Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient75 100 °C/W
HEXFET® Power MOSFET
These P-Channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET® power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for use in battery
and load management.
A thermally enhanced large pad leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power MOSFET with the
industry's smallest footprint. This package, dubbed the Micro3™, is ideal
for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA
cards. The thermal resistance and power dissipation are the best available.
Thermal Resistance
VDSS = -20V
RDS(on) = 0.065Ω
lUltra Low On-Resistance
lP-Channel MOSFET
lSOT-23 Footprint
lLow Profile (<1.1mm)
lAvailable in Tape and Reel
lFast Switching
lLead-Free
lRoHS Compliant, Halogen-Free
Description
Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.7
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.2 A
IDM Pulsed Drain Current -22
PD @TA = 25°C Power Dissipation 1.3
PD @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
EAS Single Pulse Avalanche Energy11 mJ
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
Micro3™
S
G1
2
D3
IRLML6402PbF
Form Quantity
IRLML6402TRPbF Micro3
™
(SOT-23) Tape and Reel 3000 IRLML6402TRPbF
Package Type
Standard Pack
Orderable Part NumberBase Part Number
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IRLML6402PbF
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V
trr Reverse Recovery Time ––– 29 43 ns TJ = 25°C, IF = -1.0A
Qrr Reverse RecoveryCharge ––– 11 17 nC di/dt = -100A/μs
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
-1.3
-22
A
S
D
G
** For recommended footprint and soldering techniques refer to application note #AN-994.
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting TJ = 25°C, L = 1.65mH
RG = 25Ω, IAS = -3.7A.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient ––– -0.009 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.050 0.065 VGS = -4.5V, ID = -3.7A
––– 0.080 0.135 VGS = -2.5V, ID = -3.1A
VGS(th) Gate Threshold Voltage -0.40 -0.55 -1.2 V VDS = VGS, ID = -250μA
gfs Forward Transconductance 6.0 ––– ––– S VDS = -10V, ID = -3.7A
––– ––– -1.0 VDS = -20V, VGS = 0V
––– ––– -25 VDS = -20V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
QgTotal Gate Charge ––– 8.0 12 ID = -3.7A
Qgs Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 VGS = -5.0V
td(on) Turn-On Delay Time ––– 350 ––– VDD = -10V
trRise Time ––– 48 ––– ID = -3.7A
td(off) Turn-Off Delay Time ––– 588 ––– RG = 89Ω
tfFall Time ––– 381 ––– RD = 2.7Ω
Ciss Input Capacitance ––– 633 ––– VGS = 0V
Coss Output Capacitance ––– 145 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
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IRLML6402PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.25V
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.25V
10
100
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V = -15V
20μs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-3.7A
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IRLML6402PbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
110 100
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss
= C
gs
+ C
gd, C
ds
SHORTED
Crss
= C
gd
Coss
= C
ds
+ C
gd
036912
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-3.7A
V =-10V
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
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IRLML6402PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
25 50 75 100 125 150
0
5
10
15
20
25
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.7A
-3.0A
-3.7A
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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IRLML6402PbF
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
2.0 3.0 4.0 5.0 6.0 7.0
-VGS, Gate -to -Source Voltage ( V )
0.02
0.04
0.06
0.08
0.10
0.12
0.14
RDS(on) , Drain-to -Source Voltage ( Ω )
Id = -3.7A
0 5 10 15 20 25 30
-ID , Drain Current ( A )
0.00
0.04
0.08
0.12
0.16
0.20
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
VGS = -4.5V
VGS = -2.5V
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6402PbF
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
0.08
0.88
0.01
0.89
0.95 B S C
MI L L IME T E R S
MIN
e
E
E1
D
L
A
A1
A2
c
M
O
B
S
Y
MI NMAX MAX
.036
.0375 B S C
DIME NS IONS
INCHE S
b0.30
bbb
0.15
.008
ccc .006
0.25 BS CL1
L 0.40 0.60
.0118 B S C
aaa
0.20
.004
0° 8° 8°0°
2.80
1.20
0
E1
E
D5
6
3
12 ccc C B A
B5
6
e
e1
A2
A
A1
bbb C A B
3X b aaa C
3 S URF 0
3X L
L1
H4
7
2.10
e1 1.90 B S C .075 B S C
.0119
.0032
.111
.083
.048 .055
.119
.103
.0196
.0078
.0039
.044
.0004
.035 .040
.0236.0158
1.02
0.20
0.50
2.64
3.04
1.40
1.12
0.10
0.10
1.90
[.075]
0.95
[.0375]
0.972
[.038]
2.742
[.1079]
0.802
[.031]
R E COMME NDE D F OOT PR INT
3X
3X
NOT ES
1. DIMENS IONING AND T OL ERANCING PE R ASME Y14. 5M-1994.
4 DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5 D AT U M A AND B T O B E DE T E RMI N E D AT DAT U M P L AN E H .
6 D I ME NS I ON S D AND E 1 AR E ME AS UR E D AT DAT U M P L ANE H .
2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.
3. CONTROLL ING DIMENSION: MILLIMET ER.
7 DIMENSION L IS T HE LEAD LENGTH FOR SOLDERING TO A S UBST RATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB.
F = IRLML6401
A2001 A27
Notes: This part marking information applies to devices produced after 02/26/2001
ASSEMBLY LOT CODE
LEAD-FREE
DATE CODE
E = IRLML6402
X = PART NUMBER CODE REFERENCE:
D = IRLML5103
C = IRLML6302
B = IRLML2803
A = IRLML2402
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (27-52) IF PRECEDED BY A LETTER
Y
82008
32003
12001
YEAR
2002 2
52005
2004 4
2007
2006
7
6
2010 0
2009 9
YEAR Y
C03
WORK
WEEK
01
02
A
W
B
04 D
24
26
25
X
Z
Y
WORK
WEEK W
H = IRLML5203
G = IRLML2502
K
H
G
F
E
D
C
B
2006
2003
2002
2005
2004
2008
2007
2010
2009 J
Y51
29
28
30
C
B
D
50 X
I = IRLML0030
J = IRLML2030
L = IRLML0060
M = IRLML0040
K = IRLML0100
N = IRLML2060
P = IRLML9301
R = IRLML9303
Cu WIRE
HALOGEN FREE
PART NUMBER
52 Z
DATE CODE EXAMPLE:
YWW = 432 = DF
YWW = 503 = 5C
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
W = IRFML8244
V = IRLML6346
U = IRLML6344
T = IRLML6246
S = IRLML6244
Y = IRLML2246
X = IRLML2244
Z = IRFML9244
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6402PbF
Micro3™(SOT-23/TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6402PbF
MS L 1
(per J E DE C
J-S TD-020D
††
)
RoHS compliant
Yes
Qualification information
†
Qualification level
Cons umer
(per JEDEC JES D47F
††
guidelines)
Moisture Sensitivity Level Micro3™ (SOT-23)
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Revision History
Date Comment
•
Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
•
Added Qualification table -Qual level "Consumer" on page 9.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
4/28/2014
