Micro International, Inc.
179-204 Belle Forrest Circle
Nashville, TN 37221
Tel: 615-662-1200 Fax 615-662-1226
Micro International, Inc
PRODUCT DATA
PART NUMBER
LDTBFW30 and LDTBFW30T
Micro-LID NPN Transistor
Micro-LID Transistors
LDTBFW30 and LDTBFW30T
Description:
The LDTBFW30 (untinned) and LDTBFW30T (tinned) are NPN silicon 1.6 GHz
wideband transistors in very small, rugged, surface mount, 4-post ceramic
packages (Micro International manufactured package p/n 4-075-1). The
LDTBFW30 and LDTBFW30T meet the general specifications of the BFW30
transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier
which can be provided with gold metallized or pre-tinned lands, and is approved
for military, medical implant, sensor, and high reliability applications. The
LDTBFW30 and LDTBFW30T can be provided with special feature options such
as additional temperature cycling, screening, and matching Hfe selection.
Maximum Ratings:
Parameter Symbol Rating
Collector-Base Voltage Vcbo 20 V
Collector-Emitter Voltage Vceo 10 V
Emitter-Base Voltage Vebo 2.5 V
Collector Current Ic 50 mA
Total Dissipation Pt 350 mW
Operating Junction Temperature Tj 150°C
Storage Temperature Tstg -65°C to 150°C
Operating Temperature Toper -55°C to 125°C
1/3 December 1997
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Micro-LID Transistors
LDTBFW30 and LDTBFW30T
______________________________________________________________________________________
Outline / Schematic:
Dimensions / Marking:
Length .075′′ + .003′′ Post 1 (Emitter) .015′′ x .010′′ typ
Width .040′′ + .003′′ Post 2 (Base) .015′′ x .010′′ typ
Height .035′′ + .003′′ Post 3,4 (Collector) .015′′ x .012′′ typ
Marking on back of package : Gray Stripe over Emitter and Red Dot in Center
(post down configuration)
Standard In-Process Screening Requirements:
Ø Semiconductor die and Micro-LID package visual inspection
Ø Wire pull test
Ø 24 hour stabilization bake at 150°C
Ø 10 temperature cycles from –55°C to 125°C
Ø 100% electrical test of dc characteristics at 25°C
Ø Final visual inspection
________________________________________________________________
2/3 December 1997
.075
.040
4
3 2
1
.035
SUBSTRATE / CIRCUIT BOARD
1
2
3, 4
TOP VIEW
END VIEW
SIDE VIEW
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Micro-LID Transistors
LDTBFW30 and LDTBFW30T
Electrical Characteristics (25°C Ambient)
Parameter Symbol Min Typ Max Units
Collector-Base Breakdown BVcbo 20 -- -- V
Ic = 100 uA, Ie = 0
Collector-Emitter Breakdown* BVceo 10 -- -- V
Ib = 0, Ic = 10 mA
Emitter-Base Breakdown BVebo 2.5 -- -- V
Ic = 0, Ie = 100 uA
Collector-Base Cutoff Current Icbo -- -- 50 nA
Vcb = 10 V
DC Forward Current Gain* Hfe
Ic = 25 mA, Vce = 5 V 25 -- --
Ic = 50 mA, Vce = 5 V 25 -- --
Collector Capacitance Cobo -- -- 1.5 pF
Vcb = 5 V, Ie = 0
f = 1 MHz
Gain Bandwidth Product fT -- 1.6 -- GHz
Ic = 50 mA, Vce = 5 V
f = 500 MHz
Noise Figure NF -- -- 5 dB
Ic = 2 mA, Vce = 5 V
f = 500 MHz
* Pulse test, pulse width < 300 usec, duty cycle < 2%
3/3 December 1997
www.microlid.com sales@microlid.com
