DSP8-08AS Standard Rectifier VRRM = 2x 800 V I FAV = 8A VF = 1.08 V Phase leg Part number DSP8-08AS Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b DSP8-08AS Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 900 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 800 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 800 V TVJ = 25C 10 A TVJ = 150C 0.2 mA TVJ = 25C 1.16 V 1.35 V 1.08 V 8A IF = 16 A IF = 8A IF = 16 A TVJ = 150 C TC = 160C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1.34 V T VJ = 175 C 8 A TVJ = 175 C 0.79 V d = 0.5 for power loss calculation only Ptot typ. VR = 800 V IF = forward voltage drop min. 33 m 1.5 K/W K/W 0.25 TC = 25C 100 W t = 10 ms; (50 Hz), sine TVJ = 45C 120 A t = 8,3 ms; (60 Hz), sine VR = 0 V 130 A t = 10 ms; (50 Hz), sine TVJ = 150 C 100 A t = 8,3 ms; (60 Hz), sine VR = 0 V 110 A t = 10 ms; (50 Hz), sine TVJ = 45C 72 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 70 As TVJ = 150 C 50 As 50 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 4 pF 20130107b DSP8-08AS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 25 Unit A -55 150 C -55 175 C Weight 2 FC 20 mounting force with clip g 60 N Product Marking XXXXXXXXX Part No. IXYS yyww z Logo Date Code Assembly Line 000000 Assembly Code Ordering Standard Part Number DSP8-08AS Similar Part DSP8-08S DSP8-08A DSP8-12AS DSP8-12S DSP8-12A DSP8-12AC Equivalent Circuits for Simulation I V0 R0 Package TO-263AB (D2Pak) (2) TO-220AB (3) TO-263AA (D2Pak) (3) TO-263AB (D2Pak) (2) TO-220AB (3) ISOPLUS220AB (3) * on die level Delivery Mode Tube Quantity 50 Code No. 504315 Voltage class 800 800 1200 1200 1200 1200 T VJ = 175C Rectifier V 0 max threshold voltage 0.79 R 0 max slope resistance * 30 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Marking on Product DSP8-08AS V m Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b DSP8-08AS Outlines TO-263 (D2Pak) Dim. A Supplier Option D1 c2 A1 H D E L1 W 4 L 1 2 3 c 2x e 3x b2 3x b W E1 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2/4 A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b DSP8-08AS Rectifier 100 20 102 50 Hz, 80% VRRM VR = 0 V 16 80 12 IF TVJ = 150C 125C 8 25C [A] TVJ = 45C IFSM TVJ = 45C 2 It [A] 2 TVJ = 150C [A s] 60 TVJ = 150C 4 0 0.6 0.8 1.0 1.2 1.4 40 0.001 1.6 101 0.01 0.1 1 VF [V] t [s] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current 1 2 3 4 5 6 7 8 10 t [ms] 2 Fig. 3 I t versus time per diode 28 RthJA: 4 K/W 8 K/W 10 K/W 12 K/W 16 K/W 20 K/W 16 DC = 1 0.5 0.4 0.33 0.17 0.08 12 Ptot 8 DC = 1 0.5 0.4 0.33 0.17 0.08 24 20 IF(AV)M 16 [A] 12 [W] 8 4 4 0 0 0 2 4 6 8 10 12 0 25 50 75 100 125 150 175 200 0 50 Tamb [C] IF(AV)M [A] 100 150 200 TC [C] Fig. 5 Max. forward current vs. case temperature Fig. 4 Power dissipation vs. direct output current and ambient temperature 1.6 1.2 Constants for ZthJC calculation: ZthJC i 0.8 [K/W] 0.4 Rthi (K/W) ti (s) 1 0.155 0.0005 2 0.332 0.0095 3 0.713 0.17 4 0.3 5 0.00001 0.8 0.00001 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b