AUIRF5210S
VDSS -100V
RDS(on) max. 60m
ID -38A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications..
Features
Advanced Process Technology
P-Channel MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -38
A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -24
IDM Pulsed Drain Current -140
PD @TA = 25°C Maximum Power Dissipation 3.1 W
PD @TC = 25°C Maximum Power Dissipation 170
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 120
mJ
IAR Avalanche Current -23 A
EAR Repetitive Avalanche Energy 17 mJ
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
dv/dt Peak Diode Recovery dv./dt -7.4 V/ns
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.75
°C/W
RJA Junction-to-Ambient ( PCB Mount, steady state) 40
D2Pak
AUIRF5210S
S
D
G
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRF5210S D2-Pak Tube 50 AUIRF5210S
Tape and Reel Left 800 AUIRF5210STRL
G D S
Gate Drain Source
AUIRF5210S
2 2015-9-30
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax , starting TJ = 25°C, L = 0.46mH, RG = 25, IAS = -23A.(See Fig.12)
ISD -23A, di/dt -650A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
R
is measured at TJ of approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 60 m VGS = -10V, ID = -38A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Trans conductance 9.5 ––– ––– S VDS = -50V, ID = -23A
IDSS Drain-to-Source Leakage Current ––– ––– -50 µA VDS = -100V, VGS = 0V
––– ––– -250 VDS = -80V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 150 230
nC
ID = -23A
Qgs Gate-to-Source Charge ––– 22 33 VDS = -80V
Qgd Gate-to-Drain Charge ––– 81 120 VGS = -10V
td(on) Turn-On Delay Time ––– 14 –––
ns
VDD = -50V
tr Rise Time ––– 63 ––– ID = -23A
td(off) Turn-Off Delay Time ––– 72 ––– RG= 2.4
tf Fall Time ––– 55 ––– VGS = -10V
LD Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 2780 ––– VGS = 0V
Coss Output Capacitance ––– 800 ––– VDS = -25V
Crss Reverse Transfer Capacitance ––– 430 ––– ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– -38
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– -140 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C,IS = -23A,VGS = 0V
trr Reverse Recovery Time ––– 170 260 ns TJ = 25°C ,IF = -23A, VDD = -25V
Qrr Reverse Recovery Charge ––– 1180 1770 nC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
pF
AUIRF5210S
3 2015-9-30
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
0.1 110 100
-VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
60µs PULSE WIDTH
Tj = 25°C
-4.5V
0.1 110 100
-VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
-4.5V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
2 4 6 8 10 12 14
-VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = -50V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -38A
VGS = -10V
AUIRF5210S
4 2015-9-30
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
110 100
-VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 25 50 75 100 125 150
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-VGS, Gate-to-Source Voltage (V)
VDS= -80V
VDS= -50V
VDS= -20V
ID= -23A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
-ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
1 10 100 1000
-VDS, Drain-to-Source Voltage (V)
1
10
100
1000
-ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
AUIRF5210S
5 2015-9-30
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs. Case Temperature
25 50 75 100 125 150
TC , Case Temperature (°C)
0
5
10
15
20
25
30
35
40
-ID, Drain Current (A)
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
C
Ci= iRi
Ci= iRi
Ri (°C/W) i (sec)
0.128309 0.000069
0.244513 0.010024
0.377663 0.001772
AUIRF5210S
6 2015-9-30
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 14b. Gate Charge Test Circuit
Fig 14a. Gate Charge Waveform
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
450
500
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP -8.7A
-14A
BOTTOM - 23A
AUIRF5210S
7 2015-9-30
Fig 15. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs
AUIRF5210S
8 2015-9-30
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUF5210S
Lot Code
Part Number
IR Logo
D2Pak (TO-263AB) Part Marking Information
AUIRF5210S
9 2015-9-30
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
AUIRF5210S
10 2015-9-30
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level D2-Pak MSL1
ESD
Machine Model Class M4 (+/-425V)†
AEC-Q101-002
Human Body Model Class H2 ( /-4000V)†
AEC-Q101-001
Charged Device Model Class C5 ( /-1125V)†
AEC-Q101-005
RoHS Compliant Yes
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
9/30/2015 Updated datasheet with corporate template
Corrected ordering table on page 1.
† Highest passing voltage.
