REJ03G1620-0100 Rev.1.00 Mar 03, 2008
Page 1 of 7
RQK0607AQDQS
Silicon N Channel MOS FET
Power Switching REJ03G1620-0100
Rev.1.00
Mar 03, 2008
Features
• Low on-resistance
RDS(on) = 210 mΩ typ.(at VGS = 4.5 V, ID = 1.2 A)
• Low drive current
• High speed switching
• VDSS : 60 V and capable of 2.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK
)
R
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
D
2, 4
G1
S
3
Note: Marking is “AQ“.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±12 V
Drain current ID 2.4 A
Drain peak current ID(pulse) Note1 8 A
Body - drain diode reverse dr ain current IDR 2.4 A
Channel dissipation Pch Note2 1.5 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. When using the glass epo xy board (FR-4 40 × 40 × 1 mm)
RQK0607AQDQS
REJ03G1620-0100 Rev.1.00 Mar 03, 2008
Page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS +12 — — V IG = +100 µA, VDS = 0
Gate to source breakdown voltage V(BR)GSS –12 — — V IG = –100 µA, VDS = 0
Gate to source leak current IGSS — — +10 µA VGS = +10 V, VDS = 0
Gate to source leak current IGSS — — –10 µA VGS = –10 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 µA VDS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 0.4 — 1.4 V VDS = 10 V, ID = 1 mA
Drain to source on state resistance RDS(on) — 210 270 mΩ I
D = 1.2 A, VGS = 4.5 V Note3
Drain to source on state resistance RDS(on) — 250 350 mΩ I
D = 1.2 A, VGS = 2.5 V Note3
Forward transfer admittance |yfs| 2.8 4.4 — S ID = 1.2 A, VDS = 10 V Note3
Input capacitance Ciss — 170 — pF
Output capacitance Coss — 24 — pF
Reverse transfer capacitance Crss — 11 — pF
VDS = 10 V
VGS = 0
f = 1 MHz
Turn - on delay time td(on) — 10 — ns
Rise time tr — 33 — ns
Turn - off delay time td(off) — 26 — ns
Fall time tf — 5 — ns
ID = 1.2 A
VGS = 4.5 V
RL = 8.3 Ω
Rg = 4.7 Ω
Total gate charge Qg — 2 — nC
Gate to Source charge Qgs — 0.4 — nC
Gate to drain charge Qgd — 0.5 — nC
VDD = 10 V
VGS = 4.5 V
ID = 2.4 A
Body - drain diode for ward voltage VDF — 0.8 — V IF = 2.4 A, VGS = 0 Note3
Notes: 3. Pulse test
RQK0607AQDQS
REJ03G1620-0100 Rev.1.00 Mar 03, 2008
Page 3 of 7
Main Characteristics
10
4826
00
Ambient Temperature Ta (°C)
Channel Dissipation Pch (W)
Maximum Channel Power
Dissipation Curve Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Drain Current I
D
(A)
Typical Output Characteristics
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics (1)
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics (2)
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Gate to Source Cutoff Voltage vs.
Case Temperature
Case Temperature Tc (°C)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
2
4
*When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
0
2
4
6
8
10
01 234
0.00001
0.0001
0.001
0.01
1
0.1
0 0.5 1 1.5 2 0
0.5
1.0
1.5
2.0
–25 0 25 50 75 100 125 150
0.01
0.1
1
10
100
0.01 0.1 110010
0
1
0.5
2
1.5
0 25 50 75 100 125 150
0.001
6
8
10 µs
100 µs
1 ms
10 ms
100 ms
DC Operation
Ta = 25°C
1 Shot Pulse
Operation in this area
is limited by R
DS(on)
V
GS
= 0V
1.6V
1.8 V
2.0 V
3.0 V
2.2 V
2.4 V
2.6 V
2.8 V
4 V
5 V
7 V
10 V
Pulse Test
Tc = 25
°
C
Tc = 75°C
–25°C
V
DS
= 10 V
Pulse Test
25°C
V
DS
= 10 V
Pulse Test
Tc = 75°C
25°C
–25°C
V
DS
= 10 V
Pulse Test
I
D
= 10 mA
1 mA
0.1 mA
RQK0607AQDQS
REJ03G1620-0100 Rev.1.00 Mar 03, 2008
Page 4 of 7
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
VDS(on) (mV)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current ID (A)
Drain to Source on State Resistance
RDS(on) (mΩ)
Static Drain to Source on State Resistance
vs. Case Temperature (1)
Case Temperature Tc (°C)
Drain to Source on State Resistance
RDS(on) (mΩ)
Static Drain to Source on State Resistance
vs. Case Temperature (2)
Case Temperature Tc (°C)
Drain to Source on State Resistance
RDS(on) (mΩ)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
Forward Transfer Admittance |yfs| (S)
Zero Gate Voltage Drain current vs.
Case Temperature
Case Temperature Tc (°C)
Zero Gate Voltage Drain current IDSS (nA)
10
100
1000
0.1 1 10
–25 0 25 50 75 100 125 150
0.1
1
10
100
10000
1000
10 V 4.5 V
V
GS
= 2.5 V
Pulse Test
V
GS
= 0 V
V
DS
= 60 V
0
200
400
600
800
1000
0246810
Pulse Test
Tc = 25°C
100
200
300
400
500
600
–25 0 25 50 75 100 125 150 100
200
300
400
500
600
–25 0 25 50 75 100 125 150
1.2 A
1.2 A
2.0 A
2.0 A
I
D
= 2.4 A
I
D
= 2.4 A
Pulse Test
V
GS
=
4.5
V
Pulse Test
V
GS
= 2.5 V
0.1
1
10
0.01 0.1 101
–25°C
Tc = 75°C
25°C
Pulse Test
V
DS
= 10 V
1.2 A
2.0 A
I
D
= 2.4 A
0.5 A
1.0 A
Pulse Test
Tc = 25°C
0.5A
0.5A
1.0 A
1.0 A
RQK0607AQDQS
REJ03G1620-0100 Rev.1.00 Mar 03, 2008
Page 5 of 7
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Gate Charge Qg (nC)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Drain Current I
D
(A)
Switching Time t (ns)
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Ciss, Coss, Crss (pF)
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Ciss (pF)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Source to Drain Voltage V
SD
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
Case Temperature Tc (°C)
Body-Drain Diode Forward Voltage V
SDF
(V)
1
10
100
1000
010203040 6050
0.2
0.3
0.4
0.5
0.6
0.7
–25 0 25 50 75 100 125 150
0
8
4
4268 10
0
10000
1000
100
10
1
0.01 0.1 110
V
GS
= 4.5 V, V
DD
= 10 V
Rg = 4.7 Ω, duty ≤ 1 %
Tc = 25°C
tr
tf
td(off)
td(on)
00.4 0.8 1.2 1.6 2.0
4
2
6
8
Crss
Coss
V
GS
= 0 V
f = 1 MHz
Ciss
220
240
260
280
300
320
340
360
–10–8–6–4–20246810
200
0
10
12
16
40
20
0
60
80
ID = 2.4 A
Tc = 25°C
VDD = 50 V
25 V
10 V
VDD = 10 V
25 V
50 V
VGS = –2.5, –4.5, –10 V
0 V
Pulse Test
Tc = 25°C
4.5 V
10 V
1 mA
ID = 10 mA
VGS = 0
VDS = 0
f = 1MHz
2.5 V
RQK0607AQDQS
REJ03G1620-0100 Rev.1.00 Mar 03, 2008
Page 6 of 7
Vin Monitor
D.U.T.
Vin
4.5 V
RL
Rg
VDD
= 10 V
Vout
Monitor
Switching Time Test Circuit Switching Time Waveform
trtf
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
RQK0607AQDQS
REJ03G1620-0100 Rev.1.00 Mar 03, 2008
Page 7 of 7
Package Dimensions
4.5 ± 0.1
1.8 Max 1.5 ± 0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5 ± 0.1
4.25 Max
0.8 Min
φ1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Previous Code
PLZZ0004CA-A UPAK / UPAKV
MASS[Typ.]
0.050gSC-62
RENESAS CodeJEITA Package Code Unit: mm
Package Name
UPAK
Ordering Information
Part No. Quantity Shipping Container
RQK0607AQDQSTL-E 1000 pcs. φ178 mm reel, 12 mm Emboss taping
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