DHG 20 I 600 HA
preliminary
ns
Sonic Fast Recovery Diode
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
150
IA
V
F
2.24
R0.90 K/W
V
R
=
13
min.
20
t = 10 ms
Applications:
V
RRM
V600
25T
VJ
C=
T
VJ
°C=mA1.5
Package:
Part number
V
R
=
T
VJ
C
I
F
=A
V
T
C
=95°C
d =
P
tot
140 WT
C
°C=
T
VJ
150 °C-55
V
I
RRM
=
=600
20
20
T
VJ
=45°C
DHG 20 I 600 HA
V
A
600
V600
25
25
25
max. repe titiv e re verse vo l t a g e
reverse current
forward voltage
virt ua l j un ctio n temp e r ature
total power dissipation
max. forward surge current
Conditions Unit
3.15
T
VJ
°C=25
C
J
j
unction capacitance V = V; T
125
V
F0
V1.12T
VJ
=150°C
r
F
49
f = 1 MHz = °C25
m
V2.20T
VJ
C
I
F
=A
V
20
3.23
I
F
=A40
I
F
=A40
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
8A
T
VJ
C
reverse recovery time
A12
40
60
ns
(50 Hz), sine
t
rr
=40 ns
Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
TO-247
rIndustry standard outline
rEpoxy meets UL 94V-0
rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;20
25
T=125°C
VJ
-di
F
=A/µs450/dtt
rr
V
R
=V300
T
VJ
C25
T=125°C
VJ
µA
12400 pF
thermal resistance junction to case
thJC
rectangular 0.5
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutatin
g
switch
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
125
IXYS reserves the right to change limits, conditions and dimensions.
©
20110526a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DHG 20 I 600 HA
preliminary
I
RMS
A
per terminal 70
R
thCH
K/W0.25
M
D
Nm1.2
mounting torque 0.8
T
stg
°C150
storage temperature -55
Weight g6
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
F
C
N120
mount ing forc e with cl ip 20
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DHG 20 I 600 HA 504854Tube 30
000000
YYWWZ
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
Assembly Line
D
H
G
20
I
600
HA
Part number
Diode
Sonic Fast Recovery Diode
extreme fast
Single Diode
TO-247AD (2)
=
=
=
DHG20I600PA TO-220AC (2)
Similar Part Package
Marking on Product
DHG20I600HA
600
Voltage Class
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
IXYS reserves the right to change limits, conditions and dimensions.
©
20110526a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DHG 20 I 600 HA
preliminary
S
Ø
P
Ø
P1 D2
D1
E1
4
123
L
L1
2x
b2
2x
b
e
2x
E2
D
E
Q
A
A2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.430 BSC 10.92 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions.
©
20110526a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DHG 20 I 600 HA
preliminary
200 400 600 800
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
Q
rr
[µC]
I
F
[A]
V
F
[V] di
F
/dt [A/µs]
T
VJ
= 125°C
T
VJ
=25°C
10 A
20 A
40 A
Fig. 1 Typ. Forward current versus V
F
Fig. 2 Typ. reverse recov.charge Q
rr
vs. di/dt
200 300 400 500 600 700 800 900
4
8
12
16
20
I
RR
[A]
di
F
/dt [A/µs]
10 A
20 A
40 A
Fig. 3 Typ. peak reverse current I
RM
vs. di/dt
200 300 400 500 600 700 800 900
0
20
40
60
80
100
120
140
160
t
rr
[ns]
di
F
/dt [A/µs]
10 A
40 A
Fig. 4 Typ. recovery time t
rr
versus di/dt
Fig. 5 Typ. transient thermal impedance
0.001 0.01 0.1 1 10
0.1
1
Z
thJC
[K/W]
t
P
[s]
T
VJ
= 125°C
V
R
=300 V
20 A
T
VJ
= 125°C
V
R
=300 V
T
VJ
= 125°C
V
R
= 300 V
R
i
t
i
1 0.231 0.0005
2 0.212 0.004
3 0.19 0.02
4 0.267 0.15
IXYS reserves the right to change limits, conditions and dimensions.
©
20110526a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved