TD62081~084APG/AFG
2006-06-13
1
Toshiba Bipolar Digital Integrated Circuit Silicon Monolithic
TD62081APG,TD62081AFG,TD62082APG,TD62082AFG,
TD62083APG ,TD62083AFG,TD62084APG,TD62084AFG
8ch Darlington Sink Driver
The TD62081APG/AFG Series are high-voltage, high-current
darlington drivers comprised of eight NP darlington pairs.
All units feature integral clamp diodes for switching inductive loads.
Applications include relay, hammer, lamp and display (LED)
drivers.
The suffix (G) appended to the part number represents a Lead
(Pb)-Free product.
Features
Output current (single output)
500 mA (max) (TD62081APG/AFG series)
High sustaining voltage output
50 V (min) (TD62081APG/AFG series)
Output clamp diodes
Inputs compatible with various types of logic.
Package type-APG: DIP-18 pin
Package type-AFG: SOP-18 pin
Type Input Base
Resistor Designation
TD62081APG/AFG External General purpose
TD62082APG/AFG 10.5-k + 7 V
Zenner diode
14 V to 25 V
PMOS
TD62083APG/AFG 2.7 k TTL, 5 V CMOS
TD62084APG/AFG 10.5 k 6 V to 15 V
PMOS, CMOS
Pin Connection (top view)
Weight
DIP18-P-300-2.54D : 1.47 g (typ.)
SOP18-P-375-1.27 : 0.41 g (typ.)
O1
18 17 16 15 13 12 11 10
1 2 34 6 7 8 9
O2 O3 O7 O8 COMMON
I1 I2 I3 I7 I8 GNDI4 I6
14
5
I5
O4 O5 O6
TD62081~084APG/AFG
2006-06-13
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Schematics (each driver)
Note: The input and output parasitic diodes cannot be used as clamp diodes.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Output sustaining voltage VCE (SUS) 0.5 to 50 V
Output current IOUT 500 mA/ch
Input voltage VIN (Note 1) 0.5 to 30 V
Input current IIN (Note 2) 25 mA
Clamp diode reverse voltage VR 50 V
Clamp diode forward current IF 500 mA
APG 1.47
Power dissipation
AFG
PD 0.96
W
Operating temperature Topr 40 to 85 °C
Storage temperature Tstg 55 to 150 °C
Note 1: Except TD62081APG/AFG
Note 2: Only TD62081APG/AFG
Input
GND
3 k
Common
7.2 k
Output
TD62081APG/AFG
Input
GND
3 k
Common
7.2 k
Output
TD62082APG/AFG
10.5 k
7 V Input
GND
3 k
Common
7.2 k
Output
TD62083APG/AFG
2.7 k
Input
GND
3 k
Common
7.2 k
Output
TD62084APG/AFG
10.5 k
TD62081~084APG/AFG
2006-06-13
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Recomm end ed Operating Condi tions (Ta = 40 to 85 °C )
Characteristics Symbol Test Condition Min Typ. Max Unit
Output sustaining voltage VCE (SUS) 0 50 V
Tpw = 25 ms, Duty = 10%
8 circuits 0 347
APG
Tpw = 25 ms, Duty = 50%
8 circuits 0 123
Tpw = 25 ms, Duty = 10%
8 circuits 0 268
Output current
AFG
IOUT
Tpw = 25 ms, Duty = 50%
8 circuits 0 90
mA/ch
Input voltage Except
TD62081APG/AFG VIN 0
30 V
TD62082APG/AFG 14 30
TD62083APG/AFG 2.5
30
Input voltage
(Output on)
TD62084APG/AFG
VIN (ON)
8
30
V
TD62082APG/AFG 0
7.4
TD62083APG/AFG 0 0.5
Input voltage
(Output off)
TD62084APG/AFG
VIN (OFF)
0 1.0
V
Input current Only
TD62081APG/AFG IIN 0 5 mA
Clamp diode reverse voltage VR 50 V
Clamp diode forward current IF 400 mA
APG 0.52
Power
dissipation AFG
PD 0.4
W
TD62081~084APG/AFG
2006-06-13
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol
Test
Circuit Test Condition Min Typ. Max Unit
Ta = 25°C 50
Ta = 85°C 100
TD62082 VIN = 6 V 500
Output leakage
current
TD62084
ICEX 1 VCE = 50 V
VIN = 1 V 500
µA
IOUT = 350 mA, IIN = 500 µA 1.3 1.6
IOUT = 200 mA, IIN = 350 µA 1.1 1.3
Collector-emitter saturation voltage VCE (sat) 2
IOUT = 100 mA, IIN = 250 µA 0.9 1.1
V
TD62082APG/AFG VIN = 17 V 0.82 1.25
TD62083APG/AFG VIN = 3.85 V 0.93 1.35
VIN = 5 V 0.35 0.5
TD62084APG/AFG
IIN (ON) 2
VIN = 12 V 1.0 1.45
mA
Input current
I
IN (OFF) 4 IOUT = 500 µA, Ta = 85°C 50 65 µA
TD62082APG/AFG VCE = 2 V, IOUT = 300 mA 13
VCE = 2 V, IOUT = 200 mA 2.4
VCE = 2 V, IOUT = 250 mA 2.7
TD62083APG/AFG
VCE = 2 V, IOUT = 300 mA 3.0
VCE = 2 V, IOUT = 125 mA 5.0
VCE = 2 V, IOUT = 200 mA 6.0
VCE = 2 V, IOUT = 275 mA 7.0
Input voltage
(Output on)
TD62084APG/AFG
VIN (ON) 5
VCE = 2 V, IOUT = 350 mA 8.0
V
DC current transfer ratio hFE 2 VCE = 2 V, IOUT = 350 mA 1000
Ta = 25°C (Note) 50
Clamp diode reverse current IR 6
Ta = 85°C (Note) 100
µA
Clamp diode forward voltage VF 7 IF = 350 mA 2.0 V
Input capacitance CIN 15 pF
Turn-on delay tON RL = 125 , VOUT = 50 V 0.1
Turn-off delay tOFF
8
RL = 125 , VOUT = 50 V 0.2
µs
Note: VR = VR max
TD62081~084APG/AFG
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Test Circuit
1. ICEX 2. VCE (sat), hFE 3. IIN (ON)
4. IIN (OFF) 5. VIN (ON) 6. IR
7. VF
ICE
X
Open
Open
VIN VCE VCE, VCE (sat)
Open
IIN I
OUT
IOUT
hFE =IIN
Open
VIN
IIN (ON)
Open
Open
IIN (OFF) IOUT
Open
IOUT
VIN (ON) VCE
IR
Open
Open VR
IF
Open
Open
VF
TD62081~084APG/AFG
2006-06-13
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8. tON, tOFF
Note 1: Pulse width 50 µs, duty cycle 10%
Output impedance 50 , tr 5 ns, tf 10 ns
Note 2: See below.
Input condition
Type Number R1 VIH
TD62081APG/AFG 2.7 k 3 V
TD62082APG/AFG 0 13 V
TD62083APG/AFG 0 3 V
TD62084APG/AFG 0
8 V
Note 3: CL includes probe and jig capacitance
Precauti ons fo r Using
This IC does not include built-in protection circuits for excess current or overvoltage.
If this IC is subjected to excess current or overvoltage, it may be destroyed.
Hence, the utmost care must be taken when systems which incorporate this IC are designed.
Utmost care is necessary in the design of the output line, COMMON and GND line since IC may be destroyed
due to short-circuit between outputs, air contamination fault, or fault by improper grounding.
10% 10%
50%
tON t
OFF
t
f
tr
VIH
0
VOH
VOL
Input 50%
90% 90%
50
µ
s
Output
Input
CL = 15 pF
(Note 3)
(Note 1)
Open VOUT
Output
Pulse
generator
RL
(Note 2)
Input
condition
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Input voltage VIN (V)
IIN – VIN
Input current IIN (mA)
Input voltage VIN (V)
IIN – VIN
Input current IIN (mA)
Input voltage VIN (V)
IIN – VIN
Input current IIN (mA)
Collector-emitter saturation voltage
VCE (sat) (V)
IOUT – VCE (sat)
Output current IOUT (mA)
Collector-emitter saturation voltage
VCE (sat) (V)
IOUT – VCE (sat)
Output current IOUT (mA)
Duty cycle (%)
IOUT – Duty cycle
Output current IOUT (mA)
max
TD62082APG
0
12
2
1
3
16 20 24
typ.
min
TD62084APG
0
5
2
1
3
7 9 11
max
typ.
min
600
400
0
0 0.5 1.0 1.5 2.0
200
typ.
25°C max
0
0
500
300
100
60 100
200
40
400
20 80
8 circuits active
Ta = 25°C
85
600
400
0
0 0.4 0.8 1.2 1.6
200
IIN = 500 µA
Ta = 85°C
25
30
TD62083APG
0
2
2
1
3
3 4 5
max
typ.
min
TD62081~084APG/AFG
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Output current IOUT (mA)
hFEIOUT
DC current transfer ratio hFE
Output current IOUT (mA)
hFEIOUT
DC current transfer ratio hFE
Ambient temperature Ta (°C)
PD – Ta
Power dissipation PD (W)
1.5
1.0
0
0 50 100 150 200
0.5
2.0
(1) Type-APG Free air
(2) Type-AFG Free air
(1)
(2)
10000
1
1000
100
10
3
30
300
3000
10 100 1000 10000
TD62084
VCE = 2.0 V
85°C
40
25
5
50
500
5000
10000
1
1000
100
10
3
30
300
3000
10 100 1000 10000
TD62083
VCE = 2.0 V
85°C
40
25
5
50
500
5000
TD62081~084APG/AFG
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Package Dimensions
Weight: 1.47 g (typ.)
TD62081~084APG/AFG
2006-06-13
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Package Dimensions
Weight: 0.41 g (typ.)
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Notes on Contents
1. Equivalent Circuits
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory
purposes.
2. Test Circuits
Components in the test circuits are used only to obtain and confirm the device characteristics. These
components and circuits are not guaranteed to prevent malfunction or failure from occurring in the
application equipment.
IC Usage Considerati on s
Notes on Handling of ICs
(1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be
exceeded, even for a moment. Do not exceed any of these ratings.
Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
(2) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in
case of over current and/or IC failure. The IC will fully break down when used under conditions that
exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal
pulse noise occurs from the wiring or load, causing a large current to continuously flow and the
breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of
breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are
required.
(3) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the
design to prevent device malfunction or breakdown caused by the current resulting from the inrush
current at power ON or the negative current resulting from the back electromotive force at power OFF.
IC breakdown may cause injury, smoke or ignition.
Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable,
the protection function may not operate, causing IC breakdown. IC breakdown may cause injury,
smoke or ignition.
(4) Do not insert devices in the wrong orientation or incorrectly.
Make sure that the positive and negative terminals of power supplies are connected properly.
Otherwise, the current or power consumption may exceed the absolute maximum rating, and
exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
In addition, do not use any device that is applied the current with inserting in the wrong orientation
or incorrectly even just one time.
(5) Carefully select external components (such as inputs and negative feedback capacitors) and load
components (such as speakers), for example, power amp and regulator.
If there is a large amount of leakage current such as input or negative feedback condenser, the IC
output DC voltage will increase. If this output voltage is connected to a speaker with low input
withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over current can cause
smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied
Load (BTL) connection type IC that inputs output DC voltage to a speaker directly.
TD62081~084APG/AFG
2006-06-13
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Points to Remember on Handling of ICs
(1) Heat Radiation Design
In using an IC with large current flow such as power amp, regulator or driver, please design the
device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at
any time and condition. These ICs generate heat even during normal use. An inadequate IC heat
radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In
addition, please design the device taking into considerate the effect of IC heat radiation with
peripheral components.
(2) Back-EMF
When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to
the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power
supply is small, the device’s motor power supply and output pins might be exposed to conditions
beyond absolute maximum ratings. To avoid this problem, take the effect of back-EMF into
consideration in system design.
TD62081~084APG/AFG
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About solderability, following conditions were confirmed
Solderability
(1) Use of Sn-37Pb solder Bath
· solder bath temperature
= 230°C
· dipping time
= 5 seconds
· the number of times = once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature
= 245°C
· dipping time
= 5 seconds
· the number of times = once
· use of R-type flux
RESTRICTIONS ON PRODUCT USE 060116EBA
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