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DHG 20 I 600 HA
preliminary
ns
Sonic Fast Recovery Diode
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
150
IA
V
F
2.24
R0.90 K/W
V
R
=
13
min.
20
t = 10 ms
Applications:
V
RRM
V600
25T
VJ
V°C=
T
VJ
°C=mA1.5
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=95°C
d =
P
tot
140 WT
C
°C=
T
VJ
150 °C-55
I
=
=600
20
20
T
VJ
=45°C
DHG 20 I 600 HA
600
V600
25
25
25
max. repe titiv e re verse vo l t a g e
reverse current
forward voltage
virt ua l j un ctio n temp e r ature
total power dissipation
max. forward surge current
Conditions Unit
3.15
T
VJ
°C=25
C
J
unction capacitance V = V; T
125
V
F0
V1.12T
VJ
=150°C
r
F
49
f = 1 MHz = °C25
mΩ
V2.20T
VJ
=°C
I
F
=A
V
20
3.23
I
F
=A40
I
F
=A40
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
8A
T
VJ
=°C
reverse recovery time
A12
40
60
ns
(50 Hz), sine
t
=40 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;20
25
T=125°C
VJ
-di
F
=A/µs450/dtt
rr
V
R
=V300
T
VJ
=°C25
T=125°C
VJ
µA
12400 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutatin
switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
125
IXYS reserves the right to change limits, conditions and dimensions.
©
20110526a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved