A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 °C NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVDSS ID = 10 mA 65 V
IDSS VDS = 28 V VGS = 0 V 2.0 mA
IGSS VDS = 0 V VGS = ±20 V 1.0 µ
µµ
µA
VGS(th) VDS = 10 V ID = 10 mA 2.0 4.5 V
gfs VDS = 10 V ID = 1.5 A 1.2 1.9 S
Ciss
Coss
Crss VDS = 28 V VGS = 0 V f = 1.0 MHz 125
75
7.0
pF
PG
η
ηη
ηD VDS = 28 V IDQ = 25 mA Pout = 30 W
f = 150 MHz 13
50 16
60 dB
%
ψ
ψψ
ψ VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADATI O N IN OUTPUT POWER
RF POWER MOSFET
N-Channel Enhancement Mode
BLF245
PACKAGE STYLE .380 4L FLG
1 = DRAIN 2 = GATE 3&4 = SOURCE
DESCRIPTION:
The ASI BLF245 is a vertical D-MOS
transistor designed for large signal
amplif ier applications in the VHF
fr equency range.
FEATURES INCLUDE:
• PG = 13 dB Typical at 175 MHz
• 30:1 Load VSWR Capabilit y
• Omnigold™ metalization system
MAXIMUM RATINGS
ID 6.0 A
VDS 65 V
VGS ±20 V
PDISS 68 W @ TC = 25 °C
TJ -65 °C to +150 °C
TSTG -65 °C to +200 °C
θ
θθ
θJC 1.8 °C/W
