Parameter Max. Units
VDS Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 2.7
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 2.2 A
IDM Pulsed Drain Current 11
PD @TA = 25°C Power Dissipation 0.96
PD @TA = 70°C Power Dissipation0.62
Linear Derating Factor 7.7 mW/°C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
1/13/03
Parameter Max. Units
RθJA Maximum Junction-to-Ambient130 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com 1
IRF5852
HEXFET® Power MOSFET
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDS(on)
reduction enables an increase in current-handling
capability.
Description
lUltra Low On-Resistance
lDual N-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lLow Gate Charge
PD - 93999A
TSOP-6 Top View
VDSS RDS(on) max (W) ID
20 V 0.090@VGS = 4.5V 2.7A
0.120@VGS = 2.5V 2.2A
S2
G2
G1
3
2
1
4
5
6D
1
D
2
S
1
IRF5852
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 0.96A, VGS = 0V
trr Reverse Recovery Time ––– 25 38 ns TJ = 25°C, IF = 0.96A
Qrr Reverse Recovery Charge ––– 6.5 9.8 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
11
0.96
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– – –– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.090 VGS = 4.5V, I D = 2.7A
––– ––– 0.120 VGS = 2.5V, I D = 2.2A
VGS(th) Gate Threshold Voltage 0.60 ––– 1.25 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 5.2 ––– ––– S VDS = 10V, ID = 2.7A
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– – –– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
QgTotal Gate Charge –– – 4 .0 6.0 I D = 2.7A
Qgs Gate-to-Source Charge ––– 0.95 ––– nC V DS = 16V
Qgd Gate-to-Drain ("Miller") Charge ––– 0.88 ––– VGS = 4.5V
td(on) Turn-On Delay Time – –– 6. 6 ––– VDD = 10V
trRise Time ––– 1.2 ––– ID = 1.0A
td(off) Turn-Off Delay Time ––– 15 ––– R G = 6.2Ω
tfFall Time ––– 2.4 ––– VGS = 4.5V
Ciss Input Capacitance ––– 400 ––– V GS = 0V
Coss Output Capacitance ––– 48 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 32 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
S
D
G
IRF5852
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.1
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
0.1
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
0.1
1
10
100
1.5 2.0 2.5 3.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
2.7A
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF5852
4www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
1 10 100
0
100
200
300
400
500
600
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
02468
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D2.7A
V = 10V
DS
V = 16V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
IRF5852
www.irf.com 5
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangul ar Pulse Durat ion ( sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
4.5V
+
-
VDD
IRF5852
6www.irf.com
Fig 12. Typical On-Resistance Vs. Drain
Current
Fig 11. Typical On-Resistance Vs. Gate
Voltage
2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, G ate -to -Source Voltage (V )
0.06
0.08
0.10
0.12
0.14
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 2. 7A
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
4.5 V
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
024681012
ID , Drain Current (A)
0.00
0.10
0.20
0.30
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = 4.5V
VGS = 2.5V
IRF5852
www.irf.com 7
Fig 14. Threshold Voltage Vs. Tempera-
ture Fig 15. Typical Power Vs. Time
-75 -50 -25 025 50 75 100 125 150
TJ , Temperatur e ( °C )
0.4
0.6
0.8
1.0
1.2
VGS(th) , Variace ( V )
ID = 250µA
0.001 0.010 0.100 1.000 10.000
Time (sec)
0
4
8
12
16
20
24
Power (W)
IRF5852
8www.irf.com
TSOP-6 Package Outline
TSOP-6 Tape & Reel Information
IRF5852
www.irf.com 9
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 1/03
TSOP-6 Part Marking Information
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR Y EAR
01
02
03
04
24
WYEAR Y
A2001 1 B2002 2 C2003 3 D2004 4
X
1999 0
WW = (27-52) I F PRECEDED BY A LETTER
WEEK
27
28
29
30
50
WYEAR
A2001 A B2002 B C2003 C D2004 D
X
J
2005
1996
1997
1998
1999
2000
E
F
G
H
K
Y
2005
1996
1997
1998
2000 9
8
7
6
5
PART NUMBER
TOP
WORK
WEEK
WORK
3A = SI3443DV
PART N UMBER CODE REFEREN CE:
25 Y
51 Y
26 Z
3B = IRF5800
3C = IRF5850
3D = IRF5851
3E = IRF5852
3J = IRF5806
3I = IRF5805
DATE
CODE
DATE CODE EXAMPLES:
YWW = 9603 = 6C
YWW = 9632 = FF
WAFER LOT
NUMBER CODE
BOTTOM
EXAMPLE: T HIS IS AN SI3443DV
Notes: This part markin g informatio n ap plie s t o de vice s p roduc ed before 02/2 6/2001
50
51
30
27
28
29
WE E K
WORK
W = (27-52) IF PRECEDED BY A LETTER
25
26
24
03
02
04
WE E K
WORK
01
W = (1-2 6) IF PRECEDED BY LA ST DIGIT OF CALENDAR YEAR
PART NUMBER CODE REFERENCE:
L = IRF 5804
M = IRF5803
N = IRF5820
C = IRF5850
J = IRF5806
K = IRF5810
E = IRF5852
D = IRF5851
I = I RF5805
B = IRF5800
A = SI3443DV
H1998
2000
1999 K
J
B2002
2005
1996
1997
2003
2004 E
F
G
C
D
2001
YEAR
A
Y
PART NUMBER
TOP
2001 1
Y = YEA R
CODE
LOT
W = WEE K
71997
2000
1999
1998
0
9
8
2004
2005
1996
2002
2003 4
6
5
2
3
YEAR Y
Y
X
B
C
D
A
W
A
X
Z
Y
D
B
C
W
Notes: Thi s part mar ki ng infor mation appl i es to devices produced after 02/26/2001
