MJE18002D2 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 

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The MJE18002D2 use a newly developed technology, so called H2BIP*, to design

the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.

The main advantages brought by these new transistors are:

•Improved Global Efficiency Due to the Low Base Drive Requirements

•DC Current Gain Typically Centered at 45

•Extremely Low Storage Time Variation, Thanks to the Antisaturation Network

•Easy to Use Thanks to the Integrated Collector/Emitter Diode

The MOTOROLA “Sig Sixma” philosophy provides tight and reproductible

parameter distribution.

*High speed High gain BIPolar transistor

**Power Factor Control

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

ÎÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎÎ

450

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Breakdown Voltage

ÎÎÎÎÎÎÎ

VCBO

ÎÎÎÎÎÎÎÎ

1000

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Breakdown Voltage

ÎÎÎÎÎÎÎ

VCES

ÎÎÎÎÎÎÎÎ

1000

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎÎÎÎ

ICM

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

Base Current — Peak (1)

ÎÎÎÎÎÎÎ

IBM

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Total Device Dissipation @ TC = 25

*Derate above 25°C

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.4

ÎÎÎÎ

Watt

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Temperature

ÎÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to 150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

ÎÎÎÎÎÎÎ

RθJC

RθJA

ÎÎÎÎÎÎÎÎ

2.5

62.5

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

260

ÎÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJE18002D2/D

 Motorola, Inc. 1995



POWER TRANSISTORS

2 AMPERES

1000 VOLTS

50 WATTS

CASE 221A–06

TO–220AB

MJE18002D2

2 Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

450

ÎÎÎÎ

570

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEO, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

Collector Cutoff Current (VCE = 500 V, VEB = 0)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ICES

ÎÎÎÎ

ÎÎÎ

100

500

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Cutoff Current

(VEB = 10 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 0.4 Adc, IB = 40 mAdc)

(IC = 1 Adc, IB = 0.2 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

0.78

0.87

ÎÎÎ

1.1

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 0.4 Adc, IB = 40 mAdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

0.36

0.5

ÎÎÎ

0.6

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 1 Adc, IB = 0.2 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

0.4

0.65

ÎÎÎ

0.75

1.2

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.4 Adc, VCE = 1 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 1 Adc, VCE = 1 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain Bandwidth

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Input Capacitance

(VEB = 8 Vdc)

ÎÎÎÎ

Cib

ÎÎÎÎ

340

ÎÎÎ

500

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DIODE CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Forward Diode Voltage

(IEC = 1 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

VEC

ÎÎÎÎ

1.2

ÎÎÎ

1.5

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IEC = 0.2 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

0.9

0.6

ÎÎÎ

1.2

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IEC = 0.4 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

0.6

ÎÎÎ

1.3

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Forward Recovery Time

(IF = 0.2 Adc, di/dt = 10 A/µs)

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

tfr

ÎÎÎÎ

540

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IF = 0.4 Adc, di/dt = 10 A/µs)

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

517

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IF = 1 Adc, di/dt = 10 A/µs)

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

480

ÎÎÎ

ÎÎÎÎ

MJE18002D2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

IC = 1 Adc, IB1 = 0.2 Adc

IB2 = 0.5 Adc

VCC = 300 Vdc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ton

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.5 Adc

VCC = 300 Vdc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

toff

ÎÎÎÎ

0.95

ÎÎÎ

1.5

ÎÎÎÎ

1.25

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 0.4 Adc

IB1 = 40 mAdc

IB2 = 0.2 Adc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

130

120

ÎÎÎÎ

175

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 0.4 Adc

IB1 = 40 mAdc

IB2 = 0.2 Adc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

0.55

0.7

ÎÎÎÎ

0.65

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.2 Adc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

110

100

ÎÎÎÎ

175

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 0.8 Adc

IB1 = 160 mAdc

IB2 = 160 mAdc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

130

140

ÎÎÎÎ

175

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 0.8 Adc

IB1 = 160 mAdc

IB2 = 160 mAdc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

2.1

ÎÎÎ

ÎÎÎÎ

2.4

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

IB2 = 160 mAdc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

275

350

ÎÎÎÎ

350

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 1 Adc

IB1 = 0.2 Adc

IB2 = 0.5 Adc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 1 Adc

IB1 = 0.2 Adc

IB2 = 0.5 Adc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

1.05

1.45

ÎÎÎÎ

1.2

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.5 Adc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

100

115

ÎÎÎÎ

150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC SATURATION VOLTAGE

ÎÎÎÎÎÎÎÎ

Dynamic Saturation

Voltage:

Determined 1 µs and

3 µs respectively after

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎ

IC = 0.4 Adc

IB1 = 40 mA

VCC = 300 V

ÎÎÎ

@ 1 µs

ÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎÎ

VCE(dsat)

ÎÎÎÎ

ÎÎÎ

7.4

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Voltage:

Determined 1 µs and

3 µs respectively after

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎ

IB1 = 40 mA

VCC = 300 V

ÎÎÎ

@ 3 µs

ÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

2.5

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

µs and

3 µs respectively after

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎ

IC = 1 Adc

IB1 = 0.2 A

VCC = 300 V

ÎÎÎ

@ 1 µs

ÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

11.7

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎ

IB1 = 0.2 A

VCC = 300 V

ÎÎÎ

@ 3 µs

ÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

1.3

ÎÎÎÎ

MJE18002D2

4 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

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MJE18002D2/D

*MJE18002D2/D*

◊