1
BSZ0589NS
Rev.2.0,2016-07-11Final Data Sheet
(enlarged source interconnection)
TSDSON-8FL
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
MOSFET
OptiMOSTM5Power-MOSFET,30V
Features
•OptimizedforhighperformanceWirelesscharger
•VerylowFOMQOSSforhighfrequencySMPS
•LowFOMSWforhighfrequencySMPS
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 30 V
RDS(on),max 4.4 mΩ
ID17 A
QOSS 7.2 nC
QG(0V..4.5V) 5.2 nC
Type/OrderingCode Package Marking RelatedLinks
BSZ0589NS PG-TSDSON-8 FL 0589NS -
1) J-STD20 and JESD22
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OptiMOSTM5Power-MOSFET,30V
BSZ0589NS
Rev.2.0,2016-07-11Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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OptiMOSTM5Power-MOSFET,30V
BSZ0589NS
Rev.2.0,2016-07-11Final Data Sheet
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID-
-
-
-
17
10 AVGS=10V,TA=25°C
VGS=10V,TA=100°C
Pulsed drain current1) ID,pulse - - 68 A TA=25°C
Avalanche current, single pulse2) IAS - - 20 A TC=25°C
Avalanche energy, single pulse EAS - - 20 mJ ID=20A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - 2.1 - W TA=25°C,RthJA=60K/W
Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 4.6 K/W -
Device on PCB,
6 cm2 cooling area3) RthJA - - 60 K/W -
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 30 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 1.2 1.6 2 V VDS=VGS,ID=250µA
Zero gate voltage drain current IDSS -
-
0.1
10
1
100 µA VDS=24V,VGS=0V,Tj=25°C
VDS=24V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
4.4
3.5
5.3
4.4 mΩVGS=4.5V,ID=8A
VGS=10V,ID=8A
Gate resistance4) RG- 1 1.7 Ω-
Transconductance gfs 28 56 - S |VDS|>2|ID|RDS(on)max,ID=10A
1) See Diagram 3 for more detailed information
2) See Diagram 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
4) Defined by design. Not subject to production test.
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OptiMOSTM5Power-MOSFET,30V
BSZ0589NS
Rev.2.0,2016-07-11Final Data Sheet
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance1) Ciss - 700 950 pF VGS=0V,VDS=15V,f=1MHz
Output capacitance1) Coss - 220 300 pF VGS=0V,VDS=15V,f=1MHz
Reverse transfer capacitance Crss - 16 - pF VGS=0V,VDS=15V,f=1MHz
Turn-on delay time td(on) - 2.3 - ns VDD=15V,VGS=10V,ID=8A,
RG,ext=1.6Ω
Rise time tr- 2.4 - ns VDD=15V,VGS=10V,ID=8A,
RG,ext=1.6Ω
Turn-off delay time td(off) - 13 - ns VDD=15V,VGS=10V,ID=8A,
RG,ext=1.6Ω
Fall time tf- 2.0 - ns VDD=15V,VGS=10V,ID=8A,
RG,ext=1.6Ω
Table6Gatechargecharacteristics2)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 1.7 - nC VDD=15V,ID=8A,VGS=0to4.5V
Gate charge at threshold Qg(th) - 1.1 - nC VDD=15V,ID=8A,VGS=0to4.5V
Gate to drain charge Qgd - 1.3 - nC VDD=15V,ID=8A,VGS=0to4.5V
Switching charge Qsw - 1.9 - nC VDD=15V,ID=8A,VGS=0to4.5V
Gate charge total Qg- 5.2 - nC VDD=15V,ID=8A,VGS=0to4.5V
Gate plateau voltage Vplateau - 2.4 - V VDD=15V,ID=8A,VGS=0to4.5V
Gate charge total1) Qg- 11 15 nC VDD=15V,ID=8A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 4.8 - nC VDS=0.1V,VGS=0to4.5V
Output charge Qoss - 7.2 - nC VDD=15V,VGS=0V
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS- - 2.1 A TA=25°C
Diode pulse current IS,pulse - - 68 A TA=25°C
Diode forward voltage VSD - 0.71 1.1 V VGS=0V,IF=2.1A,Tj=25°C
Reverse recovery charge Qrr - 10 - nC VR=15V,IF=30A,diF/dt=400A/µs
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
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OptiMOSTM5Power-MOSFET,30V
BSZ0589NS
Rev.2.0,2016-07-11Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TA[°C]
Ptot[W]
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
2.5
Ptot=f(TA)
Diagram2:Draincurrent
TA[°C]
ID[A]
0 40 80 120 160
0
5
10
15
20
ID=f(TA);parameter:VGS
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TA=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJA[K/W]
10-5 10-4 10-3 10-2 10-1 100101102103
10-2
10-1
100
101
102
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJA=f(tp);parameter:D=tp/T
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OptiMOSTM5Power-MOSFET,30V
BSZ0589NS
Rev.2.0,2016-07-11Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0123
0
20
40
60
80
100
120
140
160
4.5 V
5 V
10 V
3.5 V
3.2 V
3 V
2.8 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[mΩ]
0 5 10 15 20
0
1
2
3
4
5
6
7
8
3.5 V
4 V
4.5 V
5 V
6 V 7 V 8 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
012345
0
40
80
120
160
150 °C 25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 40 80 120 160
0
40
80
120
160
200
gfs=f(ID);Tj=25°C
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OptiMOSTM5Power-MOSFET,30V
BSZ0589NS
Rev.2.0,2016-07-11Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[mΩ]
-60 -20 20 60 100 140 180
0
1
2
3
4
5
6
7
typ
RDS(on)=f(Tj);ID=8A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 5 10 15 20 25
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2
100
101
102
103
25 °C
150 °C
IF=f(VSD);parameter:Tj
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OptiMOSTM5Power-MOSFET,30V
BSZ0589NS
Rev.2.0,2016-07-11Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV[A]
100101102103
100
101
102
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 4 8 12
0
2
4
6
8
10
12
24 V
15 V
6 V
VGS=f(Qgate);ID=8Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
20
22
24
26
28
30
32
34
VBR(DSS)=f(Tj);ID=1mA
Gate charge waveforms
9
OptiMOSTM5Power-MOSFET,30V
BSZ0589NS
Rev.2.0,2016-07-11Final Data Sheet
5PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
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OptiMOSTM5Power-MOSFET,30V
BSZ0589NS
Rev.2.0,2016-07-11Final Data Sheet
RevisionHistory
BSZ0589NS
Revision:2016-07-11,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-07-11 Release of final version
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
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©2016InfineonTechnologiesAG
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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