MSC0942A.DOC 11-03-98
2N2151
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS
SYMBOL
CHARACTERISTIC
VALUE
UNITS
VCBO*Collector-Base Voltage 150 V
VCEO*Collector-Emitter Voltage 100 V
VEBO*Emitter-Base Voltage 8V
IC*Peak Collector Current 10 A
IC*Continuous Collector Current 5A
IB*Continuous Base Current 2A
TSTG*Storage Temperature -65 to 200 °°C
TJ*Operating Junction Temperature -65 to 200 °°C
*Lead Temperature 1/16"
From Case for 10 Sec. 230 °°C
PT*Power Dissipation
TA = 25°°C
TC = 100°°C2
30
W
W
θθ JC Thermal Resistance
Junction to Case 3.33 °°C/W
5 Amp, 100V,
Planar, NPN
Power Transistors
JAN, JANTX
FEATURES:
• High Reliability
• Greater Gain Stability
TO-59
APPLICATIONS:
• Fast Switching
• High Frequency Switching and Amplifying
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
* Indicates JEDEC registered data.
MSC0942A.DOC 11-03-98
2N2151
ELECTRICAL CHARACTERISTICSELECTRICAL CHARACTERISTICS
(25°°Case Temperature Unless Otherwise Noted) VALUE
SYMBOL CHARACTERISTIC TEST CONDITIONS
Min.
Max
Units
BVCBO*Collector-Base Voltage IC = 100 µAdc, Cond. D 150 ---- Vdc
BVCEO*Collector-Emitter
Voltage (Note 1) IC = 50 mAdc, Cond. D 100 ---- Vdc
BVEBO*Emitter-Base Voltage IE = 2 µAdc, Cond. D 8---- Vdc
ICEO*Collector-Emitter
Cutoff Current VCE = 120 Vdc Cond. D ---- 5µAdc
ICEX*Collector-Emitter
Cutoff Current VCE = 120 Vdc, VEB = 0.5 Vdc, Cond. A
VCE = 120 Vdc, VEB = 0.5 Vdc, Cond. A TA = 150°°C----
---- 5
100 µAdc
µA
ICBO*Collector-Base
Cutoff Current VCB = 120 Vdc, Cond. D ---- 5µAdc
hFE* DC Current Gain
(Note 1)
IC = 1 Adc, VCE = 5 Vdc
IC = 0.5 Adc, VCE = 5 Vdc
IC = 0.1 Adc, VCE = 5 Vdc
40
40
40
120
120
----
----
----
----
hFE* AC Current Gain IC = 0.1 Adc, VCE = 30 Vdc, f = 1 KHz 40 160 ----
VCE(sat)*Collector Saturation
Voltage (Note 1) IC = 1 Adc, IB = 0.1 Adc ---- 1.0 Vdc
VBE(sat)* Base Saturation
Voltage (Note 1) IC = 1 Adc, IB = 0.1 Adc ---- 1.2 Vdc
VBE(on)*Base On-Voltage
(Note 1) IC = 1 Adc, VCE = 2 Vdc ---- 1.2 Vdc
fT*Gain-Bandwidth
Product IC = 1 Adc, VCE = 30 Vdc, f = 10 MHz 10 70 MHz
Cob*Output Capacitance VCB = 20 Vdc, 1E = 0, f = 1 MHz ---- 160 pf
Note 1: Pulse Test: PW = 300µµs, Duty Cycle ≤≤ 2%.
* Indicates JEDEC registered data.
MSC0942A.DOC 11-03-98
2N2151
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
NOTE: DIMENSIONS IN [ ] = MILLIMETERS
.424 [10.77]
.437 [11.10]
.090 [2.28]
.150 [3.81]
.320 [8.13]
.468 [11.88] .400 [10.16]
.455 [11.56]
.185 [4.70]
.215 [5.46]
.570 [14.48]
.763 [19.38]
+.010 [.254]
-.015 [.381]
Ø.318 [8.07]
Ø.380 [9.65]
Ø.055 [1.40]
ALL JEDEC DIMENSIONS AND NOTES APPLY
