Semiconductor Group 1 04.97
TEMPFET BTS 113A
3
2
1
Features
●N channel
●Logic level
●Enhancement mode
●Temperature sensor with thyristor characteristic
●The drain pin is electrically shorted to the tab
Pin 1 2 3
GDS
Type VDS IDRDS(on) Package Ordering Code
BTS 113A 60 V 11.5 A 0.17 ΩTO-220AB C67078-S5015-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 60 V
Drain-gate voltage, RGS = 20 kΩVDGR 60
Gate-source voltage VGS ± 10
Continuous drain current, TC = 25 °CID11.5 A
ISO drain current
TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V ID-ISO 2.2
Pulsed drain current, TC = 25 °CID puls 46
Short circuit current, Tj = – 55 ... + 150 °CISC 27
Short circuit dissipation, Tj = – 55 ... + 150 °CPSCmax 400 W
Power dissipation Ptot 40
Operating and storage temperature range Tj,Tstg – 55 ... + 150 °C
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
Thermal resistance
Chip-case
Chip-ambient Rth JC
Rth JA
≤ 3.1
≤ 75
K/W
Semiconductor Group 2
Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA V(BR)DSS 60 – – V
Gate threshold voltage
VGS = VDS, ID = 1 mA VGS(th) 1.6 2.0 2.5
Zero gate voltage drain current
VGS = 0 V, VDS = 60 V Tj = 25 °C
Tj = 125 °C
IDSS
–
–0.1
10 1.0
100
µA
Gate-source leakage current
VGS = ±20 V, VDS = 0 Tj = 25 °C
Tj = 150 °C
IGSS
–
–10
2100
4nA
µA
Drain-source on-state resistance
VGS = 4.5 V, ID = 5.8 A RDS(on) – 0.14 0.17 Ω
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 ×ID×RDS(on)max,ID = 5.8 A gfs 4.5 7.5 – S
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz Ciss – 420 560 pF
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz Coss – 160 250
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz Crss – 60 110
Turn-on time ton, (ton = td(on) + tr)
VCC = 30 V, VGS = 5.0 V, ID = 3.0 A,
RGS = 50 Ω
td(on) –1525ns
t
r–5580
Turn-off time toff, (toff = td(off) + tf)
VCC = 30 V, VGS = 5.0 V, ID = 3.0 A,
RGS = 50 Ω
td(off) –4560
t
f–4055
BTS 113A
Semiconductor Group 3
Electrical Characteristics (cont’d)
at Tj = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Continuous source current IS– – 11.5 A
Pulsed source current ISM ––46
Diode forward on-voltage
IF = 28 A, VGS = 0 VSD – 1.5 1.8 V
Reverse recovery time
IF = IS, diF/dt = 100 A/µs, VR = 30 V t rr –60–ns
Reverse recovery charge
IF = IS, diF/dt = 100 A/µs, VR = 30 V Q rr – 0.10 – µC
Temperature Sensor
Forward voltage
ITS(on) = 5 mA, Tj = – 55 ... + 150 °C
Sensor override, tp≤ 100 µs
Tj = – 55 ... + 160 °C
VTS(on) –
–
1.4
–
1.5
10
V
Forward current
Tj = – 55 ... + 150 °C
Sensor override, tp≤ 100 µs
Tj = – 55 ... + 160 °C
ITS(on) –
–
–
–
5
600
mA
Holding current, VTS(off) = 5.0 V, Tj = 25 °C
Tj = 150 °CIH0.05
0.05 0.3
0.2 0.5
0.3
Switching temperature
VTS = 5.0 V TTS(on) 150 – – °C
Turn-off time
VTS = 5.0 V, ITS(on) = 2 mA toff 0.5 – 2.5 µs
BTS 113A
Semiconductor Group 4
Examples for short-circuit protection
at Tj = – 55 ... + 150 °C, unless otherwise specified.
Parameter Symbol Examples Unit
12–
Drain-source voltage VDS 15 30 – V
Gate-source voltage VGS 5.0 3.5 –
Short-circuit current ISC 27 12.6 – A
Short-circuit dissipation PSC 400 380 – W
Response time
Tj = 25 °C, before short circuit tSC(off) 20 20 – ms
BTS 113A
Short-circuit protection ISC = f (VDS)
Parameter:V
GS
DiagramtodetermineISCforTj=–55...+150˚C
Max. gate voltage VGS(SC) = f (VDS)
Parameter: Tj= – 55 ... + 150 °C
Semiconductor Group 5
Max. power dissipation Ptot = f (TC)
Typical output characteristics ID = f (VDS)
Parameter:t
p
80 =µs
Typ. drain-source on-state resistance
RDS(on) = f (ID)
Parameter:V
GS
Safe operating area ID = f (VDS)
Parameter: D = 0.01, TC=25°C
BTS 113A
Semiconductor Group 6
Drain-source on-state resistance
RDS(on) = f (Tj)
Parameter: ID= – 5 A, VGS = 4.5 V
Typ. transfer characteristic
ID = f (VGS)
Parameter:t
p
= 80 µs, VDS = – 25 V
Gate threshold voltage VGS(th) = f (Tj)
Parameter:V
DS = VGS,ID= – 1 mA
Typ. transconductance gfs = f (ID)
Parameter: tp = 80 µs, VDS = – 25 V
BTS 113A
Semiconductor Group 7
Continuous drain current ID=f (TC)
Parameter: VGS ≥ 4.5 V
Typ. gate-source leakage current
IGSS =f (TC)
Parameter: VGS = 10 V, VDS = 0
Forward characteristics of reverse diode
IF = f (VSD)
Parameter:T
j
,t
p
= 80 µs
Typ. capacitances C = f (VDS)
Parameter: VGS = 0, f= 1 MHz
BTS 113A
Semiconductor Group 8
Transient thermal impedance ZthJC = f (tp)
Parameter:D = tp/T
BTS 113A
Semiconductor Group 9
BTS 113A
Package Outlines
TO 220 AB Ordering Code
Standard C67078-S5015-A3 TO 220 AB Ordering Code
SMD Version E 3045 A C67078-S5015-A4
(Tape & reel)
3.7
9.5
9.9
4.6
0.75 1.05
2.542.54
17.5
2.8
12.8
0.5
2.4
13.5
9.2
15.6
1.3
4.4
GPT05155
1)
3) max. 14.5 by dip tinning press burr max. 0.05
2) dip tinning
1) punch direction, burr max. 0.04
3)
2) 1
