US1JDFQ / US1MDFQ
Document number: DS38447 Rev. 2 - 2
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May 2016
© Diodes Incorporated
US1JDFQ / US1MDFQ
NEW PROD U C T
1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER
Product Summary (@TA = +25°C)
VRRM (V)
IO (A)
IR(MAX) A)
600, 1000
1
5
Description and Applications
The US1JDFQ and US1MDFQ are rectifiers packaged in the low
profile D-FLAT package. Providing ultra-fast recovery time for high
efficiency, this device is ideal for use in applications such as:
Reverse Protection
Switching
Blocking
Features and Benefits
Glass Passivated Die Construction
Ultra-Fast Recovery Time for High Efficiency
Surge Overload Rating to 30A Peak
High Current Capability
Low Profile Design, Package Height Less than 1.1mm
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: D-FLAT
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.035 grams (Approximate)
Ordering Information (Note 5)
Part Number
Qualification
Case
Packaging
US1JDFQ-13
Automotive
D-FLAT
10,000/Tape & Reel
US1MDFQ-13
Automotive
D-FLAT
10,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Green
Top View
D-FLAT
U1J or U1M = Product Type Marking Code
= Manufacturers’ Code Marking
YWW = Date Code Marking
Y = Last Digit of Year (ex: 6 for 2016)
WW = Week Code (01 to 53)
AB = Foundry and Assembly Code
US1JDFQ / US1MDFQ
Document number: DS38447 Rev. 2 - 2
2 of 5
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May 2016
© Diodes Incorporated
US1JDFQ / US1MDFQ
NEW PROD U C T
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
US1JDFQ
US1MDFQ
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
600
1000
V
RMS Reverse Voltage
VR(RMS)
420
700
V
Average Rectified Output Current @TT = +25°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
30
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Typical Thermal Resistance, Junction to Terminal (Note 8)
RJT
44
°C/W
Typical Thermal Resistance, Junction to Ambient (Note 8)
RJA
80
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
US1JDFQ
US1MDFQ
Unit
Minimum Reverse Breakdown Voltage (Note 6) @IR = 5μA
V(BR)R
600
1000
V
Maximum Forward Voltage Drop @IF = 1.0A
VF
1.7
V
Peak Reverse Current @TA = +25°C
at Rated DC Blocking Voltage (Note 6) @TA = +100°C
IR
5.0
100
μA
Maximum Reverse Recovery Time (Note 7)
tRR
75
ns
Typical Total Capacitance (Note 10)
CT
10
pF
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See Figure 7.
8. Device mounted on FR-4 substrate, 1" * 1", 2oz, single-sided, PC boards with 0.1" * 0.15" copper pads.
9. Device mounted on FR-4 substrate, 0.4" * 0.5", 2oz, single-sided, PC boards with 0.2" * 0.25" copper pads.
10. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
I , DC FORWARD CURRENT (A)
F
Figure 1 Forward Current Derating
T , AMBIENT TEMPERATURE C)
A
0
0.20
0.40
0.60
0.80
1
1.20
25 50 75 100 125 150
Note 9
Note 8
0
IF(DC), DC FORWARD CURRENT (A)
I , INSTANTANEOUS FORWARD CURRENT (A)
F
Figure 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
001.
01.
1
10
05.10.15.20.25.30.
T = -55°C
A
T = 150°C
A
T = 25°C
A
T = 85°C
A
T = 100°C
A
T = 125°C
A
US1JDFQ / US1MDFQ
Document number: DS38447 Rev. 2 - 2
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May 2016
© Diodes Incorporated
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NEW PROD U C T
Figure 5 Total Capacitance
V , DC REVERSE VOLTAGE (V)
R
C , TOTAL CAPACITANCE (pF)
T
0
5
10
15
20
0 1 10 100
I AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 6 Forward Power Dissipation
PF , Average Forward Power Dissipation (W)
(av)
0
0.2
0.4
0.6
0.8
1
1.2
0 0.2 0.4 0.6 0.8 1 1.2
T = 150°C
J
Note 8
0
10
20
30
40
110 100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
I , INSTANTANEOUS REVERSE CURRENTA)
R
Figure 4 Typical Reverse Characteristics
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0001.
001.
01.
1
10
100
20 40 60 80 100
T = -55°C
A
T = 25°C
A
T = 85°C
A
T =100°C
A
T = 125°C
A
T = 150°C
A
f=1MHz
P , AVERAGE FORWARD POWER DISSIPATION (W)
F(AV)
Figure 3
US1JDFQ / US1MDFQ
Document number: DS38447 Rev. 2 - 2
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May 2016
© Diodes Incorporated
US1JDFQ / US1MDFQ
NEW PROD U C T
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
D-FLAT
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
D-FLAT
D-FLAT
Dim
Min
Max
A
0.90
1.10
b
1.25
1.65
c
0.10
0.40
D
2.25
2.95
E
3.95
4.60
k
2.80
-
HE
5.00
5.60
L
0.50
1.30
All Dimensions in mm
Dimensions
Value
(in mm)
C
4.65
G
2.80
X
1.85
X1
6.50
Y
1.70
H
D
E
L
b
A
c
Ek
X
G
C
X1
Y
Figure 7
(Note 11)
(Note 12)
11.
12.
tRR
US1JDFQ / US1MDFQ
Document number: DS38447 Rev. 2 - 2
5 of 5
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May 2016
© Diodes Incorporated
US1JDFQ / US1MDFQ
NEW PROD U C T
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