© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 4 1Publication Order Number:
2N6344A/D
2N6344A, 2N6348A,
2N6349A
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
Blocking Voltage to 800 V
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Gate Triggering Guaranteed in all Four Quadrants
For 400 Hz Operation, Consult Factory
8.0 A Devices Available as 2N6344 thru 2N6349
Pb−Free Packages are Available*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
TO−220AB
CASE 221A
STYLE 4
123
4
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4Main Terminal 2
MT1
G
MT2
Preferred devices are recommended choices for future use
and best overall value.
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See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
2N634xAG
AYWW
2N634xA = Device Code
x = 4, 8, or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING
DIAGRAM
2N6344A, 2N6348A, 2N6349A
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2
MAXIMUM RATINGS
Characteristics Symbol Value Unit
*Peak Repetitive Off−State Voltage (Note 1)
(Gate Open, TJ = −40 to +110°C, Sine Wave 50 to 60 Hz, Gate Open) 2N6344A, 2N6348A
2N6349A
VDRM,
VRRM 600
800
V
*On−State RMS Current (Full Cycle Sine Wave 50 to 60 Hz) (TC = +80°C)
(TC = +95°C)
IT(RMS) 12
6.0
A
*Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C)
Preceded and followed by rated current ITSM 100 A
Circuit Fusing Consideration (t = 8.3 ms) I2t 59 A2s
*Peak Gate Power (TC = +80°C, Pulse Width = 2.0 ms) PGM 20 W
*Average Gate Power (TC = +80°C, t = 8.3 ms) PG(AV) 0.5 W
*Peak Gate Current (Pulse Width = 2.0 ms; TC = +80°C) IGM 2.0 A
*Peak Gate Voltage (Pulse Width = 2.0 ms; TC = +80°C) VGM "10 V
*Operating Junction Temperature Range TJ40 to +125 °C
*Storage Temperature Range Tstg 40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended O p e r a t i n g Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds TL260 °C
ORDERING INFORMATION
Device Package Shipping
2N6344A TO−220AB
500 Units / Box
2N6344AG TO−220AB
(Pb−Free)
2N6348A TO−220AB
2N6348AG TO−220AB
(Pb−Free)
2N6349A TO−220AB
2N6349AG TO−220AB
(Pb−Free)
2N6344A, 2N6348A, 2N6349A
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3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in either direction)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C
TJ = 110°C
IDRM,
IRRM
10
2.0 mA
mA
ON CHARACTERISTICS
*Peak On-State Voltage
(ITM = "17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) VTM 1.3 1.75 V
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
Quadrant I: MT2(+), G(+) All
Quadrant II: MT2(+), G(−) 2N6348A and 2N6349A only
Quadrant III: MT2(−), G(−) All
Quadrant IV: MT2(−), G(+) 2N6348A and 2N6349A only
*MT2(+), G(+); MT2(−), G(−) TC = −40°C
*MT2(+), G(−); MT2(−), G(+) TC = −40°C
IGT
6.0
6.0
10
25
50
75
50
75
100
125
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
Quadrant I: MT2(+), G(+) All
Quadrant II: MT2(+), G(−) 2N6348A and 2N6349A only
Quadrant III: MT2(−), G(−) All
Quadrant IV: MT2(−), G(+) 2N6348A and 2N6349A only
*MT2(+), G(+); MT2(−), G(−) TC = −40°C
*MT2(+), G(−); MT2(−), G(+) TC = −40°C
VGT
0.9
0.9
1.1
1.4
2.0
2.5
2.0
2.5
2.5
3.0
V
Gate Non−T rigger Voltage (VD = Rated VDRM, RL = 10 k W, TJ = 110°C)
*MT2(+), G(+); MT2(−), G(−); MT2(+), G(−); MT2(−), G(+) VGD 0.2 V
Holding Current
(VD = 12 Vdc, Gate Open) TC = 25°C
Initiating Current = "200 mA *TC = −40°C
IH
6.0
40
75
mA
*Turn-On Time
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1 ms, Pulse Width = 2 ms)
tgt 1.5 2.0 ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = 80°C)
dv/dt(c) 5.0 V/ms
*Indicates JEDEC Registered Data.
2N6344A, 2N6348A, 2N6349A
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4
+ Current
+ Voltage
VTM
IH
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 − VTM
IH
VTM Maximum On State Voltage
IHHolding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(−) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(−) MT2
REF
MT1
(−) IGT
GATE
(−) MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
IGT + IGT
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
2N6348A
2N6349A
2N6348A
2N6349A
All
All
2N6344A, 2N6348A, 2N6349A
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5
70
80
90
100
110
1412108.06.04.02.0
30°
dc
IT(RMS), RMS ON-STATE CURRENT, (AMP)
120°
180°
90°
0
α = CONDUCTION ANGLE
α
α
60°
T , CASE TEMPERATURE ( C)°
C
4.0
00
IT(RMS), RMS ON-STATE CURRENT (AMP)
8.0
16
12
20
2.0 4.0 6.0 8.0 10 12 14
TJ = 110°C
α
α
α = CONDUCTION ANGLE
dc
60
°
α = 30°
180°
120°
90°
P , AVERAGE POWER (WATTS)
AV
Figure 1. RMS Current Derating Figure 2. On−State Power Dissipation
1
2
3
QUADRANTS
QUADRANT 4
−60 20−20 0 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
0.4
−40
0.6
0.8
1.0
1.2
1
1.4
1.6
1.8 50
30
20
10
7.0
5.0 140120100806040200−20−40−60
TJ, JUNCTION TEMPERATURE (°C)
VD = 12 V
2
3
4
V , GATE TRIGGER VOLTAGE (VOLTS)
QUADRANT
gt
I , GATE TRIGGER CURRENT (mA)
GT
Figure 3. Typical Gate Trigger Voltage Figure 4. Typical Gate Trigger Current
VD = 12 V
2N6344A, 2N6348A, 2N6349A
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6
TJ = 100°C
f = 60 Hz
1.0
0
2.0 3.0 5.0 7.0 10
NUMBER OF CYCLES
20
40
60
CYCLE
80
100
TJ = 100°C
0.5
0.7
1.0
0.1
25°C
vTM, MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
−40
0.80.4 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
0.2
0.3
−60 −20 200 40 10080 140
TJ, JUNCTION TEMPERATURE (°C)
12060
MAIN TERMINAL #2
POSITIVE
2.0
20
10
7.0
5.0
3.0
3.0
5.0
7.0
10
2.0
20
30
50
100
70
GATE OPEN
MAIN TERMINAL #1
POSITIVE
i , INSTANTANEOUS ON-STATE CURRENT (AMP)
TM
ITSM I , HOLDING CURRENT (mA)
H
Surge is preceded and followed by rated current
, PEAK SURGE CURRENT (AMP)
Figure 5. On−State Characteristics
Figure 6. Typical Holding Current
Figure 7. Maximum Non−Repetitive
Surge Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 8. Typical Thermal Response
2.0 k 10 k20 5.0 k1.0 k500200100505.02.01.00.50.2
ZqJC(t) = r(t) RqJC
0.02
0.05
0.2
0.1
0.5
1.0
t,TIME (ms)
0.1
0.01
2N6344A, 2N6348A, 2N6349A
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7
PACKAGE DIMENSIONS
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
TO−220AB
CASE 221A−07
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 −−− 1.15 −−−
Z−−− 0.080 −−− 2.04
A
K
L
V
GD
N
Z
H
Q
FB
123
4
−T− SEATING
PLANE
S
R
J
U
TC
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2N6344A/D
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