N1313 TKIM TC-00003052 No. A2236-1/5
Semiconductor Components Industries, LLC, 2013
November, 2013
http://onsemi.com
NDFPD1N150C
Features
• On-resistance RDS(on)=100Ω(typ.)
• Input Capacitance Ciss=80pF(typ.)
• 10V drive
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
Drain to Source Voltage VDSS 1500 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID 0.1 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 0.2 A
Allowable Power Dissipation PD 2.0 W
Tc=25°C 20 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg - 55 to +150 °C
Electrical Characteristics at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS I
D=10mA, VGS=0V 1500 V
Zero-Gate Voltage Drain Current IDSS V
DS=1200V, VGS=0V 1 mA
Gate to Source Leakage Current IGSS V
GS=±30V, VDS=0V
±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2 4 V
Forward Transfer Admittance | yfs | VDS=20V, ID=50mA 0.1 S
Static Drain to Source On-State Resistance
RDS(on) ID=50mA, VGS=10V 100 150 Ω
Input Capacitance Ciss
VDS=30V, f=1MHz
80 pF
Output Capacitance Coss 9 pF
Reverse Transfer Capacitance Crss 2.5 pF
Turn-ON Delay Time td(on)
See Fig.1
8 ns
Rise Time tr 13 ns
Turn-OFF Delay Time td(off) 43 ns
Fall Time tf 280 ns
Total Gate Charge Qg
VDS=200V, VGS=10V, ID=0.1A
4.2 nC
Gate to Source Charge Qgs 0.7 nC
Gate to Drain “Miller” Charge Qgd 2 nC
Diode Forward Voltage VSD I
S=0.1A, VGS=0V 0.8 1.5 V
N-Channel Power MOSFET
1500V, 0.1A, 150Ω, TO-220F-3FS
O
derin
numbe
: ENA2236
ORDERING INFORMATION
See detailed orderin
and shi
in
information on
a
e 4 of this data shee
.
TO-220F-3FS
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
C onditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.