SA-Series - Raychem / Tyco Electronics

SiBar Thyristor

Surge Protectors

SA and SC series thyristor products for overvoltage protection

Tyco Electronics SiBar®thyristor

surge protectors are designed to

protect sensitive telecommunications

equipment from the hazards caused

by lightning, power contact, and power

induction. These devices have high

surge capability to protect against

transient faults and high off-state

impedance, rendering them

transparent during normal system

operation.

Target Applications:

SiBar thyristor surge protectors are

designed specifically for

telecommunications and computer

telephony applications, including:

• Modems

• Fax machines

• PBX systems

• Phones

• POS systems

• Analog and digital linecards

• xDSL modes and splitters

• Other customer premise and

network equipment requiring

protection

Benefits:

• Effective protection for sensitive

telecom electronics

• Low leakage current

• Low power dissipation

• Fast, reliable operation

• No wear-out mechanisms

• Helps designers meet worldwide

telecom standards

• Reduced warranty and service costs

• Easy installation; tape and reel per

EIA 481 standards

Features:

• Bidirectional transient voltage protection

• High off-state impedance

• Low on-state voltage

• High surge capability

• Glass-passivated junctions

• Short-circuit failure mode

• Surface-mount technology

SiBar thyristor surge protectors

provide transient voltage protection

for telecommunications applications.

Fundamentals of SiBar Thyristor Surge Protection Devices

SiBar thyristor surge protectors are

bidirectional silicon devices that fold back in

the presence of transient overvoltage faults.

When the breakover voltage of a SiBar device

is exceeded, the device switches from high to

low impedance to protect sensitive

downstream equipment from harmful voltage

surges. The device remains latched in a low-

impedance state until the current decreases

below the hold current, at which point the

device returns to its high-impedance state.

SiBar devices may be used in conjunction

with PolySwitch®resettable fuses in

telecommunications applications, including

network equipment, customer premise

equipment, and primary protectors. Proper

selection of both devices can provide reliable

and cost-effective resettable overvoltage and

overcurrent protection. These devices help

designers to meet worldwide

telecommunications standards and to lower

equipment-service and warranty costs.

* Superseded by UL 1950, 3rd Edition for new designs.

Note: For more information on PolySwitch resettable fuses for overcurrent protection, please contact your local Raychem representative or visit our Web site

(www.circuitprotection.com)

Typical applications

Problem/solution

Industry standards and customer

specifications require telecommunications

equipment designers to protect against the

harmful effects of power cross, power

induction, and lightning surges. These

hazards can travel through the network and

local loop, resulting in equipment damage and

loss of service.

A SiBar thyristor surge protector, either by

itself or properly coordinated with a

PolySwitch overcurrent device, will assist in

protecting against these faults, minimizing

equipment damage and improving customer

satisfaction.

Customer premise equipment (CPE)

SiBar devices have been designed to assist

customer premise equipment manufacturers

meet the stringent requirements of

FCC part 68, UL1459/UL1950 3rd Edition,

UL497A, and ITU-T Recommendation K.21.

Examples of customer premise equipment

include:

• PBX systems

• Key telephone systems

• Modems

• Phone sets

• POS equipment

• Surge strips with communication ports

Network equipment

SiBar devices have been designed to assist

network equipment manufacturers meet the

stringent requirements of Telcordia GR-1089,

ITU-T Recommendations K.17, K.20, and K.45.

Examples of network equipment include:

• Analog and digital linecards

• Base stations

• Meter monitoring systems

• Multiplex/pairgain systems

• Remote terminal units

• Repeaters

Customer premise equipment protected with

SiBar and PolySwitch devices

Network equipment protected with SiBar and

PolySwitch devices

Symbol key:

SiBar thyristor surge protector (transient voltage protector)

PolySwitch resettable fuse (overcurrent protection device)

Grounded

Ungrounded

CPE CPE

Grounded

Linecard

Note:

T-R SiBar thyristor is optional;

refer to SiBar application notes

(www.circuitprotection.com)

SiBar thyristor surge protectors and PolySwitch resettable fuses are designed to work together to effectively protect telecommunications equipment

from transient overcurrent and overvoltage faults defined by regional agency specifications.

Specifications PolySwitch Resettable Fuse SiBar Surge Protector

ITU-T K.20 TR250, TS250, TSV250 TVB170SA, TVB200SA, TVB270SA

ITU-T K.21 TR250, TS250, TSV250 TVB170SA, TVB200SA, TVB270SA

ITU-T K.45 TR250, TS250, TSV250 TVB170SA, TVB200SA, TVB270SA

FCC Part 68 TR600-150, TS600-170 TVB270SA

UL 1459* TR600-150, TS600-170 TVB270SA

UL 1950 TR600-150, TS600-170 TVB270SA

Telcordia GR1089 TR600-160-RA, TS600-200-RA TVB170SC, TVB200SC, TVB270SC

Telcordia GR1089 Intrabuilding TR250, TS250, TSV250 TVB170SA, TVB200SA, TVB270SA

Selection Guide

Follow these steps to select the proper SiBar

thyristor surge protectors for your application:

1. Define the operating parameters for

the circuit:

•Maximum ambient operating

temperature

•Maximum system operating current

•Maximum operating voltage

(DC bias + peak ringing voltage)

•Maximum fault current

•System voltage damage threshold

2. Select a SiBar device with an off-state voltage

rating (VDM) above the maximum operating

voltage and a peak pulse current rating above

the maximum fault current.

3. Verify that the minimum hold current of the

device is above the maximum short-circuit

current of the system.

4. Verify that the maximum breakover voltage of

the device is below the system damage

threshold.

5. Verify that the circuit’s ambient operating

temperatures are within the SiBar device’s

operating temperature range.

6. Verify that the SiBar device’s dimensions fit

the application’s space considerations.

7. Independently evaluate and test the suitability

and performance of the SiBar device in the

application.

VDM VBO IHVTC1ITSM Lightning Current Wave Forms

Part max. max. min. max. typ min. FCC Telcordia ITU

number (V) (V) (mA) (V) (pF) (A) 5x320 µs 10x560 µs 10x160 µs 10x1000 µs 2x10 µs 5x310 µs

TVB270SC 270 370 175 5.0 50 60 100 100 200 100 500 100

TVB200SC 200 320 175 5.0 50 60 100 100 200 100 500 100

TVB170SC 170 265 175 5.0 50 60 100 100 200 100 500 100

TVB270SA 270 370 175 5.0 20 22 90 70 100 50 - 90

TVB200SA 200 320 175 5.0 20 22 90 70 100 50 - 90

TVB170SA 170 265 175 5.0 20 22 90 70 100 50 - 90

Notes (1) (2) (3) (4) (5) (5) (5) (5) (5) (5) -

Notes:

1. VDM measured per UL497B pulse requirements; max. off-state leakage current (IDM) = 5 µA.

2. Measured at a typical breakover current (IBO) = 230 mA.

3. C, measured at f = 1 MHz, 50-VDC bias, 1 VRMS

4. Peak on-state surge current (60 Hz, one cycle).

5. Refer to application notes (www.circuitprotection.com) for further details.

Electrical Characteristics (25° C, Unless Otherwise Specified)

Parameter Symbol Unit TVBxxxSA TVBxxxSC

Peak on-state surge current

(60Hz, one cycle) ITSM A2260

Critical rate-of-rise of on-state current

(max. 2 x 10-µs waveform, ISC =120A) di/dt A/µs 150 250

Critical rate-of-rise of off-state voltage

(linear waveform, VD= Rated VBO, Ti= 25°C) dv/dt V/µs 2000 2000

Storage temperature °C–65 to 150 –65 to 150

Operating temperature °C–40 to 125 –40 to 125

Junction temperature °C 175 175

Symbol Parameter Definition

VBO Breakdown voltage Maximum voltage across the device at breakdown

measured under a specified voltage and current rate of rise.

IBO Breakdown current Instantaneous current flowing at the breakover voltage (VBO)

IHHold current Minimum current required to maintain the device in the on-state condition.

ITOn-state current Current through the device in the on-state condition.

VTOn-state voltage Voltage across the device in the on-state condition at a specified current (IT)

VDM Maximum off-state Maximum DC voltage that can be applied to the device while maintaining

voltage it in the off-state condition.

IDM Off-state current Maximum DC value of current that results from the application of the maximum

off-state voltage.

IPP Peak pulse current Rated peak pulse current of specified amplitude and waveshape.

that may be applied without damage.

di/dt, dv/dt Critical rate of rise of Maximum current and voltage rate of rise the device can withstand

on-state current and voltage without damage.

Voltage-Current Characteristics

VDM VBO

IDM

IBO

IPP

The voltage-current (V-I) is useful in depicting

the electrical characteristics of the SiBar thyristor surge

protectors in relation to each other.

Typical Electrical Characteristics vs. Temperature

Off-state voltage vs. temperature

Temperature (°C)

Percentage of VDM at 25° C

–50

120%

115%

110%

105%

100%

95%

90%

85% –25 0 25 50 75 100 125 150

Hold current vs. temperature

Temperature (°C)

Percentage of IH at 25° C

–50

200%

180%

160%

140%

120%

100%

80%

60%

40%

20% –25 0 25 50 75 100 125 150

SiBar SA and SC devices are offered in industry-

standard “SMB” device packages for easy

installation.

All devices are bidirectional and may be oriented

in either direction during installation.

ABCD *

min. max. min. max. min. max. min. max.

Millimeters 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11

Inches 0.160 0.180 0.130 0.150 0.075 0.095 0.077 0.083

HJKPS

min. max. min. max. min. max. ref. min. max.

Millimeters 0.051 0.152 0.15 0.30 0.76 1.27 0.51 5.21 5.59

Inches 0.002 0.006 0.006 0.012 0.030 0.050 0.020 0.205 0.220

* D dimension is measured within dimension P.

Typical Electrical Characteristics vs. Temperature (continued)

Breakover voltage vs. temperature

Temperature (°C)

Percentage of VBO at 25° C

25 50 75 100 125 150–50

115%

110%

105%

100%

95%

90% –25 0

100

0.1

0.01

0.001

IDM (mA)

–25 0 25 50 75 100 125 150

Temperature (°C)

Off-state current vs. temperature

Product Dimensions

Product description

TVBXXXSA

TVBXXXSC

Devices per reel* 2500 pieces

Standard box quantity 10,000 pieces

Approximate box weight 3.5 lb

Recommended Pad Layout

The dimensions in the table below provide the

recommended pad layout for each SiBar device.

Pad dimensions

AB C

Millimeters 2.261 2.159 2.743

Inches 0.089 0.085 0.108

Part Marking System

Device code Part number*

REBD TVB270SC

RDBD TVB200SC

RCBD TVB170SC

REBB TVB270SA

RDBB TVB200SA

RCBB TVB170SA

Ordering Information

*Supplied in embossed tape and reel format per EIA 481-1 standards.

WARNING!

• Operation beyond maximum ratings or improper use may result in device damage.

• These devices are intended for protection against occasional overvoltage fault conditions and should not be used

when repeated fault conditions are anticipated.

Three-digit date code

Device code

Marking

Worldwide Headquarters

308 Constitution Drive

Menlo Park, CA 94025-1164

Tel (800) 227-7040

(650) 361-6900

Fax (650) 361-2508

www.circuitprotection.com

PolySwitch and SiBar are registered trademarks of Tyco Electronics Corporation.

All information, including illustrations, is believed to be reliable. Users, however, should independently evaluate the suitability of each product for their

application. Tyco Electronics makes no warranties as to the accuracy or completeness of the information, and disclaims any liability regarding its use.

Tyco electronics’ only obligations are those in the Company’s Standard Terms and Conditions of Sale for this product, and in no case will Tyco

Electronics be liable for any incident, indirect, or consequential damages arising from the sale, resale, use, or misuse of the product. Specifications

are subject to change without notice. In addition, Tyco Electronics reserves the right to make changes–without notification to Buyer–to materials or

processing that do not affect compliance with any applicable specification.