LESHAN RADIO COMPANY, LTD.
G15–1/2
MAXIMUM RATINGS MBD101 MMBD101LT1
Rating symbol value unit
Reverse Voltage vR7.0 Volts
Forward Power Dissipation pF
@TA=25 °C 280 225 mW
Derate above 25 °C 2.2 1.8 mW/ °C
Junction Temperature TJ+150 °C
Storage Temperature Range Tstg –55 to +150 °C
DEVICE MARKING
MMBD101LT1=4M
ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R 7.0 10 — Volts
(IR= 10µAdc)
Diode Capacitance CT— 0.88 1.0 pF
(VR= 0,f =1.0MHz,Note1)
Forward Voltage(1) V F— 0.5 0.6 Volts
(I F= 10mAdc)
Reverse Leakage IR— 0.02 0.25 µAdc
(VR= 3.0Vdc)
NOTE: MMBD101LT1 is also available in bulk packaging.Use MMBD101L as the device title to order this device in bulk.
1
3
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MMBD101LT1
Schottky Barrier Diodes
SILICON SCHOTTKY
BARRIER DIODES
3
CATHODE
1
ANODE
Designed primarily for UHF mixer applications but suitable also for use
in detector and ultra-fast switching circuits.Supplied in an inexpensive
plastic package for low-cost,high-volume consumer requirements.Also
available in Surface Mount package.
• Low Noise Figure—6.0dB Typ@1.0GHz
• Very Low Capacitance—Less Than 1.0pF@zero Volts
• High Forward Conductance—0.5volts(typ)@IF=10mA
LESHAN RADIO COMPANY, LTD.
G15–2/2
TYPICAL CHARACTERISTICS
(T A = 25°C unless noted)
MMBD101LT1
T A , AMBIENT TEMPERATURE (°C)
Figure 1. Reverse Leakage
V F , FOR WARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
V R , REVERSE VOLT AGE (VOLTS)
Figure 3. Capacitance P LO , LOCAL OSCILLATOR POWER (mW)
Figure 4. Noise Figure
Figure 5. Noise Figure Test Circuit
I F , FORWARD CURRENT (mA)
I R, REVERSE LEAKAGE ( µA)
UHF
NOISE SOURCE
H.P. 349A
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — C C and C T are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local
oscillator (LO) frequency of 1.0 GHz. The LO power
is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB,
f = 30 MHz, see Figure 5.
Note 3 — L S is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
NF, NOISE FIGURE (dB)
V
R
= 3.0Vdc
C, CAP ACIT ANCE (pF)
1.0
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01 30 40 50 60 70 80 90 100 110 120 130
100
10
10
0.10.3 0.4 0.5 0.6 0.7
1.0
0.9
0.8
0.7
0.6 0 1.0 2.0 3.0 4.0
11
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0 0.1 0.2 0.5 1.0 2.0 5.0 10
T A = 25°C
T A = –40°C
T A = 85°C
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(TEST CIRCUIT IN FIGURE 5)
DIODE IN
TUNED
MOUNT
LOCAL
OSCILLATOR
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
NOISE
FIGURE METER
H.P. 342A
