BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES * Glass passivated junction * Hermetically sealed package * Low reverse current * Soft recovery characteristics * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 949588 * Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA APPLICATIONS Case: SOD-64 * Very fast rectification and switching diode Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYT56A VR = 50 V; IFAV = 3 A SOD-64 BYT56B VR = 100 V; IFAV = 3 A SOD-64 BYT56D VR = 200 V; IFAV = 3 A SOD-64 BYT56G VR = 400 V; IFAV = 3 A SOD-64 BYT56J VR = 600 V; IFAV = 3 A SOD-64 BYT56K VR = 800 V; IFAV = 3 A SOD-64 BYT56M VR = 1000 V; IFAV = 3 A SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage = repetitive peak reverse voltage Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range Document Number: 86032 Rev. 1.7, 30-Jul-10 PART SYMBOL VALUE UNIT BYT56A VR = VRRM 50 V BYT56B VR = VRRM 100 V BYT56D VR = VRRM 200 V BYT56G VR = VRRM 400 V BYT56J VR = VRRM 600 V BYT56K VR = VRRM 800 V BYT56M VR = VRRM 1000 V tp = 10 ms, half sine wave IFSM 80 A On PC board IFAV 1.5 A l = 10mm IFAV 3 A I(BR)R = 0.4 A ER 10 mJ Tj = Tstg - 55 to + 175 C See electrical characteristics For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M Fast Avalanche Sinterglass Diode Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (Tamb = 25 C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 25 K/W On PC board with spacing 25 mm RthJA 70 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 3 A VF - - 1.4 V VR = VRRM IR - - 5 A VR = VRRM, Tj = 150 C IR - - 150 A IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 100 ns Forward voltage Reverse current Reverse recovery time PART UNIT 40 3.5 IFAV - Average Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 30 20 l l 10 TL = constant VR = VRRM half sinewave 3.0 2.5 RthJA = 25 K/W I = 10 mm 2.0 1.5 1.0 RthJA = 70 K/W PCB: d = 25 mm 0.5 0 0 0 5 10 15 20 25 30 l - Lead Length (mm) 949462 0 Fig. 1 - Max. Thermal Resistance vs. Lead Length 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (C) 16366 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100 Tj = 175 C 10 1 IR - Reverse Current (A) IF - Forward Current (A) VR = VRRM Tj = 25 C 0.1 0.01 100 10 1 25 0.001 0 16365 0.5 1.0 1.5 2.0 2.5 3.0 VF - Forward Voltage (V) Fig. 2 - Max. Forward Current vs. Forward Voltage www.vishay.com 2 16367 50 75 100 125 150 175 Tj - Junction Temperature (C) Fig. 4 - Max. Reverse Current vs. Junction Temperature For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86032 Rev. 1.7, 30-Jul-10 BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M 450 350 300 PR-Limit at 100 % VR 250 200 150 PR-Limit at 80 % VR 100 50 50 75 100 125 150 f = 1 MHz 80 70 60 50 40 30 20 10 0 25 16368 Vishay Semiconductors 90 VR = VRRM 400 CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) Fast Avalanche Sinterglass Diode 0 0.1 175 Tj - Junction Temperature (C) Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) 16369 Fig. 6 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Document Number: 86032 Rev. 1.7, 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000