MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBTA64 Features * This device is designed for applications requiring extremely high current gain at currents to 800mA. Marking Code: MMBTA64=2V * PNP Darlington Transistor C Pin Configuration Top View B Maximum Ratings* Symbol V CES V CBO V EBO IC TJ TSTG 2V SOT-23 E A Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Rating 30 30 10 1.2 -55 to +150 -55 to +150 Unit V V V A O C O C Max 350 2.8 357 Unit mW mW/ OC O C/W D C F B E Thermal Characteristics Symbol PD RJA Rating Total Device Dissipation* Derate above 25OC Thermal Resistance, Junction to Ambient G H DIMENSIONS Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 30 --- --- 100 nAdc --- 100 nAdc OFF CHARACTERISTICS V(BR)CES ICBO IEBO Collector-Emitter Breakdown Voltage (IC=100uAdc, IB =0) Collector Cutoff Current (V CB=30Vdc, IE =0) Emitter Cutoff Current (VEB =10Vdc, IC=0) Vdc ON CHARACTERISTICS * * DIM A B C D E F G H J K INCHES MIN MAX .110 .120 .083 .098 .047 .055 .035 .041 .070 .081 .018 .024 .0005 .0039 .035 .044 .003 .007 .015 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout hFE DC Current Gain (V CE=5.0Vdc, IC=10mAdc) 10000 ----(V CE=5.0Vdc, IC=100mA) 20000 --VCE(sat) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =0.1mAdc) --1.5 Vdc VBE(sat) Base-Emitter On Voltage (IC=100mAdc, V CE=5.0Vdc) --2.0 Vdc fT Current-Gain--Bandwidth Product (IC=10mAdc, V CE=5.0Vdc, f=100MHz) 125 --MHz * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** Pulse Test: Pulse Width<300us, Duty Cycle<2.0% Note: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. J .031 .800 .035 .900 .079 2.000 inches mm .037 .950 .037 .950 www.mccsemi.com Revision: 2 2003/04/30 MCC 50 Collector-Emitter Saturation Voltage vs Collector Current 1.6 VCE = 5V 40 = 1000 1.2 125 C 30 - 40 C 0.8 20 25 C 10 VBESAT- BASE EMITTER VOLTAGE (V) VCESAT- COLLECTOR EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current - 40 C 0 0.01 2 25 C 125 C 0.4 0.1 I C - COLLECTOR CURRENT (A) 1 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 P 61 P 61 Base-Emitter Saturation Voltage vs Collector Current Base Emitter ON Voltage vs Collector Current = 1000 1.6 - 40 C 25 C 1.2 125 C 0.8 0.4 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 VBEON - BASE EMITTER ON VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN (K) MMBTA64 2 1.6 - 40 C 25 C 1.2 125 C 0.8 V CE = 5V 0.4 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 P 61 Input and Output Capacitance vs Reverse Bias Voltage 100 16 V f = 1.0 MHz = 15V CB CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs. Ambient Temperature 10 1 0.1 12 8 C ib 4 C ob 0.01 25 50 75 100 T A- AMBIENT TEMPERATURE ( C) 125 0 0.1 1 10 REVERSE VOLTAGE (V) 100 Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (W) 1 0.75 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 www.mccsemi.com Revision: 2 2003/04/30