7MBR100UB120 IGBT Modules IGBT MODULE (U series) 1200V / 100A / PIM Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Symbol Inverter Collector-Emitter voltage Gate-Emitter voltage Continuous ICP 1ms Collector current Brake Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Condition VCES VGES IC Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque -IC -IC pulse PC VCES VGES IC Rating Tc=25C Tc=80C Tc=25C Tc=80C 1ms 1 device Continuous ICP 1ms PC V RRM V RRM IO IFSM I2t Tj Tstg Viso 1 device Tc=25C Tc=80C Tc=25C Tc=80C 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. http://store.iiic.cc/ 1200 20 100 75 200 150 100 200 390 1200 20 50 35 100 70 205 1200 1600 100 520 1352 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A W V V A W V V A A A 2s C C V V N*m 7MBR100UB120 IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Symbol Reverse current Forward on voltage ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM V FM Reverse current Resistance IRRM R B value B Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Brake Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Converter Turn-off time Thermistor Condition VCE=1200V, VGE =0V VCE=0V, VGE=20V VCE=20V, IC=100mA Tj=25C VGE=15V Tj=125C Ic=100A Tj=25C Tj=125C VGE =0V, VCE=10V, f=1MHz V CC=600V IC=100A VGE=15V RG= 9.1 Tj=25C Tj=125C Tj=25C Tj=125C VGE = 0 V IF=100A IF=100A VCE=1200V, VGE =0V VCE=0V, VGE=20V Tj=25C IC=50A Tj=125C VGE=15V Tj=25C Tj=125C V CC=600V IC=50A VGE=15V RG= 33 V R=1200V IF=100A VGE=0V V R=1600V T=25C T=100C T=25/50C terminal chip Characteristics Typ. Max. 1.0 200 6.5 8.5 2.40 2.85 2.75 1.90 2.35 2.25 8 0.53 1.20 0.43 0.60 0.03 0.37 1.00 0.07 0.30 2.50 2.90 2.75 2.00 2.40 2.25 0.35 1.0 200 2.25 2.65 2.60 2.00 2.40 2.35 0.53 1.20 0.43 0.60 0.37 1.00 0.07 0.30 1.0 1.55 1.90 1.40 1.0 5000 495 520 3375 3450 Unit Min. 4.5 465 3305 Characteristics Typ. Max. Unit Min. mA nA V V nF s V s mA nA V s mA V mA K Thermal resistance Characteristics Item Symbol Thermal resistance ( 1 device ) Contact thermal resistance Condition Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Rth(j-c) * Rth(c-f) - - 0.32 0.58 0.60 - 0.05 0.50 - * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] [Thermistor] [Inverter] 22(P1) 8 20(Gu) 1(R) 2(S) 3(T) 18(Gv) 19(Eu) 7(B) 14(Gb) 17(Ev) 4(U) 13(Gx) 16(Gw) 15(Ew) 5(V) 12(Gy) 6(W) 11(Gz) 10(En) 23(N) 24(N1) http://store.iiic.cc/ 9 C/W 7MBR100UB120 IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 200 200 VGE=20V 15V 12V 100 Collector current : Ic [A] Collector current : Ic [A] VGE=20V 15V 150 10V 50 12V 150 100 10V 50 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] 3 4 5 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 Tj=25C Collector - Emitter voltage : VCE [ V ] 200 Collector current : Ic [A] 2 Collector-Emitter voltage : VCE [V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Tj=125C 150 100 50 8 6 4 Ic=150A Ic=75A Ic=37.5A 2 0 0 0 1 2 3 4 5 5 Collector-Emitter voltage : VCE [V] Cies Cres 1.0 15 Coes 10 20 25 VGE VCE 0 0.1 0 20 [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=100A, Tj= 25C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 100.0 10.0 10 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Capacitance : Cies, Coes, Cres [ nF ] 1 30 Collector-Emitter voltage : VCE [V] http://store.iiic.cc/ 0 100 200 Gate charge : Qg [ nC ] 300 400 IGBT Module 7MBR100UB120 [ Inverter ] Switching time vs. Collector current (typ.) [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1, Tj= 25C Vcc=600V, VGE=15V, Rg=9.1, Tj=125C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 1000 ton tr toff 100 tf 1000 toff ton tr 100 tf 10 10 0 50 100 0 150 50 Collector current : Ic [ A ] [ Inverter ] [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, Ic=100A, VGE=15V, Tj= 25C Vcc=600V, VGE=15V, Rg=9.1 40 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 150 Switching time vs. Gate resistance (typ.) 10000 tr ton toff 1000 100 tf Eon(125C) 30 Eon(25C) 20 Eoff(125C) Eoff(25C) Err(125C) Err(25C) 10 10 0 1.0 10.0 100.0 1000.0 0 50 Gate resistance : Rg [ ] 100 150 [ Inverter ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=600V, Ic=100A, VGE=15V, Tj= 125C +VGE=15V,-VGE <= 15V, RG >= 9.1 ,Tj <= 125C 50 250 Eon 40 Collector current : Ic [ A ] 200 30 20 Eoff 10 150 100 50 Err 0 0 1.0 200 Collector current : Ic [ A ] [ Inverter ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 100 Collector current : Ic [ A ] 10.0 100.0 1000.0 Gate resistance : Rg [ ] 0 400 800 1200 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ IGBT Module 7MBR100UB120 [ Inverter ] [ Inverter ] Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (ty p.) chip Vcc=600V, VGE=15V, Rg=9.1 125 1000 T j=25C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 100 T j=125C 75 50 25 trr (125C) trr (25C) 100 Irr (125C) Irr (25C) 10 0 0 1 2 3 0 4 50 Forward on voltage : VF [ V ] 100 150 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) chip 125 T j=25C Forward current : IF [ A ] 100 T j=125C 75 50 25 0 0.0 0.5 1.0 1.5 2.0 2.5 Forward on voltage : VFM [ V ] [ Thermistor ] Transient thermal resistance (max.) Temperature characteristic (typ .) 1.000 100 FWD[Inverter] Conv.Diode IGBT[Inverter] 0.100 0.010 0.001 0.010 0.100 1.000 Resistance : R [ k ] Thermal resistanse : Rth(j-c) [ C/W ] IGBT[Brake] 10 1 0.1 Pulse width : Pw [ sec ] -60 -40 -20 0 20 40 60 80 100 T emperature [C ] http://store.iiic.cc/ 120 140 160 180 7MBR100UB120 IGBT Module [ Brake ] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip Tj= 125C / chip 80 80 12V VGE=20V 60 Collector current : Ic [A] Collector current : Ic [A] VGE=20V 15V 10V 40 20 15V 12V 60 40 10V 20 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] 1 2 [ Brake ] 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25C / chip 80 10 Collector - Emitter voltage : VCE [ V ] Tj=25C Collector current : Ic [A] 4 [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) 60 Tj=125C 40 20 8 6 4 Ic=70A Ic=35A Ic=17.5A 2 0 0 0 1 2 3 4 5 5 10 15 [ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=50A, Tj= 25C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 10.0 Cies 1.0 Cres Coes VGE VCE 0 0.1 10 25 [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 0 20 Gate - Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [V] Capacitance : Cies, Coes, Cres [ nF ] 3 Collector-Emitter voltage : VCE [V] 20 30 Collector-Emitter voltage : VCE [V] 0 50 100 Gate charge : Qg [ nC ] http://store.iiic.cc/ 150 200 IGBT Module 7MBR100UB120 Outline Drawings, mm http://store.iiic.cc/