IPS7081(R)(S)
Static Electrical Characteristics
Max. Units Test Conditions
Tj=25°C, Vcc=14V (unless otherwise specified)
Symbol Parameter Min. Typ.
ON state resistance Tj=25°C ⎯ 55 70 , Vin=5V Iout=2A
ON state resistance Tj=150°C ⎯ 100 130 Vin=5V, Iout=2A
Rds(on)
⎯ 60 80 mΩ
ON state resistance Tj=25°C, Vcc=6.5V Vin=5V, Iout=2A
Vcc op. 6 ⎯ 35
Operating voltage range
V clamp 1 Vcc to Out clamp voltage 1 65 70 ⎯ Iout=30mA (see Fig. 1)
V clamp 2 Vcc to Out clamp voltage 2 ⎯ 70 75 Iout=2A (see Fig. 1)
Vf Body diode forward voltage ⎯ 1 1.35
V
Io 2.5Aut=
Icc Off Supply current when Off ⎯ 2.5 10 µA V V, Vout=0V in=0
Icc On ⎯ 2.5 3.5 mA V
Supply current when On Vin=5
Iout@0V V 0V Output leakage current ⎯ 2.5 10 out=
Iout@6V utput leakage current 20 ⎯ Vout=6V
O⎯
Idg leakage ⎯ 10 µA V 5.5V
Diagnostic output leakage current ⎯ dg=
Vdgl Low level diagnostic output voltage ⎯ 0.2 0.3 Idg=1.6mA
Vih Input high threshold voltage ⎯ 2.5 3.5
Vil Input low threshold voltage 1 2 ⎯
In hys Input hysteresis 0.15 0.5 1
UV high Under voltage high threshold voltage ⎯ 5 5.9
UV low Under voltage low threshold voltage 3.4 4.5 ⎯
UV hys U 1.5
V
ndervoltage hysteresis 0.1 0.5
Iin On In µA V V put current when device is On ⎯ 40 80 in=5
S hing E
cc=14V, Resistive load=6Ω, Vin=5V, Tj=25°C in. Typ. Max. Units Test Conditions
witc lectrical Characteristics
VSymbol Parameter M
Tdon Turn-on delay time ⎯ 16 45
Tr1 Rise time to Vout=Vcc-5V ⎯ 10 40 µs
Rise time to Vout=0.9 x Vcc ⎯ 20 100
Tr2
dV/dt (On) T ⎯ 0.8 3 V/µs
urn On dV/dt
EOn T ⎯ 100 ⎯ µJ
urn On energy
Tdoff Turn-off delay time ⎯ 25 50
Tf F 7.5 25
all time to Vout=0.1 x Vcc ⎯µs
dV/dt (Off) T 1.6 3 V/µs
urn Off dV/dt ⎯
EOff T ⎯ µJ
S g. 3
urn Off energy ⎯ 25
ee Fi
Tdiag Vout to Vdiag propagation delay ⎯ 15 ⎯ µs See Fig. 4 and Fig. 12
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