©2002 Fairch ild Semicond uctor C orpo ration IRF540, RF1S540SM Rev. B
IRF540, RF1S540SM
28A, 10 0V, 0.077 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications su ch as sw itc hing regulators , sw itc hing
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17421.
Features
• 28A, 100V
•r
DS(ON) = 0.077Ω
• Single Pulse Avalanche Energy Rated
• Nan os ec ond Sw itching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guid eli nes for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB JEDEC TO-263AB
Ordering Information
PART NUMBER PACKAGE BRAND
IRF540 TO-220AB IRF540
RF1S540SM TO-263AB RF1S540SM
NOTE: When ordering, use the entire part number . Add the suf fix 9A to
obtain the T O-263AB v ariant in the tape and reel, i.e., RF1S54 0SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet January 2002
NOT RECOMMENDED FOR NEW DESIGNS
POSSIBLE SUBSTITUTE PRODUCT
IRF540N
©2002 Fairch ild Semicond uctor C orpo ration IRF540, RF1S540SM Rev. B
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF540, RF1S540SM UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID28
20 A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 110 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD120 W
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 230 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
CAUTION: S tresses above those l isted in “A bsolute Maximu m Rating s” may cause per manen t damage to t he device. This is a stress on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, V GS = 0V (Figure 10) 100 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA2-4V
Zero Gate Voltage Drain Current IDSS VDS = 95V, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BV DSS, VGS = 0V, TJ = 150oC - - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = 10V (Figure 7) 28 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drai n to Source On Resistance (Not e 2) rDS(ON) ID = 17A, VGS = 10V (Figures 8, 9) - 0.060 0.077 Ω
Forward Transconductance (Note 2) gfs VDS ≥ 50V, ID = 17A (Figure 12) 8.7 13 - S
Turn-On Delay T i me td(ON) VDD = 50V, ID ≈ 28A, RG ≈ 9.1Ω, RL = 1.7Ω
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
-1523 ns
Rise Time tr- 70 110 ns
Turn-Off Delay Time td(OFF) -4060 ns
Fall Time tf-5083 ns
Total Gate Charge
(Gate to Source + G at e to Drain) Qg(TOT) VGS = 10V, ID = 28A, VDS = 0.8 x Rated BV DSS,
Ig(REF) = 1.5mA (Figure 14) Gate Charge is Essentially
Independent of Operating Temperature
-3859nC
Gate to Source Charge Qgs -8 - nC
Gate to Drain “Miller” Charge Qgd -21 - nC
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11) - 1450 - pF
Output Capacitance COSS - 550 - pF
Reverse Transfer Capacitance CRSS - 100 - pF
Internal Drain Inductance LDMeasured From the
Contact Screw on Tab To
Center of Die
Modified MOSFET Symbol
Showing the Internal
Devices Inductances
-3.5 - nH
Measured From the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
-4.5 - nH
Internal Source Inductance LSMeasured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-7.5 - nH
Thermal Resistance Jun ction to Case RθJC - - 1.25 oC/W
Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 80 oC/W
RθJA RF1S540SM M ounted on FR-4 Board with Minimum
Mounting Pad --62
oC/W
LS
LD
G
D
S
IRF540, RF1S54 0SM
©2002 Fairch ild Semicond uctor C orpo ration IRF540, RF1S540SM Rev. B
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN T YP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET Symbol
Showing the Integral
Reverse P-N J unct io n
Diode
--28A
Pulse Source to Drain Current
(Note 3) ISDM --110A
Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 27A, VGS = 0V (Figure 13) - - 2.5 V
Reverse Recovery Time trr TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 70 150 300 ns
Reverse Recovery Charge QRR TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 0.2 1.0 1.9 µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum j u n ct ion temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 440µH, RG = 25Ω, peak IAS = 28A.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. NORMALIZED PO WER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
TC, CASE TEMPERATURE (oC)
25 50 75 100 125 150 17
5
0
POWER DISSIPATION MULTIPLIER
0
0.2
0.4
0.6
0.8
1.0
1.2
12
6
025 50 75 100 125 150
24
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
30
17
5
18
t1, RECTANGULAR PULSE DURATION (s) 10
ZθJC, TRANSIENT
10-3 10-2 10-1 1
1
10-5 10-4
10
0.01
0.1
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
PDM
t1
t2
0.1
0.02
0.2
0.5
0.01
0.05
SINGLE PULSE
THERMAL IMPEDANCE (oC/W)
IRF540, RF1S54 0SM
©2002 Fairch ild Semicond uctor C orpo ration IRF540, RF1S540SM Rev. B
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATIO N CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves Unless Otherwise Specified (Continued)
10
100
10 300
300
11
100
µ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURR ENT (A )
LIMITED BY r
DS(ON)
AREA MAY BE
OP E R ATIO N IN T H IS
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
0012243648
10
20
30
40
50
6
0
VGS = 7V
VGS = 5V
VGS = 4V
VGS = 10V
VGS = 8V
VGS = 6V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
10
0123 5
20
30
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 6V
VGS = 10V
40
4
VGS = 4V
VGS = 7V
VGS = 5V
50
VGS = 8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0 4681
0
2
0.1
1
10
ID(ON), ON-STATE DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
100
25oC
175oC
VDS ≥ 50V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0.4
0.6
0.8
25 50 75 100
rDS(ON), DRAIN TO SOURCE
ID, DRAIN CURRENT (A)
12
5
1.0
0
0.2 VGS = 10V
VGS = 20V
ON RESISTANCE (Ω)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE
3.0
1.8
1.2
0.6
0
-60 -40 -20 0 20 40 60
TJ, JUNCTION TEMPERATURE (oC)
100 120 140 160 18
0
2.4
80
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 28A
IRF540, RF1S54 0SM
©2002 Fairch ild Semicond uctor C orpo ration IRF540, RF1S540SM Rev. B
FIGURE 10. NORMALIZED DRAIN T O SOURCE BREAKDO WN
VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAG E
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE T O SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
100 120 140 160 18
0
1.15
80
ID = 250µA3000
600
0110 10
0
C, CAPACITANCE (pF)
1800
VDS, DRAIN TO SOURCE VOLTAGE (V)
2400
1200
CISS
COSS
CRSS
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
VGS = 0V, f = 1MHz
25oC
ID, DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE (S)
0010203040
4
8
12
16
20
5
0
175oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
01.2 1.8 2.4 3.
0
0.6
1
10
100
ISD, SOURCE TO DRAIN CURRENT (A)
VSD, SOURCE TO DRAIN VOLTAGE (V)
1000
25oC
175oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
Qg, GATE CHARGE (nC)
VGS, GATE TO SOURCE VOLTAGE (V)
0012243648
4
8
12
16
20
6
0
ID = 28A
VDS = 50V
VDS = 80V
VDS = 20V
IRF540, RF1S54 0SM
©2002 Fairch ild Semicond uctor C orpo ration IRF540, RF1S540SM Rev. B
Te st Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED E N ERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
Ig(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT
Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
IG(REF)
0
IRF540, RF1S54 0SM
