_Aolitron PRODUCT CATALOG ~ Devices. Inc. MEDIUM TO HIGH VOLTAGE CHIP NUMBER PN EPITAXIAL PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold (Polished silicon or 'Chrome Nickel Silver also available) Also available on: MOLY PEDESTAL 420" Size: .220" Diameter (5.59mm) (3.05mm) Thickness: .010' (0.25mm) BeO PEDESTAL | Size: .178" x .250" (4.45mm x 6.35mm) Thickness: .028' (0.71mm) 120" * (3.05mm) ASSEMBLY RECOMMENDATIONS It is advisable that: a) the chip be eutectically mounted with gold silicon preform 98/2%. b) 18 mil (0.457mm) aluminum wire be ultrasonically attached to the anode contact. Anode: -t06" x 106" (2.69mm x 2.69mm) TYPICAL ELECTRICAL CHARACTERISTICS AT 25C The following typical electrical characteristics apply for a completely finished component employing the chip number 503 in a DO-4 or equivalent case: RR In @ 80% VR VF @ If Ip Surge Maximum aa @ He osm = 1.0A > 50V <SpA 1.2V 20A >250A 300 ns >100V <SpA 1.2V 20A >250A 300 ns >200V <SpA 1.2V 20A >250A 300 ns >300V <SpA 1.2V 20A >250A 300 ns >400V <SpA 1.2V 20A >250A 500 ns TYPICAL DEVICE TYPES: 1N3899, 1N3900, 1N3901, IN3902 IF surge = 250A. C-123