IXTT2N170D2 IXTH2N170D2 Depletion Mode MOSFETs VDSX ID(on) RDS(on) = > 1700V 2A 6.5 N-Channel TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1700 V VDGX TJ = 25C to 150C, RGS = 1M 1700 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25C 568 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 C C 1.13 / 10 Nm/lb.in. 4 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 G D D (Tab) S G = Gate S = Source D = Drain Tab = Drain Features * Normally ON Mode * International Standard Packages * Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 1700 VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) VGS = 0V, ID = 1A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 - 2.0 * Easy to Mount * Space Savings * High Power Density V - 4.0 100 nA 25 A 500 A TJ = 125C (c) 2012 IXYS CORPORATION, All Rights Reserved 6.5 2 Applications V * * * * * * Audio Amplifiers Start-Up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads A DS100418B(02/12) IXTT2N170D2 IXTH2N170D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 30V, ID = 1A, Note 1 1.4 Ciss Coss VGS = -10V, VDS = 25V, f = 1MHz 2.2 S 3650 pF 206 pF 80 pF 28 ns 58 ns 33 ns 106 ns 110 nC 12 nC 60 nC 0.21 0.22 C/W C/W Crss td(on) tr td(off) tf Resistive Switching Times VGS = 5V, VDS = 850V, ID = 1A RG = 2 (External) Qg(on) Qgs VGS = +5V, VDS = 850V, ID = 1A Qgd RthJC RthCS TO-247 TO-268 Outline Terminals: 1 - Gate 3 - Source 2,4 - Drain Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 1700V, ID = 120mA, TC = 75C, Tp = 5s 204 W TO-247 Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VSD IF = 2A, VGS = -10V, Note 1 0.75 trr IRM QRM IF = 2A, -di/dt = 100A/s VR = 100V, VGS = -10V 2.8 45.0 63.0 1.30 V 1 2 P 3 s A C e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Note 1. Pulse test, t 300s, duty cycle, d 2%. 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT2N170D2 IXTH2N170D2 Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 2 5.5 VGS = 5V 1V 4.5 0V 1.5 0.5V 4 ID - Amperes ID - Amperes VGS = 5V 1V 5 - 0.5V 1 -1V 3.5 0V 3 2.5 2 - 0.5V 1.5 0.5 1 -1.5V - 2V 0 0 1 2 3 4 5 6 7 8 -1V 0.5 -1.5V 0 9 10 11 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. Drain Current @ T J = 25C 2 1.E+01 VGS = 5V 0V - 0.8V - 1.0V - 1.2V 1.E+00 ID - Amperes ID - Amperes VGS = - 0.6V - 0.5V 1.5 -1V 1 0.5 - 1.4V 1.E-01 - 1.6V - 1.8V 1.E-02 -1.5V - 2.0V - 2V 1.E-03 0 0 4 8 12 16 20 24 0 28 10 20 30 40 VDS - Volts 50 60 70 80 90 VDS - Volts Fig. 5. Drain Current @ T J = 100C Fig. 6. Dynamic Resistance vs. Gate Voltage 100,000 1.E+01 VDS = 70V - 30V TJ = 25C - 1.0V 10,000 - 1.2V R O - Ohms ID - Amperes VGS = - 0.8V 1.E+00 - 1.4V - 1.6V - 1.8V 1.E-01 TJ = 100C 1,000 - 2.0V 1.E-02 0 10 20 30 40 50 60 VDS - Volts (c) 2012 IXYS CORPORATION, All Rights Reserved 70 80 90 100 -2.0 -1.8 -1.6 -1.4 -1.2 VGS - Volts -1.0 -0.8 -0.6 IXTT2N170D2 IXTH2N170D2 Fig. 7. Dynamic Resistance vs. Gate Voltage Fig. 8. Normalized RDS(on) vs. Junction Temperature 1.E+11 2.8 VDS = 1300V - 300V VGS = 0V TJ = 25C 2.4 R DS(on) - Normalized 1.E+10 R O - Ohms 1.E+09 1.E+08 TJ = 100C 1.E+07 1.E+06 I D = 1A 2.0 1.6 1.2 0.8 1.E+05 0.4 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 -2.6 -2.4 -50 -25 0 VGS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 9. RDS(on) Normalized to ID = 1A Value vs. Drain Current Fig. 10. Input Admittance 3 2.4 VDS = 30V VGS = 0V 2.2 5V TJ = 125C 2.5 ---- 2 1.8 ID - Amperes R DS(on) - Normalized 2.0 1.6 1.4 TJ = 125C 25C - 40C 1.5 1 1.2 TJ = 25C 0.5 1.0 0 0.8 0 0.5 1 1.5 2 2.5 3 3.5 -3 4 -2.5 -2 -1.5 -1 -0.5 0 VGS - Volts ID - Amperes Fig. 12. Normalized Breakdown and Threshold Voltages vs. Junction Temperature Fig. 11. Transconductance 5 1.3 VDS = 30V TJ = - 40C 4 VGS(off) @ VDS = 25V 1.2 BV / VGS(off) g f s - Siemens 25C 3 125C 2 1 1.1 BVDSX @ VGS = - 5V 1.0 0.9 0 0 0.5 1 1.5 2 2.5 3 3.5 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.8 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXTT2N170D2 IXTH2N170D2 Fig. 14. Capacitance Fig. 13. Forward Voltage Drop of Intrinsic Diode 10,000 6 VGS = -10V Capacitance - PicoFarads 5 IS - Amperes 4 3 TJ = 125C 2 TJ = 25C Ciss 1,000 Coss 100 Crss 1 f = 1 MHz 0 10 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 5 10 15 20 25 30 35 40 Fig. 17. Maximum Transient Thermal Impedance VDS - Volts VSD - Volts 1 Fig. 16. Maximum Transient Thermal Impedance Fig. 15. Gate Charge 0.4 5 hv j v VDS = 850V 4 I D = 1A 3 0.1 I G = 10mA 1 Z(th)JC - C / W VGS - Volts 2 0 -1 -2 0.01 -3 -4 -5 0 20 40 60 80 100 120 0.001 0.00001 0.0001 0.001 QG - NanoCoulombs Fig. 17. Forward-Bias Safe Operating Area 0.1 10 @ T C = 75C 10 25s 100s RDS(on) Limit RDS(on) Limit 1ms ID - Amperes ID - Amperes 1 Fig. 18. Forward-Bias Safe Operating Area @ T C = 25C 10 0.01 Pulse Width - Seconds 1 10ms TJ = 150C 1ms 1 10ms TJ = 150C 100ms TC = 25C Single Pulse 100s TC = 75C Single Pulse DC 0.1 DC 0.1 10 100 1,000 VDS - Volts (c) 2012 IXYS CORPORATION, All Rights Reserved 10,000 10 100 1,000 100ms 10,000 VDS - Volts IXYS REF: T_2N170D2(7N) 11-29-11