PRODUCT DATA Micro International, Inc PART NUMBER LDTBFW30 and LDTBFW30T Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com sales@microlid.com Micro-LID Transistors LDTBFW30 and LDTBFW30T Description: The LDTBFW30 (untinned) and LDTBFW30T (tinned) are NPN silicon 1.6 GHz wideband transistors in very small, rugged, surface mount, 4-post ceramic packages (Micro International manufactured package p/n 4-075-1). The LDTBFW30 and LDTBFW30T meet the general specifications of the BFW30 transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier which can be provided with gold metallized or pre-tinned lands, and is approved for military, medical implant, sensor, and high reliability applications. The LDTBFW30 and LDTBFW30T can be provided with special feature options such as additional temperature cycling, screening, and matching Hfe selection. Maximum Ratings: Parameter Symbol Rating Collector-Base Voltage Vcbo 20 V Collector-Emitter Voltage Vceo 10 V Emitter-Base Voltage Vebo 2.5 V Collector Current Ic 50 mA Total Dissipation Pt 350 mW Operating Junction Temperature Tj 150C Storage Temperature Tstg -65C to 150C Operating Temperature Toper -55C to 125C 1/3 December 1997 www.microlid.com sales@microlid.com Micro-LID Transistors LDTBFW30 and LDTBFW30T ______________________________________________________________________________________ Outline / Schematic: TOP VIEW 3 3, 4 2 2 .040 1 1 4 .075 END VIEW SIDE VIEW .035 SUBSTRATE / CIRCUIT BOARD Dimensions / Marking: Length Width Height .075 + .003 .040 + .003 .035 + .003 Post 1 (Emitter) Post 2 (Base) Post 3,4 (Collector) .015 x .010 typ .015 x .010 typ .015 x .012 typ Marking on back of package : Gray Stripe over Emitter and Red Dot in Center (post down configuration) Standard In-Process Screening Requirements: O Semiconductor die and Micro-LID package visual inspection O Wire pull test O 24 hour stabilization bake at 150C O 10 temperature cycles from -55C to 125C O 100% electrical test of dc characteristics at 25C O Final visual inspection ________________________________________________________________ 2/3 December 1997 www.microlid.com sales@microlid.com Micro-LID Transistors LDTBFW30 and LDTBFW30T Electrical Characteristics (25C Ambient) Parameter Symbol Min Typ Max Collector-Base Breakdown Ic = 100 uA, Ie = 0 BVcbo 20 -- -- V Collector-Emitter Breakdown* Ib = 0, Ic = 10 mA BVceo 10 -- -- V Emitter-Base Breakdown Ic = 0, Ie = 100 uA BVebo 2.5 -- -- V Collector-Base Cutoff Current Vcb = 10 V Icbo -- -- 50 nA DC Forward Current Gain* Ic = 25 mA, Vce = 5 V Ic = 50 mA, Vce = 5 V Hfe 25 25 --- --- Collector Capacitance Vcb = 5 V, Ie = 0 f = 1 MHz Cobo -- -- 1.5 Gain Bandwidth Product Ic = 50 mA, Vce = 5 V f = 500 MHz fT -- 1.6 -- GHz Noise Figure Ic = 2 mA, Vce = 5 V f = 500 MHz NF -- -- 5 dB * Pulse test, pulse width < 300 usec, duty cycle < 2% 3/3 December 1997 Units pF