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1 - 4
Symbol Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 20 kW600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 60 A
IC90 TC= 90°C 35 A
ICM TC= 90°C, tp =1 ms 70 A
RBSOA VGE= ±15 V, TJ = 125°C, RG = 10 W ICM = 110 A
Clamped inductive load, L = 30 µH VCEK < VCES
tSC VGE= ±15 V, VCE = 600 V, TJ = 125°C 10 µs
(SCSOA) RG = 10 W, non repetitive
PCTC= 25°C IGBT 250 W
Diode 80 W
TJ-55 ... +150 °C
Tstg
-40 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque TO-220 0.4 - 0.6 Nm
TO-247 0.8 - 1.2 Nm
Weight 6g
VCES = 600 V
IC25 = 60 A
VCE(sat) typ = 2.1 V
Features
●NPT IGBT technology
●low switching losses
●low tail current
●no latch up
●short circuit capability
●positive temperature coefficient for
easy paralleling
●MOS input, voltage controlled
●optional ultra fast diode
●International standard package
Advantages
●Space savings
●High power density
Typical Applications
●AC motor speed control
●DC servo and robot drives
●DC choppers
●Uninteruptible power supplies (UPS)
●Switch-mode and resonant-mode
power supplies
IGBT
with optional Diode
High Speed,
Low Saturation Voltage
IXDP 35N60 B
IXDH 35N60 B
IXDH 35N60 BD1
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V(BR)CES VGE = 0 V 600 V
VGE(th) IC= 0.7 mA, VCE = VGE 35V
ICES VCE = VCES TJ = 25°C 0.1 mA
TJ = 125°C 1 mA
IGES VCE = 0 V, VGE = ± 20 V ± 500 nA
VCE(sat) IC= 35 A, VGE = 15 V 2.2 2.7 V
232
IXDH 35N60 B IXDH 35N60 BD1
IXDP 35N60 B
G
C
E
G
C
E
TO-247 AD IXDH ...
G
E
CC (TAB)
G = Gate, E = Emitter
C = Collector , TAB = Collector
TO-220 AB IXDP ...
C (TAB)
G
C
E
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© 2002 IXYS All rights reserved
2 - 4
IXDP 35N60 B IXDH 35N60 B
IXDH 35N60 BD1
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Cies 1600 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 150 pF
Cres 90 pF
QgIC = 35 A, VGE = 15 V, VCE = 480 V 120 nC
td(on) 30 ns
tr45 ns
td(off) 320 ns
tf70 ns
Eon 1.6 mJ
Eoff 0.8 mJ
RthJC 0.5 K/W
RthCH TO 247 Package with heatsink compound 0.25 K/W
RthCH TO 220 Package with heatsink compound 0.5 K/W
Inductive load, TJ = 125°C
IC = 35 A, VGE = ±15 V,
VCE = 300 V, RG = 10 W
Reverse Diode (FRED) [D1 version only] Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
VFIF = 35 A, VGE = 0 V 2.1 2.4 V
IF = 35 A, VGE = 0 V, TJ = 125°C 1.6 V
IFTC = 25°C 45 A
TC = 90°C 25 A
IRM IF = 15 A, -diF/dt = 400 A/µs, VR = 300 V 13 A
trr VGE = 0 V, TJ = 125°C 90 ns
trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns
RthJC 1.6 K/W
TO-220 AB Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
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© 2002 IXYS All rights reserved
3 - 4
IXDP 35N60 B IXDH 35N60 B
IXDH 35N60 BD1
01234567
0
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80
0 200 400 600 800 1000
0
5
10
15
20
25
30
0
40
80
120
0123
0
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80
0 20406080100120
0
3
6
9
12
15
01234567
0
10
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60
70
80
TJ = 25°CTJ = 125°C
VCE = 480V
IC = 30A
345678910
0
10
20
30
40
50
60
70
80
VCE = 20V
VCE
V
A
IC
VCE
A
IC
V
V
V
VGE VF
A
IC
IF
nC
QG-di/dt
V
VGE IRM trr
ns
A/
m
s
IXDx35N60B
TJ = 125°C
VR = 300V
IF = 15A
TJ = 25°C
TJ = 125°C
IRM
trr
TJ = 25°C
TJ = 125°C
9V
11V
VGE= 17V
15V
13V
9V
11V
VGE= 17V
15V
13V
A
A
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
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IXDP 35N60 B IXDH 35N60 B
IXDH 35N60 BD1
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
10 20 30 40 50 60
0
1
2
3
4
0
20
40
60
80
10 20 30 40 50 60
0.0
0.5
1.0
1.5
2.0
0
100
200
300
400
10-5 10-4 10-3 10-2 10-1 100101
0.001
0.01
0.1
1
0 5 10 15 20 25 30 35 40
0.0
0.5
1.0
1.5
2.0
0
200
400
600
800
0 5 10 15 20 25 30 35 40
0.0
0.5
1.0
1.5
2.0
0
15
30
45
60
single p uls e
VCE = 300V
VGE = ±15V
RG = 10
W
TJ = 125°C
IXDH30N60B
VCE = 300V
VGE = ±15V
IC = 35A
TJ = 125°C
0 100 200 300 400 500 600 700
0
20
40
60
80
100
120
RG = 10
W
TJ = 125°C
VCE = 300V
VGE = ±15V
RG = 10
W
TJ = 125°C
Eon
VCE = 300V
VGE = ±15V
IC = 35A
TJ = 125°C
td(on)
tr
Eoff
td(off)
tf
Eon
td(on)
tr
Eoff
td(off)
tf
IC
AICA
Eoff
Eon tt
RG
W
RG
W
VCE ts
mJ
Eon
mJ
Eoff
ns
t
ns
t
ICM
K/W
ZthJC IGBT
diode
V
A
mJ ns ns
mJ
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