Rev.4.00 Sep 07, 2005 page 1 of 8
2SK2940(L), 2SK2940(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1054-0400
(Previous: ADE-208-563B)
Rev.4.00
Sep 07, 2005
Features
• Low on-resistance
RDS =0.010 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
G
S
123
4
123
4
2SK2940(L),2SK2940(S)
Rev.4.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 45 A
Drain peak current ID(pulse)Note1 180 A
Body-drain diode reverse drain current IDR 45 A
Avalanche current IAP Note3 45 A
Avalanche energy EAR Note3 173 mJ
Channel dissipation Pch Note2 75 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1 mA, VDS = 10V
RDS(on) — 0.010 0.013 Ω I
D = 20 A, VGS = 10VNote4
Static drain to source on state
resistance RDS(on) — 0.015 0.025 Ω I
D = 20 A, VGS = 4V Note4
Forward transfer admittance |yfs| 24 40 — S ID = 20 A, VDS = 10V Note4
Input capacitance Ciss — 2200 — pF
Output capacitance Coss — 1050 — pF
Reverse transfer capacitance Crss — 320 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 25 — ns
Rise time tr — 200 — ns
Turn-off delay time td(off) — 320 — ns
Fall time tf — 240 — ns
ID = 20 A, VGS = 10 V,
RL = 1.5 Ω
Body–drain diode forward voltage VDF — 0.95 — V IF = 45 A, VGS = 0
Body–drain diode reverse
recovery time
trr — 60 — ns
IF = 45 A, VGS = 0
diF/ dt =50 A/ µs
Note: 4. Pulse test
2SK2940(L),2SK2940(S)
Rev.4.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Case Temperature T
C
(°C)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain Current I
D
(A)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
100
75
50
25
050 100 150 200
50
40
30
20
10
0
10 V
246810
6 V 50
40
30
20
10
012345
V
DS = 10 V
Pulse Test
0.1 0.3 1 310 30 100
1000
300
100
30
10
3
1
0.3
0.1
DC Operation (Tc = 25°C)
Ta = 25°C
10 µs
100 µs
1 ms
PW = 10 ms (1shot)
Operation in
this area is
limited by RDS(on)
3.5 V
4 V
5 V
3 V
V
GS
= 2.5 V
Tc = 75°C
25°C
–25°C
Pulse Test
0.5
0.4
0.3
0.2
0.1
048
12 16 20
Pulse Test
ID = 20 A
10 A
5 A
1 5 20 10021050
100
20
1
5
2
10
50
V
GS
= 4 V
10 V
Pulse Test
2SK2940(L),2SK2940(S)
Rev.4.00 Sep 07, 2005 page 4 of 8
Case Temperature T
C
(°C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
40
32
24
16
8
–40 0 40 80 120 160
0
V
GS
= 4 V
10 V
5, 10, 20 A
0.1 0.3 1 3 10 30 100
500
100
200
20
50
10
2
5
1
0.5
25°C
Tc = –25°C
75°C
Pulse Test V
DS
= 10 V
Pulse Test
I
D
= 20 A 10 A 5 A
0.1 0.3 1 3 10 30 100 01020304050
10000
2000
5000
1000
100
200
500
100
80
60
40
20
0
20
16
12
8
4
40 80 120 160 200
0
0.1 0.2 1 2 10 20 100
I
D
= 45 A
V
GS
V
DS
V
DD
= 50 V
25 V
10 V
100
20
50
10
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
50
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
V
DD
= 10 V
25 V
50 V
1000
200
500
100
20
10
50
0.5 5 50
V
GS
= 10 V, V
DD
= 30 V
PW = 10 µs, duty < 1 %
tf
tr
td(on)
td(off)
2SK2940(L),2SK2940(S)
Rev.4.00 Sep 07, 2005 page 5 of 8
Pulse Width PW (S)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
15 V
0
ID
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
Avalanche Test Circuit Avalanche Waveform
50
40
30
20
10
00.4 0.8 1.2 1.6 2.0
200
160
120
80
40
25 50 75 100 125 150
0
Pulse Test
V
GS
= 0, –5 V
10 V
5 V
I
AP = 45 A
V
DD = 25 V
duty < 0.1 %
Rg > 50 Ω
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 1.67°C/W, Tc = 25°C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK2940(L),2SK2940(S)
Rev.4.00 Sep 07, 2005 page 6 of 8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DD
= 30 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
Switching Time Test Circuit Switching Time Waveforms
2SK2940(L),2SK2940(S)
Rev.4.00 Sep 07, 2005 page 7 of 8
Package Dimensions
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.37 ± 0.2
Package Name
PRSS0004AE-A LDPAK(L) / LDPAK(L)V
MASS[Typ.]
1.40g
RENESAS CodeJEITA Package Code
Unit: mm
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Package Name
Unit: mm
2SK2940(L),2SK2940(S)
Rev.4.00 Sep 07, 2005 page 8 of 8
Ordering Information
Part Name Quantity Shipping Container
2SK2940L-E 5000 pcs Box (Sack)
2SK2940STL-E 1000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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