©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
KSC5027F
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C u nless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
hFE Classifi cation
Symbol Parameter Value Units
VCBO Collector-Base Voltage 1100 V
V CEO Collector-Emitter Voltage 800 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current (DC) 3 A
ICP Collector Current (Pulse) 10 A
IB Base Current 1.5 A
PC Collector Dissipation (TC=25°C) 40 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parame ter Test C ondition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V
BVCEO Collector-Emitter Sustaining Voltage IC = 5mA, IB = 0 800 V
BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V
VCEX (sus) Collector-Emitter Sustaining Voltage I C = 1.5A, IB1 = -IB2 = 0.3A
L = 2mH, Clamped 800 V
ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA
IEBO Emitter Cut-o ff Current VEB = 5V, IC = 0 10 µA
hFE1
hFE2
DC Current Gain VCE = 5V, IC = 0.2A
VCE = 5V, IC = 1A 10
8 40
VCE(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 2 V
VBE(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V
Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 60 pF
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.2A 15 MHz
tON Turn On Time V CC = 400V
IC = 5IB1 = -2.5IB2 = 2A
RL = 200Ω
0.5 µs
tSTG St orage Time 3 µs
tF Fall Time 0.3 µs
Classification N R O
hFE1 10 ~ 20 15 ~ 30 20 ~ 40
KSC5027F
High Voltage and High Reliability
• High Speed Switching
• Wide SOA
1
1.Base 2.Collector 3.Emitter
TO-220F
©2002 Fairchild Semiconductor Corporation
KSC5027F
Rev. B1, December 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Switching Time Figure 6. Safe Operating Area
012345678910
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
IB = 250mA
IB = 150mA
IB = 200mA
IB = 100mA
IB = 60mA
IB = 80mA
IB = 50mA
IB = 40mA
IB = 30mA
IB = 20mA
IB = 10mA
IB = 0
IC[A], COLLECTOR CURRENT
VCE[V], CO L L E C TOR -E MIT TER VOLTAGE
0.01 0.1 1 10
1
10
100
1000 VCE = 5V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10 IC = 5 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0 VCE = 5V
IC[A], COLLECTOR CURRENT
VBE[V ], BASE-EMITTER VOLTAGE
0.1 1 10
0.01
0.1
1
10
VCC = 400V
5.IB1 = -2.5 .IB2 = IC
tF
tON
tSTG
tON, tSTG, tF [µs], TIME
IC[A], COLLECTOR CU RRENT
1 10 100 1000 10000
1E-3
0.01
0.1
1
10
100
100µs
1ms
10ms
DC
ICMAX.(Pulse)
ICMAX(Continuous)
IC[A], COLLECTO R CURRENT
VCE[V], COLLEC TO R- E MI T TE R VO LTA G E
©2002 Fairchild Semiconductor Corporation
KSC5027F
Rev. B1, December 2002
Typical Characteristics (Continued)
Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating
10 100 1000 10000
0.01
0.1
1
10
100 IB2 = -0. 3A
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 255075100125150175
0
10
20
30
40
50
60
70
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Dimensions
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
KSC5027F
Dimensions in Millimeters
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30
±0.10
15.80
±0.20
15.87
±0.20
6.68
±0.20
9.75
±0.30
4.70
±0.20
10.16
±0.20
(1.00x45°)
2.54
±0.20
0.80
±0.10
9.40
±0.20
2.76
±0.20
0.35
±0.10
ø3.18
±0.10
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
0.50
+0.10
–0.05
TO-220F
©2002 Fairchild Semiconductor Corporation Rev. I1
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