a <> y BF 414 Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in common base configuration Besondere Merkmale: Features: @ Kleine RUckwirkungskapazitat @ Small feedback capacitance @ GroBer Intermodulationsabstand @ Large signal to intermodulation ratio @ Rauschma 2,8 dB @ Noise figure 2.8 dB Vorlaufige technische Daten - Preliminary specifications Abmessungen in mm Dimensions in mm Normgehause Case 10 A3 DIN 41868 JEDEC TO 92 Z Gewicht - We/ght max. 0,2 g Absolute Grenzdaten Absolute maximum ratings Kollektor-Basis-Sperrspannung -UcBo 40 V Collector-base voltage Koliektor-Emitter-S perrspannung -UcEO 30 V Colfector-emitter voltage Emitter-Basis-Sperrspannung -Uepo 4 Vv Emitter-base voltage Koilektorstrom -le 25 mA Collector current Basisstrom -ip 3 mA Base current Gesamtverlustleistung Total power dissipation tamb = 45C Prot 300 mW Sperrschichttemperatur 7 150 C Junction temperature Lagerungstemperaturbereich stg -55 ... +150 C Storage temperature range B 2/V.2.513/0875A 1 257 BF 414 Warmewiderstand Thermal resistance Sperrschicht-Umgebung Junction ambient Statische KenngrBen DC characteristics lamb = 25C Kollektorreststrom Collector cut-off current - Ucs =20V Kollektor-Basis-Durchbruchspannung Collector-base breakdown voltage ~I = 10pA Kollektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage -lo =2mA Emitter-Basis-Durchbruchspannung Emitter-base breakdown voltage le = 10 pA Kollektor-Basis-Gleichstromverhaltnis DC forward current transfer ratio -UoE = 10V, -Io =1mA Dynamische KenngrBen AC characteristics lamb = 25C Transitfrequenz Gain bandwidth product - Upp = 10 V, f = 100 MHz, ~Jg = 1 mA Ig = 5mA Ruckwirkungskapazitat Feedback capacitance -Uop = 10V, f = 100 MHz RauschmaB in Basisschaltung Noise figure in common base configuration Rg = 1509, f = 100 MHz, ~Ig = 1mA -I =3mA Ig =5mA 1) 'p ) 7 0,01, tp = 0,3 ms 258 Min. RihJaA ~!eBo UprycBo 49 ~UBRycEO') 30 ~ UBR)EBO 4 AgE 30 fy ST Curb Typ. 80 400 560 0,09 2,2 2,8 Max. 350 C/W 60 nA MHz MHz pF dB dB dB BF 414 800 MHz 600 400 200 71386 Th f = 100 MHz lamb = 28 C 0 4 6 8 mA 10 le _ Ugg =10V f = 100 MHz lamb = 25 C 4 6 &8mA -lo ~ ~Ugp = 10V f= 100 MHz tamb = 25 C 100 Q f = 100 MHz tamb = 25 C Ugg =10V v 259