VISHAY
1N4148WS
Document Number 85751
Rev. 1.3, 08-Jul-04
Vishay Semiconductors
www.vishay.com
1
17431
Small Signal Fast Switching Diode
Features
• These diodes are also available in other case
styles incl udi ng t he DO-3 5 ca se wit h the t ype des -
ignation 1N4148, the MiniMELF case with the type
designation LL4148, and the SOT-23 case with
the type designation IMBD4148.
• Silicon Epitaxial Planar Diode
• Fast switching diodes
Mechanical Da ta
Case: SOD-323 Plastic case
Weight: approx. 5.0 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature.
Part O rdering code Marking Remarks
1N4148WS 1N4148WS-GS18 or 1N4148WS-GS08 A2 Tape and Reel
Parameter Test condition Symbol Value Unit
Reverse voltage VR75 V
Peak reverse volt age VRM 100 V
Average rectified current half
wave rectification with resistive
load
f ≥ 50 Hz IF(AV) 1501) mA
Surge forward current t < 1 s and Tj = 25 °C IFSM 350 mA
Power dissipation Ptot 2001) mW
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambien air RthJA 6501) °C/W
Junction temperature Tj150 °C
Storage temperature TS- 65 to + 150 °C
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2Document Number 85751
Rev. 1.3, 08-Jul-04
VISHAY
1N4148WS
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Rectification Efficiency Measurement
Circuit
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 10 mA VF1.0 V
Leakage current VR = 20 V 25 nA
VR = 75 V 5.0 µA
VR = 20 V, TJ = 150 °C 50 µA
Diode capacitance VF = VR = 0 V Ctot 4pF
Voltage rise when swit ching ON
(tested with 50 mA pulses) tested with 50 mA pulses,
tp = 0.1 µs, rise time < 30 ns,
fp = (5 to 100) kHz
Vfr 2.5 ns
Reverse recovery time IF = 10 mA, IR = 1 mA, VR = 6 V,
RL = 100 Ωtrr 4ns
Rectification efficiency f = 100 MHz, VRF = 2 V ην0.45
17436
60 Ω5kΩ
2nF
VO
V =2V
RF
VISHAY
1N4148WS
Document Number 85751
Rev. 1.3, 08-Jul-04
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Forward characteristics
Figure 2. Dynamic For ward Resist ance vs. Forward Current
17437
17438
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Figure 4. Relative Capacitance vs. Reverse Voltage
17439
17440
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4Document Number 85751
Rev. 1.3, 08-Jul-04
VISHAY
1N4148WS
Vishay Semiconductors
Figure 5. Leakage Current vs. Junction Temperature
17441
17442
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
VISHAY
1N4148WS
Document Number 85751
Rev. 1.3, 08-Jul-04
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in mm (Inches)
17443
Cathode Band
0.3 (0.012)
2.85 (0.112)
2.50 (0.098)
1.95 (0.076)
1.60 (0.062)
1.1 (0.043)
1.5 (0.059)
0.15 (0.006) max.
1.25 (0.049) max.
0.1 (0.004) max. 0.25 (0.010) min.
1.60 (0.062)
1.40 (0.055)
0.39 (0.015)
ISO Method E
Mounting Pad Layout
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6Document Number 85751
Rev. 1.3, 08-Jul-04
VISHAY
1N4148WS
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
