add. In Data Out H L
Load Initial Burst Address L H H Add. In X H
Burst Read L L H X Burst Data
Out HX
Terminate Burst Read
Cycle HXHXHigh-ZHXX
Terminate Burst Read
Cycle via RP XXXXHigh-ZLXX
Terminate Current Burst
Read Cycle and Start
New Burst Read Cycle
H H Add. In High-Z H
Table 4. Identification data description
Address Data Out
0000h Manufacturer ID 00ECh
0001h Device ID refer to table 1
OneNAND512/OneNAND1GDDP FLASH MEMORY
41
Figure 5. Cold Reset Timings
Note: 1) Bootcode copy operation starts 400us later than POR activation.
The system power should reach Vcc after POR triggering level(typ. 1.5V) within 400us for valid boot code data.
2) 1K bytes Bootcode copy takes 70us(estimated) from sector0 and sector1/page0/block0 of NAND Flash array to BootRAM.
Host can read Bootcode in BootRAM(1K bytes) after Bootcode copy completion.
3) INT register goes ‘Low’ to ‘High’ on the condition of ‘Bootcode-copy done’ and RP rising edge.
If RP goes ‘Low’ to ‘High’ before ‘Bootcode-copy done’, INT register goes to ‘Low’ to ‘High’ as soon as ‘Bootcode-copy done’
Reset Mode
Cold Reset
At system power-up, the voltage detector in the device detects the rising edge of Vcc and releases internal power-up reset signal
which triggers bootcode loading. Bootcode loading means that the boot loader in the device copies designated sized data(1KB) from
the beginning of memory to the BootRAM.
System Power
Sleep Bootcode copy Idle
Bootcode - copy done
POR triggering level
3)
2)
RP
INT
OneNAND
Operation
0 (default) 1
IOBE bit
1 (default)
INTpol bit
High-Z
1)
INT bit 0 (default) 1
OneNAND512/OneNAND1GDDP FLASH MEMORY
42
Warm Reset
Warm reset means that the host resets the device by RP pin, and then the device logic stops all current operation and executes inter-
nal reset operation(Note 1) synchronized with the falling edge of RP and resets current NAND Flash core operation synchronized with
the rising edge of RP
. The device logic will not be reset in case RP pulses shorter than 200ns, but the device guarantees the logic
reset operation in case RP pulse is longer than 200ns. NAND Flash core reset will abort current NAND Flash Core operation. The
contents of memory cells being altered are no longer valid as the data will be partially programmed or erased. Warm reset has no
effect on contents of BootRAM and DataRAM.
Figure 6. Warm Reset Timings
RP
Operation or Idle internal reset operation NAND Flash core reset
initiated by RP high
INT
OneNAND
Operation
initiated by RP low
CE, OE
RDY
Idle
High-Z High-Z High-Z
Operation or Idle
Operation
OneNAND512/OneNAND1GDDP FLASH MEMORY
43
Hot Reset
Hot reset means that the host resets the device by reset command(Note 2), and then the device logic stops all current operation and
executes internal reset operation(Note 1) , and resets current NAND Flash core operation. Hot reset has no effect on contents of
BootRAM and DataRAM.
Figure 7. Hot Reset Timings
NOTE:
1. Internal reset operation means that the device initializes internal registers and makes output signals go to default status and bufferRAM data are kept
unchanged after Warm/Hot reset operations.
2. Reset command : Command based reset or Register based reset
3. BP(Boot Partition) : BootRAM area[0000h~01FFh, 8000h~800Fh]
AVD
BP(Note 3)
INT
A0~A15
WE
CE
or F220h
RDY
Operation or Idle OneNAND reset Idle
OneNAND
Operation
High-Z
DQ0~DQ15 00F0h
or 00F3h
OneNAND512/OneNAND1GDDP FLASH MEMORY
44
NAND Flash Core Reset
Host can reset NAND Flash Core operation by NAND Flash Core reset command. NAND Flash Core Reset will abort the current
NAND Flash core operation. During a NAND Flash Core Reset, the content of memory cellls being altered is no longer valid as the
data will be partially programmed or erased. NAND Flash Core Reset has an effect on neither contents of BootRAM and DataRAM
nor register values.
Figure 8. NAND Flash Core Reset Timings
AVD
INT
WE
CE
F220h
RDY
Operation or Idle NAND Flash Core reset Idle
OneNAND
Operation
High-Z
00F0h
A0~A15
DQ0~DQ15
OneNAND512/OneNAND1GDDP FLASH MEMORY
45
Table 7. Internal Register reset
NOTE: 1) RDYpol, INTpol, and IOBE are reset by Cold reset. The other bits are reset by Cold/Warm/Hot reset.
2) ECC Status Register & ECC Result Registers are reset when any command is issued.
3) Refer to table 1
Internal Registers Default Cold Reset Warn Reset
(RP)
Hot
Reset
(00F3h)
Hot
Reset
(BP-F0)
NAND Flash
Reset(00F0h)
F000h Manufacturer ID Register (R) 00ECh N/A N/A N/A N/A
F001h Device ID Register (R) Note3 N/A N/A N/A N/A
F002h Version ID Register (rR): 54MHz 001Eh N/A N/A N/A N/A
F003h Data Buffer size Register (R) 0800h N/A N/A N/A N/A
F004h Boot Buffer size Register (R) 0200h N/A N/A N/A N/A
F005h Amount of Buffers Register (R) 0201h N/A N/A N/A N/A
F006h Technology Register (R) 0000h N/A N/A N/A N/A
F100h Start Address1 Register (R/W): DFS, FBA 0000h 0000h 0000h 0000h N/A
F101h Start Address2 Register (R/W): DBS 0000h 0000h 0000h 0000h N/A
F102h Start Address3 Register (R/W): FCBA 0000h 0000h 0000h 0000h N/A
F103h Start Address4 Register (R/W): FCPA, FCSA 0000h 0000h 0000h 0000h N/A
F107h Start Address5 Register (R/W): FPA, FSA 0000h 0000h 0000h 0000h N/A
F200h Start Buffer Register (R/W): BSA, BSC 0000h 0000h 0000h 0000h N/A
F220h Command Register (R/W) 0000h 0000h 0000h 0000h N/A
F221h System Configuration 1 Register (R/W) 40C0h 40C0h O (Note1) O (Note1) N/A
F240h Controller Status Register (R) 0000h 0000h 0000h 0000h N/A
F241h Interrupt Status Register (R/W) - 8080h 8010h 8010h N/A
F24Ch Start Block Address (R/W) 0000h 0000h 0000h N/A N/A
F24Dh End Block Address (R/W) 0000h 0000h 0000h N/A N/A
F24Eh NAND Flash Write Protection Status (R) 0002h 0002h 0002h N/A N/A
FF00h ECC Status Register (R) (Note2) 0000h 0000h 0000h 0000h N/A
FF01h ECC Result of Sector 0 Main area data Register(R) 0000h 0000h 0000h 0000h N/A
FF02h ECC Result of Sector 0 Spare area data Register (R) 0000h 0000h 0000h 0000h N/A
FF03h ECC Result of Sector 1 Main area data Register(R) 0000h 0000h 0000h 0000h N/A
FF04h ECC Result of Sector 1 Spare area data Register (R) 0000h 0000h 0000h 0000h N/A
FF05h ECC Result of Sector 2 Main area data Register(R) 0000h 0000h 0000h 0000h N/A
FF06h ECC Result of Sector 2 Spare area data Register (R) 0000h 0000h 0000h 0000h N/A
FF07h ECC Result of Sector 3 Main area data Register(R) 0000h 0000h 0000h 0000h N/A
FF08h ECC Result of Sector 3 Spare area data Register (R) 0000h 0000h 0000h 0000h N/A
OneNAND512/OneNAND1GDDP FLASH MEMORY
46
Write Protection
Write Protection for BootRAM
At system power-up, the voltage detector in the device detects the rising edge of Vcc and releases the internal power-up reset signal
which triggers bootcode loading. And the designated size data(1KB) is copied from the beginning of the memory to the BootRAM.
After the bootcode loading is completed, the BootRAM is always locked to protect the significant boot code from the accidental write.
Write Protection for NAND Flash array
Write Protection Modes
The device offers both hardware and software write protection features for NAND Flash array. The software write protection feature is
used by writing Lock command or Lock-tight command to command register;The 002Ah or 002Ch command is written into F220h
register. And the hardware write protection feature is used by executing cold or warm reset. The default state is locked, and all NAND
Flash array goes to locked state after cold or warm reset.
Write Protection Commands
The instant secured block protects code and data by allowing blocks to be locked or lock-tighten. The write protection scheme offers
two levels of protection. The first allows software-only control of write protection(useful for frequently changed data blocks), while the
second requires hardware interaction before locking can be changed(protects infrequently changed code blocks).
The followings summarize the locking functionality
> All blocks power-up in a locked state. Unlock commands can unlock these blocks.
>The lock-tight command makes locked block(s) lock-tighten block(s). And lock-tight state can be returned to lock state only
when cold or warm reset is asserted.
> Lock-tighten blocks offer the user an additional level of write protection beyond that of a regular locked block.
Lock-tighten block can’t have it’s state changed by software, it can be changed by warm reset or cold reset.
> Unlock start and end block address are reflected immediately to the device only when the unlock command is issued, and
NAND Flash write protection status register is also updated at that time.
> Unlocked blocks can be programmed or erased.
> Only one consecutive area can be released to unlock state from lock state, i.e unlocking multi area is not available.
> Partial block lock (a range) is not available, i.e lock operation is only available for all blocks.
Write Protection Status
The device current Write Protection status can be read in NAND Flash Write Protection Status Register(F24Eh). There are three bits
- US, LS, LTS -, which are not cleared by hot reset. These Write Protection status registers are updated when Write Protection com-
mand is entered.
The followings summarize locking status.
example1)
In default, [2:0] values are 010.
-> If host executes unlock block operation, then [2:0] values turn to 110.
-> If host executes lock-tight block operation, then [2:0] values turn to 101.
example2)
If host executes lock block operation, then [2:0] values turn to 010.
-> If host executes lock-tight block operation, then [2:0] values turn to 001.
-> If cold or warm reset is entered, then [2:0] values turn to 010.
OneNAND512/OneNAND1GDDP FLASH MEMORY
47
Figure 9. State diagram of NAND Flash Write Protection
NOTE:
1. Unlock range(from Start block address to End block address) can be modified by unlock command sequence(Start block address+End block address).
Power On
Start block address End block address
+Unlock block Command (Note 1)
RP pin: High
&
Start block address End block address
+Unlock block Command
RP pin: High
&
Lock block Command
RP pin: High
&
Lock-tight block Command
RP pin: High
&Cold reset or
unlock
Lock
Lock-tight
Lock
Lock
unlock
unlock
Lock-tight
Lock
Lock
Lock-tight
Lock-tight block Command
RP pin: High
&
Warm reset
Cold reset or
Warm reset
or
OneNAND512/OneNAND1GDDP FLASH MEMORY
48
Figure 10. Operations of NAND Flash Write Protection
Unlocked
Locked
> Command Sequence : Lock block command(002Ah)
> All blocks default to locked after Cold reset or Warm reset
> Partial block lock (a range) is not available ; Lock block operation
is only available for all blocks
> Unlocked blocks can be locked by using the Lock block
command and a lock block’s status can be changed to
unlock or lock-tight using the appropriate software commands
> Command Sequence :
Start block address+End block address+Unlock block command
(0023h)
> Unlocked block can be programmed or erased
> An unlocked block’s status can be changed to the locked or
lock-tighten state using the appropriate software command
> Only one sequential area can be released to unlock state from
lock state ; Unlocking multi area is not available
Lock-tighten
> Command Sequence : Lock-tight block command(002Ch)
> Lock-tighten blocks offer the user an additional level of write
protection beyond that of a regular lock block. A block that
is lock-tighten cannot have it’s state change by software,
only by Cold or Warm reset.
> Only locked blocks can be lock-tighten by Lock-tight command.
> Lock-tighten blocks revert to the locked state at Cold or Warm
reset
> Lock-tighten area does not change with any command;
when new unlock command is issued including the lock-tighten
area, new unlocked command is ignored.
OneNAND512/OneNAND1GDDP FLASH MEMORY
49
Load Operation
The load operation is initiated by setting up the start address from which the data is to be loaded. The load command is issued in
order to initiate the load. The device transfers the data from NAND Flash array into the BufferRAM. The ECC is checked and any
detected and corrected error is reported in the status response as well as any unrecoverable error. When the BufferRAM has been
filled an interrupt is issued to the host in order to read the contents of the BufferRAM. The read from the BufferRAM consist of asyn-
chronous read mode or synchronous read mode. The status information related to the BufferRAM fill operation can be checked by
the host if required.
The device provides dual data buffer memory architecture. The device is capable of data-read operation from one data buffer and
data-load operation to the other data buffer simultaneously. Refer to the information for more details in "Read while Load operation".
Start
Write ’DFS*, FBA’ of Flash
Add: F100h DQ=FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Select DataRAM for DDP
Add: F101h DQ=DBS
Write ’Load’ Command
Add: F220h
DQ=0000h or 0013h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Figure 11. Load operation flow-chart
* DBS, DFS is for DDP
Host reads data from
DataRAM
Read completed
Write 0 to interrupt register
Add: F241h DQ=0000h
OneNAND512/OneNAND1GDDP FLASH MEMORY
50
Read Operation
The device has two read configurations ; Asynchronous read and Synchronous burst read.
The initial state machine makes the device to be automatically entered into asynchronous read mode to prevent the memory content
from spurious altering upon device power up or after a hardware reset. No commands are required to retrieve data in asynchronous
mode. The synchronous mode will be enabled by setting RM bit of System configuration1 register to Synchronous read mode.
Asynchronous Read Mode (RM = 0)
For the asynchronous read mode a valid address should be asserted on ADD0-ADD15, while driving AVD and CE to VIL. WE
should remain at VIH . The data will appear on ADD15-ADD0. Address access time (tAA) is equal to the delay from valid addresses to
valid output data. The chip enable access time(tCE) is the delay from the falling edge of CE to valid data at the outputs. The output
enable access time(tOE) is the delay from the falling edge of OE to valid data at the output.
Synchronous (Burst) Read Mode (RM = 1)
The device is capable of continuous linear burst operation and linear burst operation of a preset length. For the burst mode, the host
should determine how many clock cycles are desired for the initial word(tIAA) of each burst access using BRL bit of System configura-
tion 1 register. The registers also can be read during burst read mode by using AVD signal with a address. To initiate the synchro-
nous read again, a new address during CE low toggle is needed after the host has completed status reads or the device has
completed the program or erase operation.
Continuous Linear Burst Read
The initial word is output tIAA after the rising edge of the first CLK cycle. Subsequent words are output tBA after the rising edge of each
successive clock cycle, which automatically increments the internal address counter. The RDY output indicates this condition to the
system by pulsing low. The device will continue to output sequential burst data, wrapping around after it reaches the designated loca-
tion(See Figure 12 for address map information) until the system asserts CE high, RP low or AVD low in conjunction with a new
address. The cold/warm/hot reset or asserting CE high or WE low pulse terminate the burst read operation.
If the device is accessed synchronously while it is set to asynchronous read mode, it is possible to read out the first data
without problems.
Division Add.map(word order)
BootM(0.5Kw) 0000h~01FFh Buffer0
BufM 0(1Kw) 0200h~05FFh
BufM 1(1Kw) 0600h~09FFh Buffer1
Reserved Main 0A00h~7FFFh N/A Reg.
BootS(16w) 8000H~800Fh Buffer0
BufS 0(32w) 8010h~802Fh
BufS 1(32w) 8030h~804Fh Buffer1
Reserved Spare 8050h~8FFFh N/A Reg.
Reserved Reg. 9000h~EFFFh
Register(4Kw) F000h~FFFFh Reg.
Not Support
Not Support
Not Support
Figure 12. The boundary of synchronous read
* Reserved area is not available on Synchronous read
OneNAND512/OneNAND1GDDP FLASH MEMORY
51
Programmable Burst Read Latency
The programmable burst read latency feature indicates to the device the number of additional clock cycles that must elapse after
AVD is driven active before data will be available. Upon power up, the number of total initial access cycles defaults to four clocks. The
number of total initial access cycles is programmable from four to seven cycles.
4-, 8-,16-, 32- Word Linear Burst Read
As well as the Continuous Linear Burst Mode, there are four(4 & 8 & 16 & 32 word) (Note1) linear wrap-around mode, in which a fixed
number of words are read from consecutive addresses. When the last word in the burst mode is reached, assert /CE and /OE high to
terminate the operation. In these modes, the start address for burst read can be any address of address map.
(Note 1) 32 word linear burst read isn’t available on spare area BufferRAM
Figure 13. Example of 4clock Burst Read Latency
Handshaking
The handshaking feature allows the host system to simply monitor the RDY signal from the device to determine when the initial word
of burst data is ready to be read. To set the number of initial cycle for optimal burst mode, the host should use the programmable
burst read latency configuration.(See "System Configuration1 Register" for details.) The rising edge of RDY which is derived from 1
clock ahead of data fetch clock indicates the initial word of valid burst data.
Output Disable Mode
When the CE or OE input is at VIH , output from the device is disabled. The outputs are placed in the high impedance state.
tIAA
Hi-Z
CE
CLK
AVD
OE
RDY
tRDYS
tRDYA
DQ0:
DQ15
D6 D7 D0 D1 D2 D3 D7 D0
Hi-Z
01234
tBA
Rising edge of the clock cycle following last read latency
triggers next burst data
A0:
A15
Valid
Address
-1
Table 6. Burst Address Sequences
Start
Addr.
Burst Address Sequence(Decimal)
Continuous Burst 4-word Burst 8-word Burst 16-word Burst 32-word Burst
Wrap
around
0 0-1-2-3-4-5-6... 0-1-2-3-0... 0-1-2-3-4-5-6-7-0... 0-1-2-3-4-....-13-14-15-0... 0-1-2-3-4-....-29-30-31-0...
1 1-2-3-4-5-6-7... 1-2-3-0-1... 1-2-3-4-5-6-7-0-1... 1-2-3-4-5-....-14-15-0-1... 1-2-3-4-5-....-30-31-0-1...
2 2-3-4-5-6-7-8... 2-3-0-1-2... 2-3-4-5-6-7-0-1-2... 2-3-4-5-6-....-15-0-1-2... 2-3-4-5-6-....-31-0-1-2...
.
.
.
.
.
.
.
.
.
.
.
.
56
OneNAND512/OneNAND1GDDP FLASH MEMORY
52
Program Operation
The device can be programmed in data unit. Programming is writing 0's into the memory array by executing the internal program rou-
tine. In order to perform the Internal Program Routine, command sequence is necessary. First, host sets the address of the Buffer-
RAM and the memory location and loads the data to be programmed into the BufferRAM. Second, program command initiates the
internal program routine. During the execution of the Routine, the host is not required to provide further controls or timings. During the
Internal Program Routine, commands except reset command written to the device will be ignored.
Note that a reset during a program operation will cause data corruption at the corresponding location.
The device provides dual data buffer memory architecture. The device is capable of data-write operation from host to one of data buff-
ers during program operation from anther data buffer to Flash simultaneously. Refer to the information for more details in "Read while
Load operation".
Figure 14. Program operation flow-chart
Start
Data Input
Write ’DFS*, FBA’ of Flash
Add: F100h DQ=DFS*’, FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Select DataRAM for DDP1)
Add: F101h DQ=DBS*
Write Data into DataRAM2)
ADD: DP DQ=Data-in
Program completed
Write ’Program’ Command
Add: F220h
DQ=0080h or 001Ah
Completed?
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=WRC
DQ[10]=0?
Program Error
YES NO
NO
YES
* DBS, DFS is for DDP
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
Note 1) This must happen before data input
2) Data input could be done anywhere between "Start" and "Write Program Command".
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
OneNAND512/OneNAND1GDDP FLASH MEMORY
53
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most sig-
nificant bit) pages of the block. Random page address programming is prohibited.
From the LSB page to MSB page
DATA IN: Data (1) Data (64)
(1)
(2)
(3)
(32)
(64)
Data register
Page 0
Page 1
Page 2
Page 31
Page 63
Ex.) Random page program (Prohibition)
DATA IN: Data (1) Data (64)
(2)
(32)
(3)
(1)
(64)
Data register
Page 0
Page 1
Page 2
Page 31
Page 63
:
:
:
:
OneNAND512/OneNAND1GDDP FLASH MEMORY
54
Copy-back Program Operation
The copy-back program is configured to quickly and efficiently rewrite data stored in one page by sector unit(1/2/3/4 sector) without
utilizing an external memory. Since the time-consuming cycles of serial access and re-loading cycles are removed, the system perfor-
mance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of the block also need to be
copied to the newly assigned free block. The operation for performing a copy-back program is a sequential execution of page-read
without serial access and copying-program with the address of destination page.
Start
Write ’DFS*, FBA’ of Flash
Add: F100h DQ=DFS*, FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’FCBA’ of Flash
Add: F102h DQ=FCBA
Write ’FCPA, FCSA’ of Flash
Add: F103h DQ=FCPA, FCSA
Copy back completed
Write ’Copy-back Program’
command
Add: F220h DQ=001Bh
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=WRc
DQ[10]=0?
Copy back Error
YES NO
Figure 15. Copy back program operation flow-chart
* DBS, DFS is for DDP
Note 1) Selected DataRAM by BSA & BSC is used for Copy back operation, so previous data is overwritten.
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
Select DataRAM for DDP
Add: F101h DQ=DBS*
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC 1)
OneNAND512/OneNAND1GDDP FLASH MEMORY
55
Copy-Back Program Operation with Random Data Input
The Copy-Back Program Operation with Random Data Input in OneNAND consists of 2 phase, Load data into DataRAM, Modify data
and program into designated page. Data from the source page is saved in one of the on-chip DataRAM buffers and modified by the
host, then programmed into the destination page.
As shown in the flow chart, data modification is possible upon completion of load operation. ECC is also available at the end of load
operation. Therefore, using hardware ECC of OneNAND, accumulation of 1 bit error can be avoided.
Copy-Back Program Operation with Random Data Input will be effectively utilized at modifying certain bit, byte, word, or sector of
source page to destination page while it is being copied.
Start
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Write ’Load’ Command
Add: F220h
DQ=0000h or 0013h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Add: F240h DQ[10]=Error
DQ[10]=0?
NO
YES
Status Register
Map Out
Write 0 to interrupt register
Add: F241h DQ=0000h
Copy back completed
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=Error
DQ[10]=0?
Copy back Error
YES NO
Random Data Input
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’Program’ Command
Add: F220h
DQ=0080h or 001Ah
Write 0 to interrupt register
Add: F241h DQ=0000h
Add: Random Address in
Selected DataRAM
DQ=Data
Figure 16. Copy-Back Program Operation with Random Data Input Flow Chart
OneNAND512/OneNAND1GDDP FLASH MEMORY
56
Erase Operation
The device can be erased in block unit. To erase a block is to write 1s into the desired memory block by executing the Internal Erase
Routine. In order to perform the Internal Erase Routine, command sequence is necessary. First, host sets the block address of the
memory location. Second, erase command initiates the internal erase routine. During the execution of the Routine, the host is not
required to provide further controls or timings. During the Internal erase routine, commands except reset command written to the
device will be ignored.
Note that a reset during a erase operation will cause data corruption at the corresponding location.
Start
Write ’DFS*, FBA’ of Flash
Add: F100h DQ=DFS*, FBA
Write ’Erase’ Command
Add: F220h DQ=0094h
Wait for INT register
Add: F241h DQ=[15]=INT
Add: F240h DQ[10]=WRc
Erase completed
DQ[10]=0?
YES
Erase Error
NO
low to high transition
Read Controller
Status Register
Figure 17. Erase operation flow-chart
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Write 0 to interrupt register
Add: F241h DQ=0000h
* DFS is for DDP
OneNAND512/OneNAND1GDDP FLASH MEMORY
57
OTP Operation
The device supports one block sized OTP area, which can be read and programmed with the same sequence as normal operation.
But this OTP block could not be erased. This block is separated from NAND Flash Array, so it could be accessed by OTP Access
command instead of FBA. If user wants to exit from OTP access mode, Cold, Warm and Hot Reset operation should be done.
OTP area is one block size(128KB, 64pages) and is divided by two areas. The first area from page 0 to page 9, total 10pages, is
assigned for user and the second area from page 10 to page 63, total 54pages, are occupied for the device manufacturer. The man-
ufacturer area is programmed prior to shipping, so this area could not be used by user.
This block is fully guaranteed to be a valid block.
OTP Block Page Allocation Information
Area Page Use
User 0 ~ 9 (10 pages) Designated as user area
Manufacturer 10 ~ 63 (54 pages) Used by the device manufacturer
Page:2KB+64B
Sector(main area):512B
Sector(spare area):16B
Figure 18. OTP area structure and assignment
One Block:
128KB+4KB
64pages
Reserved Area :
page 10 to page 63
54pages
User Area :
page 0 to page 9
10pages
OneNAND512/OneNAND1GDDP FLASH MEMORY
58
Figure 19. OTP load operation flow-chart
Note 1) FBA(NAND Flash Block Address) could be omitted or any address.
OTP Load(OTP Access+Load NAND)
OTP area is separated from NAND Flash Array, so it is accessed by OTP Access command instead of FBA. The content of OTP
could be loaded with the same sequence as normal load operation after being accessed by the command. If user wants to exit from
OTP access mode, Cold, Warm, Hot or NAND Flash Core Reset operation should be done.
* DBS, DFS is for DDP
Start
Wait for INT register
Add: F241h DQ[15]=INT
Write ’FPA, FSA’ of Flash1)
Add: F107h DQ=FPA, FSA
OTP Load completed
Write ’Load’ Command
Add: F220h
DQ=0000h or 0013h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write ’OTP Access’ Command
Add: F220h DQ=0075h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
low to high transition
OTP Exit
Host reads data from
DataRAM
Do Cold/Warm/Hot
/NAND Flash Core Reset
Write ’DFS*, FBA’ of Flash1)
Add: F100h DQ=DFS*’, FBA
Select DataRAM for DDP
Add: F101h DQ=DBS
Write 0 to interrupt register
Add: F241h DQ=0000h
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’OTP Access’ Command
Add: F220h DQ=0065h
OneNAND512/OneNAND1GDDP FLASH MEMORY
59
* DBS, DFS is for DDP
Figure 20. OTP program operation flow-chart
2) Data input could be done anywhere between "Start" and "Write Program Command".
Note 1) FBA(NAND Flash Block Address) could be any address.
OTP Programming(OTP Access+Program NAND)
OTP area could be programmed with the same sequence as normal program operation after being accessed by the command. But in
case of OTP area program, OTP area is not a real OTP area but can be programmed more than once. And 2 command sequence is
used to avoid the accidental write. To avoid the accidental write, FBA should point the unlocked area address among NAND Flash
Array address map even though OTP area is separated from NAND Flash Array.
3) FBA should point the unlocked area address among NADND Flash Array address map.
Write ’DFS*, FBA’ of Flash2)
Add: F100h DQ=DFS*’, FBA
Start
Write ’OTP Access’ Command
Add: F220h DQ=0075h
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
OTP Programming completed
Write Program command
DQ=0080h or 001Ah
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Add: F220h
Wait for INT register
Add: F241h DQ[15]=INT
low to high transition
OTP Exit
Add: F200h DQ=BSA, BSC
Write ’FBA’ of Flash
Add: F100h DQ=FBA3)
Select DataRAM for DDP
Add: F101h DQ=DBS*
Data Input
Write Data into DataRAM1)
Add: DP DQ=Data-in
Completed?
NO
Do Cold/Warm/Hot
/NAND Flash Core reset
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Write 0 to interrupt register
Add: F241h DQ=0000h
Write 0 to interrupt register
Add: F241h DQ=0000h
OneNAND512/OneNAND1GDDP FLASH MEMORY
60
Page B
ADD
WE
OE
INT
0~15
2)
2)
Page A
Read While Load
Page A
Page B
1) Load
2) Load
Data
Buffer1
Data
Buffer0
2) Read
The device provides dual data buffer memory architecture. The device is capable of data-read operation from one data buffer and load operation to another data buffer simulta-
neously. This is so called the Read while Load operation with dual data buffer architecture, this feature provides the capability of executing reading data from one of data buffers
during load operation from Flash to the other buffer simultaneously. Refer to the information for more details in "Load operation" before performing read while load operation.
Simultaneous load and read operation to same data buffer is prohibited.
1)
Add_
reg
Int_
reg
CMD_
reg
CS_
reg
Data Load
_DB0
Data Load
_DB1
Data Read
_DB0 *
Add_
reg
Int_
reg
CMD_
reg
Add_
reg
Add_
reg
DB1
_add
LD_
CMD
Read
Status
DB0
_add 0000h LD_
CMD
Flash
DQ
0~15
Int_reg : Interrupt Register Address
Add_reg : Address Register Address
Flash_add : Flash Address to be loaded
DBn_add : DataRAM Address to be loaded
CMD_reg : Command Register Address
LD_CMD : Load Command
Data Load_DBn : Load Data from NAND Flash Array to DataRAMn
CS_reg : Controller Status Register Address
Data Read_DBn : Read Data from DBn
DBn_radd : DataRAM Address to be read
1)
Data Load
_DB0
DB0_radd*
Data Load
_DB1
_add 0000h
Flash
_add
* DBS should be set before accessing DataRAM for DDP
OneNAND512/OneNAND1GDDP FLASH MEMORY
61
Page B
ADD
OE
INT
0~15
3)
2)
Page A
The device provides dual data buffer memory architecture. The device is capable of write operation and program operation simultaneously. This is so called the write while
program operation with dual data buffer architecture, this feature provides the capability of executing write operation from host to one of data buffers during program operation
from anther data buffer to Flash simultaneously. Refer to the information for more details in "Program operation" before performing write while program operation. Simulta-
neous program and write operation to same data buffer is prohibited.
1)
WE
DB0_wadd* Add_
reg
Add_
reg
Int_
reg
CMD_
reg
CS_
reg
Int_
reg
CMD_
reg
Data PGM
_PageB
Page A
Page B
2) Program
3) Program
Data
Buffer1
Data
Buffer0
1) Write
2) Write
Write While Program
3) Write
DQ
0~15
DB0
_add
Flash
_add 0000h PD_
CMD Data Write
_DB1 *
DB1
_add
Read
Status 0000h PD_
CMD
Data PGM
_PageA
Add_reg : Address Register Address
DBn_add : DataRAM Address to be programmed
DBn_wadd : DataRAM Address to be written
Data Write_DBn : Write Data to DataRAMn
Flash_add : Flash Address to be programmed
Int_reg : Interrupt Register Address
CMD_reg : Command Register Address
PD_CMD : Program Command
Data PGM_PageA : Program Data from DataRAM to PageA
CS_reg : Controller Status Register Address
Data Write
_DB0 *
DB1_wadd*
Data PGM
_PageA
2)
Add_
reg
Add_
reg
Flash
_add Data Write
_DB0 *
DB0_wadd*
Data PGM
_PageB
* DBS should be set before accessing DataRAM for DDP
OneNAND512/OneNAND1GDDP FLASH MEMORY
62
ECC Operation
While the device transfers data from BufferRAM to NAND Flash Array Page Buffer for Program Operation, the device hiddenly gener-
ates ECC(24bits for main area data and 10bits for 2nd and 3rd word data of each sector spare area) and while Load operation, hid-
denly generates ECC and detects error number and position and corrects 1bit error. ECC is updated by the device automatically.
After Load Operation, host can know whether there is error or not by reading ’ECC Status Register’(refer to ECC Status Register
Table). In addition, OneNAND supports 2bit EDC even though it is little probable that 2bit error occurs. Hence, it is not recommeded
that Host reads ’ECC Status Register’ for checking ECC error because the built-in Error Correction Logic of OneNAND finds out and
corrects ECC error.
When the device loads NAND Flash Array main and sprea area data with ECC operation, the device does not place the newly gener-
ated ECC for main and spare area into the buffer but places ECC which was generated and written in program operation into the
buffer.
Ecc operation is done during the boot loading operation.
ECC Bypass Operation
ECC bypass operation is set by 9th bit of System Configuration 1 register. In ECC Bypass operation, the device neither generates
ECC result which indicates error position nor updates ECC code to NAND Flash arrary spare area in program operation(refer to ECC
Result Register Tables). During Load operation, the on-chip ECC engine does not generate a new ECC internally and the values of
ECC Status and Result Registers are invalid. Hence, in ECC Bypass operation, the error cannot be detected and corrected by Mux-
OneNAND itself. ECC Bypass operation is not recommended to host.
Table 7. ECC Code & Result Status by ECC operation mode
NOTE:
1. Pre-written ECC code : ECC code which is previously written to NAND Flash Spare Area in program operation.
Operation
Program operation Load operation
ECC Code Update to NAND
Flash Array Spare Area
ECC Code at BufferRAM Spare
Area
ECC Status & Result Update
to Registers 1bit Error
ECC operation Update Pre-written ECC code(1) loaded Update Correct
ECC bypass Not update Pre-written code loaded Invalid Not correct
OneNAND512/OneNAND1GDDP FLASH MEMORY
63
Data Protection during Power Down
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.3V. RP pin provides hardware protection and is recommended to be kept at VIL
before power-down.
VCC
RP
NAND Flash Core
Write Protected
Idle
OneNAND Reset
INT
OneNAND
Operation
typ. 1.3V
0V
Figure 21. Data Protection during Power Down
OneNAND512/OneNAND1GDDP FLASH MEMORY
64
Technical Notes
Identifying Invalid Block(s)
Invalid Block(s)
Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The infor-
mation regarding the invalid block(s) is so called as the invalid block information. Devices with invalid block(s) have the same quality
level as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the perfor-
mance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design
must be able to mask out the invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is fully guar-
anteed to be a valid block.
All device locations are erased(FFFFh) except locations where the invalid block(s) information is written prior to shipping. The invalid
block(s) status is defined by the 1st word in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid
block has non-FFFFh data at the 1st word of sector0 spare area. Since the invalid block information is also erasable in most cases, it
is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the invalid
block(s) based on the original invalid block information and create the invalid block table via the following suggested flow chart. Any
intentional erasure of the original invalid block information is prohibited.
*
Figure 22. Flow chart to create invalid block table.
Start
Set Block Address = 0
Check "
Increment Block Address
Last Block ?
End
No
Yes
Yes
Create (or update) No
Invalid Block(s) Table FFFFh" ?
Check "FFFFh" at the 1st word
of sector0 spare area at the 1st
and 2nd page in the block
OneNAND512/OneNAND1GDDP FLASH MEMORY
65
Error in write or load operation
Within its life time, additional invalid blocks may develop with the device. Refer to the qualification report for the actual data.The fol-
lowing possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after
erase or program, block replacement should be done. Because program status fail during a page program does not affect the data of
the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and
reprogramming the current target data and copying the rest of the replaced block.
Failure Mode Detection and Countermeasure sequence
Write Erase Failure Status Read after Erase --> Block Replacement
Program Failure Status Read after Program --> Block Replacement
Load Single Bit Failure Error Correction by ECC mode of the device
Block Replacement
When an error happens in the nth page of the Block ’A’ during program operation.
* Step1
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’ via data buffer0.
* Step2
Copy the nth page data of the Block ’A’ in the data buffer1 to the nth page of another free block. (Block ’B’)
Do not further erase or program Block ’A’ but create an ’invalid Block’ table or other appropriate scheme.
Data Buffer1 of the device
1st
Block A
Block B
(n-1)th
nth
(page)
{
1st
(n-1)th
nth
(page)
{
an error occurs.
1
2
Data Buffer0 of the device
1
(assuming maintain the nth page data)
Technical Notes (Continued)
OneNAND512/OneNAND1GDDP FLASH MEMORY
66
Technical Notes (Continued)
DDP Chip Selection Register
OneNAND DDP configuration does not require additional pins. NAND Flash Block Address is consecutive between LSB and MSB
chips. As seen in the figure below, the LSB Block Address ends at 01FFh(Block 511) and the MSB Block Address begins at
1000h(Block 512). The Device Flash Core Select (DFS) of Start Address 1 Register and the Device BufferRAM Select (DBS) of Start
Address 2 Register are used to select the desired LSB or MSB Flash Core and BufferRAM in the DDP.
Start Address1 Register (R/W): F100h, default=0000h
This Read/Write register is used to select the Flash Core of the LSB or MSB device (DFS).
DFS (Device Flash Core Select): it selects Flash Core in two Flash Core of DDP
FBA (NAND Flash Block Address): NAND Flash block address which will be read or programmed or erased.
15 14 13 12 11 10 9876543210
DFS Reserved(000000) FBA
Start Address2 Register (R/W): F101h, default=0000h
This Read/Write register is used to select the BufferRAM of the LSB or MSB device (DBS).
DBS (Device BufferRAM Select): it selects BufferRAM in two BufferRAM of DDP
15 14 13 12 11 10 9876543210
DBS Reserved(000000000000000)
Chip Start Address1 Register Block Number
LSB Chip 0000h ~ 01FFh Block0 ~ Block511
MSB Chip 1000h ~ 11FFh Block512 ~ Block1023
Block 0
Block 1
Block 510
Block 511
Block 512
Block 513
Block 1022
Block 1023
LSB Chip
MSB Chip
Figure 23. Flash Block Address Map in DDP
0000h
Start Address Register1
01FFh
1000h
11FFh
OneNAND DDP Technical Note
OneNAND512/OneNAND1GDDP FLASH MEMORY
67
Technical Notes (Continued)
Flash Core Array Selection for Unlock Operation
The LSB and MSB Flash Cores in a OneNAND DDP configuration power-up in a locked state and must be unlocked before opera-
tion. Set DFS and DBS = "0" to select the LSB Chip or "1" to select the MSB chip, then issue Unlock Command Sequence: Start block
address+End block address+Unlock block command (0023h).
Note that the LSB and MSB chips must each be unlocked. The default state for Device BufferRAM Select (DBS) and Device Flash
Core Select (DFS) = "0", which selects the LSB chip. For more information on lock operations.
DDP Chip Selection Operation
Flash Array is locked at Power up
Unlock
. LSB Chip Case
. MSB Chip Case
Set DBS=0 to select BufferRAM of LSB chip
Flash Array is locked at Power up
Unlock
Set DBS=1 to select BufferRAM of MSB chip
Set DFS=0 to select BufferRAM of LSB chip
Set DFS=1 to select BufferRAM of MSB chip
BufferRAM Selection for Read/Write Operation
The LSB and MSB chip BufferRAMs operate independently. Select the desired LSB or MSB chip and then execute a BufferRAM
Read/Write operation. The default state for Device BufferRAM Select (DBS) and Device Flash Core Select (DFS) = "0", which selects
the LSB chip.
For more information on read/write operations.
. LSB Chip Case
Set DBS=0 to select BufferRAM of LSB chip
Set DBS=1 to select BufferRAM of MSB chip
BufferRAM Read/Write
BufferRAM Read/Write
. MSB Chip Case
BufferRAM and Flash Core Selection for Load/Program/Erase/Copy-back/Cache Program/Write Protect Operation
The LSB and MSB chip BufferRAMs operate independently. Select the desired LSB or MSB chip and then execute a BufferRAM
Read/Write operation. The default state for Device BufferRAM Select (DBS) and Device Flash Core Select (DFS) = "0", which selects
the LSB chip.
For more information on read/write operations.
. LSB Chip Case
Set DBS=0 to select BufferRAM of LSB chip
Set DBS=1 to select BufferRAM of MSB chip
. MSB Chip Case
Set DFS=0 to select BufferRAM of LSB chip
Set DFS=1 to select BufferRAM of MSB chip
Load/Program/Erase/Copy-back
Cache Program/Write Protection Commands
Load/Program/Erase/Copy-back
Cache Program/Write Protection Commands
OneNAND512/OneNAND1GDDP FLASH MEMORY
68
One of the best features OneNAND has is that it can be a booting device itself since it contains an internally built-in boot loader
despite the fact that its core architecture is based on NAND Flash. Thus, OneNAND does not make any additional booting device
necessary for a system, which imposes extra cost or area overhead on the overall system.
As the system power is turned on, the boot code originally stored in NAND Flash Arrary is moved to BootRAM automatically and then
fetched by CPU through the same interface as SRAM’s or NOR Flash’s if the size of the boot code is less than 1KB. If its size is larger
than 1KB and less than or equal to 3KB, only 1KB of it can be moved to BootRAM automatically and fetched by CPU, and the rest of
it can be loaded into one of the DataRAMs whose size is 2KB by Load Command and CPU can take it from the DataRAM after finish-
ing the code-fetching job for BootRAM. If its size is larger than 3KB, the 1KB portion of it can be moved to BootRAM automatically
and fetched by CPU, and its remaining part can be moved to DRAM through two DataRAMs using dual buffering and taken by CPU
to reduce CPU fetch time.
A typical boot scheme usually used to boot the system with OneNAND is explained at Figure 24 and Figure 25. In this boot scheme,
boot code is comprised of BL1, where BL stands for Boot Loader, BL2, and BL3. Moreover, the size of the boot code is larger than
3KB (the 3rd case above). BL1 is called primary boot loader in other words. Here is the table of detailed explanations about the func-
tion of each boot loader in this specific boot scheme.
Boot Loaders in OneNAND
NAND Flash Array of OneNAND is divided into the partitions as described at Figure 24 to show where each component of code is
located and how much portion of the overall NAND Flash Array each one occupies. In addition, the boot sequence is listed below and
depicted at Figure 25.
Boot Sequence :
1. Power is on
BL1 is loaded into BootRAM
2. BL1 is executed in BootRAM
BL2 is loaded into DRAM through two DataRams using dual buffering by BL1
3. BL2 is executed in DRAM
OS image is loaded into DRAM through two DataRams using dual buffering by BL2
4. OS is running
Boot Loader Description
BL1 Moves BL2 from NAND Flash Array to DRAM through two DataRAMs using dual buffering
BL2 Moves OS image (or BL3 optionally) from NAND Flash Array to DRAM through two DataRams using dual buffering
BL3 (Optional) Moves or writes the image through USB interface
Technical Notes (Continued)
Boot Sequence
OneNAND512/OneNAND1GDDP FLASH MEMORY
69
Reservoir
File System
Os Image
NBL3
NBL2
NBL1
Block 511
Partition 6
Block 162
Block 2
Block 1
Block 0
Partition 5
Sector 0 Sector 1 Sector 2 Sector 3
Page 63
Page 62
Page 2
Page 1
Page 0
BL2
Partition 4
Partition 3
Figure 24. Partition of NAND Flash array
Reservoir
File System
Os Image
BL3
BL2
BL1
Block 511
Partition 6
Block 162
Block 2
Block 1
Block 0
Partition 5
Sector 0 Sector 1 Sector 2 Sector 3
Page 63
Page 62
Page 2
Page 1
Page 0
Partition 4
Partition 3
:
:
Reservoir
File System
Os Image
BL2
BL1
Os Image
BL 2
NAND Flash Array
OneNAND DRAM
Figure 25. OneNAND Boot Sequence
2
3
1
BL1
Internal BufferRAM
Data Ram 1
Data Ram 0
Boot Ram(BL 1)
NOTE:
and can be copied into DRAM through two DataRAMs using dual buffering
23
Technical Notes (Continued)
OneNAND512/OneNAND1GDDP FLASH MEMORY
70
There are two methods of determining Interrupt Status on the OneNAND. Using the INT pin or monitoring the Interrupt Status Regis-
ter Bit.
The OneNAND INT pin is an output pin function used to notify the Host when a command has been completed. This provides a hard-
ware method of signaling the completion of a program, erase, or load operation.
In its normal state, the INT pin is high if the INT polarity bit is default. Before a command is written to the command register, the INT
bit must be written to '0' so the INT pin transitions to a low state indicating start of the operation. Upon completion of the command
operation by the OneNAND’s internal controller, INT returns to a high state.
INT is an open drain output allowing multiple INT outputs to be Or-tied together. INT does not float to a hi-Z condition when the chip is
deselected or when outputs are disabled. Refer to section 2.8 for additional information about INT.
INT can be implemented by tying INT to a host GPIO or by continuous polling of the Interrupt status register.
INT can be tied to a Host GPIO to detect the rising edge of INT, signaling the end of a command operation.
This can be configured to operate either synchronously or asynchronously as shown in the diagrams below.
INT
COMMAND
Technical Notes (Continued)
Methods of Determining Interrupt Status
The INT Pin to a Host General Purpose I/O
OneNAND512/OneNAND1GDDP FLASH MEMORY
71
Synchronous Mode Using the INT Pin
When operating synchronously, INT is tied directly to a Host GPIO.
An alternate method of determining the end of an operation is to continuously monitor the Interrupt Status Register Bit instead of
using the INT pin.
Host OneNAND
Asynchronous Mode Using the INT Pin
When configured to operate in an asynchronous mode, /CE and /AVD of the OneNAND are tied to /CE of the Host. CLK is tied to the
Host Vss (Ground). /RDY is tied to a no-connect. /OE of the OneNAND and Host are tied together and INT is tied to a GPIO.
RDY
OE
CLK
CE
RDY
OE
CLK
CE
AVD AVD
GPIO INT
Host OneNAND
N.C
OE
Vss
CE
RDY
OE
CLK
CE
AVD
GPIO INT
INT
Command
This can be configured in either a synchronous mode or an asynchronous mode.
Polling the Interrupt Register Status Bit
Technical Notes (Continued)
OneNAND512/OneNAND1GDDP FLASH MEMORY
72
Synchronous Mode Using Interrupt Status Register Bit Polling
When operating synchronously, /CE, /AVD, CLK, /RDY, /OE, and DQ pins on the host and OneNAND are tied together.
Host OneNAND
RDY
OE
CLK
CE
RDY
OE
CLK
CE
AVD AVD
DQ DQ
Asynchronous Mode Using Interrupt Status Register Bit Polling
When configured to operate in an asynchronous mode, /CE and /AVD of the OneNAND are tied to /CE of the Host. CLK is tied to the
Host Vss (Ground). /RDY is tied to a no-connect. /OE and DQ of the OneNAND and Host are tied together.
Host OneNAND
N.C
OE
CE
RDY
OE
CLK
CE
AVD
DQ DQ
Vss
Technical Notes (Continued)
OneNAND512/OneNAND1GDDP FLASH MEMORY
73
tr,tf
Ibusy [mA]
Rp(ohm)
Ibusy
tr[us]
@ Vcc = 1.8V, Ta = 25°C , CL = 30pF
1K 10K 20K 30K
0.089
tf[ns]
0.7727 1.345
1.788
3.77 3.77 3.77 3.77
1.75
0.18
0.09
40K 50K
2.142
2.431
3.77 3.77
0.045
0.06
0.036
Open(100K)
5.420
0.000
Busy State
Ready Vcc
VOH
tf tr
VOL Vss
~50k ohm
INT
Internal Vcc
Rp
INT pol = ’High’
Determing Rp Value
Because the pull-up resistor value is related to tr(INT), an appropriate value can be obtained by the following reference charts.
Technical Notes (Continued)
OneNAND512/OneNAND1GDDP FLASH MEMORY
74
~50k ohm
INT
Internal Vcc
Rp
INT pol = ’Low’
tr,tf
Ibusy [mA]
Rp(ohm)
Ibusy
tf[us]
@ Vcc = 1.8V, Ta = 25°C , CL = 30pF
1K 10K 20K 30K
0.067
tr[ns]
0.586 1.02
1.356
6.49 6.49 6.49 6.49
1.75
0.18
0.09
40K 50K
1.623
1.84
6.49 6.49
0.045
0.06
0.036
Open(100K)
4.05
0.000
Busy State
Ready
VOH
tf
tr
VOL
Vss
Vcc
Technical Notes (Continued)
OneNAND512/OneNAND1GDDP FLASH MEMORY
75
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level should not fall to POR level(typ. 1.5V) .
Maximum DC voltage is Vcc+0.6V on input / output pins which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter Symbol
Rating
Unit
KFG1216Q2M
KFH1G16Q2M
KFG1216D2M
KFH1G16D2M
KFG1216U2M
KFH1G16U2M
Voltage on any pin relative
to VSS
Vcc Vcc -0.5 to + 2.45 -0.6 to + 4.6 -0.6 to + 4.6 V
All Pins VIN -0.5 to + 2.45 -0.6 to + 4.6 -0.6 to + 4.6
Temperature Under Bias Extended Tbias
-30 to +125 -30 to +125 -30 to +125 °C
Industrial - - -40 to +125
Storage Temperature Tstg -65 to +150 -65 to +150 -65 to +150 °C
Short Circuit Output Current IOS 555mA
Operating Temperature TA (Extended Temp.) -30 to + 85 -30 to + 85 - °C
TA (Industrial Temp.) - - -40 to + 85
RECOMMENDED OPERATING CONDITIONS ( Voltage reference to GND )
NOTES:
1. The system power should reach 1.7V after POR triggering level(typ. 1.5V) within 400us.
2. Vcc-Core should reach the operating voltage level prior to Vcc-IO.
Parameter Symbol 1.8V Device 2.65V Device 3.3V Device Unit
Min Typ. Max Min Typ. Max Min Typ. Max
Supply Voltage VCC-Core/
VCC-IO 1.7 1.8 1.95 2.4 2.65 2.9 2.7 3.3 3.6 V
Supply Voltage VSS 000000000V
OneNAND512/OneNAND1GDDP FLASH MEMORY
76
DC CHARACTERISTICS
NOTES:
1. CE should be VIH for RDY. IOBE should be ’0’ for INT
2. ICC active for Host access
3. ICC active while Internal operation is in progress
Parameter Sym-
bol Test Conditions 1.8V device 2.65V device 3.3V device Unit
Min Typ Max Min Typ Max Min Typ Max
Input Leakage Current ILI VIN=VSS to VCC, VCC=VCCmax - 1.0 - + 1.0 - 1.0 - + 1.0 - 1.0 - + 1.0 µA
Output Leakage Cur-
rent ILO VOUT=VSS to VCC, VCC=VCCmax
, CE or OE=VIH(Note 1) - 1.0 - + 1.0 - 1.0 - + 1.0 - 1.0 - + 1.0 µA
Active Asynchronous
Read Current (Note 2) ICC1 CE=VIL, OE=VIH - 8 15 - 10 20 - 10 20 mA
Active Burst Read
Current (Note 2) ICC2 CE=VIL, OE=VIH
54MHz - 12 20 - 20 30 - 20 30 mA
1MHz - 3 4 - 4 6 - 4 6 mA
Active Write Current
(Note 2) ICC3 CE=VIL, OE=VIH - 8 15 - 10 20 - 10 20 mA
Active Load Current
(Note 3) ICC4 CE=VIL, OE=VIH, WE=VIH,
VIN=VIH or VIL - 20 25 - 25 30 - 25 30 mA
Active Program Cur-
rent (Note 3) ICC5 CE=VIL, OE=VIH, WE=VIH,
VIN=VIH or VIL - 20 25 - 25 30 - 25 30 mA
Active Erase Current
(Note3) ICC6 CE=VIL, OE=VIH, WE=VIH,
VIN=VIH or VIL - 15 20 - 20 25 - 20 25 mA
Standby Current ISB CE= RP=VCC ± 0.2V Single - 10 50 - 20 50 - 20 50 µA
DDP - 20 100 - 40 100 - 40 100
Input Low Voltage VIL - -0.5 - 0.4 -0.5 - 0.4 0 - 0.8 V
Input High Voltage VIH -VCCIO
-0.4 -VCCIO
+0.4
VCCIO
-0.4 -VCCIO
+0.4
0.7*
VCCIO -0.7*
VCCIO V
Output Low Voltage VOL IOL = 100 µA , VCC=VCCmin ,
VCCq=VCCqmin --0.2--0.2--
0.22*
VCCIO V
Output High Voltage VOH IOH = -100 µA , VCC=VCCmin ,
VCCq=VCCqmin
VCCIO
-0.1 --
VCCIO
-0.4 --
0.8*V
CCIO --V
OneNAND512/OneNAND1GDDP FLASH MEMORY
77
AC TEST CONDITION(VCC = 1.8V/2.65V/3.3V)
Parameter Value
Input Pulse Levels 0V to VCC
Input Rise and Fall Times CLK 3ns
other inputs 5ns
Input and Output Timing Levels VCC/2
Output Load CL = 30pF
0V
VCC
VCC/2 VCC/2
Input Pulse and Test Point
Input & Output
Test Point
CAPACITANCE(TA = 25 °C, VCC = 1.8V/2.65V/3.3V, f = 1.0MHz)
NOTE : Capacitance is periodically sampled and not 100% tested.
Item Symbol Test Condition Single DDP Unit
Min Max Min Max
Input Capacitance CIN1 VIN=0V - 10 - 20 pF
Control Pin Capacitance CIN2 VIN=0V - 10 - 20 pF
Output Capacitance COUT VOUT=0V - 10 - 20 pF
Output Load
Device
Under
Tes t
* CL = 30pF including scope
and Jig capacitance
VALID BLOCK
Note :
1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program
factory-marked bad blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block.
Parameter Symbol Min Typ. Max Unit
Valid Block Number NVB 502 - 512 Blocks
OneNAND512/OneNAND1GDDP FLASH MEMORY
78
AC CHARACTERISTICS
Synchronous Burst Read
Note
1. If OE is disabled before CE is disabled, the output will go to high-z by tOEZ(max. 17ns).
If CE is disabled before OE is disabled, the output will go to high-z by tCEZ(max. 20ns).
If CE and OE are disabled at the same time, the output will go to high-z by tOEZ(max. 17ns).
2. It is the following clock of address fetch clock.
Parameter Symbol KFG1216X2M/KFH1G16X2M Unit
Min Max
Clock CLK 1 54 MHz
Clock Cycle tCLK 18.5 - ns
Initial Access Time(at 54MHz) tIAA - 88.5 ns
Burst Access Time Valid Clock to Output Delay tBA - 14.5 ns
AVD Setup Time to CLK tAVDS 7-ns
AVD Hold Time from CLK tAVDH 7-ns
Address Setup Time to CLK tACS 7-ns
Address Hold Time from CLK tACH 7-ns
Data Hold Time from Next Clock Cycle tBDH 4-ns
Output Enable to Data tOE -20ns
CE Disable to Output High Z tCEZ1) -20ns
OE Disable to Output High Z tOEZ1) -17ns
CE Setup Time to CLK tCES 7-ns
CLK High or Low Time tCLKH/L tCLK/3 - ns
CLK 2) to RDY valid tRDYO - 14.5 ns
CLK to RDY Setup Time tRDYA - 14.5 ns
RDY Setup Time to CLK tRDYS 4-ns
CE low to RDY valid tCER -15ns
OneNAND512/OneNAND1GDDP FLASH MEMORY
79
SWITCHING WAVEFORMS
NOTE: In order to avoid a bus conflict the OE signal is enabled on the next rising edge after AVD is going high.
5 cycles for initial access shown.
tCES
tAVDS
tAVDH
tACS
tACH
tIAA
tBA
tBDH
tCLK
CE
CLK
AVD
OE
DQ0-DQ15
A0-A15
D6 D7 D0 D1 D2 D3 D7
tRDYA
Figure 27. Continuous Linear Burst Mode with Wrap Around
tOE
BRL=4
Figure 26. 8 Word Linear Burst Mode with Wrap Around
tCEZ
tOEZ
D0
tCLKH tCLKL
tRDYO
tCER
5 cycles for initial access shown.
tCES
tAVDS
tAVDH
tACS
tACH
tIAA
tBA
tBDH
tCLK
Hi-Z
CE
CLK
AVD
OE
DQ0-DQ15
RDY
A0-A15
tRDYS
Da Da+1 Da+2 Da+3 Da+4 Da+5 Da+n
tRDYA
tOE
BRL=4
tCEZ
tOEZ
Da+n+1
Hi-Z
tRDYO
tCER
Hi-Z
RDY
tRDYS
Hi-Z
OneNAND512/OneNAND1GDDP FLASH MEMORY
80
AC CHARACTERISTICS
Asynchronous Read
NOTE:
1. If OE is disabled before CE is disabled, the output will go to high-z by tOEZ(max. 17ns).
If CE is disabled before OE is disabled, the output will go to high-z by tCEZ(max. 20ns).
If CE and OE are disabled at the same time, the output will go to high-z by tOEZ(max. 17ns).
These parameters are not tested 100%.
Parameter Symbol KFG1216X2M/KFH1G16X2M Unit
Min Max
Access Time from CE Low tCE -76ns
Asynchronous Access Time from AVD Low tAA -76ns
Asynchronous Access Time from address valid tACC -76ns
Read Cycle Time tRC 76 - ns
AVD Low Time tAVDP 12 - ns
Address Setup to rising edge of AVD tAAVDS 7-ns
Address Hold from rising edge of AVD tAAVDH 7-ns
Output Enable to Output Valid tOE -20ns
WE Disable to AVD Enable tWEA 15 - ns
CE Setup to AVD falling edge tCA 0-ns
CE Disable to Output & RDY High Z1) tCEZ -20ns
OE Disable to Output & RDY High Z1) tOEZ -17ns
SWITCHING WAVEFORMS
Figure 28 . Asynchronous Read Mode(AVD toggling)
NOTE: VA=Valid Read Address, RD=Read Data.
tOE
VA
Valid RD
tCE tOEZ
CE
OE
WE
A0-A15
CLK VIL
AVD
Hi-Z
Hi-Z
RDY
tAVDP
tAAVDH
DQ0-DQ15
tCEZ
Case 1 : Valid Address and AVD Transition occur before CE is driven to Low
OneNAND512/OneNAND1GDDP FLASH MEMORY
81
Figure 29. Asynchronous Read Mode(AVD toggling)
NOTE: VA=Valid Read Address, RD=Read Data.
tOE
VA
Valid RD
tOEZ
CE
OE
WE
A0-A15
CLK VIL
AVD
tAA
Hi-Z
Hi-Z
RDY
tAVDP
tAAVDH
DQ0-DQ15
tWEA
tCEZ
Case 2 : AVD Transition occurs after CE is driven to Low and Valid Address Transition occurs before AVD is driven to Low
Case 3 : AVD Transition occur after CE is driven to Low and Valid Address Transition occurs after AVD is driven to Low
Figure 30. Asynchronous Read Mode(AVD toggling)
NOTE: VA=Valid Read Address, RD=Read Data.
tOE
VA
Valid RD
tOEZ
CE
OE
WE
A0-A15
tACC
CLK VIL
AVD
tAAVDS
Hi-Z
Hi-Z
RDY
tAVDP
tAAVDH
DQ0-DQ15
tWEA
tCEZ
OneNAND512/OneNAND1GDDP FLASH MEMORY
82
Figure 31. Asynchronous Read Mode(AVD tied to CE)
NOTE: VA=Valid Read Address, RD=Read Data.
tOE
VA
Valid RD
tCE tOEZ
CE
OE
WE
A0-A15
tACC
CLK VIL
Hi-Z
Hi-Z
RDY
tRC
DQ0-DQ15
tCEZ
Case 4 : AVD is tied to CE
OneNAND512/OneNAND1GDDP FLASH MEMORY
83
Asynchronous write operation
Parameter Symbol KFG1216X2M/KFH1G16X2M Unit
Min Typ Max
WE Cycle Time tWC 70 - - ns
AVD low pulse width tAVDP 12 - - ns
Address Setup to rising edge of AVD tAAVDS 7--ns
Address Setup to falling edge of WE tAWES 0
Address Hold to rising edge of AVD tAAVDH 7--ns
Address Hold to falling edge of WE tAH 10 ns
Data Setup to rising edge of WE tDS 10 - - ns
Data Hold from rising edge of WE tDH 4--ns
CE Setup to falling edge of WE tCS 0--ns
CE Hold from rising edge of WE AVD toggled tCH1 0--ns
CE Hold from rising edge of WE AVD tied to CE tCH2 10 - - ns
WE Pulse Width tWPL 40 - - ns
WE Pulse Width High tWPH 30 - - ns
AVD Disable to WE Disable tVLWH 15 - - ns
WE Disable to AVD Enable tWEA 15 - - ns
AC CHARACTERISTICS
OneNAND512/OneNAND1GDDP FLASH MEMORY
84
Figure 32. Latched Asynchronous Write Mode(AVD toggling)
CE
WE
OE
tCS
Valid WD
tDS
VA
Valid WD
tWPL tWPH
tWC
tAAVDS
tDH
AVD
tAAVDH
VA
RDY Hi-Z Hi-Z
A0-A15
DQ0-DQ15
tWEA
CLK VIL
Case 1 : AVD is toggled every write cycle
NOTE: VA=Valid Read Address, WD=Write Data.
tAVDP
tVLWH
tCH1
tCH1
tCS
OneNAND512/OneNAND1GDDP FLASH MEMORY
85
Figure 33. Asynchronous Write Mode(AVD toggling)
Case 2 : AVD is synchronized with CE
NOTE: VA=Valid Read Address, WD=Write Data.
AVD
CE
WE
OE
tCS
Valid WD
tDS
Valid WD
tWPL tWPH
tWC
tDH
VA
RDY Hi-Z Hi-Z
A0-A15
DQ0-DQ15
CLK VIL
tCH2
tAWES tAH
VA
tCH2 tCS
OneNAND512/OneNAND1GDDP FLASH MEMORY
86
Figure 34. Asynchronous Write Mode(AVD tied to CE)
Case 3 : AVD is tied to CE
NOTE: VA=Valid Read Address, WD=Write Data.
CE or AVD
WE
OE
tCS
Valid WD
tDS
Valid WD
tWPL tWPH
tWC
tDH
VA
RDY Hi-Z Hi-Z
A0-A15
DQ0-DQ15
CLK VIL
tCH2
tAWES tAH
VA
tCH2 tCS
OneNAND512/OneNAND1GDDP FLASH MEMORY
87
AC CHARACTERISTICS
Figure 35. Reset Timing
Reset
NOTE: These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and
pull-down resistor value. Please refer to page 73 and 74.
Parameter Symbol
KFG1216U2M/
KFH1G16X2M Unit
Min Max
RP & Reset Command Latch(During Load Routines) to INT High (Note) tRST -10µs
RP & Reset Command Latch(During Program Routines) to INT High (Note) tRST -20µs
RP & Reset Command Latch(During Erase Routines) to INT High (Note) tRST - 500 µs
RP & Reset Command Latch(NOT During Internal Routines) to Read Mode (Note) tRST -10µs
INT High to Read Mode (Note) tReady 200 - ns
RP Pulse Width tRP 200 - ns
SWITCHING WAVEFORMS
CE, OE
RP
tRP tReadytRST
INT bit
AVD
BP or F220h
INT bit
Ai
WE
CE
Hot Reset
tRST
DQi 00F0h
or 00F3h
Warm Reset
OE
tReady
OneNAND512/OneNAND1GDDP FLASH MEMORY
88
Performance
NOTES: These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and
pull-down resistor value. Please refer to page 73 and 74.
Parameter Symbol Min Typ Max Unit
Sector Load time (Note 1) tRD1 -4045
µs
Page Load time (Note 1) tRD2 - 85 100 µs
Sector Program time (Note 1) tPGM1 - 320 720 µs
Page Program time (Note 1) tPGM2 - 350 750 µs
OTP Access time(Note 1) tOTP - 600 1000 ns
Lock/Unlock/Lock-tight time (Note 1) tLOCK - 600 1000 ns
Number of Partial Program Cycles in the sector
(Including main and spare area) NOP --2cycles
Block Erase time (Note 1) 1 Block tBERS1 -23ms
OneNAND512/OneNAND1GDDP FLASH MEMORY
89
Read Command Sequence
A0:A15
WE
CE
CLK
tDS
tDH
tCH1
tWPL
tCS
tWPH
tWC
CA SA BA
RCDRMA
AA
DQ0-DQ15
OE
Read Data
NOTES:
1. AA = Address of address register
CA = Address of command register
RCD = Read Command
RMA = Address of memory to be read
BA = Address of BufferRAM to load the data
BD = Program Data
SA = Address of status register
2. “In progress” and “complete” refer to status register
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
Figure 36. Load Operation Timing
SWITCHING WAVEFORMS
VIL
Load Operations
Complete Da
tAAVDH
tAAVDS
AVD
INT
tAVDP
tRD
tVLWH
tWEA
bit
OneNAND512/OneNAND1GDDP FLASH MEMORY
90
Program Command Sequence (last two cycles)
A0:A15
WE
CE
CLK
tDS tDH
tCH
tWPL
tCS
tWPH
tWC
SA SA
In
Progress Complete
AA
DQ0-DQ15
OE
Read Status Data
NOTES:
1. AA = Address of address register
CA = Address of command register
PCD = Program Command
PMA = Address of memory to be programmed
BA = Address of BufferRAM to load the data
BD = Program Data
SA = Address of status register
2. “In progress” and “complete” refer to status register
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
Figure 37 . Program Operation Timing
SWITCHING WAVEFORMS
VIL
Program Operations
AVD
BA CA
PCDPMA BD
tAAVDH
tAAVDS
tPGM
INT
tAVDP tVLWH tWEA
bit
OneNAND512/OneNAND1GDDP FLASH MEMORY
91
Erase Command Sequence (last two cycles)
A0:A15
WE
CE
tDS
tDH
tCH
CA SA SA
In
Progress Complete
ECDEMA
AA
DQ0-DQ15
OE
Read Status Data
NOTES:
1. AA = Address of address register
CA = Address of command register
ECD = Erase Command
EMA = Address of memory to be erased
SA = Address of status register
2. “In progress” and “complete” refer to status register
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
Figure 38. Block Erase Operations
SWITCHING WAVEFORMS
tWPL
tCS
tWPH
tWC
CLK VIL
Erase Operation
AVD
tAAVDH
tAAVDS
tBERS
INT
tAVDP
tVLWH tWEA
bit
OneNAND512/OneNAND1GDDP FLASH MEMORY
92
0.10 MAX
0.45±0.05
0.32±0.05
0.9±0.10
63-FBGA-9.50x12.00 Units:millimeters
BOTTOM VIEW
TOP VIEW
A
C
E
B
D
F
0.80x9=7.20
A
0.80x11=8.80
63-
0.45±0.05
G
4.40
0.80
B
0.20
M
A B
(Datum A)
(Datum B)
2543 16
3.60
#A1 INDEX
H
9.50±0.10
12.00±0.10
#A1
12.00±0.10
0.80
9.50±0.10
12.00±0.10
OneNAND512 PACKAGE DIMENSIONS
OneNAND512/OneNAND1GDDP FLASH MEMORY
93
ORDERING INFORMATION
K F X XX 1 6 X 2 M - X X B
Samsung
OneNAND Memory
Device Type
G : Single Chip
H : Die Stack
Density
12 : 512Mb
1G : 1Gb
Operating Temperature Range
E = Extended Temp. (-30 °C to 85 °C)
I = Industrial Temp. (-40 °C to 85 °C)
Page Architecture
2 : 2KB Page
Version
1st Generation
Product Line desinator
B : Include Bad Block
D : Daisy Sample
Operating Voltage Range
Q : 1.8V(1.7 V to 1.95V)
D : 2.65V(2.4 V to 2.9V)
U : 3.3V(2.7V to 3.6V)
Package
D : FBGA(Lead Free)
Organization
x16 Organization