© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 5 1Publication Order Number:
DAP222/D
DAP222, DAP202U
Preferred Device
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. The
DAP222 device is housed in the SC−75/SOT−416 package which is
designed for low power surface mount applications, where board
space is at a premium. The DAP202U device is housed in the
SC−70/SOT−323 package.
Features
•Fast trr
•Low CD
•Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Reverse Voltage VR80 Vdc
Peak Reverse Voltage VRM 80 Vdc
Forward Current IF100 mAdc
Peak Forward Current IFM 300 mAdc
Peak Forward Surge Current IFSM(1) 2.0 Adc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation PD150 mW
Junction Temperature TJ150 °C
Storage Temperature Tstg −55 ~ +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
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Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping†
ORDERING INFORMATION
DAP222 SC−75 3000 / Tape & Reel
DAP202U SC−70 3000 / Tape & Reel
SC−75
CASE 463
STYLE 4
MARKING
DIAGRAMS
12
3
1
2
3SC−70
CASE 419
DAP222T1 SC−75 3000 / Tape & Reel
DAP222T1G SC−75
(Pb−Free) 3000 / Tape & Reel
† For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ANODE
3
12
CATHODE
DAP202UG SC−70
(Pb−Free) 3000 / Tape & Reel
P9 M G
G
1
P9, NB = Device Codes
M = Date Code*
G= Pb−Free Package
*Date Code orientation and/or orientation may
vary depending upon manufacturing location.
DAP222G SC−75
(Pb−Free) 3000 / Tape & Reel
NB M G
G
(Note: Microdot may be in either location)
1
DAP222, DAP202U
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current IRVR = 70 V − 0.1 mAdc
Forward Voltage VFIF = 100 mA − 1.2 Vdc
Reverse Breakdown Voltage VRIR = 100 mA80 − Vdc
Diode Capacitance CDVR = 6.0 V, f = 1.0 MHz − 3.5 pF
Reverse Recovery Time DAP222
DAP202U trr(2)
ttt(3) IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR
IF = 5.0 mA, VR = 6.0 V, RL = 50 W, Irr = 0.1 IR
−
−4.0
10.0 ns
1. t = 1 mS
2. trr Test Circuit for DAP222 in Figure 4.
3. trr Test Circuit for DAP202U in Figure 5.
TYPICAL ELECTRICAL CHARACTERISTICS
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
1.75
0
VR, REVERSE VOLTAGE (VOLTS)
1.5
1.25
1.0
0.75
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 1. Forward Voltage Figure 2. Reverse Current
Figure 3. Diode Capacitance
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (μA)
TA = 85°C
TA = −40°C
TA = 25°C
DAP222, DAP202U
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3
A
RL
trtp
t
10%
90%
VRtp = 2 ms
tr = 0.35 ns
IF
trr
t
Irr = 0.1 IR
IF = 5.0 mA
VR = 6 V
RL = 100 W
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit for the DAP222
A
RL
trtp
t
10%
90%
VRtp = 2 ms
tr = 0.35 ns
IF
trr
t
Irr = 0.1 IR
IF = 5.0 mA
VR = 6 V
RL = 100 W
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
Figure 5. Reverse Recovery Time Test Circuit for the DAP202U
DAP222, DAP202U
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4
PACKAGE DIMENSIONS
SC−75 (SOT−416)
CASE 463−01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
−E−
−D−
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70 0.004 0.006 0.008
0.061 0.063 0.065
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
DAP222, DAP202U
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5
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE M
AA2
De1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HEDIM
AMIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.7 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.425 REF
0.028 REF
0.026 BSC
0.017 REF
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DAP222/D
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