1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor . The BR T eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
•Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter V oltage VCEO 50 Vdc
Collector Current IC100 mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°CPD*200
1.6 mW
mW/°C
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance — Junction-to-Ambient (surface mounted) RθJA 625 °C/W
Operating and Storage Temperature Range TJ, Tstg –65 to +150 °C
Maximum Temperature for Soldering Purposes,
T ime in Solder Bath TL260
10 °C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device Marking R1 (K) R2 (K)
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1(2)
A6A
A6B
A6C
A6D
A6E
10
22
47
10
10
10
22
47
47
∞
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMUN2111T1/D)
Order this document
by MMUN2111LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
PNP SILICON
BIAS RESISTOR
TRANSISTOR
Motorola Preferred Devices
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
12
3
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
DEVICE MARKING AND RESISTOR VALUES (Continued)
Device Marking R1 (K) R2 (K)
MMUN2116LT1(2)
MMUN2130LT1(2)
MMUN2131LT1(2)
MMUN2132LT1(2)
MMUN2133LT1(2)
MMUN2134LT1(2)
A6F
A6G
A6H
A6J
A6K
A6L
4.7
1.0
2.2
4.7
4.7
22
∞
1.0
2.2
4.7
47
47
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutof f Current (VCB = 50 V, IE = 0) ICBO — — 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO — — 500 nAdc
Emitter-Base Cutoff Current MMUN211 1LT1
(VEB = 6.0 V, IC = 0) MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
IEBO —
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 — — Vdc
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 — — Vdc
ON CHARACTERISTICS(3)
DC Current Gain MMUN2111LT1
(VCE = 10 V, IC = 5.0 mA) MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
hFE 35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
250
250
5.0
15
27
140
130
—
—
—
—
—
—
—
—
—
—
—
Collector-Emitter Saturation V oltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1
(IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/
MMUN2132LT1/MMUN2133LT1/MMUN2134LT1
VCE(sat) — — 0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MMUN2111LT1
MMUN2112LT1
MMUN2114LT1
VOL —
—
—
—
—
—
0.2
0.2
0.2
Vdc
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) MMUN2113LT1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
2. New devices. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MMUN2115LT1
MMUN2116LT1
MMUN2131LT1
MMUN2132LT1
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MMUN2130LT1
VOH 4.9 — — Vdc
Input Resistor MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
k Ω
Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1
MMUN2114LT1
MMUN2115LT1/MMUN2116LT1
MMUN2130LT1/MMUN2131LT1/MMUN2132LT1
MMUN2133LT1
R1/R20.8
0.17
—
0.8
0.055
1.0
0.21
—
1.0
0.1
1.2
0.25
—
1.2
0.185
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1
100
10
1
0.1
0.01
0.001 0Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
TA= –25
°
C
25
°
C
12345678 910
0.01 20
IC, COLLECTOR CURRENT (mA)
VCE(sat), MAXIMUM COLLECTOR VOLT AGE (VOLTS)
0.1
1
0406080
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN (NORMALIZED)
TA=75
°
C
–25
°
C
100
10
75
°
C
50
010 20 3040
4
3
1
2
V
R
, REVERSE BIAS VOLT AGE (VOLTS)
Cob, CAP ACITANCE (pF)
0
TA= –25
°
C25
°
C
75
°
C
f = 1 MHz
lE = 0 V
TA = 25
°
C
VO = 5 V
IC/IB=10
V
CE = 10 V
0IC, COLLECTOR CURRENT (mA)
0.1
Vin, INPUT VOLTAGE (VOLTS)
1
10
100
10 20 30 40 50
TA= –25
°
C
25
°
C
75
°
C
VO = 0.2 V
Figure 1. Derating Curve
250
200
150
100
50
0
–50 0 50 100 150
TA, AMBIENT TEMPERATURE (
°
C)
PD, POWER DISSIPATION (MILLIW ATTS)
R
θ
JA = 625
°
C/W
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current
25
°
C
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112LT1
Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN (NORMALIZED)
100
101100
TA=75
°
C25
°
C
–25
°
C
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
010 20 30
TA= –25
°
C
75
°
C
Vin, INPUT VOL TAGE (VOLTS)
100
10
1
0.1 40 50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 01 23 4
V
in, INPUT VOLTAGE (VOLTS)
75
°
C25
°
C
TA= –25
°
C
IC, COLLECTOR CURRENT (mA)
5678910
Figure 11. Input Voltage versus Output Current
0.01
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
020 6080
75
°
C
25
°
C
TA= –25
°
C
50
010 2030 40
4
3
2
1
0
V
R
, REVERSE BIAS VOLT AGE (VOLTS)
Cob, CAP ACITANCE (pF)
25
°
C
f = 1 MHz
lE = 0 V
TA = 25
°
C
VO = 5 V
VO = 0.2 V
IC/IB=10 V
CE = 10 V
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2113LT1
Figure 12. VCE(sat) versus IC
100
10
1
0.1 010203040
I
C
, COLLECTOR CURRENT (mA)
Vin , INPUT VOLTAGE (VOLTS)
TA= –25
°
C25
°
C
75
°
C
50
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1
0.01
0.001010
I
C
, COLLECTOR CURRENT (mA)
25
°
C
Vin, INPUT VOLTAGE (VOLTS)
–25
°
C
Figure 15. Output Current versus Input Voltage
hFE, CURRENT GAIN (NORMALIZED)
1000
100
101 10 100
IC, COLLECTOR CURRENT (mA)
25
°
C
–25
°
C
Figure 16. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01 010203040
75
°
C
25
°
C
VCE(sat), MAXIMUM COLLECTOR VOLT AGE (VOLTS)
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAP ACITANCE (pF)
12 3 4 5 6 7 8 9
f = 1 MHz
lE = 0 V
TA = 25
°
C
VO = 5 V
VO = 2 V
IC/IB=10
T
A=75
°
C
T
A=75
°
C
T
A= –25
°
C
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2114LT1
35 Vin, INPUT VOLTAGE (VOLTS)
10
1
0.101020304050
100
10
10246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 81015202530 404550
V
R
, REVERSE BIAS VOLT AGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
V
CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 18. DC Current Gain
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Cob, CAP ACITANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
f = 1 MHz
lE = 0 V
TA = 25
°
C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
TA= –25
°
C
75
°
C25
°
C
TA=75
°
C25
°
C
–25
°
C
VO = 5 V
VO = 0.2 V TA= –25
°
C
25
°
C
75
°
C
IC/IB=10
h
FE, DC CURRENT GAIN (NORMALIZED)
1 10 100
IC, COLLECTOR CURRENT (mA)
–25
°
C
25
°
C
TA=75
°
C
V
CE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 1520405060708090
8 Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT-23 POWER DISSIPATION
The power dissipation of the SOT-23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient; and the operating temperature, TA. Using the
values provided on the data sheet, PD can be calculated as
follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25°C, one can
calculate the power dissipation of the device which in this
case is 200 milliwatts.
PD = 150°C – 25°C
625°C/W = 200 milliwatts
The 625°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 200 milliwatts. Another alternative would
be to use a ceramic substrate or an aluminum core board
such as Thermal Clad. Using a board material such as
Thermal Clad, a power dissipation of 400 milliwatts can be
achieved using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
•The soldering temperature and time should not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
9
Motorola Small–Signal Transistors, FETs and Diodes Device Data
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones, and a
figure for belt speed. Taken together, these control settings
make up a heating “profile” for that particular circuit board.
On machines controlled by a computer, the computer
remembers these profiles from one operating session to the
next. Figure 23 shows a typical heating profile for use when
soldering a surface mount device to a printed circuit board.
This profile will vary among soldering systems but it is a good
starting point. Factors that can affect the profile include the
type of soldering system in use, density and types of
components on the board, type of solder used, and the type
of board or substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density board.
The Vitronics SMD310 convection/infrared reflow soldering
system was used to generate this profile. The type of solder
used was 62/36/2 Tin Lead Silver with a melting point
between 177–189°C. When this type of furnace is used for
solder reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2
VENT
“SOAK”
STEP 3
HEATING
ZONES 2 & 5
“RAMP”
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6
VENT STEP 7
COOLING
200
°
C
150
°
C
100
°
C
50
°
C
TIME (3 TO 7 MINUTES T OTAL) TMAX
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
205
°
TO
219
°
C
PEAK AT
SOLDER
JOINT
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
100
°
C
150
°
C160
°
C
170
°
C
140
°
C
Figure 23. Typical Solder Heating Profile
10 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
DJ
K
L
A
C
BS
H
GV
3
12
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MMUN2111LT1/D
*MMUN2111LT1/D*
◊
