1
SURFACE MOUNTABLE
PHASE CONTROL SCR
Preliminary Data Sheet I2145 12/97
SAFE
IR
Series
10TTS08S
VT< 1.15V @ 6.5A
ITSM = 140A
V
RRM = 800V
Major Ratings and Characteristics
D2 PAK (SMD-220)
IT(AV) Sinusoidal 6.5 A
waveform
IRMS 10 A
VRRM/
VDRM 800 V
ITSM 140 A
VT@ 6.5 A, TJ = 25°C 1.15 V
dv/dt 150 V/µs
di/dt 100 A/µs
TJrange - 40 to 125 °C
Characteristics 10TTS08S Units
Output Current in Typical Applications
TA = 55°C, TJ = 125°C, footprint 300mm2
NEMA FR-4 or G10 glass fabric-based epoxy 2.5 3.5
with 4 oz (140µm) copper
Aluminum IMS, RthCA = 15°C/W 6.3 9.5 A
Aluminum IMS with heatsink, RthCA = 5°C/W 14.0 18.5
Applications Single-phase Bridge Three-phase Bridge Units
Description/Features
The 10TTS08S SAFE
IR
series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125° C junction
temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi-
cal package outlines.
Package Outline
2
10TTS08S SAFE
IR
Series
Preliminary Data Sheet I2145 12/97
VRRM, maximum VDRM , maximum IRRM/IDRM
Part Number peak reverse voltage peak direct voltage 1 25°C
VVmA
10TTS08S 800 800 1.0
V oltage Ratings
IT(AV) Max. Average On-state Current 6.5 A @ TC = 112° C, 180° conduction half sine wave
IT(RMS) Max. RMS On-state Current 10
ITSM Max. Peak One Cycle Non-Repetitive 120 A 10ms Sine pulse, rated VRRM applied, TJ = 125°C
Surge Current 140 10ms Sine pulse, no voltage reapplied, TJ = 125°C
I2t Max. I2t for fusing 72 A2s 10ms Sine pulse, rated VRRM applied, TJ = 125°C
100 10ms Sine pulse, no voltage reapplied, TJ = 125°C
I2t Max. I2t for fusing 1000 A2s t = 0.1 to 10ms, no voltage reapplied, TJ = 125°C
VTM Max. On-state Voltage Drop 1.15 V @ 6.5A, TJ = 25°C
rtOn-state slope resistance 17.3 mTJ = 125°C
VT(TO) Threshold Voltage 0.85 V
IRM/IDM Max.Reverse and Direct 0.05 mA TJ = 25 °C
Leakage Current 1.0 TJ = 125 °C
IHTyp. Holding Current 3 0 mA Anode Supply = 6V, Resistive load, Initial IT=1A
IL Max. Latching Current 5 0 mA Anode Supply = 6V, Resistive load
dv/dt Max. rate of rise of off-state Voltage 1 50 V/µs TJ = 25°C
di/dt Max. rate of rise of turned-on Current 100 A/µs
Absolute Maximum Ratings
Parameters 10TTS08S Units Conditions
VR = rated VRRM/ VDRM
3
10TTS08S SAFE
IR
Series
Preliminary Data Sheet I2145 12/97
Triggering
PGM Max. peak Gate Power 8. 0 W
PG(AV) Max. average Gate Power 2.0
+ IGM Max. paek positive Gate Current 1. 5 A
- VGM Max. paek negative Gate Voltage 1 0 V
IGT Max. required DC Gate Current 2 0 mA Anode supply = 6V, resistive load, TJ = - 65°C
to trigger 1 5 Anode supply = 6V, resistive load, TJ = 25°C
1 0 Anode supply = 6V, resistive load, TJ = 125°C
VGT Max. required DC Gate Voltage 1.2 V Anode supply = 6V, resistive load, TJ = - 65°C
to trigger 1 Anode supply = 6V, resistive load, TJ = 25°C
0.7 Anode supply = 6V, resistive load, TJ = 125°C
VGD Max. DC Gate Voltage not to trigger 0.2 TJ = 125°C, V DRM = rated value
IGD Max. DC Gate Current not to trigger 0.1 mA TJ = 125°C, VDRM = rated value
Parameters 10TTS08S Units Conditions
Switching
Parameters 10TTS08S Units Conditions
tgt Typical turn-on time 0. 8 µs TJ = 25°C
trr Typical reverse recovery time 3 TJ = 125°C
tqTypical turn-off time 10 0
TJMax. Junction Temperature Range - 40 to 125 °C
Tstg Max. Storage Temperature Range - 40 to 125 °C
Soldering Temperature 240 °C for 10 seconds (1.6mm from case)
RthJC Max. Thermal Resistance Junction 1.5 °C/W DC operation
to Case
RthJA Typ. Thermal Resistance Junction 40 °C/W
to Ambient (PCB Mount)**
wt Approximate Weight 2 (0.07) g (oz.)
T Case Style D2 Pak (SMD-220)
Thermal-Mechanical Specifications
Parameters 10TTS08S Units Conditions
**When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
4
10TTS08S SAFE
IR
Series
Preliminary Data Sheet I2145 12/97
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 1 - Current Rating Characteristics
105
110
115
120
125
01234567
30°60° 90° 120° 180°
Ma ximu m Al lowa b le Case Te mp er atu r e ( °C)
Conduction Angle
Average On-state Curr ent (A)
10TTS08
R (DC) = 1.5 K/W
thJC
105
110
115
120
125
024681012
DC
30°60° 90°120° 18
A verage On-state Current (A)
M ax imu m All owable C as e Te mperatu re ( °C)
Conduction Period
10TTS08
R (DC) = 1.5 K/W
thJC
0
1
2
3
4
5
6
7
8
01234567
RMS Limit
Con duct ion An g le
M ax imu m Av erage On - sta t e P ower Loss ( W)
Average On- state Curren t (A)
180°
120°
90°
60°
30°
10TTS08
T = 125°C
J
0
2
4
6
8
10
12
024681012
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Per iod
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
10TTS08
T = 125°C
J
60
70
80
90
100
110
120
130
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Co ndit ion And With
Rated V Applied Following Surge.
RRM
Pe ak Hal f Sine Wav e On-st a te Current ( A)
In iti a l T = 12 5 °C
@ 60 Hz 0. 0083 s
@ 50 Hz 0. 0100 s
J
10TTS08
50
60
70
80
90
100
110
120
130
140
150
0.01 0.1 1
Peak Half Sine Wa ve On-state C urr ent (A)
Pulse Train Duration (s)
Ma ximum Non R epetitive Surge Cu r ren t
V e rsus P u lse T r a in D u r a tion. Co ntr ol
Of Condu ction M a y Not Be Ma inta ined .
Initial T = 125°C
No Vo ltag e Reapplie d
Rated V Reapplied
RRM
J
10TTS08
5
10TTS08S SAFE
IR
Series
Preliminary Data Sheet I2145 12/97
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
1
10
100
1000
0.511.522.533.5
T = 25°C
J
Inst anta neous On -sta te Current (A )
Instantaneous On-st ate Voltage (V)
T = 125°C
J
10TTS08
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1
Squ are Wave Pul se Dura tion ( s)
St eady Sta te V alue
(DC Operati on)
Sin gle Pu lse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
thJC
Transient Thermal Im pedance Z (°C/W)
10TTS08
6
10TTS08S SAFE
IR
Series
Preliminary Data Sheet I2145 12/97
9G3A
10TTS08S
9512
EXAMPLE: THIS IS AN 10TTS08S INTERNATIONAL
RECTIFIER LOGO PART NUMBER
Marking Information
DATE CODE (YYWW)
YY = YEAR
WW = WEEK
ASSEMBLY
LOT CODE
Tape & Reel Information
Dimensions in millimeters and inches
TRR
FEED DIRECT ION
TRL
F EED D IRECTION
10.90 (0.429)
10.70 (0.421) 16.10 (0.634)
15.90 (0.626)
1.75 (0.069)
1.25 (0.049)
1.85 (0.073)
1.65 (0.065)
4.10 (0.161)
3.90 (0.153)
1.60 (0.063)
1.50 (0.059)
DIA.
1.60 (0.063)
1.50 (0.059)
DIA.
11.60 (0.457)
11.40 (0.449)
15.42 (0.609)
15.22 (0.601)
4.72 (0.186)
4.52 (0.178)
24.30 (0.957)
23.90 (0.941)
0.368 (0.0145)
0.342 (0.0135)
360 (1 4.173)
DIA. MAX.
26.40 (1.039)
24.40 (0.961)
13.50 (0.532)
12.80 (0.504)DIA.
60 (2.3 62)
DIA. MIN.
SMD- 220 Tape & Reel
When ordering, indica te the part
number, part orientation, and the
quantit y. Q uantit ies are in multiples
of 800 pieces per reel for both
TRL and TRR.
(K) (G)
(A)
7
10TTS08S SAFE
IR
Series
Preliminary Data Sheet I2145 12/97
Outline Table
(K) (G)
1 (K) Cathode
2 (A) Anode
3 (G) Gate (A)
10.1 6 (0.40)
REF.
8.89 (0.35)
4.57 (0.18)
4.32 (0.17)
0.61 (0.02) MAX.
5.08 (0 .20) REF.
1.32 (0.05)
1.22 (0.05)
13
6.47 (0.25)
6. 18 (0.24)
93°
REF.
2. 61 (0.10)
2. 32 (0.09)
5.28 (0.21)
4.78 (0.19)
4. 69 ( 0.18)
4.20 (0.16)
0.55 (0.02)
0.46 (0.02)
14. 73 (0.58)
15. 49 (0.61)
1.40 (0.055)
1.14 (0.045)
3X
0.93 (0.37)
0. 69 ( 0.27)
2X 11.4 3 (0.45)
17.7 8 (0 .70)
8.89 (0.3 5)
3. 81 (0.15)
2.08 (0.08)
2X
2. 54 ( 0. 10)
2X
MINIMUM RECOMMENDED FOOTPRINT
2
10 T T S 08 S TRL
Device Code
1524
3
Ordering Information Table
6
1- Current Rating, RMS value
2- Circuit Configuration
T = Single Thyristor
3- Package
T = TO-220AC
4- Type of Silicon
S = Converter Grade
5- Voltage code: Code x 100 = VRRM
6- S = TO-220 D2Pak (SMD 220) Version
7- Tape and Reel Option
TRL = Left Reel
TRR = Right Orientation Reel
Dimensions in millimeters and inches
(G) 3
2
(A)
1 (K)
7
8
10TTS08S SAFE
IR
Series
Preliminary Data Sheet I2145 12/97
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A Tel: (310) 322-3331 Fax: (310) 322-3332
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020 Fax: ++ 44 1883 733408
IR CANADA: 7231 Victoria Park Ave., Suite #201, Markham, Ontario L3R 2Z8 Tel: (905) 475 1897. Fax: (905) 475 8801
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 Fax: ++ 49 6172 965933
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 4510111 Fax: ++ 39 11 4510220
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 Fax: 81 3 3983 0642
IR SOUTHEAST ASIA: 315 Outram Road, # 10-02 Tan Boon Liat Building, SINGAPORE 0316. Tel: 65 221 8371. Fax: 65 221 8372.
http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice 12/97