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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ168
High Speed Switching Applications
Analog Switch Applications
Interface Applications
· Excellent switching time: ton = 14 ns (typ.)
· High forward transfer admittance: |Yfs| = 100 mS (min)
@ID = −50 mA
· Low on resistance: RDS (ON) = 1.3 Ω (typ.) @ ID = −50 mA
· Enhancement-mode
· Complementary to 2SK1062
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS -60 V
Gate-source voltage VGSS ±20 V
DC ID -200
Drain current
Pulse IDP -800
mA
Drain power dissipation (Ta = 25°C) PD 200 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg -55~150 °C
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
Marking
Unit: mm
JEDEC ―
JEITA SC-59
TOSHIBA 2-3F1F
Weight: 0.012 g (typ.)
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Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±10 V, VDS = 0 ¾ ¾ ±100 nA
Drain cut-off current IDSS V
DS = -60 V, VGS = 0 ¾ ¾ -10 mA
Drain-source breakdown voltage V (BR) DSS ID = -1 mA, VGS = 0 -60 ¾ ¾ V
Gate threshold voltage Vth V
DS = -10 V, ID = -1 mA -2 ¾ -3.5 V
Forward transfer admittance ½Yfs½ V
DS = -10 V, ID = -50 mA 100 ¾ ¾ mS
Drain-source ON resistance RDS (ON) I
D = -50 mA, VGS = -10 V ¾ 1.3 2.0 W
Drain-source ON voltage VDS (ON) I
D = -50 mA, VGS = -10 V ¾ -65 -100 mV
Input capacitance Ciss V
DS = -10 V, VGS = 0, f = 1 MHz ¾ 73 85 pF
Reverse transfer capacitance Crss V
DS = -10 V, VGS = 0, f = 1 MHz ¾ 15 22 pF
Output capacitance Coss V
DS = -10 V, VGS = 0, f = 1 MHz ¾ 48 60 pF
Rise time tr ¾ 8 ¾
Turn-on time ton ¾ 14 ¾
Fall time tf ¾ 35 ¾
Switching time
Turn-off Time toff
VIN: tr, tf < 5 ns
D.U.
<
=
1% (Zout = 50 W) ¾ 100
ns
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000707EA
A
RESTRICTIONS O N PRODUCT USE
