Radar Pulsed Power Transistor, lOOW, 2ms Pulse, 20% Duty
1.2 - 1.4 GHz PH1214-IOOEL
Features
_-_-. - -
NPN Silicon Microwave Power Transisror
Common Base Configuration
Broadband Class C Operation
High Effkiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units i L-J
E*,T:LE
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
JunctionTemperature
V CES 75 V
V EBO 3.0 V .CW [G.iC:I.DG! !0.331 7
‘c 14.1 A
P TOT 214 w .I22 CXX~.~:O fC.25)
TJ 200 “C
I ~ ~~~~
StorageTemperature I TSTG 1 -65 to +200 ) “C )
Electrical Characteristics at 25°C
Parameter Symbol Min Max Units Test Conditions
Collector-Emitter Breakdown Voltage BV,,, 75 - V I,=50 mA
Collector-Emitter Leakage Current ICES 10 mA V,,=28 v
Thermal Resistance R . .^, - 0.7 “C/W V-,=28 V, P,.,=25 W, 1==1.20, 1.30, 1.40 GHz
Output Power
Power Gain
Collector Efficiency
lnout Return Loss
P
OUT
GP
‘IC
RL
100 - W V,,=28 V, P,,=25 W, F=1.20, 1.30, 1.40 GHz
6.0 - dB V,,=28 V, P,,=25 W, F=1.20, 1.30,1.40 GHz
52 - % V,,=28 V, P,,=25 W. F=l.20,1.30. 1.40 GHz
8 - dB V-,=28 V, P,.,=25 W, F=1.20, 1.30, 1.40 GHz
Overdrive Stability OD-S - +l.O dB V,,=28 V, P,,=25 W, F=1.20, 1.30.1.40 GHz
Load Mismatch Tolerance VSWR-T - 3:l - I/,,=28 V, P,,=25 W. F=l.20, 1.30.1.40 GHz
Load Mismatch Stablility VSWR-S - 1.5:l - V,,=28 V, P,,=25 W, F=1.20, 1.30, 1.40 GHz
Broadband Test Fixture Impedances TEST FIXTURE TEST FIXTURE
:NPLIT 3’ ‘TPUT
v
F(GHz) z,,w z,,m CIRCUIT 1
-1 - I’
CIRCUIT
3.0 - j2.7
5
-
1.20 2.6 - j3.8
1.30 3.0 - j3.4 2.4 - j2.6 502 ZIF 2s; 5082
1.40 3.4 - j3.1 1.9 - j2.5 -
- -
-
Specifications Subject to Change Without Notice.
g-140
North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671
Fax (800) 618-8883 Fax +81 (03) 3226-1451
MIA-COM, Inc.
n Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
Radar Pulsed Power Transistor. 1 OOW PHI21 4-l OOEL
-~~ v2.01
RF Test Fixture
BPN4NP JACKS
2 PLACES
f 7
GRCL!NE ?:NS
4 2LACES --I
?r: WPRCS
?JGERS 5010.5
C4P4CITSRS,
YEATSiNK, TRANSISTOR ‘RANSISTZ?
73CSC255-ih NORYL BRPSS
73050255-04 74250125-11 73050257-E
CIRCUIT II i M E N S I c! N S
Specifications Subject to Change Without Notice.
M/A-COM, Inc. 9-141
North America: Tel. (800) 366-2266 H Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
